Effects of Calcium Substitution on the Structural and Microwave Dielectric Characteristics of [(Pb1−xCax)1/2La1/2](Mg1/2Nb1/2)O3 Ceramics

The effects of calcium substitution on the structural and microwave dielectric characteristics of [(Pb_{1− x} Ca _x )_1/2La_1/2](Mg_1/2Nb_1/2)O₃ ceramics (with x = 0.01–0.5) were investigated. All the materials were observed to have an ordered A(B_1/2^'B_1/2^")O₃-type perovskite structure; however, the space group of the structure changed from Fm 3 m to Pa 3 as the calcium content increased to x = 0.1, and then from Pa 3 to R 3¯ at the x = 0.5 composition. During the structural evolution, the lattice parameter of the perovskite cell decreased linearly, and the dielectric constant ( k ) also decreased, from k = 80 to k = 38. However, the product of the quality factor and the resonant frequency ( Q × f ) increased from 50 000 GHz to 90 000 GHz as the calcium content increased. Also, the temperature coefficient of resonant frequency (τ_ƒ) gradually changed from 120 ppm/°C to −40 ppm/°C as the calcium content increased. At the x = 0.3 composition, a combination of properties— k ∼ 50, Q × f ∼ 86 000 GHz, and τ_ƒ∼ 0 ppm/°C—can be obtained.     

Dielectric Properties of Pb0.97La0.02(Zr0.87−xSnxTi0.13)O3 Thin Films with Compositions near the Morphotropic Phase Boundary

Pb_0.97La_0.02(Zr_{0.87− x} Sn _x Ti_0.13)O₃ (PLZST, x =0.27, 0.17, 0.07)) thin films with the compositions in ferroelectric rhombohedral (FE_R) region, near the morphotropic phase boundary (MPB), were deposited on the Pt-electroded silicon (PtSi) substrates by the sol–gel process. The phase structure and surface morphology of PLZST thin films were analyzed by XRD and SEM, respectively. The dc electric field and temperature-dependent dielectric properties of the PLZST thin films were investigated in detail. The results indicated that the dielectric constant, remnant polarization, and the Curie temperature ( T _c) of PLZST films were elevated with the decrease of Sn content. Hence, the larger dielectric tunability (τ) was obtained for PLZST thin films with x =0.07, and the maximum τ value was 78.1%.     

K/Na Ratio Dependence of the Electrical Properties of [(KxNa1−x)0.95Li0.05](Nb0.95Ta0.05)O3 Lead-Free Ceramics

[(K _x Na_{1− x} )_0.95Li_0.05](Nb_0.95Ta_0.05)O₃ (K _x NLNT) ( x= 0.40–0.60) lead-free piezoelectric ceramics were prepared by conventional solid-state sintering. The effects of K/Na ratio on the dielectric, piezoelectric, and ferroelectric properties of the K _x NLNT ceramics were studied. The experimental results show that the electrical properties strongly depend on the K/Na ratio in the K _x NLNT ceramics. The K _x NLNT ( x =0.42) ceramics exhibit enhanced properties ( d ₃₃∼242 pC/N, k _p∼45.7%, k _t∼47%, T _c∼432°C, T _o−t =48°C, ɛ_r∼1040, tanδ∼2.0%, P _r∼26.4 μC/cm², E _c∼10.3 kV/cm). Enhanced electrical properties of the K _x NLNT ( x =0.42) ceramics could be attributed to the polymorphic phase transition near room temperature. These results show that the K _x NLNT ( x =0.42) ceramic is a promising lead-free piezoelectric material.     

Microstructure and Electrical Properties of [(K0.50Na0.50)0.95−xLi0.05Agx](Nb0.95Ta0.05)O3 Lead-Free Ceramics

[(K_0.50Na_0.50)_{0.95− x} Li_0.05Ag _x ](Nb_0.95Ta_0.05)O₃ (KNLNANT- x ) lead-free piezoelectric ceramics were prepared by normal sintering. Effects of the Ag content on the microstructure and electrical properties of KNLNANT- x ceramics were systematically investigated. It is found that the ceramics with x =0.03 exhibit relatively good electrical properties along with high Curie temperature: ( d ₃₃∼252 pC/N, T _c∼438°C, k _p∼45.4%, P _r∼30.1 μC/cm², E _c∼13.8 kV/cm, ɛ_r∼1030, and tan δ∼2.6%). The related mechanism for enhanced electrical properties of the ceramics was also discussed. These results show that KNLNANT-0.03 ceramic is a promising candidate material for high temperature lead-free piezoelectric ceramics.     

High Piezoelectric and Dielectric Properties of La-Doped 0.3Pb(Zn1/3Nb2/3)O3–0.7Pb(ZrxTi1−x)O3 Ceramics Near Morphotropic Phase Boundary

La-doped 0.3Pb(Zn_1/3Nb_2/3)O₃–0.7Pb(Zr _x Ti_{1− x} )O₃ ( x =0.5–0.53) piezoelectric ceramics with pure perovskite phase were synthesized by a two-step hot-pressing route. The piezoelectric properties of various compositions near the morphotropic phase boundary (MPB) were systematically investigated. Not only was the exact MPB of this system determined via X-ray diffractometry analysis, but also the peak of piezoelectric properties was found near the MPB. The optimum piezoelectric properties of this series were observed in the specimen with Zr/Ti=51/49. The piezoelectric coefficient ( d ₃₃) and electromechanical coupling factor ( k _p) were 845 pC/N and 0.70, respectively, which have not been reported in this system so far. Large permittivity (ɛ_r=4088) and permittivity maximum (ɛ_m=29 500) were also obtained for the poled specimens. The temperatures ( T _max) of the permittivity maxima ranged from 206° to 213°C with various Zr/Ti ratios.     

Ferroelectric and Ferromagnetic Properties of Hot-Pressed Bi0.95−xLa0.05TbxFeO3 Ceramics

Multiferroic Bi_{0.95− x} La_0.05Tb _x FeO₃ (BLTFO) ceramics were prepared by hot-pressing. It was found that their dielectric properties were very sensitive to sintering temperature. The samples hot-pressed at 740°C show stable dielectric constant and rather low loss (∼1%) in the frequency range up to 1 MHz. When the nominal content of Tb is <0.08, the atomic arrangement keeps the R 3 c symmetry, while a phase transition appears at x ≈0.08–0.10. The introduction of Tb enhances the coercive field of the BLTFO ceramics and then restrains the ferroelectricity gradually. The doping of Tb at x ≤0.10 increases the ferromagnetization.     

High Q Microwave Dielectric Ceramics in (Ni1−x Znx)Nb2O6 System

(Ni_{1− x} Zn _x )Nb₂O₆, 0≤ x ≤1.0, ceramics with >97% density were prepared by a conventional solid-state reaction, followed by sintering at 1200°–1300°C (depending on the value of x ). The XRD patterns of the sintered samples (0≤ x ≤1.0) revealed single-phase formation with a columbite ( Pbcn ) structure. The unit cell volume slightly increased with increasing Zn content ( x ). All the compositions showed high electrical resistivity (ρ_dc=1.6±0.3 × 10¹¹Ω·cm). The microwave (4–5 GHz) dielectric properties of (Ni_{1− x} Zn _x )Nb₂O₆ ceramics exhibited a significant dependence on the Zn content and to some extent on the morphology of the grains. As x was increased from 0 to 1, the average grain size monotonically increased from 7.6 to 21.2 μm and the microwave dielectric constant (ɛ'_r) increased from 23.6 to 26.1, while the quality factors ( Q _u× f ) increased from 18 900 to 103 730 GHz and the temperature coefficient of resonant frequency (τ_f) increased from −62 to −73 ppm/°C. In the present work, we report the highest observed values of Q _u× f =103 730 GHz, and ɛ'_r=26.1 for the ZnNb₂O₆-sintered ceramics.     

Phase Transitions and Electrical Properties of (Na1−xKx)(Nb1−ySby)O3 Lead-Free Piezoelectric Ceramics With a MnO2 Sintering Aid

Lead-free piezoelectric ceramics (Na_{1− x} K _x )(Nb_{1− y} Sb _y )O₃+ z mol% MnO₂ have been prepared by a conventional solid-state sintering technique. Our results reveal that Sb⁵⁺ diffuses into the K_0.5Na_0.5NbO₃ lattices to form a solid solution with a single-phase orthorhombic perovskite structure. The partial substitution of Sb⁵⁺ for B-site ion Nb⁵⁺ decreases the paraelectric cubic-ferroelectric tetragonal phase transition ( T _c) and the ferroelectric tetragonal-ferroelectric orthorhombic phase transition ( T _O–F), and retains strong ferroelectricity. A small amount of MnO₂ is enough to improve the densification of the ceramics. The co-effects of MnO₂ doping and Sb substitution lead to significant improvements in ferroelectric and piezoelectric properties. The ceramics with x =0.45–0.525, y =0.06–0.08, and z =0.5–1 exhibit excellent ferroelectric and piezoelectric properties: d ₃₃=163–204 pC/N, k _P=0.47–0.51, k _t=0.46–0.52, ɛ=640–1053, tan δ=1.3–3.0%, P _r=18.1–22.6 μC/cm², E _c=0.72–0.98 kV/mm, and T _C=269°–314°C.     

Bismuth/Samarium Cosubstituted Ba6−3xNd8+2xTi18O54 Microwave Dielectric Ceramics

Modification of the microwave dielectric properties in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x = 0.5) solid solutions by Bi/Sm cosubstitution for Nd was investigated. A large increase in the dielectric constant and near-zero temperature coefficient combined with high Qf values were obtained in modified Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ solid solutions where an enlarged solid solution limit of Bi in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ was observed. Excellent microwave dielectric characteristics (ɛ= 105, Qf = 4110 GHz, and very low τ_f) were achieved in the composition Ba_{6−3 x} (Nd_0.7Bi_0.18Sm_0.12)_{8+2 x} Ti₁₈O₅₄.     

Dielectric Properties of (Pb1–xXx) (Zr0.7Ti0.3)O3 (X = Ca, Sr, Ba) Ceramics

The dielectric properties of (Pb_{1– x} X_x) (Zr_0.7Ti_0.3)O₃ (X = Ca, Sr, Ba) ceramics (abbreviated PXZT) were investigated for applications to multilayer ceramic capacitors (MLCs) with dielectric layers thinner than 10 μm. The dissipation factors for MLCs with 5-μm-thick dielectric layers were estimated from those for 100-μm-thick disk specimens measured at an oscillation voltage of 20 V_rms. Those for PCZT and PSZT were less than 1.0% when the oscillation voltage was 20 V_rms, while those for conventional BaTiO₃-based dielectric ceramics were greater than 2.5% at 20 V_rms. According to polarization–electric field hysteresis measurements, PCZT and PSZT revealed linear and double hysteresis loops, respectively, while PBZT and BaTiO₃ indicated typical ferroelectric hysteresis loops. The differences in the dissipation factors for the dielectric compositions are attributed to hysteresis in the polarization–electric field loops. These results suggest that PCZT and PSZT are promising dielectric ceramics for MLCs with dielectric layers thinner than 10 μm.     

Improved Microwave Dielectric Properties of Ba6Ti1−xSnxNb4O18 Ceramics

Single-phase polycrystalline microwave dielectric ceramics Ba₆Ti_{1− x} Sn _x Nb₄O₁₈, with x changing from 0 to 1, were synthesized by the solid-state reaction method. All the solid solutions fitted well with A₆B₅O₁₈ cation-deficient hexagonal perovskite structure. The substitution of Sn for Ti effectively enhanced the quality factor and controlled τ_f. With increasing Sn content, the dielectric constant decreased from ∼47 to ∼32, and the Q × f value increased significantly from 11 530 to 28 496 GHz, with τ_f varying from 64 to 0 ppm/°C. A zero τ_f was realized when Sn was fully replaced by Ti with the composition Ba₆SnNb₄O₁₈.     

Ba(Ti1−xSnx)O3 (x=0.13) Dielectric Ceramics Prepared by Coprecipitation

Fine-grain BaTi_0.87Sn_0.13O₃ (BTS₁₃) powder was synthesized from an oxalate precursor and used to prepare sintered ferroelectric BTS₁₃ ceramics. The evolution of the morphology and structure of a BTS₁₃ precipitate precursor as a function of temperature was analyzed. We compare the sintering behavior as well as the dielectric properties of the BTS₁₃ ceramics obtained using uniaxial and cold isostatic pressing.     

Microstructure, Density, and Dielectric Properties of Lead-Free (K0.44Na0.52Li0.04)(Nb0.96−xTaxSb0.04)O3 Piezoelectric Ceramics

Lead-free (K_0.44Na_0.52Li_0.04) (Nb_0.96−xTa_xSb_0.04)O₃ piezoelectric ceramics were prepared by the conventional solid-state sintering method. The grain growth of the ceramics was inhibited and the relative density was improved with Ta substituting for Nb. Increasing x led to different variations of dielectric properties before and after poling, and prevented the occurrence of orthorhombic–tetragonal phase transition (at T _{o − t} ). All the ceramics show an intermediate relaxor-like behavior between normal and ideal relaxor ferroelectrics. Significantly enhanced dielectric and piezoelectric properties were obtained in the ceramics with x =0.20. The ceramics are very promising lead-free materials for electromechanical device applications.     

Structural and Dielectric Properties of Ag(Nb0.8Ta0.2)1−xSbxO3 (x≤0.08) Ceramics

Sb₂O₅ were selected to substitute (Nb_0.8Ta_0.2)₂O₅ and the effects of Sb substitution on the dielectric properties of Ag(Nb_0.8Ta_0.2)O₃ ceramics were studied. The perovskite Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics showed no obvious change with x value being no more than 0.08, and the pseudoperovskite unit cell parameters a = c , b and monoclinic angle β decrease with Sb concentration increasing. The dielectric properties of Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics were found to be affected greatly by the substitution of Sb for Nb/Ta. The ɛ value of Ag(Nb_0.8Ta_0.2)_{1− x} Sb _x O₃ ceramics sintered at their densified temperature increased from 480 to 825 with x from 0 to 0.08, the tan δ value decreased sharply from 0.0065 to 0.0023 (at 1 MHz) with x increasing from 0 to 0.04, and then kept a stable lower tan δ value ∼0.0024 with x to 0.08. The temperature coefficient of capacitance values continuously decreased from a positive value of 1450 ppm/°C for x =0 to a negative value of −38.52 ppm/°C for x =0.08.     

Cation Ordering and Domain Boundaries in Ca[(Mg1/3Ta2/3)1−xTix]O3 Microwave Dielectric Ceramics

Cation ordering and domain boundaries in perovskite Ca[(Mg_1/3Ta_2/3)_{1− x} Ti _x ]O₃ ( x =0.1, 0.2, 0.3) microwave dielectric ceramics were investigated by high-resolution transmission electron microscopy (HRTEM) and Rietveld analysis. The variation of ordering structure with Ti substitution was revealed together with the formation mechanism of ordering domains. When x =0.1, the ceramics were composed of 1:2 and 1:1 ordered domains and a disordered matrix. The 1:2 cation ordering could still exist until x =0.2 but the 1:1 ordering disappeared. Neither 1:2 nor 1:1 cation ordering could exist at x =0.3. The space charge model was used to explain the cation ordering change from 1:2 to 1:1 and then to disorder. A comparison between the space charge model and random layer model was also conducted. HRTEM observations showed an antiphase boundary inclined to the (111) _c plane with a projected displacement vector in the 〈001〉 _c direction and ferroelastic domain boundaries parallel to the 〈100〉 _c direction.     

Tin Substitution for Titanium in Ba6−3xNd8+2xTi18O54 Microwave Dielectric Ceramics

Tin (Sn) substitution for titanium (Ti) was investigated in Ba_{6−3 x} Nd_{8+2 x} Ti₁₈O₅₄ ( x =1/2, 2/3, and 3/4) ceramics. A small amount ( z <0.1) of Sn substitution resulted in Ba_{6−3 x} Nd_{8+2 x} (Ti_{1− z} Sn _z )₁₈O₅₄ solid solutions, and some secondary phases were observed with increasing Sn content. A small amount of Sn substitution improved the Q f value significantly, while, due to the formation of secondary phases, the Q f value degraded sharply for larger Sn content. The relative dielectric constant (ɛ_r) decreased with increasing Sn-content, while the temperature coefficient of resonant frequency (τ_f) generally decreased, although an obvious fluctuation was observed for x =3/4.     

Compositional Dependence of Microwave Dielectric Properties in (1 −x)(Na1/2Nd1/2)TiO3−xNd(Mg1/2Ti1/2)O3 Ceramics

The compositional dependence of microwave dielectric properties has been investigated in the (1 − x )(Na_1/2Nd_1/2)TiO₃− x Nd(Mg_1/2Ti_1/2)O₃ (NNT-NMT) system. The addition of NMT results in significant improvement in the quality factor and the temperature coefficient of frequency, but gradually decreases the dielectric constant from ∼100 for pure NNT to ∼25 for pure NMT. The single perovskite phase is observed with various { hkl } superlattice reflections over the entire compositional range. The increasing tendency of peak splitting with increasing x at some perovskite reflections strongly suggests that the crystal structure of the system changes to lower symmetry structures. This is confirmed using infrared reflectivity spectra. The superlattice reflections related to structural deviation become more predominant as the composition reaches pure NMT. Particularly, {111} superlattice reflections are believed to be associated with the 1:1 cation ordering and responsible for the observed abrupt increase in quality factor at x > 0.7.     

Low-Temperature Firing and Microwave Dielectric Properties of Ca[(Li1/3Nb2/3)0.84Ti0.16]O3−δ Ceramics for LTCC Applications

The effects of LiF and ZnO–B₂O₃–SiO₂ (ZBS) glass combined additives on phase composition, microstructures, and microwave dielectric properties of Ca[(Li_1/3Nb_2/3)_0.84Ti_0.16]O_3−δ (CLNT) ceramics were investigated. The LiF and ZBS glass combined additives lowered the sintering temperature of CLNT ceramics effectively from 1150° to 880°C. The main diffraction peaks of all the specimens split due to the coexistence of the non-stoichiometric phase (A) and stoichiometric phase (B), which all possess CaTiO₃-type perovskite structures. The transformation from A into B became accelerated with the increase of LiF or ZBS content. ZBS glass restrained the volatilization of lithium salt, which greatly affected the microstructures and microwave dielectric properties. CLNT ceramics with 2 wt% LiF and 3 wt% ZBS sintered at 900°C for 2 h show excellent dielectric properties: ɛ_r=34.3, Q × f =17 400 GHz, and τ_f=−4.6 ppm/°C. It is compatible with Ag electrodes, which makes it a promising ceramic for low-temperature cofired ceramics technology application.     

Effects of V Substitution on Dielectric and Polarization Properties for Sr0.5Bi2.25Na1.25(Nb3−xVx)O12 Ceramics

The effects of V substitution for Nb on the dielectric and polarization properties of Sr_0.5Bi_2.25Na_1.25(Nb_{3− x} V _x )O₁₂ ceramics were investigated in this study. From the X-ray powder diffraction results, no secondary phase was detected in the composition range of 0–0.075. The remanent polarizations ( P _r) of the samples in the composition range of 0–0.03 were improved by the V substitution for Nb and the highest P _r value of approximately 15 μC/cm² was obtained at x =0.03; it was noted that the V substitution for Nb was effective in improving the P _r values in this ceramics. On the other hand, the coercive fields ( E _c) of the samples were on the order of approximately 40 kV/cm in such a composition range. Moreover, the anomalous variations in the dielectric constant were observed in the composition range of 0–0.075. Also, it was observed that the dielectric loss increased drastically at the temperature of approximately 500°C.