3V 10b 70 MHz CMOS D/A converter for video applications

This work describes a 10 b 70 MHz CMOS digital-to-analogue converter (DAC) for video applications. The proposed DAC is composed of a unit decoded matrix for 7 MSBs and a binary weighted array for 3 LSBs, considering linearity, power consumption, routing area and glitch energy. A new switching scheme for the unit decoded matrix is developed to further improve the linearity. Cascode current sources and differential switches with a new deglitching circuit improve the dynamic performance     

A low glitch 10-bit 75-MHz CMOS video D/A converter

A low glitch 10-bit 75-MHz CMOS current-output video digital-to-analog Converter (DAC) for high-definition television (HDTV) applications is described. In order to achieve monotonicity and low glitch, a special segmented antisymmetric switching sequence and an innovative asymmetrical switching buffer have been used. The video DAC has been fabricated by using 0.8 μm single-poly double-metal CMOS technology. Experimental results indicated that the conversion rate is above 75 MHz, and nearly 50% of samples have differential and integral linearity errors less than 0.24 LSB and 0.6 LSB, respectively. The glitch has been reduced to be less than 3.9 pV·s and the settling time within ±0.1% of the final value is less than 13 ns. The video DAC is operated by a single 5 V power supply and dissipates 1.70 mW at 75 MHz conversion rate (140 mW in the DAC portion). The chip size of video DAC is 1.75 mm×1.2 mm (1.75 mm×0.7 mm for the DAC portion)     

一种低功耗嵌入式14位400MHz数模转换器

设计了一个14位刷新频率达400MHz,用于高速频率合成器的低功耗嵌入式数模转换器。该数模转换器采用5+4+5分段式编码结构,其电流源控制开关输出驱动级采用归零编码以提高DAC动态特性。该数模转换器核采用0.18μm1P6M混合信号CMOS工艺实现,整个模块面积仅为1.1mm×0.87mm。测试结果表明,该DAC模块的微分非线性误差是-0.9～+0.5LSB,积分非线性误差是-1.4～+1.3LSB,在400MHz工作频率下,输出信号频率为80MHz时的无杂散动态范围为76.47dB,并且功耗仅为107.2mW。     

Nyquist电流型7位20MHz采样率CMOS数模转换器

介绍了一种高速7位DAC的设计及芯片测试结果,该DAC选取高5位单位电流源,低2位二进制电流源的分段结构。考虑了电流源匹配、毛刺降低以及版图中误差补偿等方面的问题来优化电路。流片采用0.35μmChartered双层多晶四层金属工艺,测试结果表明在20 MH z的采样频率下,微分非线性度和积分非线性度分别小于±0.2 LSB和±0.35 LSB。该DAC的满幅建立时间是20 ns,芯片面积为0.17 mm×0.23 mm。电源电压为3.3 V,功耗为3 mW。     

Power efficient high-speed DAC for wideband communication applications

This paper demonstrates a power efficient design of high-speed Digital-to-Analog Converters (DACs) for wideband communication systems. For Wireless personal area network applications with a 250 MHz signal bandwidth, a 6 bit DAC capable of two times the Nyquist rate sampling is implemented in a current steering segmented 2 + 4 architecture optimized for power efficiency. Along with a proposed master-slave deglitch circuit, several circuit techniques are investigated to improve dynamic performances such as linearity. Implemented in a 0.18 um CMOS process, our DAC achieved a superior conversion performance over the state-of-the-arts, exhibiting integral nonlinearity of less than 0.27 LSB and differential nonlinearity of less than 0.15 LSB. Measured spurious free dynamic range for 251 MHz output signal is 40.92 dB, with total power consumption at 1 GS/s of 6mW, yielding a figure-of-merits of 78.3 pJ/(conversion step*W).     

Design of a 12-bit high-speed CMOS D/A converter using a new 3D digital decoder structure useful for wireless transmitter applications

In this paper a 12-bit Nyquist current-steering digital-to-analog converter (DAC) is implemented using TSMC 0.35 μm standard CMOS process technology. The proposed DAC is an essential part in baseband section of wireless transmitter circuits. Using oversampling ratio (OSR) for it leads to avoid use of an active analog reconstruction filter. The optimum segmentation (75%) has been used to get the best DNL and reduce glitch energy. This segmentation ratio guarantees the monotonicity. Higher performance is achieved using a new 3D thermometer decoding method which reduces the area, power consumption and the number of control signals of the digital section. Using two digital channels in parallel, helps reach 1 GHz sampling frequency. Simulations indicate that the DAC has an accuracy better than 10.7-bit for upcoming higher data rate standards (IEEE 802.16 and 802.11n), and a spurious-free-dynamic-range (SFDR) higher than 64 dB in whole Nyquist frequency band. The post layout four corner Monte-Carlo simulated INL is better than 0.74 LSB while simulated DNL is better than 0.49 LSB. The analog voltage supply is 3.3 V while the digital part of the chip operates with only 2.4 V. Total power consumption in Nyquist rate measurement is 144.9 mW. Active area of chip is 1.37 mm².     

A 100-MHz CMOS DAC for video-graphic systems

A 6-b weighted-current-sink video digital-to-analog converter (DAC) with 10-90% rise/fall time of 4 ns, integrated with a double-metal 3-μm CMOS technology, is described. Current-source matching, glitch reduction, and differential switch driving aspects are considered. A circuit solution and a nonconventional layout technique yield a high conversion rate with a standard CMOS technology. Experimental results show that a conversion rate of 100 MHz is achievable. The power consumption is 150 mW and the active chip area is 0.5×1.0 mm² . The differential of 0.1 LSB demonstrates that 8 b of accuracy can be achieved. The integral linearity is 0.5 LSB     

A 12-bit 80-MSample/s pipelined ADC with bootstrapped digital calibration

This paper presents a prototype analog-to-digital converter (ADC) that uses a calibration algorithm to adaptively overcome constant closed-loop gain errors, closed-loop gain variation, and slew-rate limiting. The prototype consists of an input sample-and-hold amplifier (SHA) that can serve as a calibration queue, a 12-bit 80-MSample/s pipelined ADC, a digital-to-analog converter (DAC) for calibration, and an embedded custom microprocessor, which carries out the calibration algorithm. The calibration is bootstrapped in the sense that the DAC is used to calibrate the ADC, and the ADC is used to calibrate the DAC. With foreground calibration, test results show that the peak differential nonlinearity (DNL) is -0.09 least significant bits (LSB), and the peak integral nonlinearity (INL) is -0.24LSB. Also, the maximum signal-to-noise-and-distortion ratio (SNDR) and spurious-free dynamic range (SFDR) are 71.0 and 79.6dB with a 40-MHz sinusoidal input, respectively. The prototype occupies 22.6 mm/sup 2/ in a 0.25-/spl mu/m CMOS technology and dissipates 755 mW from a 2.5-V supply.     

A 130-MHz 8-b CMOS video DAC for HDTV applications

In order to achieve monotonicity and a high-speed performance, a current-cell matrix configuration and a parallel decoding circuit with one-stage latches have been used. A deglitching circuit has been introduced in the decoding stages to guarantee a low glitch energy. P-channel devices used as current sources ensure a low noise level and a ground-referenced voltage output in a doubly terminated 75-Ω transmission line. Experimental results have shown that the maximum conversion rate is 130 MHz and the integral and differential linearity errors are less than 0.5 LSB. The maximum glitch energy is 50 pS-V. The DAC has been developed in a 1-μm digital/analog CMOS technology. The entire circuit dissipates 150 mW at a 130-MHz conversion rate while operating from a single 5-V power supply     

A power-efficient 10-bit 40-MS/s sub-sampling pipelined CMOS analog-to-digital converter

This paper presents a 10-bit 40-MS/s pipelined analog-to-digital converter (ADC) in a 0.13-μm CMOS process for subsampling applications. A simplified opamp-sharing scheme between two successive pipelined stages is proposed to reduce the power consumption. For subsampling, a cost-effective fast input-tracking switch with high linearity is introduced to sample the input signal up to 75 MHz. A two-stage amplifier with hybrid frequency compensation is developed to achieve both high bandwidth and large swing with low power dissipation. The measured result shows that the ADC achieves over 77 dB spurious free dynamic range (SFDR) and 57.3 dB signal-to-noise-plus-distortion ratio (SNDR) within the first Nyquist zone and maintains over 70 dB SFDR and 55.3 dB SNDR for input signal up to 75 MHz. The peak differential nonlinearity (DNL) and integral nonlinearity (INL) are ±0.2 LSB and ±0.3 LSB, respectively. The ADC consumes 15.6 mW at the sampling rate of 40 MHz from a 1.2-V supply voltage, and achieves a figure-of-merit (FOM) value of 0.22 pJ per conversion step.     

Design of a laminated current cell relocation 12-bit CMOS D/A converter with a high output impedance technique and a merged switching logic

A compact and low power 12-bit 300 MS/s current steering CMOS D/A converter is presented. The architecture of the D/A converter is based on the current steering 6 + 6 segmented type with a laminated current cell relocation technique. In order to improve the linearity and glitch noise, a high output impedance analog current cell is designed. Furthermore, for the purpose of reducing the chip area and power dissipation, a noble merged switching logic and a compact layout technique are proposed. To verify its performance, the chip was fabricated with 0.13 μm thick-gate 1-poly 6-metal N-well Samsung CMOS technology. The effective chip area is 0.26 mm² (510 × 510 μm) with a power consumption of 100 mW. The measured INL and DNL are within ±3LSB and ±1LSB, respectively. The measured SFDR is about 70 dB, when the input frequency is 1 MHz at a clock frequency of 300 MHz.     

A 14-bit intrinsic accuracy Q2 random walk CMOS DAC

In this paper, a 14-bit, 150-MSamples/s current steering digital-to-analog converter (DAC) is presented. It uses the novel Q² random walk switching scheme to obtain full 14-bit accuracy without trimming or tuning. The measured integral and differential nonlinearity performances are 0.3 and 0.2 LSB, respectively; the spurious-free dynamic range is 84 dB at 500 kHz and 61 dB at 5 MHz. Running from a single 2.7-V power supply, it has a power consumption of 70 mW for an input signal of 500 kHz and 300 mW for an input signal of 15 MHz. The DAC has been integrated in a standard digital single-poly, triple-metal 0.5-μm CMOS process. The die area is 13.1 mm²     

An 8-bit low power DAC with re-used distributed binary cells architecture for reconfigurable transmitters

In this work an 8-bit DAC is presented which uses a new segmented architecture, where distributed binary cells are re-used in thermometric manner to realize the MSB unit cells. The DAC has been fabricated in 0.18 μm five-metal CMOS n-well process to be embedded in multi-standard reconfigurable wireless transmitters for low-speed applications. The proposed architecture has an inherent ability to reduce midcode glitch like the unary architecture, and the simulated midcode glitch is only 0.01 pV s. Simulation results show that the proposed DAC performs with an integral nonlinearity (INL) of 0.33 LSB and a differential nonlinearity (DNL) of 0.14 LSB. The DAC can achieve a maximum measured SFDR of 65.19 dB for 97.50 kHz signal at a sampling rate of 100 MSPS, without using any calibration or dynamic element matching (DEM) technique. For 1.07 MHz signal the measured SFDR is 56.84 dB at 100 MSPS sampling rate. At 50 MSPS sampling frequency and 146 kHz signal the SFDR of the DAC is 65.90 dB. The measured SFDR at 538 kHz signal is 63.62 dB for a sampling rate of 50 MSPS. Measured third order intermodulation distortion of the DAC is 58.55 dB, for a dual tone test with 1.03 MHz and 1.51 MHz signals at 50 MSPS sampling rate. Low power is also an important aspect in portable wireless devices. For 10.06 MHz signal and 100 MSPS sampling frequency, the power dissipation of the DAC is 20.74 mW with 1.8 V supply.     

A self-trimming 14-b 100-MS/s CMOS DAC

A 14-b 100-MS/s CMOS digital-analog converter (DAC) designed for high static and dynamic linearity is presented. The DAC is based on a central core of 15 thermometer decoded MSBs, 31 thermometer decoded upper LSBs (ULSBs) and 31 binary decoded lower LSBs (LLSBs). The static linearity corresponding to the 14-b specification is obtained by means of a true background self-trimming circuit which does not use additional current sources to replace the current source being measured during self-trimming. The dynamic linearity of the DAC is enhanced by a special track/attenuate output stage at the DAC output which tracks the DAC current outputs when they have settled but attenuates them for a half-clock cycle after the switching instant. The DAC occupies 3.44 mm×3.44 mm in a 0.35-μm CMOS process, and is functional at up to 200 MS/s, with best dynamic performance obtained at 100 MS/s. At 100 MS/s, power consumption is 180 mW from a 3.3-V power supply, and 210 mW at 200 MS/s     

A 10-bit DAC with offset-adjustable op-amp for LCD column driver applications

This paper proposes a 10-bit digital-to-analog converter (DAC) consisting of a 6-bit resistive DAC (RDAC) and a 4-bit offset-adjustable op-amp for LCD column driver applications. The 6-bit RDAC selects only one voltage from the global resistor string before transmitting it to the op-amp. The op-amp implements 4-bit interpolation by adjusting the offset voltage. The maximal differential nonlinearity and integral nonlinearity of the proposed converter were measured at 0.8 LSB and 0.81 LSB, respectively, using 1LSB equal to 2 mV. The proposed 10-bit DAC occupies only 70 % of the space required for a conventional 8-bit RDAC.     

一种GSM无线发射系统中的低功耗数模转换器

针对GSM标准无线发射系统中数模转换器(DAC)的要求,分析了影响其性能和功耗的限制因素,并在SMIC 0·13μm CMOS工艺1.2 V电源电压下设计了一款10位电流驱动型数模转换器(Current-steering DAC).使用最佳拟合线的算法衡量电流源匹配的随机误差对DAC静态非线性的影响,使得DAC的电流源...     

A 14-b, 100-MS/s CMOS DAC designed for spectral performance

A 14-bit, 100-MS/s CMOS digital-to-analog converter (DAC) designed for spectral performance corresponding more closely to the 14-bit specification than current implementations is presented. This DAC utilizes a nonlinearity-reducing output stage to achieve low output harmonic distortion. The output stage implements a return-to-zero (RZ) action, which tracks the DAC once it has settled and then returns to zero. This RZ circuit is designed so that the resulting RZ waveform exhibits high dynamic linearity. It also avoids the use of a hold capacitor and output buffer as in conventional track/hold circuits. At 60 MS/s, DAC spurious-free dynamic range is 80 dB for 5.1-MHz input signals and is down only to 75 dB for 25.5-MHz input signals. The chip is implemented in a 0.8-μm CMOS process, occupies 3.69×3.91 mm ² of die area, and consumes 750 mW at 5-V power supply and 100-MS/s clock speed     

一种基于65 nm CMOS工艺的10位10 MS/s SAR ADC

基于SMIC 65 nm CMOS工艺,设计了一种10位10 MS/s逐次逼近型模数转换器(SAR ADC)。采用全差分的R-C组合式DAC网络结构进行设计,提高了共模噪声抑制能力和转换精度。与全电容结构相比,R-C组合式DAC网络结构有效减小了版图面积。DAC中各开关的导通采用对称的开关时序,使比较器差分输入的共模电平保持为固定值,降低了比较器的失调电压,提高了ADC的线性度。在2.5 V模拟电源电压和1.2 V数字电源电压下,使用Spectre进行仿真验证,测得DNL为0.5 LSB,INL为0.8 LSB;在输入信号频率为4.990 2 MHz,采样频率为10 MHz的条件下,测得电路的有效位数为9.63位,FOM为0.04 pJ/conv。     

A 10-b, 500-MSample/s CMOS DAC in 0.6 mm2

A 10-b current steering CMOS digital-to-analog converter (DAC) is described, with optimized performance for frequency domain applications. For sampling frequencies up to 200 MSample/s, the spurious free dynamic range (SFDR) is better than 60 dB for signals from DC to Nyquist. For sampling frequencies up to 400 MSample/s, the SFDR is better than 55 dB for signals from DC to Nyquist. The measured differential nonlinearity and integral nonlinearity are 0.1 least significant bit (LSB) and 0.2 LSB, respectively. The circuit is fabricated in a 0.35-μm, single-poly, four-metal, 3.3 V, standard digital CMOS process and occupies 0.6 mm². When operating at 500 MSample/s, it dissipates 125 mW from a 3.3 V power supply. This DAC is optimized for embedded applications with large amounts of digital circuitry     

A 1-GS/s 6-bit folding and interpolating ADC in 0.13-μm CMOS

A 1-GS/s 6-bit two-channel time-interleaved folding and interpolating analog-to-digital converter (ADC) is presented in this article. For low voltage applications, input-connection-improved active interpolating amplifiers and cascaded folding amplifiers have been applied. A single front-end track-and-hold (T/H) circuit is used to avoid the sampling-time mismatches between the channels. When supplied with 1.4 V, the circuit achieves signal-to-noise-plus-distortion ratio (SNDR) of 30.74 dB and spurious free dynamic range (SFDR) of 36.91 dB and consumes a power of 66 mW with 500-MHz input and 1-GS/s sampling rate. Differential nonlinearity (DNL) and integral nonlinearity (INL) are 0.57 and 0.81 LSB, respectively. The figure of merit (FoM) is 1.75 pJ/conversionstep. The ADC circuit is prototyped in 0.13-μm CMOS process and occupies a core area of 0.45 mm².