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 共查询到19条相似文献,搜索用时 62 毫秒
1.
安恒  李得天  文轩  张晨光  王鷁  马奎安  李存惠  薛玉雄  杨生胜  曹洲 《红外与激光工程》2020,49(8):20190533-1-20190533-7
利用脉冲激光验证高速脉宽调制控制器(Pulse Width Modulator,PWM)单粒子瞬态效应的敏感性和防护设计。试验中,通过改变脉冲激光能量,逐步扫描PWM控制器电路,确定了诱发单粒子瞬态效应的激光能量阈值和敏感区域。通过改变PWM控制器软启动配置电路设计,验证了防护电路设计的合理性,为卫星电源子系统的单粒子瞬态效应防护设计提供技术参考。  相似文献   

2.
安恒  张晨光  杨生胜  薛玉雄  王光毅  王俊 《红外与激光工程》2019,48(3):320001-0320001(7)
验证SiGe BiCMOS工艺线性器件的单粒子瞬态(Single Event Transient,SET)效应敏感性,选取典型运算放大器THS4304和稳压器TPS760进行了脉冲激光试验研究。试验中,通过能量逐渐逼近方法确定了其诱发SET效应的激光阈值能量,并通过逐点扫描的办法分析了器件内部单粒子效应敏感区域,并在此基础上分析了脉冲激光能量与SET脉冲的相互关系,获得了单粒子效应截面,为SiGe BiCMOS工艺器件在卫星电子系统的筛选应用以及抗辐射加固设计提供数据参考。  相似文献   

3.
建立了一种28 nm HPL硅工艺超大规模SRAM型FPGA的单粒子效应测试方法。采用静态测试与动态测试相结合的方式,通过ps级脉冲激光模拟辐照实验,对超大规模FPGA进行单粒子效应测试。对实验所用FPGA的各敏感单元(包括块随机读取存储器、可配置逻辑单元、可配置存储器)的单粒子闩锁效应和单粒子翻转极性进行了研究。实验结果证明了测试方法的有效性,揭示了多种单粒子闩锁效应的电流变化模式,得出了各单元的单粒子效应敏感性区别。针对块随机读取存储器、可配置逻辑单元中单粒子效应翻转极性的差异问题,从电路结构方面进行了机理分析。  相似文献   

4.
5.
在三维器件数值模拟的基础上,以经典的双指数模型为原型通过数值拟合得到了单粒子效应瞬态电流脉冲的表达式,在理论分析的基础上,引入了描述晶体管偏压和瞬态电流关系的方程,并将其带入电路模拟软件HSPICE中进行SRAM存储单元单粒子翻转效应的电路模拟,最后分别使用电路模拟和混合模拟两种方法得到了存储单元的LET阈值,通过在精度和时间开销上的对比,验证了这种模拟方法的实用性.  相似文献   

6.
SRAM单元单粒子翻转效应的电路模拟   总被引:3,自引:0,他引:3  
在三维器件数值模拟的基础上,以经典的双指数模型为原型通过数值拟合得到了单粒子效应瞬态电流脉冲的表达式,在理论分析的基础上,引入了描述晶体管偏压和瞬态电流关系的方程,并将其带入电路模拟软件HSPICE中进行SRAM存储单元单粒子翻转效应的电路模拟,最后分别使用电路模拟和混合模拟两种方法得到了存储单元的LET阈值,通过在精度和时间开销上的对比,验证了这种模拟方法的实用性.  相似文献   

7.
高成  张芮  王怡豪  黄姣英 《微电子学》2019,49(5):729-734
针对小尺寸CMOS反相器的单粒子瞬态效应,分别采用单粒子效应仿真和脉冲激光模拟试验两种方式进行研究。选取一种CMOS双反相器作为研究对象,确定器件的关键尺寸,并进行二维建模,完成器件的单粒子瞬态效应仿真,得到单粒子瞬态效应的阈值范围。同时,开展脉冲激光模拟单粒子瞬态效应试验,定位该器件单粒子瞬态效应的敏感区域,捕捉不同辐照能量下器件产生的单粒子瞬态脉冲,确定单粒子瞬态效应的阈值范围,并与仿真结果进行对比分析。  相似文献   

8.
随着器件尺寸的等比例缩小,单粒子瞬态效应对集成电路的影响愈发明显,其产生机理及作用更加复杂。从集成电路单粒子瞬态脉冲的产生机理及模型出发,讨论分析了模拟和数字集成电路的单粒子瞬态效应,介绍了单粒子瞬态脉冲宽度的测试方法与测试结构。  相似文献   

9.
随着器件尺寸的等比例缩小,单粒子瞬态效应对集成电路的影响愈发明显,其产生机理及作用更加复杂。从集成电路单粒子瞬态脉冲的产生机理及模型出发,讨论分析了模拟和数字集成电路的单粒子瞬态效应,介绍了单粒子瞬态脉冲宽度的测试方法与测试结构。  相似文献   

10.
This paper introduces major characteristics of the single event latchup(SEL) in CMOS devices.We accomplish SEL tests for CPU and SRAM devices through the simulation by a pulse laser.The laser simulation results give the energy threshold for samples to undergo SEL.SEL current pulses are measured for CMOS devices in the latchup state,the sensitive areas in the devices are acquired,the major traits,causing large scale circuits to undergo SEL,are summarized,and the test equivalence between a pulse laser and ions is also analyzed.  相似文献   

11.
A robust test set for analog circuits has to detect faults under maximal masking effects due to variations of circuit parameters in their tolerance box. In this paper we propose an optimization based multifrequency test generation method for detecting parametric faults in linear analog circuits. Given a set of performances and a frequency range, our approach selects the test frequencies that maximize the observability on a circuit performance of a parameter deviation under the worst masking effects of normal variations of the other parameters. Experimental results are provided and validated by HSpice simulations to illustrate the proposed approach.  相似文献   

12.
With feature size scaling down, Miller feedback effects of gate-to-drain capacitance for transistors and coupling effects between interconnects will dramatically affect single event transient (SET) generation and propagation in combinational logic circuits. Two ways of ICs are arranged: linear and “S” types. For pulse width and delay time, SET propagations in two layouts of digital circuits are compared under considering the coupling effects between interconnects. An analytical model is used to describe the impact of Miller and coupling effects on SET propagation. A criterion for SET occurrence in digital circuits with effects of coupling and Miller feedback is presented. The influence of temperature and technology node on SET generation and propagation is analyzed. The results indicate that (1) the existence of these effects will improve the critical charge for SET generation and also reduce the estimated SER, and (2) the way of “S” type is more immune to SET than the scheme of linear.  相似文献   

13.
Several designs for test techniques for fully differential circuits have recently been proposed. These techniques are based on the inherent data encoding, the fully differential analog code (FDAC), present in differential circuits. These techniques have not previously been verified experimentally. In this paper, we report results from a fabricated test chip which incorporates design for test structures. The test chip is a fully differential fifth-order filter, and was fabricated on a 2-μm CMOS process. The test techniques implemented are derived from a system-level technique developed earlier. The test chip contains fault injection circuitry to emulate faults. Our results demonstrate that the FDAC is a viable design for test technique for analog circuits  相似文献   

14.
单电源模拟设计技术及虚地发生器的应用   总被引:1,自引:0,他引:1  
孙全意  江小华  张河 《半导体技术》2001,26(12):51-53,57
对单电源模拟电路设计中的核心部件单纯源放大器进行了分析并提出几点应注意的问题;介绍了TI公司的虚地发生器(TLE2425/2426)在单电源模拟电路设计中的应用,并与一般的电压参考进行了比较。  相似文献   

15.
This paper presents a method for functional testing of analog circuits, on the basis of circuit sensitivities. The approach selects the minimum number of measurements that allows a precise prediction of a circuit's functional behavior. A criterion is applied to this predicted behavior to determine if the circuit functions according to specifications. The presented method combines a matrix decomposition technique (the singular value decomposition) with an iterative algorithm to select measurements. The number of measurements is determined on the basis of the desired precision of the response prediction and the influence of random measurement errors. Examples demonstrate that the resulting method tests the functional circuit behavior with a high precision, even in the presence of large measurement errors.  相似文献   

16.
Low-cost test of embedded RF/analog/mixed-signal circuits in SOPs   总被引:1,自引:0,他引:1  
Increasing levels of integration and high speeds of operation have made the problem of testing complex systems-on-packages (SOPs) very difficult. Testing packages with multigigahertz RF and optical components is even more difficult as external tester costs tend to escalate rapidly beyond 3 GHz. The extent of the problem can be gauged by the fact that test cost is approaching almost 40% of the total manufacturing cost of these packages. To alleviate test costs, various solutions relying on built-off test (BOT) and built-in test (BIT) of embedded high-speed components of SOPs have been developed. These migrate some of the external tester functions to the tester load board (BOT) and to the package and the die encapsulated in the package (BIT) in an "intelligent" manner. This paper provides a discussion of the emerging BOT and BIT schemes for embedded high-speed RF/analog/mixed-signal circuits in SOPs. The pros and cons of each scheme are discussed and preliminary available data on case studies are presented.  相似文献   

17.
This paper presents single event effect (SEE) characteristics of UC1845AJ pulse width modulators (PWMs) by laser testing. In combination with analysis to map PWM circuitry in the microchip dies, the typical SEE response waveforms for laser pulses located in different circuit blocks of UC1845AJ are obtained and the SEE mechanisms are analyzed. The laser SEE test results show that there are some differences in the SEE mechanisms of different circuit blocks, and phase shifts or changes in the duty cycles of few output pulses are the main SEE behaviors for UC1845AJ. In addition, a new SEE behavior which manifests as changes in the duty cycles of many output pulses is revealed. This means that an SEE hardened design should be considered.  相似文献   

18.
In this paper, a new automated test generation methodology for specification testing of analog circuits using test point selection and efficient analog test response waveform capture methods for enhancing the test accuracy is proposed. The proposed approach co-optimizes the construction of a multi-tone sinusoidal test stimulus and the selection of the best set of test response observation points. For embedded analog circuits, it uses a subsampling-based digitization method compatible with IEEE 1149.1 to accurately digitize the analog test response waveforms. The proposed specification approach uses ‘alternate test’ framework, in which the specifications of the analog circuit-under-test are computed (predicted) using statistical regression models that are constructed based on process variations and corresponding variations of test responses captured from different test observation points. The test generation process and the test point selection process aim to maximize the accuracy of specification prediction. Experimental results validating the proposed specification test approach are presented.  相似文献   

19.
An accurate and computer efficient analytical model for the evaluation of integrated circuit sensitivity to radiation induced single event transients is presented. The key idea of the work is to exploit a model that allows the rapid determination of the sensitivity of any MOS circuit to single event transients (SETs), without the need to run circuit level simulations. To accomplish this task, both single event transient generation and its propagation through circuit logic stages are characterized and modeled. The model predicts whether or not a particle hit generates a transient pulse which may propagate to the next logic gate or memory element. The electrical masking (attenuation) of the transient pulse as it propagates through each stage of logic until it reaches a memory element is also modeled. Model derivation is in strong relation with circuit electrical behavior, being consistent with technology scaling. The model is suitable for integration into CAD-Tools, intending to make automated evaluation of circuit sensitivity to SEU possible.  相似文献   

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