A template-free alcoholthermal route to Ti(Sn)-doped ZnO nanorods

Ti(Sn)-doped single-crystalline ZnO nanorods with an average diameter of 20 nm and length up to nearly 1 μm were synthesized by a facile ultrasonic irradiation-assisted alcoholthermal method without involving any templates. Photoluminescence spectra of the Ti-doped ZnO nanorods were measured at room temperature and three emitting bands, being a violet emission at 400-415 nm, a blue band at 450-470 nm and a green band at around 550 nm, were detected. The emission intensities of the Ti-doped ZnO nanorods enhance gradually with increasing the doping concentrations. As to the Sn-doped ZnO nanorods, the green emission shifts to 540 nm and the emission intensities increase first but decrease later with increasing the doping concentrations.     

Growth and photoluminescence of (00l)-oriented RMoO4 films by chemical solution deposition

RMoO₄ (RMO, R = Ca, Sr, Ba) films were fabricated on LaAlO₃ (LAO) substrates using chemical solution deposition method. The derived RMO films are highly (00l)-orientated with good crystallization. The photoluminescence (PL) emission spectra show that the CaMoO₄ (CMO) and SrMoO₄ (SMO) films have an intrinsic broad green emission band centered at 500 nm whereas BaMoO₄ (BMO) film has a broad orange emission band resulting from the PL of molybdate group with an oxygen ion deficiency. The highly (00l)-oriented CMO film on LAO has better PL property than that of CMO film on Si substrate, which is ascribed to higher crystalline integrity and lower light scattering.     

Cathodoluminescence and its mapping of flower-like ZnO, ZnO/ZnS core-shell and tube-like ZnS nanostructures

The cathodoluminescence (CL) properties including intensity and distribution of the band to band and defect emission of the flower-like ZnO, ZnO/ZnS core-shell and tube-like ZnS nanostructures have been investigated. It is indicated that the Ultraviolet (UV) emission at 380 nm of the flower-like ZnO nanostructures due to the band to band emission is weaker than their yellow emission at 600 nm induced by interstitial oxygen. Moreover, the UV emission of the ZnO nanorods unevenly distributes from the tip to the end. The UV emission on the tip is stronger than that of others due to the waveguide. On the contrary, the yellow emission at 600 nm is uniform. Furthermore, the UV emission of ZnO has been greatly enhanced and the yellow emission has been inhibited by the formation of ZnO/ZnS core-shell nanostructures in the sulfuration process due to the elimination of interstitial oxygen. However, the polycrystalline tube-like ZnS nanostructures shows the uniform and weak defect emission due to S vacancies.     

Optical and structural characteristics of ZnO thin films grown by rf magnetron sputtering

Nanostructured ZnO thin films on Pyrex glass substrates were deposited by rf magnetron sputtering at different substrate temperatures. Structural features and surface morphology were studied by X-ray diffraction and atomic force microscopy analyses. Films were found to be transparent in the visible range above 400 nm, having transparency above 90%. Sharp ultraviolet absorption edges around 370 nm were used to extract the optical band gap for samples of different particle sizes. Optical band gap energy for the films varied from 3.24 to 3.32 eV and the electronic transition was of the direct in nature. A correlation of the band gap of nanocrystalline ZnO films with particle size and strain was discussed. Photoluminescence emission in UV range, which is due to near band edge emission is more intense in comparison with the green band emission (due to defect state) was observed in all samples, indicating a good optical quality of the deposited films.     

Rapid preparation, characterization, and photoluminescence of ZnO films by a novel chemical method

A novel and simple chemical route was developed for the deposition of ZnO film from aqueous solution, integrating the merits of successive ionic layer adsorption and reaction and chemical bath deposition. ZnO thin films on glass and Si(1 0 0) substrates were deposited with the precursor of zinc-ammonia complex. As-deposited ZnO film exhibits good crystallinity with the hexagonal wurtzite crystalline structure and the preferential orientation along (0 0 2) plane. With a dense and continuous appearance, the film is composed of ZnO particles in even size of 200-300 nm. Under the excitation of 340 nm, strong and sharp near band gap emission (∼391 nm) dominates the photoluminescence spectra with several weak emission peaks related to the deep level (∼450-500 nm). In addition, the mechanism for the deposition process of ZnO from aqueous solution was preliminarily discussed.     

Ion-induced secondary electron emission from MgO and Y2O3 thin films

We report a detailed study of the electron emission from MgO and Y₂O₃ induced by the impact of 0.1-1 keV Ar⁺ ions. The mechanisms of ion-induced secondary electron emission from oxides are far less understood because charging of the target surface during ion irradiation prohibits the precise measurement of electron yield. For this study, targets were prepared by depositing 20 nm thick films of MgO and Y₂O₃ on the semi-conducting SnO₂ substrate, which helps in charge neutralization. Additionally, a pulsed ion beam was used to further reduce the surface charging. It was found that the electron yield of both targets increases with energy of the ion. However, at a given ion energy the electron yield of Y₂O₃ was larger than MgO. Another important result of this study is that the electron emission from these large band gap insulators did not show any threshold effect, in contrast to the metal targets. It may be due to local reduction of the band gap through electron promotion processes. In addition, a Monte Carlo program was used to calculate the yield of secondary electrons excited by projectile ions, recoiling target atoms and electron cascades, and average escape depth of the secondary electrons emitted from the MgO and Y₂O₃ thin films.     

Surface plasmon enhanced bandgap emission of electrochemically grown ZnO nanorods using Au nanoparticles

Electrochemical deposition of ZnO nanorods having a diameter of 80-150 nm and length ~ 2 μm has been carried out. Au particles were sputtered on the ZnO nanorods for different sputtering times (from 0 to 100 s). The Photoluminescence spectra of bare ZnO nanorods showed a weak bandgap emission at around 375 nm and a broad defect-related emission band centered at ~ 596 nm. After the Au sputtering, the defect-related emission disappeared for all the samples. Moreover, the band edge emission intensity was enhanced with Au sputtering time 50 s. The enhancement factor reached a maximum value for the Au sputtering time of 50 s The enhancement in band edge emission is due to the transfer of electrons from defect states to the Au nanoparticles that cause not only an increase of resonant electron density, but also creates energetic electrons in the higher energy states. These resonant electrons can escape from the surface of the Au nanoparticles to conduction band of ZnO nanorods leading to the suppression of defect related emission intensity.     

Synthesis, characterization and optical properties of sheet-like ZnO

Sheet-like ZnO with regular hexagon shape and uniform diameter has been successfully synthesized through a two-step method without any metal catalyst. First, the sheet-like ZnO precursor was synthesized in a weak alkaline carbamide environment with stirring in a constant temperature water-bath by the homogeneous precipitation method, then sheet-like ZnO was obtained by calcining at 600 °C for 2 h. The structures and optical properties of sheet-like ZnO have been characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), photoluminescence (PL) and UV-vis-NIR spectrophotometer. The results reveal that the product is highly crystalline with hexagonal wurtzite phase and has appearance of hexagon at (0 0 0 1) plane. The HRTEM images confirm that the individual sheet-like ZnO is single crystal. The PL spectrum exhibits a narrow ultraviolet emission at 397 nm and a broad visible emission centering at 502 nm. The band gap of sheet-like ZnO is about 3.15 eV.     

Optical properties of pyrene doped polymer thin films

Thin films of pyrene in polystyrene matrix have been prepared by spin coating technique. The concentration of polystyrene is kept constant to 1 wt.% while that of pyrene dopant varied in the range 2.30×10⁻⁴-2.30×10⁻¹ wt.%. Thickness of the films was found to depend upon concentration of pyrene and varies from 90 to 782 nm. The results of X-ray diffraction analysis reveal the crystalline nature of the films. The optical properties were studied by absorption, excitation and fluorescence spectroscopy. The band gap energy of pyrene in polymer films was calculated from absorption results. A transition from monomer to excimer is observed with thickness variation of the films. The structured part of the spectrum is assigned to the monomer emission while the broad emission band is attributed to well known pyrene excimer-like emission.     

A novel broadband emission phosphor Ca2KMg2V3O12 for white light emitting diodes

A novel broadband emission phosphor Ca₂KMg₂V₃O₁₂ was first synthesized by solution combustion method. The X-ray diffraction showed that Ca₂KMg₂V₃O₁₂ phase can be obtained at 600-900 °C through combustion route. The crystal structure of this material was refined by Rietveld method using powder X-ray diffraction. It crystallizes in cubic system and belongs to space group Ia3d with z = 8, a = 0.12500 nm. The excitation band of Ca₂KMg₂V₃O₁₂ peaks at 320 nm in a region between 260 nm and 425 nm, and the emission spectrum exhibits an intense band centered at about 528 nm covering from 400 nm to 800 nm. The colour coordinates of samples prepared at different ignition temperatures are in a range of x = 0.323-0.339, y = 0.430-0.447.     

Synthesis of novel zinc oxide microphone-like microstructures

Novel microphone-like ZnO microstructures were grown at a very high density via a simple thermal evaporation process using commercially available ZnO powder in ambient air at ∼ 1050 ± 20 °C in 1 h. The unique as-grown microstructures were characterized in detail in terms of their structural and optical properties. The structural properties of the synthesized products confirmed that they were wurtzite hexagonal phase for the as-grown products. Raman-scattering spectra exhibited a strong and dominated Raman-active E₂ (high) mode at 441 cm^− 1, confirming the wurtzite hexagonal phase for the as-grown microphone-like ZnO morphologies. The cathodoluminescence (CL) spectrum shows a suppressed near band edge emission at ∼ 380 nm and strong green emission at ∼ 500 nm.     

Structure and luminescence properties of Mn-doped Zn2SiO4 prepared with extracted mesoporous silica

Zn₂SiO₄:Mn powders were prepared by solid-state reaction using extracted SBA-15 as silica source. The well crystalline willemite Zn₂SiO₄:Mn can be obtained at 800 °C, much lower than the conventional solid-state reaction temperature and lower than using the calcined SBA-15. This can be attributed to the high reactive activity of the extracted SBA-15 due to its high density silanol groups, large surface areas, and non-crystalline structure. Ultraviolet (UV) and vacuum ultraviolet (VUV) excitation spectra reveal the host lattice absorption band around 162 nm and the charge transfer transition band around 245 nm. The Zn₂SiO₄:Mn phosphor exhibits a strong green emission around 527 nm. The Zn₂SiO₄:Mn phosphor with an Mn doping concentration of 0.06, i.e., Zn_1.94Mn_0.06SiO₄, shows the highest relative emission intensity. Upon 147 nm excitation, the luminescence decay time of the green emission of Zn_1.94Mn_0.06SiO₄ around 527 nm is 8.87 ms.     

The influence of defects and impurities in polycrystalline AlN films on the violet and blue photoluminescence

The influence of defects and impurities in polycrystalline aluminum nitride films on the violet and blue photoluminescence properties was investigated. The photoluminescence spectra show a broad emission band in the range from 380 nm to 550 nm, which consists of two components of the violet band centered at 400 nm and the blue band centered at 480 nm. When the native defects reduce and the crystal quality is improved by annealing in nitrogen atmosphere, the shoulder band around 480 nm declines. The center of the violet luminescence shifts from 400 nm to about 440 nm as the oxygen content increase from 2.9 at.% to 12.3 at.%. The intensity and the center of the violet emission vary mostly linearly with the oxygen content. Combining the results of X-ray diffraction and Auger Electron Spectroscopy, the violet emission around 400 nm (3.09 eV) can be attributed to the transition from the shallow donor to the deep acceptor related to the oxygen impurity, while the blue emission around 450 nm (2.58 eV) may originate from transition from the shallow donor to the deep acceptor related to the native defect.     

Cathodoluminescence of CaWO4 and SrWO4 thin films prepared by spray pyrolysis

Thin films of CaWO₄ and SrWO₄ were prepared on glass substrates by spray pyrolysis. The effects of preparation conditions and monovalent, bivalent and trivalent cation doping on cathodoluminescence (CL) properties of the films were studied. Polycrystalline CaWO₄ and SrWO₄ films formed a scheelite structure after being annealed above 300°C. They exhibited analogous cathodoluminescence consisting of a blue emission band at 447 nm and a blue-green emission band at 487 nm. The blue and blue-green emission intensities increased with substrate and annealing temperature. Annealing atmosphere and doping with Ag⁺, Pb²⁺ and La³⁺ did not influence the characteristics of the blue and blue-green emissions, whereas Eu³⁺ did. The results indicated both the blue and blue-green emissions originated from the WO₄²⁻ molecular complex. The luminance and efficiency for CaWO₄ film were 150 cd/m² and 0.7 lm/W at 5 kV and 57 μA/cm².     

Development of a dedicated ion injector for accelerator-based nanoprobe facilities

The paper discusses possible ways of increasing beam brightness in ion injectors. The argon/helium ion injector comprising a newly designed RF ion source and, a Wien filter has been designed for use in accelerator-based nanoprobe facilities. The phase set degradation due to aberrations in the injector ion-optic system was simulated with allowance for multipole and fringing fields. The RF ion sources with different permanent magnet systems were tested. Experiments were performed with argon and helium. A plasma density of up to 3×10¹¹ cm⁻³ and beam brightness of ∼100 A/(m² rad² eV) were obtained. The ion current density inside an extracting electrode in the source was 10 mA/cm² for an emission hole diameter of 0.6 mm. Measurements of the current value and emittance were performed with ion source testing equipment permitting measurements of the ion beam current, emittance, mass composition, and RF power input into the plasma.     

Thermal evaporation and condensation synthesis of metallic Zn layered polyhedral microparticles

Metallic zinc layered polyhedral microparticles have been fabricated by thermal evaporation and condensation technique using zinc as precursor at 750 °C for 120 min and NH₃ as a carrier gas. The zinc polyhedral microparticles with oblate spherical shape are observed to be 2-9 μm in diameter along major axes and 1-7 μm in thickness along minor axes. The structural, compositional and morphological characterizations were performed by X-ray diffraction (XRD), energy dispersive X-ray spectroscopy (EDS), scanning electron microscopy (SEM), transmission electron microscopy (TEM) and selected area electron diffraction (SAED). A vapour-solid (VS) mechanism based growth model has been proposed for the formation of Zn microparticles. Room temperature photoluminescence (PL) emission spectrum of the product exhibited a strong emission band at 369 nm attributed to the radiative recombination of electrons in the s, p conduction band near Fermi surface and the holes in the d bands generated by the optical excitation.     

Substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of perovskite-structured Ba(In0.5Ta0.5−xBix)O3 semiconductors

We have investigated the substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of barium indium tantalate. X-ray diffraction, X-ray absorption spectroscopic, and energy dispersive spectroscopic microprobe analyses reveal that, under oxygen atmosphere of 1 atm, pentavalent Bi ions are successfully stabilized in the octahedral site of the perovskite tantalate lattice. According to diffuse reflectance UV-vis spectroscopic analysis, the Bi substitution gives rise to the significant narrowing of band gap of barium indium tantalate even at a low Bi content of ∼5%, underscoring a high efficiency of Bi substitution in the band gap engineering. Such an effective narrowing of the band gap upon the Bi substitution would be attributable to the lowering of conduction band position due to the high electronegativity of Bi^V substituent. As a result of band gap engineering, the Ba(In_0.5Ta_0.5−xBi_x)O₃ compounds with x ≥ 0.03 can generate photocurrents under visible light irradiation (λ > 420 nm). Based on the present experimental findings, it becomes clear that the substitution of highly electronegative p-block element like Bi^V ion can provide a very powerful tool for tailoring the electronic structure and physicochemical properties of wide band gap semiconductors.     

Photoluminescence of Eu activated YAlO3 under UV-VUV excitation

YAlO₃ and YAlO₃:Eu³⁺ powder phosphors were prepared by the citric-gel method, and the formation of purified crystalline phases of YAlO₃ and YAlO₃:Eu³⁺ was dependent on the pH value of the starting solution. The powders prepared with pH 3 yielded a single phase YAlO₃ after calcinations at 1000 °C. The spectroscopic properties in UV-vacuum ultraviolet (VUV) range for the orthorhombic structure phosphors YAlO₃:Eu³⁺ were investigated. The broad band centered at 240 nm was assigned to the charge transfer transition between Eu³⁺ and the neighboring oxygen anions. The other broad band from 120 nm to 160 nm was attributed to the host absorption, which ensures the efficient absorption of the Xe plasma emission lines. The photoluminescent spectra showed the strongest emission at 614 nm corresponding to the electric dipole ⁵D₀ → ⁷F₂ transition of Eu³⁺, which resulted in good color purity for display and lamps applications.     

Synthesis and photoluminescence properties of MgAl2O4:Mn hexagonal nanoplates

MgAl₂O₄:Mn²⁺ hexagonal nanoplates have been synthesized via a simple two-step method. The nanoplates have uniform hexagonal morphology with an average edge length of 1 μm and thickness of 30 nm. X-ray diffraction and various microscopic techniques indicate that MgAl₂O₄:Mn²⁺ nanoplates are single-crystal with multilayered morphology. The formation mechanism has also been discussed. Photoluminescence (PL) spectrum of the MgAl₂O₄:Mn²⁺ nanoplate shows a broad green emission band centered at 568 nm, which is assigned to the ⁴T₁ → ⁶A₁ transition of Mn²⁺ ion. The MgAl₂O₄:Mn²⁺ nanoplate is a promising candidate for efficient nanoscale optical material.     

Luminescent properties of Na3YSi3O9 doped with Eu under UV-VUV excitation

The luminescent properties of Na₃Y_1−xSi₃O₉:xEu³⁺ (0.05 ≦ x ≦ 0.80) powder crystals were investigated in UV-VUV region. The Eu³⁺-O²⁻ charge transfer band (CTB) was observed to be located at around 233 nm and the environmental parameter (h_e) was estimated to be about 0.730. The excitation spectrum monitoring the 613 nm red emission from Eu³⁺ ions reveals the host absorption band (HAB) to be around 145 nm. The calculated Commission Internationale de l’Eclairage (CIE) chromaticity coordinates indicate the emission by 233 nm rather than by 147 nm excitation has the better color purity and the possible mechanisms have been proposed. The Eu³⁺-emission showed high quenching concentration due to the isolated YO₆ octahedra in the host and the small h_e for the Eu³⁺ ions and the optimum concentration was determined to be as high as x = 0.65 and 0.30 with 233 and 147 nm excitation, respectively.