用有机混合物实现对微腔电致发光光谱的调制

制做了一种新型的有机电致微腔器件，将两种有机材料混合作为发光材料，通过改变NPB和Alq的重量比(从1：28改变到17：1)，达到了调节腔长从而改变器件发光颜色的目的，且器件发光颜色不随所加电压变化；通过合理地调节两种材料的配比，可以实现微腔白光发射。5种配比的微腔器件均发出半宽度很窄的双模发射(8～12nm)；与传统的异质结微腔器件相比，开启电压从7V降到4V，亮度也得到了提高。     

以Liq∶Rubrene为发光层的白色有机电致发光器件的研制

以蓝色发光材料Liq为主体,以一定的比例掺入黄光染料Rubrene,研制了新型白色有机电致发光器件.调节Rubrene的掺杂比为1.1%时得到近白光器件,色坐标为(0.308,0.347),器件的启亮电压为8V,当外加电压达到25V时,器件发光亮度达3120cd/m2.     

以Liq:Rubrene为发光层的白色有机电致发光器件的研制

以蓝色发光材料Liq为主体,以一定的比例掺入黄光染料Rubrene,研制了新型白色有机电致发光器件.调节Rubrene的掺杂比为1.1%时得到近白光器件,色坐标为(0.308,0.347),器件的启亮电压为8V,当外加电压达到25V时,器件发光亮度达3120cd/m2.     

微腔结构顶发射有机白光器件

结合微腔效应,通过调节不同发光层的厚度制作了顶发射有机白光器件.器件结构为Si/Ag/Ag2O/m-MTDATA/NPB/DPVBi/DCJTB:Alq3/Alq3/LiF/Al/Ag,其中DPVBi,DCJTB与Alq3的掺杂层分别作为蓝光和红光发光层,在选定490 nm的谐振波长时,通过调节DPVBi和掺杂层的厚度来实现对器件发光色度的调节.当DPVBi厚度为1 nm,电压为9 V时,器件的色坐标为(0.33,0.34),非常接近白光等能点.此项工作为利用微腔效应制作高效率高亮度顶发射白光器件奠定了基础.     

金属阳极厚度对OLED微腔器件性能的影响

制作了一种以Al为金属反射膜和金属半透膜的微腔有机电致发光器件(OLED)。器件结构是:Al/MoO3/NPB/ADN∶TBPe∶DCJTB/Alq3/LiF/Al。设计了五种厚度的金属Al阳极半透膜器件,Al半透膜的厚度依次为:12nm,13nm,14nm,15nm,16nm。通过调节阳极Al半透膜的厚度,改变微腔的光学长度,研究微腔效应对器件性能的影响。利用Al半透膜阳极厚度的变化,调整微腔器件的光学长度,发光效率和色纯度也随之变化。当Al半透膜为12nm时,器件在11V获得最高亮度3 381cd/m2,最高效率为2.01cd/A,色坐标为(0.33,0.39)。实验表明,合理利用微腔效应,可提高以Al为阳极器件的色纯度,并保持一定的发光效率。     

硅基法布里-珀罗微腔的室温发光

提出了一种新型基于法布里-珀罗(F-P)微腔的发光器件结构.它采用PECVD方法制备的非晶硅/二氧化硅结构作为微腔中的布拉格反射腔,非晶碳化硅薄膜作为中间光发射层,通过对一维方向光子的限制,使发光层荧光强度增强,谱线变窄.通过调节发光层和反射腔膜厚及折射率,可以精确控制发光峰位.实验结果证明该结构可望实现全硅基材料的强室温可见光发射.     

硅基法布里—珀罗微腔的室温发光

提出了一种新型基于法布里 -珀罗 (F- P)微腔的发光器件结构 .它采用 PECVD方法制备的非晶硅 /二氧化硅结构作为微腔中的布拉格反射腔 ,非晶碳化硅薄膜作为中间光发射层 ,通过对一维方向光子的限制 ,使发光层荧光强度增强 ,谱线变窄 .通过调节发光层和反射腔膜厚及折射率 ,可以精确控制发光峰位 .实验结果证明该结构可望实现全硅基材料的强室温可见光发射 .     

硅基法布里-珀罗微腔的室温发光

提出了一种新型基于法布里 -珀罗 (F- P)微腔的发光器件结构 .它采用 PECVD方法制备的非晶硅 /二氧化硅结构作为微腔中的布拉格反射腔 ,非晶碳化硅薄膜作为中间光发射层 ,通过对一维方向光子的限制 ,使发光层荧光强度增强 ,谱线变窄 .通过调节发光层和反射腔膜厚及折射率 ,可以精确控制发光峰位 .实验结果证明该结构可望实现全硅基材料的强室温可见光发射 .     

具有微腔结构的有机顶发射电致发光器件的光谱分析

摘要: 制做了具有微腔结构的蓝色和白色有机顶发射电致发光器件。利用TBADN:3%DSAPh和Alq3:DCJTB/TBADN:TBPe/Alq3:C545材料为发光层,在玻璃基片上,依次制备薄膜：Ag为阳极反射层, CuPc作为空穴注入层,NPB作为空穴传输层,ITO为光程调节层; Al/Ag作为半透明阴极,电极的透射率在30%左右。通过改变ITO层的厚度,TBADN:3%DSAPh器件获得了深蓝色发光光谱,色坐标为(0.141, 0.049),半高宽为17nm发光光谱,实现了窄带发射,Alq3:DCJTB/TBADN:TBPe/Alq3:C545器件得到了不同颜色（红、蓝、绿）的发光光谱,实现了对光谱的调节作用。文章对微腔顶发射器件的发射强度和发光光谱半高宽的结果进行了分析。     

一种新型插层结构的有机电致发光器件

报道了一种新型插层结构的有机电致发光器件(OLED),LiF(1 nm)/Al(5 nm)插层作为半反射镜,与LiF(1 nm)/Al(100 nm)作为全反射镜面的阴极构成平面Fabry-Perot(F-P)型微腔,所用发光层材料为Zn(salen),器件的结构为:ITO/CuPc/NPD/Zn(salen)/Liq/LiF/Al/CuPc/NPD/ Zn(salen)/Liq/LiF/Al,其最大发光亮度和电流效率分别达674 cd/m2 和 2.61 cd/A,半峰宽(FWHM)为48 nm.与传统结构器件相比,色纯度、发光亮度和发光效率等性能指标均得到了优化.     

金属镜微腔发光方向性研究

在抛光的K9玻璃衬底上,制作了结构为玻璃/Ag(30 nm)/Alq(120 nm)/Ag(30 nm)的全金属镜微腔结构。研究了在不同探测角度下器件谐振模式的角色散效应及其光谱半高宽(FWHM)的变化特性。微腔器件的谐振模式随偏离角度的增加而蓝移,当角度从0°到60°时,发光峰值相应地从585.8 nm蓝移到546.6 nm,光谱FWHM从26.8 nm增大到36.6 nm。分析并解释了光谱展宽以及谐振模式角色散效应的原因,提出了抑制微腔器件角色散的方法。     

Optoelectronic Characteristics of Direct-Current and Alternating-Current White Thin-Film Light-Emitting Diodes Based on Hydrogenated Amorphous Silicon Nitride Film

Direct-current and alternating-current white thin- film light-emitting diodes (DCW and ACW TFLEDs) have been fabricated and demonstrated with the intrinsic hydrogenated amorphous silicon nitride (i-a-SiN:H) film as the luminescent layer. The achievable brightness of the representative DCW and ACW TFLEDs were 200 and 170 cd/m² at an injection-current density of 600 and 100 mA/cm², respectively. The electroluminescence (EL) threshold voltage of the DCW TFLED was 10.9 V, and its peak wavelength and full-width at half-maximum (FWHM) of the EL spectrum were about 455 and 230 nm, respectively. For the ACW TFLED, the EL threshold voltage was 8.4 V, and its peak wavelength and FWHM of the EL spectrum were about 535 and 260 nm, respectively. In addition, their current-conduction mechanism was also investigated. Within the lower applied-voltage region, they showed an ohmic current, while for the higher applied-voltage region, the Frenkel-Poole emission was the main mechanism. It was also found that the H₂ -plasma treatment of luminescent i-a-SiN:H layer of an ACW TFLED played an important role in improving device performances, such as decreased EL threshold voltage, increased brightness, and broadened and blue-shifted EL spectrum. The EL spectra of an ACW TFLED under either DC forward or reverse bias or the sinusoidal AC voltage were qualitatively very similar, with a peak wavelength at about 535 nm and a broad FWHM about 260 nm. Moreover, the EL intensity of an ACW TFLED increased with an AC frequency of up to 180 kHz and, then, decreased rapidly and became very weak as the frequency was up to about 500 kHz.     

Preparation of CdSe nanocrystals in organic system and electroluminescence characteristics of the devices

Semiconductor nanocrystals have attracted wideinter-estsinthe last fewyears because they have high lumi-nescence efficiency and size-tunable band gap character-istics .The semiconductor nanocrystals could be func-tionalized using various surfactants to ma…     

AlGaN基p-i-n型日盲紫外探测器材料的研制

采用金属有机气相外延(MOCVD)方法在(0001)面蓝宝石衬底上生长了AlN和高铝组分AlGaN材料。通过优化AlN和AlGaN材料的生长温度、生长压力和Ⅴ族元素/Ⅲ族元素物质的量比(nⅤ/Ⅲ)等工艺条件,得到了高质量的AlN和高铝组分AlGaN材料。AlN材料X射线双晶衍射ω(002)半宽为74 arcsec,透射光谱测试带边峰位于205 nm,带边陡峭;Al组分为45%的AlGaN材料X射线双晶衍射ω(002)半宽为223 arcsec,透射光谱测试带边峰位于272 nm,带边陡峭。采用此外延工艺方法生长了AlGaN基p-i-n型日盲紫外探测器材料并进行了器件工艺流片,研制出AlGaN基p-i-n型日盲紫外探测器,响应峰值波长为262 nm,在零偏压下的峰值响应度达到0.117 A/W。     

Long resonator micromachined tunable GaAs-AlAs Fabry-Perot filter

We present novel concepts for tunable optical filters. Long resonant cavities of about 30-/spl mu/m length have been realized with two-chip designs. GaAs technology has been applied to filters that are designed for the use in dense wavelength-division multiplexing (WDM) at wavelengths around 1550 nm. A finesse of 46.7, a full-width at half-maximum (FWHM) of 1.2 nm and electrostatic tuning over a range of 103 nm with an applied voltage of 35 V has been achieved. An alternative tuning concept that allows to tune the resonator length 4 /spl mu/m by heating Ni-Cr resistors placed on the suspending beams of a membrane with an applied voltage of 2.7 V has been realized.     

Spectrum study of top-emitting organic light-emitting devices with micro-cavity structure

Blue and white top-emitting organic light-emitting devices OLEDs with cavity effect have been fabricated.TBADN:3%DSAPh and Alq3:DCJTB/TBADN:TBPe/Alq3:C545 were used as emitting materials of microcavity OLEDs.On a patterned glass substrate,silver was deposited as reflective anode,and copper phthalocyanine (CuPc)layer as HIL and 4'-bis[N-(1-Naphthyl)-N-phenyl-amino]biphenyl(NPB)layer as HTL were made.Al/Ag thin films were made as semi-transparent cathode with a transmittance of about 30%.By changing the thickness of indium tin oxide ITO,deep blue with Commission Internationale de L'Eclairage chromaticity coordinates(CIEx,y)of(0.141,0.049)was obtained on TBADN:3%DSAPh devices,and different color(red,blue and green)was obrained on Alq3:DCJTB/TBADN:TBPe/Alq3:C545 devices,full width at half maxima(FWHM)was only 17 nm.The spectral intensity and FWHM of emission in cavity devices have also been studied.     

Lasing Behavior of BMPPV:PVK Mixture in Microcavity

The surface emitting microcavity is formed by sandwiching a polymer film containing poly (para-phenylene vinylene) (BMPPV) and poly (N-vinylcarbazole)(PVK) between a DBR with a reflectivity of 99.5% and a silver film.The sample is optically pumped by a 337.1 nm line of nitrogen laser with 10 ns pulses at 20 Hz repetition rate.The lasing phenomenon is observed in BMPPV and PVK mixture microcavity .The full width at half maximum( FWHM) is 6 nm at the peak wavelength of 460 nm.The lasing threshold energy is estimated to be about 5μJ.     

基于HfO2栅介质的Ga2O3 MOSFET器件研制

采用金属有机化学气相沉积(MOCVD)方法在(010) Fe掺杂半绝缘Ga2O3同质衬底上外延得到n型β-Ga2O3薄膜材料,材料结构包括400 nm的非故意掺杂Ga2O3缓冲层和40 nm的Si掺杂Ga2O3沟道层.基于掺杂浓度为2.0×1018 cm-3的n型β-Ga2O3薄膜材料,采用原子层沉积的25 nm的HfO2作为栅下绝缘介质层,研制出Ga2O3金属氧化物半导体场效应晶体管(MOSFET).器件展示出良好的电学特性,在栅偏压为8V时,漏源饱和电流密度达到42 mA/mm,器件的峰值跨导约为3.8 mS/mm,漏源电流开关比达到108.此外,器件的三端关态击穿电压为113 V.采用场板结构并结合n型Ga2O3沟道层结构优化设计能进一步提升器件饱和电流和击穿电压等电学特性.     

高饱和度蓝色磷光有机发光器件

使用典型天蓝色磷光材料FIrpic作为磷光金属微腔有机发光器件（OLED）的发光层,以高反射的Al膜作为阴极顶电极和半透明的Al膜作为阳极底电极,采用空穴和电子注入层MoO3和LiF,制备了结构glass／Al（15nm）／MoO3（znm）／NPD（40nm）／mCP：Flrpic（30Ftm,7％）／BCP（20n...