互注入激光器研究进展

基于互注入系统的激光器,在研究激光混沌通信,高功率激光输出方面起着重要作用,在激光加工,保密通信以及军事领域有着极其重要的价值。目前国内外的研究机构对基于互注入半导体激光器、固体激光器、光纤激光器等都开展了诸多研究。本文对国内外互注入激光器的研究进展进行了总结,分别介绍了上述三种激光器的最新研究成果,并对其前景进行了展望。     

太阳光直接抽运的激光器研究历史与发展趋势

太阳光直接抽运的激光器以太阳光为抽运源,直接将太阳光转化为激光.介绍了国内外太阳光直接抽运激光器的研究状况.从太阳光到激光的转换效率论述了太阳光直接抽运激光器的应用优势;回顾了太阳光直接抽运的各类激光器的研究历史,按太阳光汇聚方式对太阳光直接抽运的固体激光器进行了归类分析,对太阳光直接抽运的激光器发展进行了预测.     

高功率固体激光器技术研究与应用

论述了高功率固体激光技术发展历程中遇到的各种技术问题及解决方案,对目前高功率固体激光技术的研究热点——光纤激光器、热容激光器、板条激光器、薄片激光器等的技术特点、发展现状及应用前景进行了讨论。     

全固态黄光激光器研究进展

黄光波段的激光在生物医学、空间目标探测和识别、激光显示、化学等领域有着广泛的应用前景,近年来人们对全固态黄光激光器进行了大量的研究.简述了全固态黄光激光器的发展历史和研究现状.对黄光激光的产生方式进行了讨论,重点介绍两种获得黄光激光的非线性光学方法:和频和受激拉曼散射效应.在和频方式的讨论中,对比分析了腔内和腔外两种和频方式.分析了三种不同技术途径的全固态拉曼黄光激光器.介绍了通过直接倍频红外激光获得黄光激光的研究情况.最后指出了全固态黄光激光器的发展方向.     

光纤激光仿真软件See Fiber Laser与光纤激光工具集SFTool

为了实现一款全国产、界面友好、使用简单、能够指导科研和产业设计的光纤激光仿真软件,进行了光纤激光仿真软件的开发研究。在光纤激光理论研究的基础上,初步开发了能够对高功率掺镱光纤激光器进行仿真的软件See Fiber Laser和能够对光纤激光器相关参数进行计算的光纤激光工具集SFTool。介绍了两款软件的部分理论模型、基本功能和简单算例,该研究有望降低光纤激光器的研究和设计难度。     

日本的超高功率激光系统及其应用

近30年来，人们一直研制超高功率激光系统，用以进行激光核聚变研究，大阪大学发展了“激光Ⅶ”玻璃激光器，“烈光Ⅷ”CO2激光器，二极管抽运固体激光器与拍瓦线性调频脉冲放大钕玻璃激光器，实验证明，它们对激光研究很有效，在科学技术的许多领域也有多种应用。     

基于激光晶体的固态波导激光器

光波导是集成光学中的基本元件之一,构建于光波导结构上的波导激光器是一种微型激光源,近年来受到较多研究人员的关注,并有望在未来光子学系统中发挥重要的作用。激光晶体是固态激光器的主要增益介质之一。本文综述了基于激光晶体的固态波导激光器的最新研究进展,包括连续波波导激光器和脉冲波导激光器(调Q或锁模),其工作波长涵盖了从可见光到中红外的各个波段;还对波导激光研究的未来发展方向进行了展望。     

用于近距目标探测的激光引信技术

分析了激光引信技术发展状况及工作原理。针对目前在研的激光引信关键技术,即微激光器技术和激光成像技术,比较了微激光器与半导体激光器的性能,并对微激光器技术抗气悬体干扰与目标识别的信号处理方法进行分析;提出激光成像技术探测机理及图像处理过程中应注意的问题和解决方法。最后对激光引信技术现存问题及今后发展方向提出了自己的看法,为进一步研究提供参考。     

LD泵浦Yb∶YAG固体激光器研究进展

Yb3+离子掺杂YAG晶体(Yb∶YAG)作为一种性能优良的激光晶体已广泛应用于高效、 高功率激光领域,在光纤温度传感器、激光切割钻孔以及军用领域都具有重要的应用价值。本文分析了Yb∶YAG作为激光增益介质的优势,对近年来国内外激光二极管泵浦Yb∶YAG激光器的研究进展进行了总结,分别介绍了Yb∶YAG透明陶瓷激光器、掺镱光纤激光器,可调谐Yb∶YAG激光器、Yb∶YAG薄片激光器以及双波长Yb∶YAG激光器的最新研究情况,并对其发展前景进行了展望。     

同轴型激光器焊后偏移的理论与实验研究

为了研究同轴型激光器激光焊接产生的焊后偏移(PWS),采用基于有限元热-结构耦合理论的分析方法,建立了同轴型激光器3束激光焊接模型,分析了激光焊接工艺参量对焊后偏移的影响规律,并进行了激光锤校正实验研究,获得了同轴型激光器激光焊接前后及校正后的耦合光功率值。结果表明,同轴型激光器的焊后偏移受到3个焊点功率分布和位置分布等因素的影响;耦合光功率在激光锤校正后整体呈上升趋势,最大耦合光功率可恢复至94%,有限元仿真分析对PWS的方向预测合理。这一结果对激光焊接同轴型激光器的生产具有一定的指导意义。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.