基于铟镓砷材料的新型太赫兹/亚毫米波探测器研究

对一种基于生长在半绝缘InP衬底上InGaAs外延材料的新型太赫兹室温探测器进行研究。首先在HFSS理论计算的基础上对器件天线阻抗、驻波比、辐射方向图等特性参数进行分析。其次,通过光刻、腐蚀、溅射、点焊等工艺制作出对称金属电极天线耦合的太赫兹探测器件。结合自己搭建的0.037 5 THz器件响应测试系统,得到铟镓砷太赫兹探测器件在不同偏置电流和不同调制频率下的器件响应曲线。结果表明器件具有明显的光电信号和快的响应速度。通过利用高莱探测器进行标定,得到器件在0.037 5 THz时的电压灵敏度优于6 V/W,器件噪声等效功率NEP优于1.610-9 W/Hz1/2,器件响应时间优于300 s。     

Bias and temperature dependence of Sb-based heterostructure millimeter-wave detectors with improved sensitivity

Nearly lattice-matched InAs/AlSb/GaSb-based heterostructure backward diodes for zero-bias millimeter wave detection were fabricated and measured. A record-high curvature, /spl gamma/=39.1 V/sup -1/, at zero bias was measured. On-wafer sensitivity measurements from 1 to 110 GHz gave a record-high average sensitivity of 3687 V/W for zero-bias operation. Further enhancement of detector sensitivity was observed with applied dc bias, with a sensitivity of 7996 V/W obtained for a 0.9 /spl mu/A bias. Extrapolating the conjugately-matched measured sensitivity suggests that 1000 V/W should be achievable at a record-high 541 GHz. The temperature dependence of detector sensitivity was evaluated from measured dc current-voltage characteristics and gave expected sensitivities ranging from 3910 V/W at 293 K to 7740 V/W at 4.2 K.     

奶粉中山梨酸钾的太赫兹光谱检测

采用太赫兹时域光谱(THz-TDS)技术测量了奶粉、山梨酸钾及其混合物在0.2?2.0 THz波段的光谱特性,得到了样品在室温氮气环境下的吸收谱和折射率谱。结果表明山梨酸钾在0.98 THz处存在明显的特征吸收峰。采用简单一元线性回归模型(SLR)对奶粉中山梨酸钾的含量进行了定量分析,结果表明吸收系数随着混合物中山梨酸钾含量的增大而增大。该研究对于食品质量安全检测具有重要意义。     

HEMT太赫兹探测器响应度和NEP的检测与分析

在0.8～1.1 THz内,对AlGaN/GaN高电子迁移率晶体管(HEMT)太赫兹探测器的响应度和噪声等效功率进行了具体测试和分析。在太赫兹波辐射下,HEMT太赫兹探测器源漏端产生能被栅压灵敏调控的直流光电流。该型探测器在300 K和77 K下的电流响应度分别为83 mA/W和4.1 A/W,电压响应度分别为4 kV/W和50 kV/W,噪声等效功率分别达到22 pW/Hz0.5和1 pW/Hz0.5。采用两种较为典型的测量方法,通过对实验结果的比较,确定了影响该类型探测器的响应度和噪声等效功率的主要因素,并提出了增强响应度和降低噪声等效功率的具体措施。     

基于肖特基势垒二极管的太赫兹固态倍频源和检测器研制

本文基于GaAs肖特基势垒二极管以及混合集成电路工艺,对太赫兹固态倍频和检测技术开展了研究.文章结合肖特基势垒二极管物理结构,采用电磁场仿真软件和电路仿真软件相结合的综合分析方法,对各模块电路进行优化设计,研制出了高倍频效率的倍频源和高灵敏度的检测器(检波器和谐波混频器).0.15THz检波器测得最高检波电压灵敏度1600mV/mW,在0.11~0.17THz灵敏度典型值为600mV/mW,切线灵敏度优于-29dBm.0.15THz二倍频器测得最高倍频效率7.5%,在0.1474~0.152THz效率典型值为6.0%.0.18THz二倍频器测得最高倍频效率14.8%,在0.15~0.2THz效率典型值为8.0%.0.15THz谐波混频器测得最低变频损耗10.7dB,在0.135~0.165THz变频损耗典型值为12.5dB.0.18THz谐波混频器测得最低变频损耗5.8dB,在0.165~0.2THz变频损耗典型值为13.5dB,在0.21~0.24THz变频损耗典型值为11.5dB.     

A low-power wide dynamic range envelope detector

We report a 75-dB 2.8-/spl mu/W 100-Hz-10-kHz envelope detector in a 1.5-/spl mu/m 2.8-V CMOS technology. The envelope detector performs input dc insensitive voltage-to-current converting rectification followed by novel nanopower current-mode peak detection. The use of a subthreshold wide linear range transconductor allows greater than 1.7-V/sub pp/ input voltage swings. We show theoretically that the optimal performance of this circuit is technology independent for the given topology and may be improved only by spending more power due to thermal noise rectification limits. A novel circuit topology is used to perform 140-nW peak detection with controllable attack and release time constants. We demonstrate good agreement of experimentally measured results with theory. The envelope detector is useful in low-power bionic implants for the deaf, hearing aids, and speech-recognition front-ends.     

p-GaAs同质结太赫兹探测器的优化与性能

从提高p-GaAs同质结太赫兹探测器量子效率出发,在考虑温度和偏压等参数的影响后,优化了谐振腔增强的p-GaAs同质结太赫兹探测器的材料及结构参数,使探测器的量子效率提高到了17%.并计算了探测器的响应率、探测率和偏压、温度、光谱频率的关系,得到了最佳工作偏压(10~40 m V)、最佳工作温度(8 K)和最大探测率(4.1×1010cm Hz1/2/W).而通过施加一对匹配的反射镜来构造谐振腔的设计,所能获得的极限量子效率为26%,极限探测率和响应率分别为5.7×1010cm Hz1/2/W、25.9 A/W.     

中波-长波双色量子阱红外探测器

采用n型掺杂的AlGaAs/GaAs和AlGaAs/InGaA多量子阱材料,基于MOCVD外延生长技术,利用成熟的GaAs集成电路加工工艺,设计并制作了不同结构的中波-长波双色量子阱红外探测器(QWIP)器件,器件采用正面入射二维光栅耦合,光栅周期设计为4μm,宽度2μm;对制作的500μm×500μm大面积双色QWIP单元器件暗电流、响应光谱、探测率进行了测试和分析。在-3V偏压、77K温度和300K背景温度下长波(LWIR)和中波(MWIR)QWIP的暗电流密度分别为0.6、0.02mA/cm2;-3V偏压、80K温度下MWIR和LWIR QWIP的响应光谱峰值波长分别为5.2、7.8μm;在2V偏压、65K温度下,LWIR和MWIR QWIP的峰值探测率分别为1.4×1011、6×1010cm.Hz1/2/W。     

WIDE RANGE DETECTOR USING PARABOLIC CYLINDRICAL MIRROR FOR THz APPLICATIONS

A new, wide-band, high-speed and high-sensitivity THz detector has been developed. The prototype detector consists of a parabolic cylindrical mirror, a long wire antenna and a Schottky barrier diode. Direct detection measurements have shown a stable sensitivity of 150 ± 50 V/W for 1–2 THz without any adjustments. The long wire antenna was fixed at the focus of parabolic cylindrical mirror then it has been realized less operation steps, easy coupling to the external THz signals and a dramatic enhancement in the practicality of this system. The optically polished mirror and frosted surface one showed comparable sensitivities, thus easy polishing and less cost mirror fabrication can be applied for this system. The radiation pattern showed a maximum radiation angle of approximately 23° with its dominant main lobe, which was attributed to the wire antenna character and confirmed good agreements with classical antenna theory.     

A Readout Channel Optimized for Minimum NEP of a FET-Based THz Pixel

This paper presents a high-gain, noise-efficient readout interface for a FET-based direct THz detector fabricated in 0.15 μm standard CMOS technology. The pixel, conceived to be used in array configuration for an imaging application, consists of an on-chip antenna, a FET device for THz signal detection and a chopper-stabilized readout interface performing in-pixel filtering and amplification. The switched-capacitor multistage design achieves a closed-loop gain of 70 dB and a system bandwidth of 1 kHz, thereby improving the SNR and limiting the total integrated input referred noise of the channel to less than the minimum detectable signal limit defined by the FET detector. The measurement results show that the pixel is able to achieve a maximum voltage responsivity of 470 kV/W and a minimum NEP value of 480 pW/√Hz at the antenna frequency of 370 GHz. The pixel consumes 200 μW power, and it occupies an area of 0.375mm².     

Novel detectors for traceable THz power measurements

Several novel types of detectors for the measurement of electromagnetic radiation in the THz spectral range are described. Firstly, detectors based on pyroelectric foil coated with different absorbers have been developed focusing on the following features: high accuracy due to well-characterized absorption, high sensitivity, large area absorbers and frequency and polarization independence. A three-dimensional design with five absorptions gave an overall absorption of more than 98 %. Secondly, detectors based on pyroelectric foils with thin metal layers were realized. An absorption of 50 % can be obtained if the thickness of the layers is carefully adjusted. According to electromagnetic theory this degree of absorption is independent of the polarization and frequency of the radiation in a wide range from at least 20 GHz to 5 THz. The third type of detector is based on a new type of volume absorber with a polished front surface and a gold-coated back side. It is the absorber of choice of the standard power detector for disseminating the spectral power responsivity scale. This standard detector allows the application of a physical model to calculate its spectral responsivity in the range from 1 THz to 5 THz if the detector has been calibrated at one single frequency. Finally, a THz detector calibration facility was set up and is now in operation at PTB to calibrate detectors from customers with an uncertainty as low as 1.7 %.     

Terahertz Multivariate Spectral Analysis and Molecular Dynamics Simulations of Three Pyrethroid Pesticides

The terahertz (THz) multivariate spectral characteristics and the molecular dynamics of three pyrethroid pesticides, including deltamethrin, fenvalerate, and beta-cypermethrin, were studied in this paper. THz spectra of the pesticides were measured in frequency range of 0.06–3.5 THz by using THz time-domain spectroscopy (THz-TDS). To improve the THz spectral quality, the wavelet threshold de-noising (WTD) method was used to remove spectral noise and the spectral baseline correction (SBC) method was used to remove baseline drift. Specific absorption peaks were observed in the processed THz spectra of the three pesticides. Deltamethrin showed three peaks at 0.90, 1.49, and 2.32 THz. Fenvalerate had five peaks at 1.13, 1.43, 1.61, 1.98, and 2.58 THz. Beta cypermethrin had four peaks at 1.27, 1.84, 2.12, and 2.92 THz. The density functional theory (DFT) was used to characterize the molecular dynamics and formation mechanism of the absorption peaks. Results showed that there was a good matching effect between the THz experimental spectra and the DFT quantum calculation spectra. Based on the characterized fingerprint absorption peaks, the linear addition model was used to simulate the THz spectra of mixed pesticides. The simulated spectra of multicomponent pesticides were demonstrated to be in good agreement with those obtained by THz-TDS. By analyzing the absorption peaks of THz spectra, the composition and concentration of multicomponent pesticides could be determined. The proposed strategy presented an analytical methodology for studying the THz spectral characteristics of pesticides. In addition, this work provided experimental and theoretical basis for the detection potential of pesticides in agricultural products based on THz technology.     

Pulsed resistance bridge for studies of semiconductor contacts

A pulsed (∼3-5 µs pulse width; 30-200 Hz repetition rate) resistance bridge that graphically displays the resistance voltage characteristics of semiconductor samples is described. Using this instrument it is possible to detect changes in the resistanceDelta Rof the semiconductor sample of approximately 0.1 percent. With this sensitivity one can determine the quality of the contacts that are applied to the semiconductor. We illustrate the operation of the pulsed bridge, including a comparison between "good" (ohmic) and "poor" (nonohmic) contacts, by using indium antimonide at 77°K as the semiconductor.     

Exploration of Terahertz Imaging with Silicon MOSFETs

We summarize three lines of development and investigation of foundry-processed patch-antenna-coupled Si MOSFETs as detectors of THz radiation: (i) Exploiting the pinciple of plasma-waved-based mixing in the two-dimensional electron gas of the transistors’ channels, we demonstrate efficient detection at frequencies as high as 9 THz, much above the transit-time-limited cut-off frequencies of the devices (tens of GHz). Real-time imaging at 600 GHz with a 12 × 12 detector array is explored. (ii) Given the limited THz power usually available for applications, we explore imaging with enhanced sensitivity in heterodyne mode. We show that real-time operation of a 100 × 100-pixel heterodyne camera should be possible at 600 GHz with a better dynamic range (30 dB) than for direct power detection (20 dB), even if only a quarter-milliwatt of local-oscillator power, distributed radiatively over all detector pixels, is available. (iii) Finally, we present an all-electronic raster-scan imaging system for 220 GHz entirely based on CMOS devices, combining the CMOS detectors with an emitter circuit implemented in a 90-nm CMOS process and delivering radiation with a power on the 100- μW scale. Considering progress in the field, we anticipate that the emitter concept of oscillator-based power generation with on-chip frequency multiplication will carry well into the sub-millimeter-wave regime.     

1 532 nm全光纤Er/Yb共掺杂激光器

近年来,相干探测激光雷达是测量远距离低空风切变的有效手段,1.6 μm波段固体激光器以其人眼安全、探测器件成熟等优势成为相干雷达主要光源。其增益介质Er:YAG晶体在1532 nm波段有较强的吸收峰,但吸收谱较窄,因此通过使用1 532 nm光纤激光器进行谐振泵浦可以有效提高晶体输出效率。为此,文中以Er/Yb双包层光纤为增益介质,1532 nm光纤光栅为反射腔镜,976 nm半导体激光器为泵浦源,实现了全光纤化1532 nm激光输出。输出激光最大功率73.44 W,波长可调谐范围为1531.35~1532.14 nm,波长谱宽为0.06 nm,x和y方向的光束质量M2分别为1.38和1.26,是1.6 μm固体激光器的理想泵浦源。并采用此激光器泵浦Er:YAG非平面环形腔获得1.3 W单频激光输出,斜率效率为31.76%。     

Detection of terahertz radiation with diode lasers

A standard commercial semiconductor is shown to be able to detect terahertz (THz) radiation at room temperature. A voltage variation across the active region of the device upon incident THz radiation is measured. The detected voltage signal scales linearly with the THz intensity measured with a Golay cell. A detailed analysis shows that thermal effects following the THz absorption by the carrier plasma play an important role in this detection process.     

Field Effect Transistors for Terahertz Detection: Physics and First Imaging Applications

Resonant frequencies of the two-dimensional plasma in FETs increase with the reduction of the channel dimensions and can reach the THz range for sub-micron gate lengths. Nonlinear properties of the electron plasma in the transistor channel can be used for the detection and mixing of THz frequencies. At cryogenic temperatures resonant and gate voltage tunable detection related to plasma waves resonances is observed. At room temperature, when plasma oscillations are overdamped, the FET can operate as an efficient broadband THz detector. We present the main theoretical and experimental results on THz detection by FETs in the context of their possible application for THz imaging.     

HEMT with nonalloyed ohmic contacts using n+-InGaAs cap layer

We have investigated nonalloyed ohmic contacts on HEMT's using a highly conductive n⁺-InGaAs layer. The minimum specific contact resistance obtained was 4.8 × 10^-7Ω.cm², and the IV characteristics were equal to or better than those of conventional HEMT's with alloyed ohmic contacts. The maximum transconductances of a nonalloyed ohmic HEMT were 240 mS/mm at 300K and 340 mS/mm at 88K for a gate length of 1.1 µm. We conclude that it is not necessary for HEMT's with two-dimensional electron gas (2DEG) channels to have alloyed ohmic contacts, because the tunneling conduction is significant at the n-GaAs/n-AlGaAs/undoped GaAs double heterojunction.     

Temperature Dependence of High Frequency and Noise Performance of Sb-Heterostructure Millimeter-Wave Detectors

The temperature dependence of the microwave and noise performance of zero-bias Sb-heterostructure backward diodes for millimeter-wave detection have been investigated experimentally. Both the junction capacitance and junction resistance were found to decrease with decreasing temperature, while the intrinsic cutoff frequency and sensitivity are observed to increase as the temperature is lowered. A simple physical model that captures these effects is described. The directly measured voltage sensitivity at 50 GHz for a 2times2 mum ² device increased from 3650 V/W at room temperature to 7190 V/W at 4.2 K. The measured noise equivalent power (NEP) decreased from 4.2 to 0.2 pW/Hz^1/2 as the temperature was lowered from 298 K to 4.2 K when driven from a 50- Omega source. Based on the measured RF sensitivity, S-parameters, and noise spectrum, a NEP of 0.3 pW/Hz^1/2 is projected for room-temperature operation at zero bias using a conjugately matched RF source     

蝶形天线增强的HEMT室温太赫兹探测器

介绍了一种基于GaN/AlGaN高电子迁移率晶体管(HEMT)的高速、高灵敏度室温太赫兹探测器。在太赫兹波辐射下,HEMT源漏端产生直流光电流,并能被栅压灵敏地调控。探测器中新颖的蝶形天线设计使接收到的太赫兹电场得到显著增强,提高了探测器的响应度。通过测量探测器对不同偏振方向的太赫兹光的响应,有效验证了蝶形天线对太赫兹电场的增强作用。室温下,探测器的等效噪声功率约为5×10-10W/Hz21,平均响应度达42mA/W。实验结果表明,光电流的产生与二维电子气沟道的场效应特性和入射太赫兹波电场在电子沟道中的分布密切相关。自混频理论能很好地描述实验结果。