MR数据分析在WCDMA邻区优化中的应用

基于事件上报的MR（Measurement Report）数据为邻区优化提供完整有效的数据支撑,文章采用华为NASTAR分析软件提取MR数据中1A或1C事件,结合历史DT（DRIVER TEST）数据和物理拓扑结构,集中处理邻区多配漏配问题,完善邻区关系,提升网络质量。     

EVDO网络C/I优良比提升策略研究

研究CDMA网络中C/I优良比快速提升方法,通过网络场景关联性分析,提出质差C/I区域定位分析法,提出了Pnscanner开展精准RF优化策略、双载连片区域邻区跨频不互配策略和载波隔频连片扩容策略3种C/I优良比优化方法。通过典型案例验证优化策略能够实现有效快速提升用户感知。     

GSM的MR数据在无线优化中的应用

通过分析GSM无线信号测量报告（MR）的数据，获得反映基站间相关度的干扰矩阵（IM），并通过对MR数据在邻区和频率优化中实际应用的研究，探索出了一种利用MR数据的全新优化手段。     

MR在邻区优化中的应用

文中主要阐述了MR分析在邻区优化中的应用,在测量全面性、邻区准确性、切换及时性等方面与传统的邻区优化方法进行对比,总结出一套邻区优化的方法。同时结合现网的案例,介绍了基于MR邻区优化的实际应用效果,有着重要的现实意义。     

多区蜂窝CDMA系统上行链路的区内C/I平衡技术

本文采用两种区内C/I平衡技术来控制多区蜂窝CDMA系统上行链路中移动台的发射功率,用以补偿阴影和路径损失的影响;采用与传统不同的小区平均中断概率(Outage probability)来评价它们的性能。     

TD MR排查2G/3G网络问题的方法研究

2G/3G网络存在的问题会导致互操作异常,为解决这些问题,通过采集TD-SCDMA网络MR,利用MR确定存在问题小区,并在全网推广,解决GSM网弱覆盖,邻区配置不合理,互操作参数过于保守等问题,提升TDSCDMA网络用户感知,提高自主发现网络问题的能力。     

MR二维统计图用于LTE覆盖状态的研究

为了直观、全面、科学地描述小区综合覆盖状态,提出了一种基于终端上报的测量报告(MR)的二维统计图,通过对MR中会携带的主服务小区接收电平(RSRP)样本信息进行分析,得到其当前下行覆盖状况,对MR中会携带的邻区RSRP样本信息进行分析,得到其周边邻区信号强弱,再根据邻区间不同的切换策略划分区间,能够发现小区弱覆盖、重叠覆盖、邻区漏配等一系列覆盖问题,以便开展相应的网络优化措施。提出的MR二维统计分布图为现网LTE网络结构优化提供了一种工具。     

基于信道化架构的宽带I/Q不平衡校准技术

零中频接收机凭借其架构简单、易于集成等特点已被广泛应用于通信系统和雷达系统,为未来雷达通信一体化技术发展奠定了基础。然而,零中频接收机存在I/Q不平衡问题,这不仅会造成通信星座图的偏移,还会引入雷达虚假目标。现有宽带I/Q补偿方法的精度不高,且都集中于后处理,无法做到实时。因此,本文首先建立了宽带I/Q不平衡模型,并提出了一种融合信道化架构和盲估计补偿算法的宽带I/Q失衡校准技术。该技术利用信道化架构将宽带信号划分为窄带信号,并利用盲估计算法对带有镜像信号的子信道进行在线补偿。实验表明,该方法在获得高精度补偿参数的同时,完成了对宽带I/Q失衡的实时补偿。镜像抑制比达到55 dB。     

TD网络智能优化提高网络优化效率和质量

一个网络的优化需要借助智能的、系统化的工具。中兴通讯推出了独创的网优工具：全网自动邻区优化,NES网络硬仿真系统,MR／CDT工具。下面分别予以介绍： （1）全网自动邻区优化 中兴开发了全网邻区优化的功能：通过规划尽量多的邻区,把候选的邻区动态导入到前台,通过轮循机制,实现到邻区的配置,这样终端就能够实现对这一部分邻区的测量。     

射频功放单元ADEF线性化技术的理论分析及模型仿真

本文从调制的角度，对由调幅-调幅转换、调幅-调相转换产生射频功放单元互调干拓的机理进行了分析，推导了调幅-调幅转换系数与信号对三阶互调干扰抑制比（C/I3）的函数关系式。并在这个理论基础上，采用ADEF，即自适应双包络反馈线性化技术对射频功放单元的非线性特性进行补偿。最后，建立了自适应双包络反馈线性电路的模型并进行了仿真，结果表明，由于此种技术的采用，C/I3的值达到了60dB左右。     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Nanoimprint Lithography -A Next Generation High Volume Lithography Technique

IntroductionNanoimprint Lithography is a well-acknowl-edged low cost, high resolution, large area pattern-ing process. It includes the most promising methods,high-pressure hot embossing lithography (HEL) [2],UV-cured imprinting (UV-NIL) [3] and micro contactprinting (m-CP, MCP) [4]. Curing of the imprintedstructures is either done by subsequent UV-lightexposure in the case of UV-NIL or by cooling downbelow the glass transition temperature of the ther-moplastic material in case of HEL…     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

Influence of PVK ： NPB hole transporting layer on the characteristics of organic light-emitting devices

A doping system consisting of NPB and PVK is employed as a composite hole transporting layer （CHTL）. By adjusting the component ratio of the doping system, a series of devices with different concentration proportion of PVK ： NPB are constracted. The result shows that doping concentration of NPB enhances the competence of hole transporting ability, and modifies the recombination region of charge as well as affects the surface morphology of doped film. Optimum device with a maximum brightness of 7852 cd/m^2 and a power efficiency of 1.75 lm/W has been obtained by choosing a concentration proportion of PVK ： NPB at 1：3.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.     

Analysis of error performance on Turbo coded FDPIM

Due to variable symbol length of digital pulse interval modulation（DPIM）, it is difficult to analyze the error performances of Turbo coded DPIM. To solve this problem, a fixed-length digital pulse interval modulation（FDPIM） method is provided. The FDPIM modulation structure is introduced. The packet error rates of uncoded FDPIM are analyzed and compared with that of DPIM. Bit error rates of Turbo coded FDPIM are simulated based on three kinds of analytical models under weak turbulence channel. The results show that packet error rate of uncoded FDPIM is inferior to that of uncoded DPIM. However, FDPIM is easy to be implemented and easy to be combined, with Turbo code for soft-decision because of its fixed length. Besides, the introduction of Turbo code in this modulation can decrease the average power about 10 dBm, which means that it can improve the error performance of the system effectively.     

A method for calculating the center position of collimated light

It is a key problem to accurately calculate beam spots＇ center of measuring the warp by using a collimated laser. A new method, named double geometrical center method （DGCM）, is put forward for the first time. In this method, a plane wave perpendicularly irradiates an aperture stop, and a charge couple device （CCD） is employed to receive the diffraction-beam spots, then the geometrical centers of the fast and the second diffraction-beam spots are calculated respectively, and their mean value is regarded as the center of datum beam. In face of such adverse instances as laser intension distributing defectively, part of the image being saturated, this method can still work well. What＇s more, this method can detect whether an unacceptable error exits in the courses of image receiving, processing and calculating. The experimental results indicate the precision of this method is high.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.