All-chemically deposited Bi2S3/PbS solar cells

We report on solar cells with a cross-sectional layout: TCO/window/Bi₂S₃/PbS, in which a commercial SnO₂ transparent conductive oxide (TCO-PPG Sungate 500); chemically deposited window layers of CdS, ZnS or their oxides; n-type Bi₂S₃ (100 nm) and p-type PbS (360-550 nm) absorber films constitute the cell structures. The crystalline structure, optical, and electrical properties of the constituent films are presented. The open circuit voltage (V_oc) and short-circuit current density (J_sc), for 1000 W/m² solar radiation, of these solar cells depend on the window layers, and vary in the range, 130-310 mV and 0.5-5 mA/cm², respectively. The typical fill factors (FF) of these cells are 0.25-0.42, and conversion efficiency, 0.1-0.4%.     

A very simple and low cost route to Bi2S3 nanorods bundles and dandelion-like nanostructures

Bi₂S₃ nanorods bundles as well as three-dimensional dandelion-like nanostructures were synthesized in high yield at lower temperature (room temperature or ambient temperature of 15 °C) in a very simple system composed only of Bi(NO₃)₃, thioacetamide (TAA), hydrochloride acid and distilled water. It is the first report to obtain such nanostructures at such a low temperature and by such a simple method, and the reaction does not demand any additional energy such as heating or agitation. A splitting crystal growth and self-assemble mechanism should be responsible for the formation of these structures. This kind of novel Bi₂S₃ nanostructures may find potential applications in hydrogen storage, high-energy batteries, as well as luminescence and catalysis fields.     

Effect of complexing agent on growth process and properties of nanostructured Bi2S3 thin films deposited by chemical bath deposition method

Nanostructured Bi₂S₃ thin films have been prepared onto amorphous glass substrates by chemical bath deposition method at room temperature using bismuth nitrate and sodium thiosulphate as cationic and anionic precursors with EDTA as complexing agent in aqueous medium. The X-ray diffraction study reveals that the films deposited without the complexing agent are amorphous in nature and becomes nanocrystalline in the presence of EDTA. The resistivity for the films prepared from EDTA complexed bath is decreased due to the improvement in grain structure. The decrease in optical bandgap and activation energy is observed as the thickness of the film varies from 45 to 211 nm on account of the variation of the volume of complexing agent in reaction bath. Studies reveal that the growth mechanism of Bi₂S₃ gets affected in the presence of complexing agent EDTA and shows impact on structural, electrical and optical properties.     

Preparation and visible-light photocatalytic activity of In2S3/TiO2 composite

A novel In₂S₃/TiO₂ composite with visible-light photocatalytic activity was prepared by a chemical precipitation method and characterized by X-ray diffraction (XRD), transmission electron microscope (TEM), scanning electron microscope and UV–vis diffuse reflectance spectroscopy. Under both UV- and visible-light irradiation, the In₂S₃/TiO₂ composite shows good photocatalytic activity to degrade methyl orange, ascribed to the absorption of visible light by In₂S₃ sensitizer and enhanced separation of photoinduced electron–hole pairs in the composite semiconductors.     

Hydrothermal synthesis of single-crystalline Bi2Te3 nanoplates

Novel Bi₂Te₃ nanoplates with about 0.2-1 μm in diagonal and 100 nm in thickness have been facilely synthesized via hydrothermal routes in the presence of polyvinylpyrrolidone (PVP). Various techniques such as X-ray diffraction (XRD), scanning electron microscope (SEM), transmission electron microscope (TEM), and Fourier transform infrared spectrometry (FT-IR) have been used to characterize the obtained products. The results show that the existence of PVP is vital to the formation of the plate-like morphology. Other factors, such as the reaction temperature and the different surfactants also have influence on the morphology of the final products to some extent.     

Spray pyrolyzed β-In2S3 thin films: Effect of postdeposition annealing

Indium sulfide thin films prepared using spray pyrolysis, with In/S ratio 2/3 in the solution, were annealed in vacuum at 300 and 400 °C. The effect of this treatment on properties of the films was studied using X-ray diffraction, scanning electron microscopy, X-ray photoelectron spectroscopy, optical absorption, transmission and electrical measurements. Optical constants of the films were calculated using the envelope method. Annealing did not affect the optical properties of the film much, but the resistivity of the films showed a drastic decrease and the grain size increased. In₂S₃ thin films have potential use as buffer layer in photovoltaic heterojunction devices.     

Investigation of Cu(In,Ga)Se2/In2S3 diffuse interface by Raman scattering

The CIGSe/In₂S₃ interface is known to be highly diffuse because of the migration of Cu from the CIGSe into the In₂S₃. Most of the analytical techniques allowing the determination of composition profiles throughout this interface involve ion etching either during the samples preparation or during data acquisitions. In the present work, we have explored the potential of the Raman scattering for the characterization of such interfaces. This technique is non destructive and provides information on both the composition and the structure of the materials that are probed. Three CIGSe/In₂S₃ structures have been investigated; the parameter varying being the substrate temperature during the In₂S₃ deposition. For the first time we could demonstrate that at high temperature, the CuInS₂ Cu-Au phase is formed at the CIGSe/In₂S₃ interface. Furthermore, the thickness of the ordered defect compound at the CIGSe surface increases with the deposition temperature. All of the new knowledge collected during this work shows the relevance of using the Raman scattering technique for the characterization of the CIGSe/In₂S₃ interface.     

Preparation of rod-like Sb2S3 dendrites processed in conventional hydrothermal

Large-scale rod-like antimony sulfide (Sb₂S₃) dendrites have been prepared by hydrothermal method using antimony chloride (SbCl₃), citric acid and thioacetamide as raw materials at 160 °C for 12 h. The powder X-ray diffraction pattern shows the Sb₂S₃ crystals belong to the orthorhombic phase with calculated lattice parameters a = 1.120 nm, b = 1.128 nm and c = 0.3830 nm. The quantification of energy dispersive X-ray spectrometry analysis peaks gives an atomic ratio of 2:3 for Sb:S. Transmission electron microscopy micrograph studies reveal the appearance of the as-prepared Sb₂S₃ is dendrites-like which is composed of nanorods with the typical width of 300-500 nm and length of 5-20 µm. Finally the influences of the reaction conditions are discussed and a possible mechanism for the formation of rod-like Sb₂S₃ dendrites is proposed.     

Multiferroic properties of BiFeO3/Bi4Ti3O12 double-layered thin films fabricated by chemical solution deposition

Multiferroic BiFeO₃/Bi₄Ti₃O₁₂ (BFO/BTO) double-layered film was fabricated on a Pt(111)/Ti/SiO₂/Si(100) substrate by a chemical solution deposition method. The effect of an interfacial BTO layer on electrical and magnetic properties of BFO was investigated by comparing those of pure BFO and BTO films prepared by the same condition. The X-ray diffraction result showed that no additional phase was formed in the double-layered film, except BFO and BTO phases. The remnant polarization (2P_r) of the double-layered film capacitor was 100 μC/cm² at 250 kV/cm, which is much larger than that of the pure BFO film capacitor. The magnetization-magnetic field hysteresis loop revealed weak ferromagnetic response with remnant magnetization (2M_r) of 0.4 kA/m. The values of dielectric constant and dielectric loss of the double-layered film capacitor were 240 and 0.03 at 100 kHz, respectively. Leakage current density measured from the double-layered film capacitor was 6.1 × 10^− 7 A/cm² at 50 kV/cm, which is lower than the pure BFO and BTO film capacitors.     

BiOCl/Bi2O3异质结复合光催化剂的制备和光催化性能研究

以五水硝酸铋、硝酸、氢氧化钠、盐酸为原料,用盐酸浸渍法制备了盐酸与氧化铋物质的量比分别为0.3∶1、0.5∶1、0.7∶1、1∶1的BiOCl/Bi2O3异质结新型复合光催化剂。用X射线衍射(XRD)、热重-差热分析(TG-DSC)和扫描电子显微镜(SEM)等手段对材料进行了表征。250 W高压汞灯照射下,用光催化降解罗丹明B反应来测试催化剂的光催化活性,结果表明BiOCl/Bi2O3复合光催化剂的性能明显优于单体Bi2O3。当盐酸与氧化铋物质的量比为0.7∶1时,BiOCl/Bi2O3催化剂的光催化活性最佳。最后研究了抑制剂对BiOCl/Bi2O3复合光催化剂降解罗丹明B的影响,发现三乙醇胺和碘化钾都有一定的抑制作用。     

Synthesis of single crystal Bi2Te3 nanoplates via an inorganic-surfactant-assisted solvothermal route

Single crystal Bi₂Te₃ nanoplates have been successfully obtained by a solvothermal method adopting a lamellar structure as the precursor. Various techniques such as X-ray diffraction (XRD), field-emission scanning electron microscope (FESEM), high-resolution transmission electron microscope (HRTEM), and selected area electron diffraction (SAED) have been used to characterize the obtained products. The results show that the as-synthesized samples are rhombohedral-structured Bi₂Te₃ single-crystal nanoplates, whose growth direction is perpendicular to c-axis. In addition, some important experiment parameters such as the water/ethanol volume ratio and pH value have been discussed.     

Selective synthesis of Bi2Se3 nanostructures by solvothermal reaction

Bi₂Se₃ nanobelts, nanoflakes and sheets embedded nanotubes were prepared via solvothermal process with different solvents. The reaction conditions influencing the synthesis of Bi₂Se₃ nanostructures such as solvents, and reaction temperatures were studied and optimized. Results indicated that the mixed solvent composed of triethanolamine and ethanol (TEA-EtOH) or triethanolamine and distilled water (TEA-H₂O) can decrease the threshold temperature (TT) of Bi₂Se₃. With the solvents TEA-EtOH and TEA-H₂O, we originally accomplished the shape-controlled synthesis of Bi₂Se₃ nanocrystals by controlling reaction temperature. Based on the viewpoint of crystallography about Bi₂Se₃, the possible growth mechanisms of Bi₂Se₃ nanostructures were discussed.     

Microwave-assisted synthesis of hierarchical Bi2O3 spheres assembled from nanosheets with pore structure

Hierarchical Bi₂O₃ spheres assembled from nanosheets with nanopore structure have been successfully synthesized by thermal decomposition of the precursor at 400 °C for 3 h in air, which was prepared using Bi(NO₃)₃·5H₂O and poly(vinylpyrrolidone) (PVP) by a microwave-assisted heating method in ethylene glycol (EG) at 150 °C for 10 min. The morphology of Bi₂O₃ is similar to that of the precursor. The products were characterized by X-ray powder diffraction (XRD), Fourier transform infrared spectrometry (FT-IR), field-emission scanning electron microscopy (FE-SEM), thermogravimetric analysis (TG) and differential scanning calorimetric analysis (DSC). XRD pattern showed that the product had a high degree of crystallinity. FE-SEM micrograph indicated that hierarchical Bi₂O₃ spheres had sizes around 10 μm.     

热处理对Bi2O3-B2O3-SiO2凝胶玻璃粉体结构与性能的影响

采用溶胶-凝胶法制备了一种Bi₂O₃-B₂O₃-SiO₂系玻璃粉体,在200 ℃、400 ℃、600 ℃和800 ℃温度下分别对凝胶玻璃粉体进行热处理,借助SEM、TEM、XRD、FT-IR、Raman、XPS、DSC、热膨胀仪及“纽扣”烧结实验分别测定了经不同温度热处理后玻璃粉体的结构与性能,分析了其结构变化对玻璃粉体转变温度T_g和烧结特性的影响。结果显示,在实验温度范围内,随热处理温度升高,Bi³⁺逐渐进入玻璃网络中,[BiO₆]八面体和[BiO₃]三角体、[BO₄]四面体和[BO₃]三角体分别与[SiO₄]四面体以顶角相连的方式构建玻璃网络结构。O1s和Bi4f的电子结合能逐渐增大,B1s的电子结合能减小,玻璃网络结构稳定性增强,导致玻璃转变温度T_g及玻璃膨胀软化点温度T_d升高、 润湿性降低且热膨胀系数略有降低。经600 ℃热处理后,玻璃粉体具有较优的烧结性能,T_g、T_d分别约为485 ℃及542 ℃,热膨胀系数α约为7.067×10-6/℃。     

Bi2Te3纳米结构的制备、磁性掺杂和结构表征

通过液相法制备Bi2Te3纳米管,设计并优化了Co离子的掺磁方案。通过扫描电镜、透射电镜、X射线衍射、红外光谱和能量色散X射线光谱对制备的样品进行了结构表征。实验结果表明,液相法可制备出晶相良好的Bi2Te3纳米管、Co离子均匀掺杂的Bi2Te3纳米结构样品。     

Study on multiple near-infrared luminescent centers and effects of aluminum ions in Bi2O3-GeO2 glass system

We report on the near-infrared (NIR) luminescent properties of Bi₂O₃-GeO₂ glass. Apparent differences of NIR luminescence, decay properties and thermal stability manifest the co-existence of more than one active center in this system. The effects of Al ions introduced both unintentionally and intentionally were investigated. ²⁷Al NMR analysis proposes 4-fold Al coordination as dominant structure which can also provide the environment for active centers. We suggest that Al ions play a crucial role to restrain concentration quenching at higher Bi₂O₃ concentration instead of assisting to construct Bi centers.     

Microstructural features and deformation-induced lattice defects in hot-extruded Bi2Te3 thermoelectric compound

Bismuth telluride (Bi₂Te₃) bulk material was prepared by a powder hot-extrusion technique. The microstructure, texture evolution, and deformation-induced lattice defects, as well as the effect of heat treatment on its microstructure and thermoelectric properties were investigated. As-extruded Bi₂Te₃ compound was found to be characterized by a dynamically and statically recrystallized microstructure with fine-equiaxed grains and low dislocation density. The majority of boundaries in the extruded specimens were large-angle boundaries with average misorientation angles of more than 30°. There was no significant change in dislocation configuration, even after heat treatment at a temperature higher than the extrusion temperature. Moreover, the Seebeck coefficient and electrical resistivity of the extruded specimens could not be improved by annealing. Microstructural examinations indicated the existence of a deformation-induced stacking disorder with local atomic shift, which we term “phase disorder,” on the basal plane in the extruded Bi₂Te₃ compound. The presence of this structural defect may be one of the main reasons for the slightly lower values of thermoelectric properties for the hot-extruded Bi₂Te₃ compound, compared with a unidirectionally solidified specimen.     

超声协同微球型Bi2O2CO3降解罗丹明B的研究

Bi_2O_2CO_3是一种Bi类半导体催化剂,文章研究了它的超声催化性能。首先,采用水热法制备了微球型的Bi_2O_2CO_3,利用X射线衍射(X-ray Diffraction, XRD)、扫描电子显微镜(Scanning Electron Microscope, SEM)、紫外-可见漫反射光谱对样品的晶体结构、微观形貌、光学特性进行了表征。然后,以罗丹明B(Rh B)作为模型污染物,通过研究超声催化降解罗丹明B来评测Bi_2O_2CO_3的超声催化性能。研究了催化剂的浓度(Ccatalytic)、初始罗丹明B染料的浓度(CRhB)和超声功率(P)等实验因素对超声催化降解效率的影响。得出在Ccatalytic=3 g·L-1,CRhB=10 mg·L-1和P=400 W条件下降解罗丹明B的效率最高,其最高降解效率可以达到91.7%。     

Influence of sodium compounds at the Cu(In,Ga)Se2/(PVD)In2S3 interface on solar cell properties

The present contribution deals with indium sulfide buffer layers grown by thermal co-evaporation of elemental indium and sulfur. It has been found necessary to deposit these buffer layers at low substrate temperatures in order to reach V_oc values similar to those with (CBD)CdS. However, such deposition conditions lead to the formation of a highly recombinative Cu(In,Ga)Se₂/indium sulfide interface. This behaviour may be associated to the presence of sodium carbonates/oxides at the interface even though the Cu(In,Ga)Se₂ surface was cleaned in NH₃ (1 M, room temperature) prior to the indium sulfide deposition. An explanation is that, despite the chemical etch, sodium carbonates/oxides remain in the air exposed Cu(In,Ga)Se₂ grain boundaries and can migrate towards the surface when the Cu(In,Ga)Se₂ is heated under vacuum. These polluted interface areas act as recombination zones and thus inferior devices. A possibility to improve the device performance (i.e. improve the interface quality) is to sulfurize the remaining sodium carbonates/oxides. The resulting Na₂S can then leave the interface by formation of a solid solution with the indium sulfide. By adapting the buffer layer deposition process, 13.3% efficiency devices with co-evaporated indium sulfide are realized, performance which is close to that reached with (CBD)CdS.     

Photoelectrochemical properties of thin Bi2WO6 films

Thin Bi₂WO₆ film prepared from an amorphous heteronuclear complex via dip-coating method is investigated as a visible light-driven photoelectrode material. Photoelectrochemical properties of the resultant film are investigated on the basis of linear sweep voltammetry and current-time curves, and conduction and valence band edges of the film electrode are determined from the photocurrent voltage response. Anodic photocurrent associated with the oxidation of water is obtained under visible light irradiation. Furthermore, the film as a photoanode can degrade rhodamine B (RhB) and methylene blue (MB) in aqueous solution under visible light irradiation slowly. The application of bias potential further improves the photodegradation efficiency of RhB and MB. Based on the analytic result of current-time curve, the stability of the film electrode is confirmed.