共查询到20条相似文献，搜索用时 15 毫秒
1.
Raphael Pfattner Amir M. Foudeh Shucheng Chen Weijun Niu James R. Matthews Mingqian He Zhenan Bao 《Advanced Electronic Materials》2019,5(1)
Dual‐gate field‐effect transistors (FETs) based on organic semiconductor polymer and SiOx as the topmost active sensing layer permit monitoring of pH in physiologically relevant conditions in a fast and reversible fashion. Beyond that, due to the bottom gate‐induced field effect, such sensors exhibit tunable sensitivity and provide faster continuous measurements compared to conventional bulky glass bulb pH sensors. pH response of bare SiOx is evaluated independently by means of voltmeter measurements. When assembled in dual‐gate architecture, the pH response of FET devices scales in agreement with the theoretical model, which assumes capacitive coupling, exhibiting an amplification of up to 10. This opens up the possibility for reversible and reliable sensing based on organic semiconductors well beyond pH sensors. 相似文献
2.
硫氰酸根离子敏半导体传感器的研制 总被引：2，自引：1，他引：2
本文报导的不是ＰＶＣ膜硫氰酸根离子半导体传感器。该传感器具有全固态化,易微型化、集成化和功能化等特点。并具有良好的能斯特响应。 相似文献
3.
Enze Zhang Yibo Jin Xiang Yuan Weiyi Wang Cheng Zhang Lei Tang Shanshan Liu Peng Zhou Weida Hu Faxian Xiu 《Advanced functional materials》2015,25(26):4076-4082
Atomically thin 2D layered transition metal dichalcogenides (TMDs) have been extensively studied in recent years because of their appealing electrical and optical properties. Here, the fabrication of ReS2 field‐effect transistors is reported via the encapsulation of ReS2 nanosheets in a high‐κ Al2O3 dielectric environment. Low‐temperature transport measurements allow to observe a direct metal‐to‐insulator transition originating from strong electron–electron interactions. Remarkably, the photodetectors based on ReS2 exhibit gate‐tunable photoresponsivity up to 16.14 A W?1 and external quantum efficiency reaching 3168%, showing a competitive device performance to those reported in graphene, MoSe2, GaS, and GaSe‐based photodetectors. This study unambiguously distinguishes ReS2 as a new candidate for future applications in electronics and optoelectronics. 相似文献
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Wen-Yaw Chung Yeong-Tsair Lin Chung-Huang Yang Alfred Krzyskow 《Microelectronics Journal》2006,37(10):1105-1114
An integrated and new interface circuit with temperature compensation has been developed to enhance the ISFET readout circuit stability. The bridge-type floating source circuit suitable for sensor array processing has been proposed to maintain reliable constant drain-source voltage and constant drain current (CVCC) conditions for measuring the threshold voltage variation of ISFET due to the corresponding hydrogen ion concentration in the buffer solution. The proposed circuitry applied to Si3N4 and Al2O3-gate ISFETs demonstrate a variation of the drain current less than 0.1 μA and drain-source voltage less than 1 mV for the buffer solutions with the pH value changed from 2 to 12. In addition, the scaling circuitry with the VT temperature correction unit (extractor) and LABVIEW software are used to compensate the ISFET thermal characteristics. Experimental results show that the temperature dependence of the Si3N4-gate ISFET sensor improved from 8 mV/°C to less than 0.8 mV/°C. 相似文献
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在介绍离子敏场效应晶体管(ISFET)传感器的应用和基本工作原理的基础上,阐述了集成化ISFET传感器的研究现状,包括ISFET敏感膜及其制造工艺与CMOS兼容性研究、集成化读出电路、多传感器集成等方面。展望了ISFET传感器的研究趋势,认为在以下方面值得探索和研究:敏感膜是把化学变量转换为电学变量的关键;高性能读出电路的研究;集ISFET、读出电路及后端信号处理电路于一体的低功耗ISFET传感器的系统集成;多功能、智能化的多传感器集成;研究集微传感器、微执行器、信号处理和控制电路、接口电路、通信系统以及电源等于一体的微机电系统(MEMS);ISFET微传感系统的数字化集成等。 相似文献
7.
Joshua N. Arthur Mujeeb Ullah Chaudhry Maria A. Woodruff Ajay K. Pandey Soniya D. Yambem 《Advanced Electronic Materials》2020,6(5)
Hygroscopic insulator field‐effect transistors (HIFETs) are a class of low‐voltage‐operation organic transistors that have been successfully demonstrated for biosensing applications through modification of the gate electrode. However, modification of the gate electrode often leads to nonideal transistor characteristics due to changes in its intrinsic electrical properties. This work investigates the effect of gate conductance in HIFETs using poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) as a model gate electrode. It is revealed that a reduction in gate conductance results in a reduction in the effective gate voltage and plays an important role in defining HIFET characteristics. Key figures of merit, including ON/OFF ratio, threshold voltage, transconductance, and saturation mobility increase with increasing gate conductance and reach a plateau once sufficient gate conductance is attained. This effect is attributed to a decrease in the effective gate voltage along the gate electrode arising from its resistivity when a gate leakage current is present. These results are widely applicable and serve as design rules for HIFET device optimization. 相似文献
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硫酸根离子敏感半导体器件的研究 总被引：1，自引：0，他引：1
本文报导一种基于四苯硼钠的离子敏感半导体器件。该器件的线性响应范围为 1 0×10 - 1- 1 0× 10 - 3mol/L ,斜率为 32ml/pc (13℃ ) ,检测下限为 6 0× 10 - 4mol/L。适宜的PH范围为 4 - 4 6。 相似文献
9.
《Advanced Electronic Materials》2017,3(4)
Development of highly sensitive pressure sensors that function well even in bending environments and operate at ultralow voltage is desirable for wearable applications. Here, a highly sensitive and bendable capacitive pressure sensor with the ability to distinguish pressure and bending stimuli and a pressure‐sensitive transistor (PST) that can be easily integrated into wearable sensor system due to ultralow voltage (as low as 1 V for stable signal detection) operation is demonstrated. By introducing surface treatment and bonding technique, all components of the pressure sensor are tightly bonded to each other, enabling high bending stability. The sensor shows high pressure sensitivity (9.9 kPa−1) and can detect pressure even in the bending state. Additional bending sensors enables to separately detect signals from the actual pressure and bending deformation. In order to implement low‐power sensor circuitry, the PST is fabricated by integrating the pressure sensor and inkjet‐printing single‐walled carbon nanotube thin film transistor. Such low‐voltage operation of the PST enables to demonstrate the stand‐alone wearable user‐interactive pulse monitoring system by using commercially available electronic devices. The strategy for bendable low‐power sensor may enable realization of wearable sensing system and electronic skins with low power consumption in near future. 相似文献
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Noah J. Tremblay Byung Jun Jung Patrick Breysse Howard E. Katz 《Advanced functional materials》2011,21(22):4314-4319
Chemiresistors and sensitive organic field‐effect transistors (OFETs) have been substantially developed as cheap, scalable, and versatile sensing platforms. While new materials are expanding OFET sensing capabilities, the device architectures have changed little. Higher order logic circuits utilizing OFETs sensitive to amine vapors are presented. The circuits depend on the synergistic responses of paired p‐ and n‐channel organic semiconductors, including a rare analyte‐induced current increase by the n‐channel semiconductor. This is the first step towards ‘intelligent sensors’ that utilize analog signal changes in sensitive OFETs to produce direct digital readouts suitable for further logic operations. 相似文献
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Jingjing Lu Dapeng Liu Jiachen Zhou Yingli Chu Yantao Chen Xiaohan Wu Jia Huang 《Advanced functional materials》2017,27(20)
The thin‐film structures of chemical sensors based on conventional organic field‐effect transistors (OFETs) can limit the sensitivity of the devices toward chemical vapors, because charge carriers in OFETs are usually concentrated within a few molecular layers at the bottom of the organic semiconductor (OSC) film near the dielectric/semiconductor interface. Chemical vapor molecules have to diffuse through the OSC films before they can interact with charge carriers in the OFET conduction channel. It has been demonstrated that OFET ammonia sensors with porous OSC films can be fabricated by a simple vacuum freeze‐drying template method. The resulted devices can have ammonia sensitivity not only much higher than the pristine OFETs with thin‐film structure but also better than any previously reported OFET sensors, to the best of our knowledge. The porous OFETs show a relative sensitivity as high as 340% ppm?1 upon exposure to 10 parts per billion (ppb) NH3. In addition, the devices also exhibit decent selectivity and stability. This general and simple strategy can be applied to a wide range of OFET chemical sensors to improve the device sensitivity. 相似文献
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2D single crystals of down to two‐monolayer thickness are fabricated from a push–pull structure‐based green light absorbing organic n‐type semiconductor, (2E,2′E)‐3,3′‐(2,5‐difluoro‐1,4‐phenylene)bis(2‐(5‐(4‐(trifluoromethyl)phenyl)thiophen‐2‐yl)acrylonitrile) (2F‐4‐TFPTA). The 2F‐4‐TFPTA 2D single crystal exhibits field‐effect electron mobility of 0.9 cm2 V−1 s−1 in the dark and also decent photoresponsivity of 3.6 × 103 A W−1 under green light‐emitting diode irradiation, which is noted as the first demonstration of green‐sensitive 2D organic phototransistors. Photoresponse time of this 2F‐4‐TFPTA 2D single‐crystal device is as fast as 43 ms for the rise and 85 ms for the decay. 相似文献
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Yang Lan Chao Hu Hui Deng Lulu Sun Shengjie Yuan Jing Wang Xiangxiang Yu Xiaokun Yang Yinhua Zhou Haisheng Song Xintang Huang 《Advanced Electronic Materials》2019,5(8)
2D transition‐metal dichalcogenides (TMDs) are considered to have high potential for application in consumer electronics. For such applications, they require low threshold, fast operation, and simple fabrication processes. Previously reported 2D TMD metal–insulator–semiconductor field‐effect transistors (MISFETs) usually suffer from high operating voltages and interfacial trap‐induced scattering as their dielectric layer reduces the applied gate voltage and introduces interfacial defects. In order to avoid such problems, 2D MoS2‐based Schottky‐gated metal–semiconductor field‐effect transistors (MESFETs) are developed. Such devices rely on the newly developed MoOx/Au gate electrode. They obtain superior transport mobility, up to 160 cm2 V−1 s−1, compared to an equivalent channel back‐gated MISFET, which only reaches 6.9 cm2 V−1 s−1. Furthermore, the back electric field is utilized to tune the on–off current, SS, and threshold voltage of the MESFET to adapt to different operation requirements. In an integrated prototype device, a MESFET‐based inverter exhibits a faster switching behavior than a mirrored inverter driven by a MISFET. This work provides a reliable strategy for high‐performance MESFET devices, which may expand the 2D material device applications into future consumer electronics. 相似文献
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Markus Dankerl Moritz V. Hauf Andreas Lippert Lucas H. Hess Stefan Birner Ian D. Sharp Ather Mahmood Pierre Mallet Jean‐Yves Veuillen Martin Stutzmann Jose A. Garrido 《Advanced functional materials》2010,20(18):3117-3124
Graphene, with its unique combination of physical and electronic properties, holds great promise for biosensor and bioelectronic applications. In this respect, the development of graphene solution‐gated field‐effect transistor (SGFET) arrays capable of operation in aqueous environments will establish the real potential of graphene in this rapidly emerging field. Here, we report on a facile route for the scalable fabrication of such graphene transistor arrays and provide a comprehensive characterization of their operation in aqueous electrolytes. An on‐chip structure for Hall‐effect measurements allows the direct determination of charge carrier concentrations and mobilities under electrolyte gate control. The effect of the solution‐gate potential on the electronic properties of graphene is explained using a model that considers the microscopic structure of water at the graphene/electrolyte interface. The graphene SGFETs exhibit a high transconductance and correspondingly high sensitivity, together with an effective gate noise as low as tens of μV. Our study demonstrates that graphene SGFETs, with their facile technology, high transconductance, and low noise promise to far outperform state‐of‐the‐art Si‐based devices for biosensor and bioelectronic applications. 相似文献
15.
From its inception, extensive work on the characterization of field effect transistors (FETs) based on 2D‐layered semiconductors has relied on a back‐gated transistor architecture. This is useful for initial assessment but lacks ultimate compatibility with integrated circuit (IC) design since the threshold voltage of individual devices cannot be controlled independently in order to achieve specific ON‐state and OFF‐state performance. Note that threshold engineering via gate electrostatics is inevitable for 2D semiconductors owing to the absence of comprehensive, reliable, and universal doping schemes. In recent years, several strategies are adopted for the gating of individual 2D‐FETs such as atomic layer deposition (ALD) of high‐k dielectrics, drop casting of ionic liquids, and deterministic transfer of insulating 2D hexagonal boron nitride. These techniques have their respective strengths and weaknesses. A facile, low‐temperature, scalable, and universally applicable fabrication scheme for dual‐gated monolayer 2D‐FETs is reported here, which is compatible with the back‐end‐of‐the‐line (BEOL) process flow of complementary metal oxide semiconductor (CMOS) technology, using hydrogen silsesquioxane (HSQ). HSQ is a negative tone resist that possesses dielectric properties similar to SiO2 when exposed to high electron beam irradiation and thermal curing and can produce features as small as 10 nm. 相似文献
16.
研究异质栅单Halo沟道SOI MOS器件的隐埋层中二维效应对器件特性,如电势分布、阈值电压等的影响,仿真结果表明,隐埋层中的二维效应会引起更明显的SCE及DIBL效应.在考虑隐埋层二维效应的基础上,提出了一个新的二维阈值电压模型,能较好地吻合二维器件数值模拟软件Medici的仿真结果. 相似文献
17.
Artem G. Shulga Laura Piveteau Satria Z. Bisri Maria A. Loi 《Advanced Electronic Materials》2016,2(4)
In this work colloidal quantum dots double gate transistors are introduced. A high‐k (k = 43) relaxor ferroelectric polymer is used as a dielectric material for the top gate in a device where the other gate is fabricated from SiO2. The device in double gate configuration is characterized by reduced hysteresis in the transfer curves measured by separately sweeping the voltage of the SiO2 and of the polymer gate. Gating with the relaxor polymer leads to mobility values of μe = 1.1 cm2 V−1s−1 and μh = 6 × 10−3 cm2 V−1s−1 that exceed those extracted from the SiO2 gating: μe = 0.5 cm2 V−1s−1 and μh = 2 × 10−3 cm2 V−1s−1. Measurements under double gating conditions prove that the device works in a single channel mode that is delocalized over the whole film thickness. Double gating allows for shifting the threshold voltage into a desired position and also allows increasing the on‐current of the devices. 相似文献
18.
Thin‐Film Transistors: Synthesis of Ultrathin,Homogeneous Copolymer Dielectrics to Control the Threshold Voltage of Organic Thin‐Film Transistors (Adv. Funct. Mater. 36/2016) 
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下载免费PDF全文 Kwanyong Pak Hyejeong Seong Junhwan Choi Wan Sik Hwang Sung Gap Im 《Advanced functional materials》2016,26(36):6672-6672
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《Advanced Electronic Materials》2017,3(8)
A novel organic transistor‐based sensor for direct X‐ray detection is proposed. The device operates at low voltages (≤3 V) and is entirely fabricated on flexible, plastic substrates with techniques that can be easily upscaled to an industrial scale. It is claimed that flexible, low voltage organic transistors have never been employed as direct ionizing radiation detectors, as two terminal photodetectors are typically considered for this application. It is demonstrated that, differently from two‐terminal photodetectors, X‐ray detection ability of the proposed sensor can be tuned acting on the transistor polarization conditions. Thanks to such a peculiar feature of the device, outstanding values of sensitivity are observed (up to 1200 nC Gy−1), much larger than the ones reported for two terminal direct organic photodetectors. It is notable that, the reported performances have been obtained using as sensing layer a standard, commercially available organic semiconductor: a complete explanation of the mechanism behind the detection ability is thoroughly discussed. The device functionality is perfectly maintained even after the exposure to high X‐ray doses (160 Gy), thus demonstrating the significant radiation hardness of the detector. 相似文献