One‐Dimensional Metal‐Oxide Nanostructures: Recent Developments in Synthesis,Characterization, and Applications

1D metal‐oxide nanostructures have attracted much attention because metal oxides are the most fascinating functional materials. The 1D morphologies can easily enhance the unique properties of the metal‐oxide nanostructures, which make them suitable for a wide variety of applications, including gas sensors, electrochromic devices, light‐emitting diodes, field emitters, supercapacitors, nanoelectronics, and nanogenerators. Therefore, much effort has been made to synthesize and characterize 1D metal‐oxide nanostructures in the forms of nanorods, nanowires, nanotubes, nanobelts, etc. Various physical and chemical deposition techniques and growth mechanisms are exploited and developed to control the morphology, identical shape, uniform size, perfect crystalline structure, defects, and homogenous stoichiometry of the 1D metal‐oxide nanostructures. Here a comprehensive review of recent developments in novel synthesis, exceptional characteristics, and prominent applications of one‐dimensional nanostructures of tungsten oxides, molybdenum oxides, tantalum oxides, vanadium oxides, niobium oxides, titanium oxides, nickel oxides, zinc oxides, bismuth oxides, and tin oxides is provided.     

Halide‐Transport Chemical Vapor Deposition of Luminescent ZnS:Mn2+ One‐Dimensional Nanostructures

ZnS:M²⁺ (M = Mn, Co, or Cu) single‐crystal one‐dimensional nanostructures have been prepared via a simple halide‐transport chemical vapor deposition (HTCVD) process at a relatively low temperature. The obvious phase transition suggests that doping with Mn favors the formation of the hexagonal phase at a relative low temperature. The strong photoluminescence from blue to green and the yellow–orange emission, which was caused by the doping of various elements in ZnS nanowires and nanobelts, suggests possible applications of the one‐dimensional nanostructures in nanoscale optoelectronic devices.     

One‐Dimensional Microwires Formed by the Co‐Assembly of Complementary Aromatic Donors and Acceptors

A truxene derivative (Tr3) with a C₃ symmetric conjugated plane is synthesized; this derivative is a perfect match, in both size and structure, with its oxidized counterpart, the truxenone derivative (TrO3), a new electron acceptor that was recently reported. The complementary pair, Tr3 and TrO3, sets a good platform for the investigation of aromatic donor–acceptor interactions. Detailed ¹H NMR experiments, photoluminescence spectroscopy, as well as differential scanning calorimetry are performed to investigate the interaction between Tr3 and TrO3, from solution to mesophase. One‐dimensional microbelts readily formed from a 1:1 mixture of Tr3 and TrO3. Scanning electron microscopy, powder X‐ray diffraction, as well as fluorescence microscopy are performed to elucidate their co‐assembly structure in the solid state. Moreover, modulation of the co‐assembly structure is easily realized by changing the concentration or mixing ratio. The present system opens the possibility of forming 1D heterostructures via electron donor–acceptor interaction, and its potential application as P–N junction and photowaveguide materials in optoelectronic devices.     

Low‐Dimensional Transition Metal Dichalcogenide Nanostructures Based Sensors

Two‐dimensional (2D) transition metal dichalcogenides (TMDs) nanostructures have been widely applied in environmental and biological analysis, biomedicine, electronic devices, and hydrogen evolution catalysis. Meanwhile, this excitement in 2D TMDs has spilled over to their counterparts of different dimensionalities like one‐dimensional (1D) and zero‐dimensional (0D) TMDs nanostructures. Eventual physical and chemical properties of TMDs nanostructures still remain to be highly dependent on their dimensionalities and size scale, and recently creatively exploring these physical and chemical properties is extremely impactful for the sensing field of TMD nanomaterials. Herein, we review a wide range of sensing applications based on not only graphene‐like 2D TMDs nanostructures but also the rapidly emerging subclasses of 1D, and 0D TMDs nanostructures. Their unique and interesting structures, excellent properties, and valid preparation methods are also included and the analytical objectives, ranging from heavy metal ions to small molecules, from DNA to proteins, from liquids to even vapors, can be met with extremely high selectivity and sensitivity. We have also analyzed our current understanding of 0D and 1D TMDs nanostructures and learning from graphene with the goal of contributing fresh ideas to the overall development of more advanced future TMDs based sensors.     

Energy Harvesting for Nanostructured Self‐Powered Photodetectors

Harvesting the available forms of energies in the environment to create self‐powered nanosystems is now becoming a technological reality. Self‐powered nanodevices and nanosystems are expected to play a crucial role in the future development of nanotechnology because of their specific role in fundamental studies and nanotechnological applications, mainly due to their size‐dependent properties and independent, sustainable, maintainance‐free operation. As a new field in self‐powered nanotechnology‐related research, self‐powered photodetectors have been developed which exhibit a much faster photoresponse and higher photosensitivity than the conventional photoconductor‐based photodetectors. Herein, the energy‐havesting techniques are discussed and their prospects for application in self‐powered photodetectors are summarized. Moreover, potential future directions of this research area are highlighted.     

Highly Desirable Photodetectors Derived from Versatile Plasmonic Nanostructures

With unique ability to concentrate and manipulate light at nanoscale, surface plasmon resonance technologies create additional opportunities for fabricating superintegration photodetectors with desirable functionalities. To gain an insight into the state‐of‐the‐art of plasmonic photodetectors, recent advances in novel devices as well as potential building blocks are presented herein. The article focuses particularly on understanding the enhancement mechanism of different architectures such as nanoparticles, gratings, waveguides, antennas, and microcavities. Meanwhile, challenges and potential design schemes are proposed in this inspiring field.     

Recent Progress in Solar‐Blind Deep‐Ultraviolet Photodetectors Based on Inorganic Ultrawide Bandgap Semiconductors

Due to its significant applications in many relevant fields, light detection in the solar‐blind deep‐ultraviolet (DUV) wavelength region is a subject of great interest for both scientific and industrial communities. The rapid advances in preparing high‐quality ultrawide‐bandgap (UWBG) semiconductors have enabled the realization of various high‐performance DUV photodetectors (DUVPDs) with different geometries, which provide an avenue for circumventing numerous disadvantages in traditional DUV detectors. This article presents a comprehensive review of the applications of inorganic UWBG semiconductors for solar‐blind DUV light detection in the past several decades. Different kinds of DUVPDs, which are based on varied UWBG semiconductors including Ga₂O₃, Mg_xZn_1?xO, III‐nitride compounds (Al_xGa_1?xN/AlN and BN), diamond, etc., and operate on different working principles, are introduced and discussed systematically. Some emerging techniques to optimize device performance are addressed as well. Finally, the existing techniques are summarized and future challenges are proposed in order to shed light on development in this critical research field.     

Controlled Fabrication of Multitiered Three‐Dimensional Nanostructures in Porous Alumina

We present the fabrication of multitiered branched porous anodic alumina (PAA) substrates consisting of an array of pores branching into smaller pores in succeeding tiers. The tiered three‐dimensional structure is realized by sequentially stepping down the anodization potential while etching of the barrier layer is performed after each step. We establish the key processing parameters that define the tiered porous structure through systematically designed experiments. The characterization of the branched PAA structures reveals that, owing to constriction, the ratio of interpore distance to the anodization potential is smaller than that for pristine films. This ratio varies from 1.8 to 1.3 nm V^?1 depending on the size of the preceding pores and the succeeding tier anodization potential. Contact angle measurements show that the multitiered branched PAA structures exhibit a marked increased in hydrophilicity over two‐dimensional PAA films.     

Low‐Dimensional Lead‐Free Inorganic Perovskites for Resistive Switching with Ultralow Bias

3D organic–inorganic and all‐inorganic lead halide perovskites have been intensively pursued for resistive switching memories in recent years. Unfortunately, instability and lead toxicity are two foremost challenges for their large‐scale commercial applications. Dimensional reduction and composition engineering are effective means to overcome these challenges. Herein, low‐dimensional inorganic lead‐free Cs₃Bi₂I₉ and CsBi₃I₁₀ perovskite‐like films are exploited for resistive switching memory applications. Both devices demonstrate stable switching with ultrahigh on/off ratios (≈10⁶), ultralow operation voltages (as low as 0.12 V), and self‐compliance characteristics. 0D Cs₃Bi₂I₉‐based device shows better retention time and larger reset voltage than the 2D CsBi₃I₁₀‐based device. Multilevel resistive switching behavior is also observed by modulating the current compliance, contributing to the device tunability. The resistive switching mechanism is hinged on the formation and rupture of conductive filaments of halide vacancies in the perovskite films, which is correlated with the formation of AgI_x layers at the electrode/perovskite interface. This study enriches the library of switching materials with all‐inorganic lead‐free halide perovskites and offers new insights on tuning the operation of solution‐processed memory devices.     

Three‐Dimensional Nanostructures for Photonics

Recent progress in direct laser writing of three‐dimensional (3D) polymer nanostructures for photonics is reviewed. This technology has reached a level of maturity at which it can be considered as the 3D analogue of planar electron‐beam lithography. Combined with atomic‐layer deposition and/or chemical‐vapor deposition of dielectrics—the 3D analogues of planar evaporation technologies, the 3D polymer templates can be converted or inverted into 3D high‐refractive‐index‐contrast nanostructures. Examples discussed in this review include positive and inverse 3D silicon‐based woodpile photonic crystals possessing complete photonic bandgaps, novel optical resonator designs within these structures, 3D chiral photonic crystals for polarization‐state manipulation, and 3D icosahedral photonic quasicrystals. The latter represent a particularly complex 3D nanostructure.     

Controlled Growth and Properties of One‐Dimensional ZnO Nanostructures with Ce as Activator/Dopant

A large amount of one‐dimensional (1D) Ce‐doped ZnO nanostructures with different morphologies has been successfully synthesized by annealing a polymeric precursor at various temperatures. The evolution of the morphologies and microstructures was investigated by field‐emission scanning electron microscopy (FE‐SEM), transmission electron microscopy (TEM), and high‐resolution TEM (HRTEM). The results show that the morphologies vary drastically with increasing synthesis temperature and the photoluminescence (PL) of the products depends on both the synthesis and measurement temperatures. The CeO layer forms first and becomes a catalytic center for the ZnO growth. At a synthesis temperature lower than the boiling point of Zn, Zn and O atoms can stack epitaxially along the CeO catalytic layer and form a bicrystal nanobelt‐like structure with a trapezoid‐like end and a concave growth fault center. At a synthesis temperature higher than the boiling point of Zn, however, nanowires with an incommensurately modulated superstructure are obtained due to the high reaction rate and the formation of a periodic separation of the CeO layer. As for the room‐temperature PL of ZnO, the incorporation of donor Ce leads to the disappearance of the green band and the appearance of a purplish‐blue emission peak, whose position shifts towards the red and whose intensity decreases with increasing synthesis temperature. Analysis of this temperature‐dependent luminescence indicates that the purplish‐blue emission of nanobelts prepared at 850 °C originates from a donor‐bound exciton emission, and, contrary to the nanowires, it undergoes a change from an emission of the electron–hole plasma (EHP) to an emission of the donor‐bound exciton with decreasing measurement temperature.     

Two‐Dimensional Molybdenum Trioxide and Dichalcogenides

In the quest to discover the properties of planar semiconductors, two‐dimensional molybdenum trioxide and dichalcogenides have recently attracted a large amount of interest. This family, which includes molybdenum trioxide (MoO₃), disulphide (MoS₂), diselenide (MoSe₂) and ditelluride (MoTe₂), possesses many unique properties that make its compounds appealing for a wide range of applications. These properties can be thickness dependent and may be manipulated via a large number of physical and chemical processes. In this Feature Article, a comprehensive review is delivered of the fundamental properties, synthesis techniques and applications of layered and planar MoO₃, MoS₂, MoSe₂, and MoTe₂ along with their future prospects.     

One‐to‐All Broadcasting of Odd Networks for One‐Port and All‐Port Models

Odd networks were introduced in the context of graph theory. However, their potential as fault‐tolerant multiprocessor networks has been shown. Broadcasting is one of the most important communication primitives used in multiprocessor networks. In this letter, we introduce efficient one‐to‐all broadcasting schemes of odd networks for one‐port and all‐port models. We show the broadcasting time of the former is 2d?2 and that of the latter is d–1. The total time steps taken by the proposed algorithms are optimal.     

Low‐Noise Multispectral Photodetectors Made from All Solution‐Processed Inorganic Semiconductors

Infrared, visible, and multispectral photodetectors are important components for sensing, security and electronics applications. Current fabrication of these devices is based on inorganic materials grown by epitaxial techniques which are not compatible with low‐cost large‐scale processing. Here, air‐stable multispectral solution‐processed inorganic double heterostructure photodetectors, using PbS quantum dots (QDs) as the photoactive layer, colloidal ZnO nanoparticles as the electron transport/hole blocking layer (ETL/HBL), and solution‐derived NiO as the hole transport/electron blocking layer (HTL/EBL) are reported. The resulting device has low dark current density of 20 nA cm^‐2 with a noise equivalent power (NEP) on the order of tens of picowatts across the detection spectra and a specific detectivity (D*) value of 1.2 × 10¹² cm Hz^1/2 W^‐1. These parameters are comparable to commercially available Si, Ge, and InGaAs photodetectors. The devices have a linear dynamic range (LDR) over 65 dB and a bandwidth over 35 kHz, which are sufficient for imaging applications. Finally, these solution‐processed inorganic devices have a long storage lifetime in air, even without encapsulation.     

Single Crystal Microwires of p‐DTS(FBTTh2)2 and Their Use in the Fabrication of Field‐Effect Transistors and Photodetectors

Single crystal microwires of a well‐studied organic semiconductor used in organic solar cells, namely p‐DTS(FBTTh₂)₂, are prepared via a self‐assembly method in solution. The high level of intermolecular organization in the single crystals facilitates migration of charges, relative to solution‐processed films, and provides insight into the intrinsic charge transport properties of p‐DTS(FBTTh₂)₂. Field‐effect transistors based on the microwires can achieve hole mobilities on the order of ≈1.8 cm² V^?1 s^?1. Furthermore, these microwires show photoresponsive electrical characteristics and can act as photoswitches, with switch ratios over 1000. These experimental results are interpreted using theoretical simulations using an atomistic density functional theory approach. Based on the lattice organization, intermolecular couplings and reorganization energies are calculated, and hole mobilities for comparison with experimental measurements are further estimated. These results demonstrate a unique example of the optoelectronic applications of p‐DTS(FBTTh₂)₂ microwires.     

Recent Progress of Heterojunction Ultraviolet Photodetectors: Materials,Integrations, and Applications

Ultraviolet photodetectors (UV PDs) with “5S” (high sensitivity, high signal‐to‐noise ratio, excellent spectrum selectivity, fast speed, and great stability) have been proposed as promising optoelectronics in recent years. To realize high‐performance UV PDs, heterojunctions are created to form a built‐in electrical field for suppressing recombination of photogenerated carriers and promoting collection efficiency. In this progress report, the fundamental components of heterojunctions including UV response semiconductors and other materials functionalized with unique effects are discussed. Then, strategies of building PDs with lattice‐matched heterojunctions, van der Waals heterostructures, and other heterojunctions are summarized. Finally, several applications based on heterojunction/heterostructure UV PDs are discussed, compromising flexible photodetectors, logic gates, and image sensors. This work draws an outline of diverse materials as well as basic assembly methods applied in heterojunction/heterostructure UV PDs, which will help to bring about new possibilities and call for more efforts to unleash the potential of heterojunctions.     

Enhancing the Photoelectric Performance of Photodetectors Based on Metal Oxide Semiconductors by Charge‐Carrier Engineering

Semiconductor‐based photodetectors (PDs) convert light signals into electrical signals via the photoelectric effect, which involves the generation, separation, and transportation of the photoinduced charge carriers, as well as the extraction of these charge carriers to external circuits. Because of their specific electronic and optoelectronic properties, metal oxide semiconductors are widely used building blocks in photoelectric devices. However, the compromise between enhancing the photoresponse and reducing the rise/decay times limits the practical applications of PDs based on metal oxide semiconductors. As the behaviors of the charge carriers play important roles in the photoelectric conversion process of these PDs, researchers have proposed several strategies, including modification of light absorption, design of novel PD heterostructures, construction of specific geometries, and adoption of specific electrode configurations to modulate the charge‐carrier behaviors and improve the photoelectric performance of related PDs. This review aims to introduce and summarize the latest researches on enhancing the photoelectric performance of PDs based on metal oxide semiconductors via charge‐carrier engineering, and proposes possible opportunities and directions for the future developments of these PDs in the last section.     

High‐Density Hotspots Engineered by Naturally Piled‐Up Subwavelength Structures in Three‐Dimensional Copper Butterfly Wing Scales for Surface‐Enhanced Raman Scattering Detection

Very recently, wing scales of natural Lepidopterans (butterflies and moths) manifested themselves in providing excellent three dimensional (3D) hierarchical structures for surface‐enhanced Raman scattering (SERS) detection. But the origin of the observed enormous Raman enhancement of the analytes on 3D metallic replicas of butterfly wing scales has not been clarified yet, hindering a full utilization of this huge natural wealth with more than 175 000 3D morphologies. Herein, the 3D sub‐micrometer Cu structures replicated from butterfly wing scales are successfully tuned by modifying the Cu deposition time. An optimized Cu plating process (10 min in Cu deposition) yields replicas with the best conformal morphologies of original wing scales and in turn the best SERS performance. Simulation results show that the so‐called “rib‐structures” in Cu butterfly wing scales present naturally piled‐up hotspots where electromagnetic fields are substantially amplified, giving rise to a much higher hotspot density than in plain 2D Cu structures. Such a mechanism is further verified in several Cu replicas of scales from various butterfly species. This finding paves the way to the optimal scale candidates out of ca. 175 000 Lepidopteran species as bio‐templates to replicate for SERS applications, and thus helps bring affordable SERS substrates as consumables with high sensitivity, high reproducibility, and low cost to ordinary laboratories across the world.     

Transfer Printing Water‐Soluble Inorganic Salts

This paper reports the first example of the fabrication of KNO₃, K₂CO₃, CuSO₄, NaOH, and mixed‐inorganic‐salt (KNO₃ and KOH) patterns using a transfer‐printing (TP) technique. The transfer quality is found to be related to the concentration of the salt solutions. By varying the immersion time, it is possible to control the heights of the raised features of the transfer‐printed salts from the nanoscale to the submicrometer scale. Utilizing these inorganic salts as water‐soluble masks for microfabrication is demonstrated using patterned NaOH films. The use of water as a developer solvent demonstrates the potential utility of the patterning of inorganic salts as a low‐cost, simple, and, more importantly, environmentally friendly route towards accurate patterning of different materials.