Wettability of electroplated Ni-P in under bump metallurgy with Sn-Ag-Cu solder

Nickel plating has been used as the under bump metallurgy (UBM) in the microelectronics industry. In this study, the electroplating process was demonstrated to be a good alternative approach to produce the Ni-P layer as UBM. The wettability of several commercial solder pastes, such as Sn-3.5Ag, Sn-37Pb, and Sn-3Ag-0.5Cu solder, on electroplated Ni-P with various phosphorous contents (7 wt.%, 10 wt.%, and 13 wt.%) was investigated. The role of phosphorus in the wettability was probed. The surface morphology and surface roughness in electroplated Ni-P was observed with the aid of both field emission scanning electron microscope (SEM) and atomic force microscope (AFM). The correlation between wettability and phosphorus contents in electroplated Ni-P was evaluated. As the phosphorous contents increased, the surface morphology of the Ni-P deposit was smoother and surface roughness of Ni-P became smaller. The improvement of surface morphology and surface roughness enhanced the wettability of electroplated Ni-P. The interfacial reaction between lead-free solder and electroplating Ni-P UBM was also investigated.     

Interfacial reaction and microstructural evolution for electroplated Ni and electroless Ni in the under bump metallurgy with 42Sn58Bi solder during annealing

In the present study, several under bump metallization (UBM) schemes using either electroplated Ni or electroless Ni (EN) as the solderable layer are investigated. The EN and electroplated Ni are first deposited on Cu/Al₂O₃ substrates, followed by electroplating of thin gold coatings. Joints of 42Sn-58Bi/Au/EN/Cu/Al₂O₃ and 42Sn-58Bi/Au/Ni/Cu/Al₂O₃ are annealed at 145 C and 185CC for 30–180 minutes to investigate the interfacial reaction between the solder and metallized substrates. For 42Sn-58Bi/Au/Ni-5.5wt.%P/Cu/Al₂O₃, 42Sn-58Bi/Au/Ni-12.1wt.%P/Cu/Al₂O₃, and 42Sn-58Bi/Au/Ni/CU/Al₂O₃ joints annealed at 145 C, only Ni₃Sn₄ intermetallic compound (IMC) formed at the solder/EN interace. When annealed at an elevated temperature of 185 C, plate-like Ni₃Sn₄ IMC forms at the solder/Ni-5.5wt.%P interface, while a trace of (Ni, Cu)₃Sn₄ IMC is observed at the solder/Ni-12.1wt.%P interface and within the solder region. For the electroplated Ni-based multi-metallization substrate, the Ni₃Sn₄ IMC is present at the solder/Ni interface during annealing at 185 C for a short period of time. In the 42Sn-58Bi/Au/EN/Cu/Al₂O₃ joint, the EN spalls off the EN layer and migrates into the solder region when annealed at 185 C. The interface of the solder/electroplating Ni becomes saw-toothed as the annealing temperature is raised to 185 C. In addition, an enrichment of phosphorus is observed at the interface of the Ni-Sn IMC and EN.     

Studies of electroless nickel under bump metallurgy—Solder interfacial reactions and their effects on flip chip solder joint reliability

The electroless-deposited Ni-P under bump metallurgy (UBM) layer was fabricated on Al pads for Sn containing solder bumps. The amount of P in the electroless Ni film was optimized by controlling complexing agents and the pH of plating solution. The interfacial reaction at the electroless Ni UBM/solder interface was investigated in this study. The intermetallic compound (IMC) formed at the interface during solder reflowing was mainly Ni₃Sn₄, and a P-rich Ni layer was also formed as a by-product of Ni-Sn reaction between the Ni-Sn IMC and the electroless Ni layer. One to four microns of Ni₃Sn₄ IMC and a 1800–5000 Å of P-rich Ni layer were formed in less than 10 min of solder reflowing depending on solder materials and reflow temperatures. It was found that the P-rich Ni layer contains Ni, P, and a small amount of Sn (～7 at.%). Further cross-sectional transmission electron microscopy (TEM) analysis confirmed that the composition of the P-rich Ni layer was 75 at.% Ni, 20at.%P, and 5at.%Sn by energy-dispersive x-ray spectroscopy (EDS) and the phase transformation occurred in the P-rich Ni layer by observing grain size. Kirkendall voids were also found in the Ni₃Sn₄ IMC, just above the P-rich Ni layer after extensive solder reflow. The Kirkendall voids are considered a primary cause of the brittle fracture; restriction of the growth of of the P-rich Ni layer by optimizing proper processing conditions is recommended. The growth kinetics of Ni-Sn IMC and P-rich Ni layer follows three steps: a rapid initial growth during the first 1 min of solder reflow, followed by a reduced growth step, and finally a diffusion-controlled growth. During the diffusion-controlled growth, there was a linear dependence between the layer thickness and time^1/2. Flip chip bump shear testing was performed to measure the effects of the IMC and the P-rich Ni layers on bump adhesion property. Most failures occurred in the solder and at the Ni₃Sn₄ IMC. The brittle characteristics of the Ni-Sn IMC and the Kirkendall voids at the electroless Ni UBM-Sn containing solder system cause brittle bump failure, which results in a decreased bump adhesion strength.     

Effects of Cu contents in Pb-free solder alloys on interfacial reactions and bump reliability of Pb-free solder bumps on electroless Ni-P under-bump metallurgy

Using the screen-printed solder-bumping technique on the electroless plated Ni-P under-bump metallurgy (UBM) is potentially a good method because of cost effectiveness. As SnAgCu Pb-free solders become popular, demands for understanding of interfacial reactions between electroless Ni-P UBMs and Cu-containing Pb-free solder bumps are increasing. It was found that typical Ni-Sn reactions between the electroless Ni-P UBM and Sn-based solders were substantially changed by adding small amounts of Cu in Sn-based Pb-free solder alloys. In Cu-containing solder bumps, the (Cu,Ni)₆Sn₅ phase formed during initial reflow, followed by (Ni,Cu)₃Sn₄ phase formation during further reflow and aging. The Sn3.5Ag solder bumps showed a much faster electroless Ni-P UBM consumption rate than Cu-containing solder bumps: Sn4.0Ag0.5Cu and Sn0.7Cu. The initial formation of the (Cu,Ni)₆Sn₅ phase in SnAgCu and SnCu solders significantly reduced the consumption of the Ni-P UBM. The more Cu-containing solder showed slower consumption rate of the Ni-P UBM than the less Cu-containing solder below 300°C heat treatments. The growth rate of the (Cu,Ni)₆Sn₅ intermetallic compound (IMC) should be determined by substitution of Ni atoms into the Cu sublattice in the solid (Cu,Ni)₆Sn₅ IMC. The Cu contents in solder alloys only affected the total amount of the (Cu,Ni)₆Sn₅ IMC. More Cu-containing solders were recommended to reduce consumption of the Ni-based UBM. In addition, bump shear strength and failure analysis were performed using bump shear test.     

Compound formation for electroplated Ni and electroless Ni in the under-bump metallurgy with Sn-58Bi solder during aging

The Ni-based under-bump metallurgies (UBMs) are of interest because they have a slower reaction rate with Sn-rich solders compared to Cu-based UBMs. In this study, several UBM schemes using Ni as the diffusion barrier are investigated. Joints of Sn-58Bi/Au/electroless nickel (EN)/Cu/Al₂O₃ and Sn-58Bi/Au/electroplated nickel/Cu/Al₂O₃ were aged at 110°C and 130°C for 1–25 days to study the interfacial reaction and microstructural evolution. The Sn-Bi solder reacts with the Ni-based multimetallization and forms the ternary Sn-Ni-Bi intermetallic compound (IMC) during aging at 110°C. Compositions of ternary IMC were (78–80)at.%Sn-(12–16)at.%Ni-(5–8)at.%Bi in joints of Sn-58Bi/Au/Ni-5.5wt.%P/Cu, Sn-58Bi/Au/Ni-12wt.%P/Cu, and Sn-58Bi/Au/Ni/Cu. Elevated aging at 130°C accelerates the IMC growth rate and results in the formation of (Ni,Cu)₃Sn₄ and (Cu,Ni)₆Sn₅ adjacent to the ternary Sn-Ni-Bi IMC for the Sn-58Bi/Au/Ni-12wt.%P/Cu and Sn-58Bi/Au/Ni/Cu joints, respectively. The Cu content in the (Cu,Ni)₆Sn₅ IMC is six times that in (Ni,Cu)₃Sn₄. Electroplated Ni fails to prevent Cu diffusion toward the Ni/solder interface as compared to EN-based joints. Cracks are observed in the Sn-58Bi/Au/Ni-5.5wt.%P/Cu/Al₂O₃ joint aged at 130°C for 25 days. It is more favorable to employ Ni-12wt.%P for the Sn-58Bi/Au/EN/Cu joint. Electroless nickel, with the higher P content of 12 wt.%, is a more effective diffusion barrier during aging. In addition, P enrichment occurs near the interface of the EN/solder, and the degree of P enrichment is enhanced with aging time. The Au(Sn,Bi)₄, with pyramidal and cubic shape, is observed in the Sn-58Bi/Au/Ni/Cu/Al₂O₃ joint.     

Processing and aging characteristics of eutectic Sn-3.5Ag solder reinforced with mechanically incorporated Ni particles

Composite solders offer improved properties compared to non-composite solders. Ni reinforced composite solder was prepared by mechanically dispersing 15 vol.% of Ni particles into eutectic Sn-3.5Ag solder paste. The average size of the Ni particle reinforcements was approximately 5 microns. The morphology, size and distribution of the reinforcing phase were characterized metallographically. Solid-state isothermal aging study was performed on small realistic size solder joints to study the formation and growth of the intermetallic (IM) layers at Ni reinforcement/solder and Cu substrate/solder interfaces. Effects of reflow on microstructure and solderability, were studied using Cu substrates. Regarding solderability, the wetting angle of multiple reflowed Ni reinforced composite solder was compared to the solder matrix alloy, eutectic Sn-3.5Ag. General findings of this study revealed that Ni particle reinforced composite solder has comparable wetting characteristics to eutectic Sn-3.5Ag solder. Significant IM layers growth was observed in the Ni composite solder joint under isothermal aging at 150 C. Microstructural evolution was insignificant when aging temperature was lower than 100 C. Multiple reflow did not significantly change the microstructure in Ni composite solder joint.     

Optimal phosphorous content selection for the soldering reaction of Ni-P under bump metallization with Sn-Ag-Cu solder

Nickel plating has been used as the under bump metallization (UBM) in the microelectronics industry. The electroplated Ni-P UBM with different phosphorous contents (7 wt.%, 10 wt.%, and 13 wt.%) was used to evaluate the interfacial reaction between Ni-P UBM and Sn-3Ag-0.5Cu solder paste during multiple reflow. (Cu,Ni)₆Sn₅ intermetallic compounds (IMC) formed in the SnAgCu solder/Ni-P UBM interface after the first reflow. For three times reflow, (Ni,Cu)₃Sn₄ IMC formed, while (Cu,Ni)₆Sn₅ IMC spalled into the solder matrix. With further increasing cycles of reflow, the Ni-Sn-P layer formed between (Ni,Cu)₃Sn₄ IMC and Ni-P UBM for Ni-10wt.%P and Ni-13wt.%P UBM. However, almost no Ni-Sn-P layer was revealed for the Ni-7wt.%P UBM even after ten cycles of reflow. In consideration of the wettability of Ni-P UBM, the interfacial reaction of SnAgCu/Ni-P, and dissolution of Ni-P UBM, the optimal phosphorous selection in Ni-P UBM was proposed and also discussed.     

Diffusion behavior of Cu in Cu/electroless Ni and Cu/electroless Ni/Sn-37Pb solder joints in flip chip technology

For Cu pads used as under bump metallization (UBM) in flip chip technology, the diffusion behavior of Cu in the metallization layer is an important issue. In this study, isothermal interdiffusion experiments were performed at 240°C for different times with solid-solid and liquid-solid diffusion couples assembled in Cu/electroless-Ni (Ni-10 wt.% P) and Cu/electroless Ni (Ni-10 wt.% P)/ Sn-37Pb joints. The diffusion structure and concentration profiles were examined by scanning electron microscopy and electron microprobe analysis. The interdiffusion fluxes of Cu, Ni and P were calculated from the concentration profiles with the aid of Matano plane evaluation. The values of J_Cu, J_Ni, and J_P decreased with increasing annealing time. The average effective interdiffusion coefficients on the order of 10⁻¹⁴ cm²/s were also evaluated within the diffusion zone. The amounts of Cu dissolved in the intermetallic compounds (IMCs) Ni₃Sn₄ and Ni₃P that precipitate after annealing the Cu/electroless Ni/Sn-37Pb joints were about 0.25 at.% and 0.5 at.%, respectively. For the short period of annealing, it appears that the presence of electroless Ni (EN) with the Sn-Pb soldering reaction assisted the diffusion of Cu through the EN layer.     

The microstructure of eutectic Au-Sn solder bumps on Cu/electroless Ni/Au

In this work we studied the initial microstructure and microstructural evolution of eutectic Au-Sn solder bumps on Cu/electroless Ni/Au. The solder bumps were 150–160 m in diameter and 45–50 m tall, reflowed on Cu/electroless Ni/Au, and then aged at 200°C for up to 365 days. In addition, Au-Ni-Sn-alloys were made and analyzed to help identify the phases that appear at the interface during aging. The detailed interfacial microstructure was observed using a transmission electron microscope (TEM). The results show that the introduction of Au from the substrate produces large islands of-phase in the bulk microstructure during reflow. Two Au-Ni-Sn compounds are formed at the solder/substrate interface and grow slowly during aging. The maximum solubility of Ni in the—phase was measured to be about 1 at.% at 200°C, while Ni in the-phase is more than 20 at.%. The electroless Ni layer is made of several sublayers with slightly different compositions and microstructures. There is, in addition, an amorphous interaction layer at the solder/electroless Ni interface.     

Morphology and kinetic study of the interfacial reaction between the Sn-3.5Ag solder and electroless Ni-P metallization

This work summarizes the interfacial reaction between lead-free solder Sn-3.5Ag and electrolessly plated Ni-P metallization in terms of morphology and growth kinetics of the intermetallic compounds (IMC). Comparison with pure Ni metallization is made in order to clarify the role of P in the solder reaction. During reflow, the IMCs formed with the Ni-P under-bump metallization (UBM) exist in chunky crystal blocks and small crystal agglomerates, while the ones with the sputtered Ni UBM exhibit uniformly scallop grains with faceted surfaces. The IMC thickness increases with reflow time following approximately a t^1/3 power law for both systems. The IMC growth rate is higher with the Ni-P UBM than the Ni UBM. The thickness of the Ni₃Sn₄ layer increases linearly with the square root of thermal aging time, indicating that the growth of the IMCs is a diffusion-controlled process. The activation energy for Ni₃Sn₄ growth in solid-state reaction is found to be 110 kJ/mol and 91 kJ/mol for the Ni-P and sputtered Ni UBMs, respectively. Kirkendall voids are detected inside the Ni₃P layer in the Sn-3.5Ag/Ni-P system. No such voids are found in the Sn-3.5Ag/Ni system.     

Residual stress and interfacial reaction of the electroplated Ni-Cu alloy under bump metallurgy in the flip-chip solder joint

Pure Ni, the Ni-Cu alloy, and pure Cu layers as the under bump metallurgy (UBM) for a flip-chip solder joint were deposited by electrolytic plating. For the pure Ni layer, residual stress can be controlled by adding a wetting agent and decreasing current density, and it is always under tensile stress. The Ni-Cu alloys of different Cu compositions from ∼20wt.%Cu to 100wt.%Cu were deposited with varying current density in a single bath. The residual stress was a strong function of current density and Cu composition. Decreasing current density and increasing Cu content simultaneously causes the residual stress of the metal layers to sharply decrease. For the pure Cu layer, the stress is compressive. The Cu layer acts as a cushion layer for the UBM. The residual stress of the UBM strongly depends on the fraction of the Cu cushion layer. Interfacial reaction of the UBM with Sn-3.5 wt.% Ag was studied. As the Cu contents of Ni-Cu alloys increased, the dissolution rate increased. Several different intermetallic compounds (IMCs) were found. The lattice constants of alloys and the IMC increase with increasing Cu contents because the larger Cu atoms substitute for the smaller Ni atoms in the crystallites. The Cu content of the IMC are strongly dependent on the composition of the alloys. Ball shear tests were done with different metal-layer schemes. The failure occurs through the IMC and solder.     

Creep properties of eutectic Sn-3.5Ag solder joints reinforced with mechanically incorporated Ni particles

The creep deformation behavior of eutectic Sn-3.5Ag based Ni particle rein forced composite solder joints was investigated. The Ni particle reinforced composite solder was prepared by mechanically dispersing 15 vol.% of Ni particles into eutectic Sn-3.5Ag solder paste. Static-loading creep tests were carried out on solder joint specimens at 25 C, 65 C, and 105 C, representing homologous temperatures ranging from 0.6 to 0.78. A novel-design, miniature creep-testing frame was utilized in this study. Various creep parameters such as the global and localized creep strain, steady-state creep rate, onset of tertiary creep and the activation energy for creep were quantified by mapping the distorted laser ablation pattern imprinted on the solder joint prior to testing. The Ni-reinforced composite solder joint showed improved creep resistance compared to the results previously reported for eutectic Sn-3.5Ag solder, Sn-4.0Ag-0.5Cu solder alloys, and for eutectic Sn-3.5Ag solder reinforced with Cu or Ag particle reinforcements. The activation energy for creep was ∼0.52 eV for Sn-3.5Ag and Sn-4Ag-0.5Cu solder alloys. The activation energies ranged from 0.55–0.64 eV for Cu, Ag, and Ni reinforced composite solder joints, respectively. Most often, creep fracture occurred closer to one side of the solder joint within the solder matrix.     

Interfacial reaction between 42Sn-58Bi solder and electroless Ni-P/immersion Au under bump metallurgy during aging

The interfacial reaction between 42Sn-58Bi solder (in wt.% unless specified otherwise) and electroless Ni-P/immersion Au was investigated before and after thermal aging, with a focus on the formation and growth of an intermetallic compound layer, consumption of under bump metallurgy (UBM), and bump shear strength. The immersion Au layer with thicknesses of 0 μm (bare Ni), 0.1 μm, and 1 μm was plated on a 5-μm-thick layer of electroless Ni-P (with 14–15 at.% P). The 42Sn-58Bi solder balls were then fabricated on three different UBM structures by using screen printing and pre-reflow. A Ni₃Sn₄ layer formed at the joint interface after the pre-reflow for all three UBM structures. On aging at 125°C, a quaternary phase, identified as Sn₇₇Ni₁₅Bi₆Au₂, was observed above the Ni₃Sn₄ layer in the UBM structures that contain Au. The thick Sn₇₇Ni₁₅Bi₆Au₂ layer degraded the integrity of the solder joint, and the shear strength of the solder bump was about 40% less than the nonaged joints.     

Interfacial reaction of Pb-Sn solder and Sn-Ag solder with electroless Ni deposit during reflow

The interfaces between electroless Ni-P deposit and Pb-Sn solder and Sn-Ag solder were formed by reflowing for different time periods to examine their microstructures and microchemistry. It was found that the Pb-Sn solder interface is more stable than the Sn-Ag solder interface. Sn-Ag solder reacts quickly with the electroless Ni-P deposit and forms nonadherent Ni-Sn intermetallic compounds (IMCs). Pb-Sn solder reacts slowly and forms adherent Ni-Sn IMC. A P-rich Ni layer, revealed as a dark layer under scanning electron microscopy (SEM), is formed on the electroless Ni-P deposit due to the solder reaction. For short reflow times, this P-rich Ni layer consists of only Ni₃P compound, but during prolonged reflow, new crystals of Ni₂P, Ni₅P₄, and NiP₂ are also found to be formed from the amorphous electroless Ni-P layer.     

Microstructures in solder joints between Sn95.5Ag4Cu0.5 solder and Ag/Pd thick film

A joint between Sn95.5Ag4Cu0.5 (mass%) solder and an Ag/Pd thick film was soldered by dipping at 260°C for 3–30 sec. Shrinkage voids and Sn grain growth were characterized as well as their transformation kinetics. Void shrinkage occurred in the zone near the top surface of the joint. Shrinkage was always accompanied by colonies of ternary/quaternary meta-eutectic that were the regions solidified last in the joint. The Sn grains accumulated into two bands across the joint during solidification: one was transverse through the thickness and the other was parallel to the solder pad.     

Sn-0.3Ag-0.7Cu-xBi低银无铅钎料的润湿性

以Bi为添加剂对低银型Sn-0.3Ag-0.7Cu无铅钎料进行改性,应用SAT—5100型润湿平衡仪对Sn-0.3Ag-0.7Cu-xBi(x=0,1,3和4.5)钎料的润湿性能作了对比分析。结果表明:适量Bi元素的加入可以改善Sn-0.3Ag-0.7Cu钎料合金的润湿性能,且在240℃下Sn-0.3Ag-0.7Cu-3.0Bi无铅钎料具有最佳的润湿性能,在250℃其润湿力达到最大值3.2×10–3N/cm。     

Microstructural evolution in the Sn-Cu-Ni and Pb-Sn solder joints with Cu and Pt-Ag metallized Al2O3 substrate

The growth mechanism of intermetallics between solders and metallized substrates, after thermal aging, are investigated. The solders used in this study are unleaded Sn-Cu-Ni solder and eutectic Pb-Sn solder. The Pt-Ag/Al₂O₃, Cu block and the electroless Cu/Pt-Ag/Al₂O₃ are employed as the metallized substrates. Microstructure evolution of the interfacial morphology, elemental, and phase distribution are probed with the aid of electron-probe microanalyzer (EPMA) and x-ray diffractometry. Two kinds of intermetallics, Cu₃Sn and Cu₆Sn₅, are formed at the solder/Cu interface. However, for the solder/Pt-Ag system, only Ag₃Sn is observed at the interface. The thickness of Cu₃Sn, Cu₆Sn₅, and Ag₃Sn compound layers for all solder/metallized substrate systems shows at t^0.5 dependence at 100, 125, 150 and 170 C. According to the calculated activation energy and diffusion constant, the growth rate of Cu₃Sn and Cu₆Sn₅ intermetallics in the electroless Cumetallized substrate is relatively higher than that for Cu block one at the range of 100 C to 170 C. However, the growth rate of Cu₆Sn₅ and Ag₃Sn is reduced in the Sn-Cu-Ni solder with respect to the eutectic Pb-Sn solder. On the other hand, the Sn-Cu-Ni solder system exhibits a thicker Cu₃Sn intermetallic layer than the eutectic Pb-Sn solder after various aging times at 100 C. The thickness of Cu3Sn in the eutectic Pb-Sn solder is, however, thicker than that for Sn-Cu-Ni solder at 170 C.     

Fluxless wetting propeities of one-side-coated under bump metallurgy and top surface metallurgy

The wetting balance test was performed in an attempt to estimate the fluxless wetting properties of under bump metallurgy (UBM)-coated Si-wafer and top surface metallurgy (TSM)-coated glass substrate to SnPb solder. The wetting curves of the single-and double-side-coated UBM had a similar shape and the parameters characterizing the curve shape showed a similar tendency as a function of temperature. Wetting property estimation was possible with the new wettability indices from the wetting curves of one side-coated specimens; F_min, F_s, and t_s. Au/Cu/Cr UBM was better than Au/Ni/Ti UBM from the point of wetting time. For TSM, it was more effective to use Cu as a wetting layer with Au as a protection layer than to use Au as a wetting layer alone. The contact angle of one-side-coated Si-plate to SnPb solder can be calculated from the force balance equation by measuring static state force and tilt angle. The contact angles of Au/Cu/Cr and Au/Ni/Ti UBM of Si-wafer to SnPb solder were 59.9° and 63.9°, respectively. The contact angles of Au/Cu/Cr and Au/Cr TSM of glass to SnPb were 78.9 and 76.1°, respectively.     

Experimental Wettability Study of Lead-Free Solder on Cu Substrates Using Varying Flux and Temperature

The selection of soldering flux plays a critical role in promoting wetting and product reliability of printed circuit board assemblies. In this study, the effects of fluxes on the wetting characteristics of the Sn-3.0Ag-0.5Cu solder alloy on Cu substrates was researched by using various flux systems at different soldering temperatures. Because of the distinct characteristic of the lead-free solder—poor wettability—three kinds of fluxes [no-clean flux with high solid content (NCF), rosin mildly activated flux (RMA) and water-soluble flux (WSF)] were chosen for the wetting experiments. The wetting time and force were the evaluating indicators. The experimental observations indicated that the wettability clearly depended on the soldering temperature and flux system when using the same solder. Furthermore, the corrosion potential of flux residues was measured by surface insulation resistance (SIR) testing. Scanning electron microscope (SEM) and energy-dispersive X-ray spectroscopy (EDS) were used to determine the contents of the flux residues and corrosion products.     

Properties of Sn3.8Ag0.7Cu Solder Alloy with Trace Rare Earth Element Y Additions

In the current research, trace rare earth (RE) element Y was incorporated into a promising lead-free solder, Sn3.8Ag0.7Cu, in an effort to improve the comprehensive properties of Sn3.8Ag0.7Cu solder. The range of Y content in Sn3.8Ag0.7Cu solder alloys varied from 0 wt.% to 1.0 wt.%. As an illustration of the advantage of Y doping, the melting temperature, wettability, mechanical properties, and microstructures of Sn3.8Ag0.7CuY solder were studied. Trace Y additions had little influence on the melting behavior, but the solder showed better wettability and mechanical properties, as well as finer microstructures, than found in Y-free Sn3.8Ag0.7Cu solder. The Sn3.8Ag0.7Cu0.15Y solder alloy exhibited the best comprehensive properties compared to other solders with different Y content. Furthermore, interfacial and microstructural studies were conducted on Sn3.8Ag0.7Cu0.15Y solder alloys, and notable changes in microstructure were found compared to the Y-free alloy. The thickness of an intermetallic compound layer (IML) was decreased during soldering, and the growth of the IML was suppressed during aging. At the same time, the growth of intermetallic compounds (IMCs) inside the solder was reduced. In particular, some bigger IMC plates were replaced by fine, granular IMCs.