FBG椭圆边孔封装的静水压力增敏技术研究

针对光纤光栅（FBG）的静水压力增敏及压力温度交叉敏感问题,提出光纤光栅的椭圆型边孔封装结构。采用有限元方法分析了封装结构中光纤光栅的力学效应,在此基础上得到优化的椭圆封装结构,并通过实验检验了理论分析结果。研究结果表明：优化的椭圆边孔封装结构中光纤光栅的静水压力灵敏度比裸光纤光栅高了4 198倍,而温度灵敏度仅增加了3.4倍,与裸光纤光栅相比,压力温度交叉敏感降低了1 760倍。该研究结果对光纤光栅压力传感器的实用化研究有参考价值。     

光纤光栅温度传感器增敏封装特性研究

通过利用聚酰亚胺涂覆裸光纤光栅的方法研制了一种增敏型光纤光栅温度传感器,其反射波长的温度敏感系数由曾敏前的10pm/℃提升至40pm/℃。在-40~200℃测试环境中,开展了传感器标定和温度精度测量试验。试验结果表明:利用光纤光栅增敏封装,在高低温环境中采用低精度光纤光栅解调仪,传感器的测温精度由±0.4℃提升至±0.1℃。上述结果显示,采用增敏封装结构能够提升光纤光栅温度传感器的测量精度,减低制作成本。     

光纤水听器梭形封装结构灵敏度分析

提高光纤光栅传感器响应灵敏度是提高光纤光栅传感系统检测精度的有效途径之一。聚合物封装是一种简单,有效的光纤光栅保护以及压力增敏方案。文章对采用梭形封装的光纤光栅水听器探头的压力传感特性进行了研究,基于有限元软件ANSYS,对不同聚合物材料所获得的传感效果进行了比较。分析结果表明一定材料的梭形结构压力灵敏度比裸光纤的提高了约200倍。     

光纤光栅传感器的压力增敏技术进展

光纤光栅传感器具有许多独特优点,但裸光纤光栅的压力灵敏度很低,给信号检测带来不便,并且裸光纤过于纤细容易损伤,使用中必须对其有效保护,因此有必要对光纤光栅传感器进行封装,既实现压力增敏,又保护光纤.针对这一问题,分类阐述了光纤光栅传感器封装工艺的最新进展情况,并对其优缺点进行了分析和讨论.     

用于沥青路面载荷监测的光纤光栅压力传感器

提出了一种可用于沥青路面载荷测量的新型高灵敏度光纤布拉格光栅(FBG)压力传感器.传感器采用金属材料和聚合物相结合的封装形式,通过改变聚合物的几何结构实现了高倍数压力增敏效果,并从理论推导了该传感器的光栅中心波长相对偏移量与加载其上压强之间的解析关系.实验结果表明:该传感器的压力监测灵敏度达到2.39×10-8 Pa-...     

光纤Bragg光栅传感原理及增敏技术

从增敏的角度,分析了光纤Bragg光栅的传感理论,在此基础上研究了光纤Bragg光栅的温度应力增敏原理。从不同的方面阐述了温度应力增敏技术,并进一步分析了光纤Bragg光栅压力温度传感器的增敏模型,研究了光纤光栅传感器的封装增敏技术。     

光纤Bragg光栅传感原理及增敏技术

从增敏的角度，分析了光纤Bragg光栅的传感理论，在此基础上研究了光纤Bragg光栅的温度应力增敏原理。从不同的方面阐述了温度应力增敏技术，并进一步分析了光纤Bragg光栅压力温度传感器的增敏模型，研究了光纤光栅传感器的封装增敏技术。     

光纤光栅传感器的聚合物封装增敏技术

基于聚合物封装光纤光栅温度、应变传感原理,从聚合物材料的特点、聚合物材料的选择、用聚合物对光纤光栅传感器进行封装的要求及封装工艺进行了综述,并介绍了目前解决光纤光栅压力和温度增敏及应变和温度同时区分测量的各种方法,同时介绍了聚合物封装的应用前景。     

聚合物封装光纤布拉格光栅传感器温度压力特性研究

分析了聚合物封装光纤布拉格光栅(FBG)传感器温度与压力响应特性。通过实验对某种特殊聚合物封装光纤光栅的温度与压力响应进行研究，发现当温度变化范围较大时．由于温度对材料弹性模量的影响．光纤光栅的压力响应灵敏度不再为常数，而是随温度变化的。当温度在30℃时．其压力响应灵敏度为0．036nm／MPa．在180℃时则变为0．175nm／MPa，且灵敏度系数随温度的变化呈分段线性变化。因此在使用聚合物封装实现光纤光栅传感器增敏以及大范围温度和压力的同时测量时，需要将弹性模量作为温度的函数．代入光纤光栅温度与压力响应灵敏度系数矩阵公式中以消除大范围温度变化对聚合物力学特性的影响。     

边孔光纤光栅的传感特性

报道了一种新型边孔光纤及边孔光纤光栅的研究结果。采用有限元法分析了边孔光纤内部的应力分布和双折射数值,并通过波长扫描技术对其双折射进行了测量,理论计算和实验测量结果表明双折射数值达到4×10-5。根据边孔光纤光栅两反射峰偏振态相互正交的特性,提出了一种基于偏振检测的波长检测方案对边孔光纤光栅的传感特性进行了测量。结果表明两峰中心波长间隔随温度变化的灵敏度仅有0.05 pm/℃,是普通单模光纤光栅温度灵敏度的1/184。提出了一种基于横向荷载压力增敏的新型边孔光纤光栅封装装置,使边孔光纤光栅双峰间距的压力灵敏度从5.6 pm/MPa增加到119.14 pm/MPa,增敏21倍,实现了温度不敏感的高灵敏度压力传感。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.