Degradation Effects Related to the Hole Transport Layer in Organic Solar Cells

The influence of the hole transport layer on device stability in polymer:fullerene bulk‐heterojunction solar cells is reported. Three different hole transport layers varying in composition, dispersion solvent, electrical conductivity, and work function were used in these studies. Two water‐based hole transport layers, poly(3,4‐ethylenedioxythiophene):poly(styrene sulfonate) and polyaniline:poly(styrene sulfonate), and one isopropyl alcohol‐based polyaniline:poly(styrene sulfonate) transport layer were investigated. Solar cells with the different hole transport layers were fabricated and degraded under illumination. Current–voltage, capacitance–voltage, and capacitance–frequency data were collected at light intensities of 16, 30, 48, 80, and 100 mW cm^?2 over a period of 7 h. Device performance and stability were compared between nonencapsulated and encapsulated samples to gain understanding about degradation effects related to oxygen and water as well as degradation mechanisms related to the intrinsic instability of the solar cell materials and interfaces. It is demonstrated that the properties of the hole transport layer can have a significant impact on the stability of organic solar cells.     

A model for laterally graded Cu2S/ZnxCd1-xS photovoltaic heterojunctions

A model is presented for the Cu₂S/Zn_xCd_1-xS heterojunction that is based on the existence of a laterally graded zinc rich region just below the Cu₂S-ZnCdS interface. Integrals for short circuit current density and current density versus applied voltage are presented. The current-voltage characteristics, in particular the increase in open circuit voltage and decrease in short circuit current density that occur with increasing zinc content, follow trends that have been seen experimentally for junctions formed by ion-exchange. Supported by the Solar Energy Research Institute.     

Performance analysis of dye solar cell with additional TiO2 layer under different light Intensities

Deployment of dye solar cells (DSCs) for building integration application would require a highly efficient solar cell that work well in diffused light. In order to improve the efficiency of dye solar cell, an additional layer of ultrathin anatase titanium dioxide (TiO₂) has been deposited for strengthening the adhesion of the porous TiO₂-based photo electrode to the conductive transparent substrate, which can lead to an enhancement in electron transportation. Fabricated cells of 1 cm² area were tested under different light intensities (100, 33 and 10 mW cm⁻²) and characterized by scanning electron microscopy (SEM), Raman spectroscopy and electrochemical impedance spectroscopy (EIS). Analysis showed an increment in overall quantum conversion efficiency (η), as high as 35% compared to the standard cell without the additional layer of TiO₂. EIS analysis has proven that the additional ultrathin anatase layer has improved the collection efficiency (Φ_COLL) as the result of the enhancement in both electron transport and lifetime within the porous TiO₂ film which translated into better conversion efficiency of DSCs.     

Formation and characterization of (CdZn)S films and (CdZn)S/Cu2s heterojunctions

The present status of (CdZn)S/Cu₂S thin film solar cells is reviewed. A new source design has been used to improve the (CdZn)S films. Light reflection loss has been reduced to ∼ 5% by texturing the (CdZn)S surface prior to Cu₂S formation. Using 90% transparent grids, current densities over 16 ma/cm² and open circuit voltages over 0.7 volts have been obtained, with a best power conversion efficiency of 6.29%.     

Limiting factors on the semiconductor structure of III–V multijunction solar cells for ultra‐high concentration (1000–5000 suns)

The main limiting factors of multijunction solar cells operating under ultra‐high concentration (>1000 suns) are examined by means of 2D physically based numerical modelling. The validation of the model is carried out by fitting calibrated light concentration measurements. Because the series resistance is the most important constraint in the electrical performance of the solar cell under ultra‐high irradiance, it is analysed and quantified detailing different contributions such as: (i) the electrical properties of the emitter; (ii) window layer of the top cell; and (iii) the band discontinuities formed at heterojunctions. We found the role of window layer to be important at very high concentrations (above 700 suns), while at ultra‐high concentrations, (above 1000 suns) a gain in efficiency (~ 1% absolute) can be obtained by a proper structural design of the window layer. In the case of the heterojunctions included in the multijunction solar cell, the impact of a high‐band offset can be mitigated by increasing the doping level density thus favouring the tunnelling effect. Moreover, the influence of different recombination mechanisms and high‐injection effects at ultra‐high irradiance is discussed. Finally, an optimisation of the complete solar cell taking into account the ohmic contacts to work under ultra‐high irradiances (from 1000 to 5000 suns) is presented as well as the implications on the use of ultra‐high irradiance in different multijunction solar cell architectures. Copyright © 2016 John Wiley & Sons, Ltd.