Charge Transport and Photocurrent Generation in Poly(3‐hexylthiophene): Methanofullerene Bulk‐Heterojunction Solar Cells

The effect of controlled thermal annealing on charge transport and photogeneration in bulk‐heterojunction solar cells made from blend films of regioregular poly(3‐hexylthiophene) (P3HT) and methanofullerene (PCBM) has been studied. With respect to the charge transport, it is demonstrated that the electron mobility dominates the transport of the cell, varying from 10^–8 m² V^–1 s^–1 in as‐cast devices to ≈3 × 10^–7 m² V^–1 s^–1 after thermal annealing. The hole mobility in the P3HT phase of the blend is dramatically affected by thermal annealing. It increases by more than three orders of magnitude, to reach a value of up to ≈ 2 × 10^–8 m² V^–1 s^–1 after the annealing process, as a result of an improved crystallinity of the film. Moreover, upon annealing the absorption spectrum of P3HT:PCBM blends undergo a strong red‐shift, improving the spectral overlap with solar emission, which results in an increase of more than 60 % in the rate of charge‐carrier generation. Subsequently, the experimental electron and hole mobilities are used to study the photocurrent generation in P3HT:PCBM devices as a function of annealing temperature. The results indicate that the most important factor leading to a strong enhancement of the efficiency, compared with non‐annealed devices, is the increase of the hole mobility in the P3HT phase of the blend. Furthermore, numerical simulations indicate that under short‐circuit conditions the dissociation efficiency of bound electron–hole pairs at the donor/acceptor interface is close to 90 %, which explains the large quantum efficiencies measured in P3HT:PCBM blends.     

Effect of Alkyl Side‐Chain Length on Photovoltaic Properties of Poly(3‐alkylthiophene)/PCBM Bulk Heterojunctions

The morphological, bipolar charge‐carrier transport, and photovoltaic characteristics of poly(3‐alkylthiophene) (P3AT):[6,6]‐phenyl‐C61‐butyric acid methyl ester (PCBM) blends are studied as a function of alkyl side‐chain length m, where m equals the number of alkyl carbon atoms. The P3ATs studied are poly(3‐butylthiophene) (P3BT, m = 4), poly(3‐pentylthiophene) (P3PT, m = 5), and poly(3‐hexylthiophene) (P3HT, m = 6). Solar cells with these blends deliver similar order of photo‐current yield (exceeding 10 mA cm^?2) irrespective of side‐chain length. Power conversion efficiencies of 3.2, 4.3, and 4.6% are within reach using solar cells with active layers of P3BT:PCBM (1:0.8), P3PT:PCBM (1:1), and P3HT:PCBM (1:1), respectively. A difference in fill factor values is found to be the main source of efficiency difference. Morphological studies reveal an increase in the degree of phase separation with increasing alkyl chain length. Moreover, while P3PT:PCBM and P3HT:PCBM films have similar hole mobility, measured by hole‐only diodes, the hole mobility in P3BT:PCBM lowers by nearly a factor of four. Bipolar measurements made by field‐effect transistor showed a decrease in the hole mobility and an increase in the electron mobility with increasing alkyl chain length. Balanced charge transport is only achieved in the P3HT:PCBM blend. This, together with better processing properties, explains the superior properties of P3HT as a solar cell material. P3PT is proved to be a potentially competitive material. The optoelectronic and charge transport properties observed in the different P3AT:PCBM bulk heterojunction (BHJ) blends provide useful information for understanding the physics of BHJ films and the working principles of the corresponding solar cells.     

The Effect of Poly(3‐hexylthiophene) Molecular Weight on Charge Transport and the Performance of Polymer:Fullerene Solar Cells

The time‐of‐flight method has been used to study the effect of P3HT molecular weight (M_n = 13–121 kDa) on charge mobility in pristine and PCBM blend films using highly regioregular P3HT. Hole mobility was observed to remain constant at 10^?4 cm²V^?1s^?1 as molecular weight was increased from 13–18 kDa, but then decreased by one order of magnitude as molecular weight was further increased from 34–121 kDa. The decrease in charge mobility observed in blend films is accompanied by a change in surface morphology, and leads to a decrease in the performance of photovoltaic devices made from these blend films.     

Optical,electrical and mechanical properties of indium tin oxide on polyethylene terephthalate substrates: Application in bulk-heterojunction polymer solar cells

We investigated optical, electrical and mechanical properties of indium tin oxide (ITO) on flexible polyethylene terephthalate (PET) substrate, considering bulk-heterojunction (BHJ) polymer solar cells applications. Encapsulation of flexible solar cells with the architecture PET/ITO/PEDOT:PSS/P3HT:PCBM (or P3HT:PCBM:AZ-NDI-4)/Al was done by direct brush-painting with nail enamel. Active cell layer blends of [6,6]-phenyl C₆₁ butyric acid methyl ester (PCBM) with regioregular or regiorandom poly(3-hexylthiophene-2,5-diyl) (P3HT) were applied. Additionally for this role the mixture of regioregular P3HT:PCBM with naphthalene diimide–imine with four thiophene rings AZ-NDI-4 was tested. Obtained photovoltaic (PV) and optical (UV–vis) results of the flexible polymer solar cells were compared with the same architecture of devices on the glass/ITO substrate.     

Self Encapsulated Poly(3‐hexylthiophene)‐poly(fluorinated alkyl methacrylate) Rod‐Coil Block Copolymers with High Field Effect Mobilities on Bare SiO2

Conjugated rod‐coil block copolymers provide an interesting route towards enhancing the properties of the conjugated block due to self‐assembly and the interplay of rod‐rod and rod‐coil interactions. Here, we demonstrate the ability of an attached semi‐fluorinated block to significantly improve upon the charge carrier properties of regioregular poly(3‐hexyl thiophene) (rr‐P3HT) materials on bare SiO₂. The thin film hole mobilities on bare SiO₂ dielectric surfaces of poly (3‐hexyl thiophene)‐block‐polyfluoromethacrylates (P3HT‐b‐PFMAs) can approach up to 0.12 cm² V^?1 s^?1 with only 33 wt% of the P3HT block incorporated in the copolymer, as compared to rr‐P3HT alone which typically has mobilities averaging 0.03 cm² V^?1 s^?1. To our knowledge, this is the highest mobility reported in literature for block copolymers containing a P3HT. More importantly, these high hole mobilities are achieved without multistep OTS treatments, argon protection, or post‐annealing conditions. Grazing incidence wide‐angle x‐ray scattering (GIWAX) data revealed that in the P3HT‐b‐PFMA copolymers, the P3HT rod block self‐assembles into highly ordered lamellar structures, similar to that of the rr‐P3HT homopolymer. Grazing incidence small‐angle x‐ray scattering (GISAXS) data revealed that lamellar structures are only observed in perpendicular direction with short PFMA blocks, while lamellae in both perpendicular and parallel directions are observed in polymers with longer PFMA blocks. AFM, GIWAXS, and contact angle measurements also indicate that PFMA block assembles at the polymer thin film surface and forms an encapsulation layer. The high charge carrier mobilities and the hydrophobic surface of the block copolymer films clearly demonstrates the influence of the coil block segment on device performance by balancing the crystallization and microphase separation in the bulk morphological structure.     

High Carrier Density and Metallic Conductivity in Poly(3‐hexylthiophene) Achieved by Electrostatic Charge Injection

The use of electrostatic charge injection (i.e., the transverse field effect) to induce both very large two‐dimensional hole densities (～ 10¹⁵ charges cm^–2) and metallic conductivities in poly(3‐hexylthiophene) (P3HT) is reported. Films of P3HT are electrostatically gated by a solution‐deposited polymer‐electrolyte gate dielectric in a field‐effect‐transistor configuration. Exceptionally high hole field‐effect mobilities (up to 0.7 cm² V^–1 s^–1) are measured concurrently with large hole densities, resulting in an extremely large sheet conductance of 200 μS sq.^–1. The large room‐temperature conductivity of 1000 S cm^–1 together with the very low measured activation energies (0.7–4 meV) suggest that the metal–insulator transition in P3HT is achieved. A maximum in sheet conductance versus charge density is also observed, which may result from near‐filling of the valence band or from charge correlations that lower the carrier mobility. Importantly, the large hole densities in P3HT are achieved using capacitive coupling between the polymer‐electrolyte gate dielectric and P3HT (i.e., the field effect) and not via chemical or electrochemical doping. Electrostatic control of carrier density up to 10¹⁵ charges cm^–2 (～ 10²² charges cm^–3) opens opportunities to explore systematically the importance of charge‐correlation effects on transport in conjugated polymers without the structural rearrangement associated with chemical or electrochemical doping.     

Measurement of Charge‐Density Dependence of Carrier Mobility in an Organic Semiconductor Blend

Here, a new methodology for analyzing the charge‐density dependence of carrier mobility in organic semiconductors, applicable to the low‐charge‐density regime (10¹⁴–10¹⁷ cm^?3) corresponding to the operation conditions of many organic optoelectronic devices, is reported. For the P3HT/PCBM blend photovoltaic devices studied herein, the hole mobility µ is found to depend on charge density n according to a power law µ(n) ∝ n^δ, where δ = 0.35. This dependence is shown to be consistent with an energetic disorder model based upon an exponential tail of localized intra‐band states.     

Elaboration of P3HT/CNT/PCBM Composites for Organic Photovoltaic Cells

This Full Paper focuses on the preparation of single‐walled or multi‐walled carbon nanotube solutions with regioregular poly(3‐hexylthiophene) (P3HT) and a fullerene derivative 1‐(3‐methoxycarbonyl) propyl‐1‐phenyl[6,6]C₆₁ (PCBM) using a high dissolution and concentration method to exactly control the ratio of carbon nanotubes (CNTs) to the P3HT/PCBM mixture and disperse the CNTs homogeneously throughout the matrix. The CNT/P3HT/PCBM composites are deposed using a spin‐coating technique and characterized by absorption and fluorescence spectroscopy and by atomic force microscopy to underline the structure and the charge transfer between the CNTs and P3HT. The performance of photovoltaic devices obtained using these composites as a photoactive layer mainly show an increase of the short circuit current and a slight decrease of the open circuit voltage which generally leads to an improvement of the solar cell performances to an optimum CNT percentage. The best results are obtained with a P3HT/PCBM (1 : 1) mixture with 0.1 wt % multi‐walled carbon nanotubes with an open circuit voltage (V_oc) of 0.57 V, a current density at the short‐circuit (I_sc) of 9.3 mA cm^–2 and a fill factor of 38.4 %, which leads to a power conversion efficiency of 2.0 % (irradiance of 100 mW cm^–2 spectroscopically distributed following AM1.5).     

High resolution electrical characterisation of organic photovoltaic blends

In this work, electrostatic force microscopy (EFM) and conductive atomic force microscopy (C-AFM) are applied to perform high-resolution electrical characterisation of organic photovoltaic films. These films are composed of the C₆₀-derivative PCBM blended with hole conductive conjugated polymers PPV derivatives or P3HT. It is demonstrated that both EFM and C-AFM are able to electrically evidence phase separation in the blends, suggesting in addition higher density of carriers along interfaces. Correlation between the EFM contrast and the photovoltaic properties of the blends was observed. Local spectroscopy (I-V curves) completes the C-AFM investigations, analysing charge transport mechanisms in the P3HT:PCBM blend. Significant modifications of the local electrical properties of P3HT are shown to occur upon blending. Space charge limited current is evidenced in the blend and a hole mobility of 1.7 × 10⁻² cm² V⁻¹ s⁻¹ is determined for P3HT.     

Temperature‐Resolved Local and Macroscopic Charge Carrier Transport in Thin P3HT Layers

Previous investigations of the field‐effect mobility in poly(3‐hexylthiophene) (P3HT) layers revealed a strong dependence on molecular weight (MW), which was shown to be closely related to layer morphology. Here, charge carrier mobilities of two P3HT MW fractions (medium‐MW: M_n = 7 200 g mol^?1; high‐MW: M_n = 27 000 g mol^?1) are probed as a function of temperature at a local and a macroscopic length scale, using pulse‐radiolysis time‐resolved microwave conductivity (PR‐TRMC) and organic field‐effect transistor measurements, respectively. In contrast to the macroscopic transport properties, the local intra‐grain mobility depends only weakly on MW (being in the order of 10^?2 cm² V^?1 s^?1) and being thermally activated below the melting temperature for both fractions. The striking differences of charge transport at both length scales are related to the heterogeneity of the layer morphology. The quantitative analysis of temperature‐dependent UV/Vis absorption spectra according to a model of F. C. Spano reveals that a substantial amount of disordered material is present in these P3HT layers. Moreover, the analysis predicts that aggregates in medium‐MW P3HT undergo a “pre‐melting” significantly below the actual melting temperature. The results suggest that macroscopic charge transport in samples of short‐chain P3HT is strongly inhibited by the presence of disordered domains, while in high‐MW P3HT the low‐mobility disordered zones are bridged via inter‐crystalline molecular connections.     

Ambipolar Charge Transport in Films of Methanofullerene and Poly(phenylenevinylene)/Methanofullerene Blends

Herein, we report experimental studies of electron and hole transport in thin films of [6,6]‐phenyl C61 butyric acid methyl ester (PCBM) and in blends of poly[2‐methoxy‐5‐(3′,7′‐dimethyloctyloxy)‐1,4‐phenylenevinylene] (MDMO‐PPV) with PCBM. The low‐field hole mobility in pristine MDMO‐PPV is of the order of 10^–7 cm² V^–1 s^–1, in agreement with previous studies, whereas the electron mobility in pristine PCBM was found by current‐density–voltage (J–V) measurements to be of the order of 10^–2 cm² V^–1 s^–1, which is about one order of magnitude greater than previously reported. Adding PCBM to the blend increases both electron and hole mobilities, compared to the pristine polymer, and results in less dispersive hole transport. The hole mobility in a blend containing 67 wt.‐% PCBM is at least two orders of magnitude greater than in the pristine polymer. This result is independent of measurement technique and film thickness, indicating a true bulk property of the material. We therefore propose that PCBM may assist hole transport in the blend, either by participating in hole transport or by changing the polymer‐chain packing to enhance hole mobility. Time‐of‐flight mobility measurements of PCBM dispersed in a polystyrene matrix yield electron and hole mobilities of similar magnitude and relatively non‐dispersive transport. To the best of our knowledge, this is the first report of hole transport in a methanofullerene. We discuss the conditions under which hole transport in the fullerene phase of a polymer/fullerene blend may be expected. The relevance to photovoltaic device function is also discussed.     

The Role of Morphology in Optically Switchable Transistors Based on a Photochromic Molecule/p‐Type Polymer Semiconductor Blend

The correlation between morphology and optoelectronic performance in organic thin‐film transistors based on blends of photochromic diarylethenes (DAE) and poly(3‐hexylthiophene) (P3HT) is investigated by varying molecular weight (M_w = 20–100 kDa) and regioregularity of the conjugated polymer as well as the temperature of thermal annealing (rt‐160 °C) in thin films. Semicrystalline architectures of P3HT/DAE blends comprise crystalline domains, ensuring efficient charge transport, and less aggregated regions, where DAEs are located as a result of their spontaneous expulsion from the crystalline domains during the self‐assembly. The best compromise between field‐effect mobility (μ) and switching capabilities is observed in blends containing P3HT with M_w = 50 kDa, exhibiting μ as high as 1 × 10^?3 cm² V^?1 s^?1 combined with a >50% photoswitching ratio. Higher or lower M_w than 50 kDa are found to be detrimental for field‐effect mobility and to lead to reduced device current switchability. The microstructure of the regioregular P3HT blend is found to be sensitive to the thermal annealing temperature, with an increase in μ and a decrease in current modulation being observed as a response to the light‐stimulus likely due to an increased P3HT‐DAE segregation, partially hindering DAE photoisomerization. The findings demonstrate the paramount importance of fine tuning the structure and morphology of bicomponent films for leveraging the multifunctional nature of optoelectronic devices.     

Optimization of Si NC/P3HT Hybrid Solar Cells

Silicon nanocrystals (Si NCs) are shown to be an electron acceptor in hybrid solar cells combining Si NCs with poly(3‐hexylthiophene) (P3HT). The effects of annealing and different metal electrodes on Si NC/P3HT hybrid solar cells are studied in this paper. After annealing at 150 °C, Si NC/P3HT solar cells exhibit power conversion efficiencies as high as 1.47%. The hole mobility in the P3HT phase extracted from space‐charge‐limited current measurements of hole‐only devices increases from 2.48 × 10^?10 to 1.11 × 10^?9 m² V^?1 s^?1 after annealing, resulting in better transport in the solar cells. A quenching of the open‐circuit voltage and short‐circuit current is observed when high work function metals are deposited as the cathode on Si NC/P3HT hybrid devices.     

Bipolar Charge Transport in PCPDTBT‐PCBM Bulk‐Heterojunctions for Photovoltaic Applications

An experimental study of the transport properties of a low‐bandgap conjugated polymer giving high photovoltaic quantum efficiencies in the near infrared spectral region (E_g‐opt ～ 1.35 eV) is presented. Using a organic thin film transistor geometry, we demonstrate a relatively high in‐plane hole mobility, up to 1.5 · × 10^?2 cm² V^?1 s^?1 and quantify the electron mobility at 3 × · 10^?5 cm² V^?1 s^?1 on a SiO₂ dielectric. In addition, singular contact behavior results in bipolar quasi‐Ohmic injection both from low and high workfunction metals like LiF/Al and Au. X‐ray investigations revealed a degree of interchain π‐stacking that is probably embedded in a disordered matrix. Disorder also manifests itself in a strong positive field dependence of the hole mobility from the electric field. In blends made with the electron acceptor methanofullerene [6,6]‐phenyl C₆₁ butyric acid methyl ester (PCBM), the transistor characteristics suggest a relatively unfavorable intermixing of the two components for the application to photovoltaic devices. We attribute this to a too fine dispersion of [C60]‐PCBM in the polymer matrix, that is also confirmed by the quenching of the photoluminescence signal measured in PCPDTBT [C60]‐PCBM films with various composition. We show that a higher degree of phase separation can be induced during the film formation by using 1,8‐octanedithiol (ODT), which leads to a more efficient electron percolation in the [C60]‐PCBM. In addition, the experimental results, in combination with those of solar cells seem to support the correlation between the blend morphology and charge recombination. We tentatively propose that the drift length, and similarly the electrical fill factor, can be limited by the recombination of holes with electrons trapped on isolated [C60]‐PCBM clusters. Ionized and isolated [C60]‐PCBM molecules can modify the local electric field in the solar cell by build‐up of a space‐charge. The results also suggest that further improvements of the fill factor may also be limited by a strong electrical‐field dependence of the hole transport.     

Charge‐Separation Dynamics in Inorganic–Organic Ternary Blends for Efficient Infrared Photodiodes

Knowledge about the working mechanism of the PbS:P3HT:PCBM [P3HT=poly(3‐hexylthiophene), PCBM=[6,6]‐phenyl‐C₆₁ ‐butyric acid methyl ester] hybrid blend used for efficient near‐infrared photodiodes is obtained from time‐resolved photoluminescence (PL) studies. To understand the role of each component in the heterojunction, the PL dynamics of the ternary (PbS:P3HT:PCBM) blend and the binary (PbS:P3HT, PbS:PCBM and P3HT:PCBM) blends are compared with the PL of the pristine PbS nanocrystals (NCs) and P3HT. In the ternary blend the efficiency of the charge transfer is significantly enhanced compared to the one of PbS:P3HT and PbS:PCBM blends, indicating that both hole and electron transfer from excited NCs to the polymer and fullerene occur. The hole transfer towards the P3HT determines the equilibration of their population in the NCs after the electron transfer towards PCBM, allowing their re‐excitation and new charge transfer process.     

Boosting the Charge Transport Property of Indeno[1,2‐b]fluorene‐6,12‐dione though Incorporation of Sulfur‐ or Nitrogen‐Linked Side Chains

Alkyl chains are basic units in the design of organic semiconductors for purposes of enhancing solubility, tuning electronic energy levels, and tailoring molecular packing. This work demonstrates that the carrier mobilities of indeno[1,2‐b ]fluorene‐6,12‐dione ( IFD )‐based semiconductors can be dramatically enhanced by the incorporation of sulfur‐ or nitrogen‐linked side chains. Three IFD derivatives possessing butyl, butylthio, and dibutylamino substituents are synthesized, and their organic field‐effect transistors (OFET) are fabricated and characterized. The IFD possessing butyl substituents exhibits a very poor charge transport property with mobility lower than 10^?7 cm² V^?1 s^?1. In contrast, the hole mobility is dramatically increased to 1.03 cm² V^?1 s^?1 by replacing the butyl units with dibutylamino groups ( DBA‐IFD ), while the butylthio‐modified IFD ( BT‐IFD ) derivative exhibits a high and balanced ambipolar charge transport property with the maximum hole and electron mobilities up to 0.71 and 0.65 cm² V^?1 s^?1, respectively. Moreover, the complementary metal–oxide–semiconductor‐like inverters incorporated with the ambipolar OFETs shows sharp inversions with a maximum gain value up to 173. This work reveals that modification of the aromatic core with heteroatom‐linked side chains, such as alkylthio or dialkylamino, can be an efficient strategy for the design of high‐performance organic semiconductors.     

Nanomorphology and Charge Generation in Bulk Heterojunctions Based on Low‐Bandgap Dithiophene Polymers with Different Bridging Atoms

Carbon bridged (C‐PCPDTBT) and silicon‐bridged (Si‐PCPDTBT) dithiophene donor–acceptor copolymers belong to a promising class of low bandgap materials. Their higher field‐effect mobility, as high as 10^?2 cm² V^?1 s^?1 in pristine films, and their more balanced charge transport in blends with fullerenes make silicon‐bridged materials better candidates for use in photovoltaic devices. Striking morphological changes are observed in polymer:fullerene bulk heterojunctions upon the substitution of the bridging atom. XRD investigation indicates increased π–π stacking in Si‐PCPDTBT compared to the carbon‐bridged analogue. The fluorescence of this polymer and that of its counterpart C‐PCPDTBT indicates that the higher photogeneration achieved in Si‐PCPDTBT:fullerene films (with either [C60]PCBM or [C70]PCBM) can be correlated to the inactivation of a charge‐transfer complex and to a favorable length of the donor–acceptor phase separation. TEM studies of Si‐PCPDTBT:fullerene blended films suggest the formation of an interpenetrating network whose phase distribution is comparable to the one achieved in C‐PCPDTBT:fullerene using 1,8‐octanedithiol as an additive. In order to achieve a balanced hole and electron transport, Si‐PCPDTBT requires a lower fullerene content (between 50 to 60 wt%) than C‐PCPDTBT (more than 70 wt%). The Si‐PCPDTBT:[C70]PCBM OBHJ solar cells deliver power conversion efficiencies of over 5%.     

Influence of aluminium electrode preparation on PCE values of polymeric solar cells based on P3HT and PCBM

The main goal of the paper was investigation of influence of aluminum electrode preparation via thermal evaporation (TE) and the magnetron sputtering (MS) on power conversion efficiency (PCE) of polymeric solar cells. The photovoltaic properties of such three kinds devices based on poly(3-hexylthiophene-2,5-diyl) (P3HT) as ITO/P3HT/Al, ITO/P3HT:PCBM (1:1, w/w)/Al and ITO/PEDOT:PSS/P3HT:PCBM (1:1, w/w)/Al were investigated. For the constructed devices impedance spectroscopy were analyzed. For devices lack of PEDOT:PSS layer or lack of PCBM, photovoltaic parameters were very low and similar to the parameters obtained for device with Al electrode prepared by magnetron sputtering. The devices comprising PEDOT:PSS with P3HT:PCBM showed the best photovoltaic parameters such as a V_OC of 0.60 V, J_SC of 4.61 mA/cm², FF of 0.21, and PCE of 5.7 × 10^?1%.     

High‐Performance Air‐Processed Polymer–Fullerene Bulk Heterojunction Solar Cells

High photovoltaic device performance is demonstrated in ambient‐air‐processed bulk heterojunction solar cells having an active blend layer of organic poly(3‐hexylthiophene) (P3HT): [6,6]‐phenyl‐C₆₁‐butyric acid methyl ester (PCBM), with power conversion efficiencies as high as 4.1%, which is comparable to state‐of‐the‐art bulk heterojunction devices fabricated in air‐free environments. High‐resolution transmission electron microscopy is combined with detailed analysis of electronic carrier transport in order to quantitatively understand the effects of oxygen exposure and different thermal treatments on electronic conduction through the highly nanostructured active blend network. Improvement in photovoltaic device performance by suitable post‐fabrication thermal processing results from the reduced oxygen charge trap density in the active blend layer and is consistent with a corresponding slight increase in thickness of an ～4 nm aluminum oxide hole‐blocking layer present at the electron‐collecting contact interface.     

Precise Control of Lamellar Thickness in Highly Oriented Regioregular Poly(3‐Hexylthiophene) Thin Films Prepared by High‐Temperature Rubbing: Correlations with Optical Properties and Charge Transport

Precise control of orientation and crystallinity is achieved in regioregular poly(3‐hexylthiophene) (P3HT) thin films by using high‐temperature rubbing, a fast and effective alignment method. Rubbing P3HT films at temperatures T_R ≥ 144 °C generates highly oriented crystalline films with a periodic lamellar morphology with a dichroic ratio reaching 25. The crystallinity and the average crystal size along the chain axis direction, l_c, are determined by high‐resolution transmission electron microscopy and differential scanning calorimetry. The inverse of the lamellar period l scales with the supercooling and can accordingly be controlled by the rubbing temperature T_R. Uniquely, the observed exciton coupling in P3HT crystals is correlated to the length of the average planarized chain segments l_c in the crystals. The high alignment and crystallinity observed for T_R > 200 °C cannot translate to high hole mobilities parallel to the rubbing because of the adverse effect of amorphous zones interrupting charge transport between crystalline lamellae. Although tie chains bridge successive P3HT crystals through amorphous zones, their twisted conformation restrains interlamellar charge transport. The evolution of charge transport anisotropy is correlated to the evolution of the dominant contact plane from mainly face‐on (T_R ≤ 100 °C) to edge‐on (T_R ≥ 170 °C).