基于TRL的3mm波段变容二极管对建模方法

本文在商用变容二极管的简化电路模型基础上,对非线性肖特基结和周围的无源结构进行了基于石英介质的TRL去嵌入建模分析,在考虑二极管无源区和封装环境各种寄生参量情况下,建立了精确的3mm波段二极管对电路模型.采用TRL算法,通过拟合初始二极管S参数曲线和TRL测试参数确定芯片电路模型中各集总参数元件数值.二极管对在片各项测试结果和基于改进的电路模型仿真结果相吻合.该二极管对电路模型建模方法可应用于毫米波亚毫米波混频倍频电路的准确分析与设计.     

变容二极管调谐体效应振荡器的CAD

本文建立了一种新的 Gunn VCO 的电路模型,计算了 Gunn 管和变容二极管之间的径向盘耦合电容。首次利用谐波平衡法对 Gunn VCO 进行了非线性分析,设计并制作了一 Ka 波段混合集成 Gunn VCO,实验结果与 CAD 结果进行了比较,证明了该种电路模型与分析方法的有效性。此外利用该分析程序研究了Gunn 管和变容二极管之间的耦合与调谐带宽的关系。在分析的基础上,利用线性拟合误差函数作为 Gunn VCO 频率调谐线性度的优化目标函数,对 VCO 的频率调谐特性进行了优化,确定了此种电路在最佳线性调谐时 PN 结幂指数γ的值,从而在理论上对满足线性调谐的变容二极管提出了要求。     

Fast and reliable calculation of the two‐diode model without simplifications

An algorithm to calculate the current in the two‐diode equivalent circuit of a solar cell is described and characterized in detail. It enables fitting measured current–voltage characteristics with hundreds of voltage points and six fit parameters at practically instantaneous speeds and can handle thousands of voltage points within a few seconds, without simplifications of the two‐diode model. This performance enables routine two‐diode model parameter extraction at in‐line speeds, which may help to enhance cell characterization for module integration. The source code is publicly available. Copyright © 2012 John Wiley & Sons, Ltd.     

On the extraction of PiN diode design parameters for validation of integrated power converter design

Design of integrated power systems requires prototype-less approaches. Accurate simulations are necessary for analysis and verification purposes. Simulation relies on component models and associated parameters. The paper focuses on a step-by-step extraction procedure for the design parameters of a one-dimensional finite-element-method (FEM) model of the PiN diode. The design parameters are also available for diverse physics-based analytical models. The PiN diode remains a complex device to model particularly during switching transients. The paper demonstrates that a simple FEM model may be considered unknowingly of the device exact technology. Heterogeneous simulation is illustrated. The state-of-art of parameter extraction methods is briefly recalled. The proposed procedure is detailed. The diode model and extracted parameters are systematically validated from electro-thermal point-of-view. Validity domains are discussed.     

Optical feedback-induced noise in pigtailed laser diode modules

The sensitivity of commercially available pigtailed laser diode modules to optical feedback, in terms of laser relative intensity noise, is investigated. A pigtailed laser diode model which is based on multimode rate equations, Langevin operators, and optical feedback terms in used to predict that operation in the coherence collapse region can be avoided in high-speed, short-haul, optical data links by trading off optical launch power into the pigtail with decreased laser/fiber coupling efficiency. Experimental results for three pigtailed laser diode modules indicate that with a laser/fiber coupling efficiency of 4%, an external feedback level of between -15 and -17 dB can be tolerated before the laser enters the coherence collapse region. Good correlation between these results and predictions from the numerical model is obtained.<>     

Heat transfer and residual stress modeling of a diamond film heat sink for high power laser diodes

A three-dimensional finite element model of heat transfer and residual stress within high power laser diodes and their heat sinks is developed. These components are typically used in telecommunication applications. The model addresses both p-side down and p-side up laser diodes mounted on a variety of commercially available gold plated diamond heat sinks. In addition, the model is optimized with respect to the dimensions of the diamond film, and the laser diode cavity lengths. Finally, the design and performance of diamond film heat sinks for high performance GaAs and InP laser diodes are discussed. The results demonstrate the superior performance achieved through thermal engineering of the dominant thermal transport path from the laser diode heat source through diamond films to the heat sink.     

Photonic - Tiny Infrared Wavelength Laser Diode with 150 mW Optical Output

The modular design enables the TDL90 to operate across a large range of wavelengths -200 nm to 4,5 μm-with several linewidth and tracking options. Its quality and reliability have set the standard for tunable dye lasers for many years. The TDL90 dye laser has a modular design that makes it flexible and easy to adapt to researchers＇ future needs.     

光学组合半导体激光器输出光束特性研究

为了评价光学组合半导体激光器的输出光束性能,采用两种方法从理论上分析了光学组合半导体激光器的输出光束的光束传播因子.第1种方法与传统堆栈式半导体激光器的光束质量评价方法类似,通过几何光学得到光束束宽;第2种方法采用管芯光强分布的类高斯模型计算输出光束的二阶矩进而得到光束束宽,最后均得到输出光束的光束传播因子与激光条单元数及激光条包含管芯数的关系.进行了3个激光条组成的光学组合半导体激光器的实验,获得输出功率120W,功率密度209W/cm2,光束平均间距1.1mm,整体光束传播因子M2=197.对比了两种方法及实验结果.结果表明,这两种方法可以用来估算光学组合半导体激光器的输出光束质量.     

A RF to DC Voltage Conversion Model for Multi-Stage Rectifiers in UHF RFID Transponders

This paper presents a RF to DC conversion model for multi-stage rectifiers in UHF RFID transponders. An equation relating the RF power available from the antenna to the DC output voltage produced by a multi-stage rectifier is presented. The proposed model includes effects of the nonlinear forward voltage drop in diodes and impedance matching conditions of the antenna to rectifier interface. Fundamental frequency impedance approximation is used to analyze the resistance of rectifying diodes; parasitic resistive loss components are also included in the analysis of rectifier input resistance. The closed form equation shows insights into design parameter tradeoffs, such as power available from the antenna, antenna radiation resistance, the number of diodes, DC load current, parasitic resistive loss components, diode and capacitor sizes, and frequency of operation. Therefore, it enables the optimization of rectifier parameters for impedance matching with a low-cost printed antenna and shunt tuning inductor, in order to improve the RF to DC conversion efficiency and the operational distance of UHF RFID transponders. Three diode doublers and three multistage rectifiers were fabricated in a 130 nm CMOS process with custom no-mask added Schottky diodes. Measurements of the test IC are in good agreement with the proposed model.      

基于Matlab对Spice二极管特性受温度影响的研究

为了对Spice程序下的二极管模型的伏安特性和等效电容受温度变化的影响进行研究,在此以软件Matlab的仿真环境为基础,Spice二极管物理模型D1N4002为研究对象,在仿真软件Matlab中编写程序代码,建立了二极管模型D1N4002的伏安特性和等效电容的函数模型,绘制出不同温度下二极管伏安特性和等效电容的曲线,并结合仿真曲线对由温度变化产生的影响进行分析,得出了温度对二板管模型在反向击穿和正向导通状态下的伏安特性及等效电容有明显的影响这一结论。该研究方法以一个新颖的视角,运用Matlab构造特性函数,以温度为变量,研究了Spice二极管模型的特性,同时也为其他更加复杂的半导体器件特性的研究打下了基础。     

Submillimeter-Wave Detection with Submicron-Size Schottky-Barrier Diodes

Schottky-barrier diode detection has been extended to 7.2 THz (42 mu m) using 0.5-mu m-diam diodes. The diodes were fabricated on bulk-doped n-type GaAs using electron lithographic techniques; diameters as small as 1000 /spl Aring/ have been achieved. A new approach in Schottky-barrier design, the contact array diode, is proposed. The diode is fabricated from readily available bulk doped material, and a performance is indicated that is competitive to the conventional epitaxial Schottky-barrier mixer well into the submillimeter wavelength region. A scanning electron microscope (SEM) photograph of diode array structures is shown.     

Microstrip TRAPATT oscillator

Experimental results obtained using a commercially available pvn diode in the TRAPATT mode in a microstrip resonator are given. It is shown that the oscillation frequency is defined easily in terms of a single circuit parameter, and that the diode performance agrees very well with that predicted by recently published analytical models.     

太赫兹平面肖特基二极管参数模型

根据太赫兹平面肖特基二极管物理结构,在理想二极管SPICE参数模型的基础上建立了二极管小信号等效电路模型。依据该二极管等效电路模型设计了基于共面波导（CPW）去嵌方法的二极管S参数在片测试结构,并对其在0.1~50 GHz、75~110 GHz频率范围内进行了高频小信号测试,利用测试结果提取了高频下二极管电路模型中各部分电容、电阻以及电感参数。将相应的高频下电容与电阻参数分别与低频经验公式电容值和直流I-V测试提取的电阻值进行了对比,并利用仿真手段对高频参数模型进行了验证。完整的参数模型以及测试手段相较于理想二极管SPICE模型和传统的参数提取方法可以更为准确地表征器件在高频下的工作状态。该建模思路可用于太赫兹频段非线性电路的优化设计。     

The influence of microwave pulse width on the thermal burnout effect of a PIN diode limiting-amplifying system

This paper analyzes the influence of the microwave pulse width on the thermal burnout effect of a PIN diode limiting-amplifying system. Based on theoretical analyses and simulation, the relationship of the burnout effect on a PIN diode limiter and a PIN diode limiting-amplifying system is obtained first. By adopting an absorption efficiency factor, the theoretical model of the relationship between the microwave pulse width and the burnout power threshold for the PIN diode limiting-amplifying system is obtained. The proposed theoretical formulas can be determined by using at least two sets of simulation or measurement results to fit the constant coefficients, which can greatly reduce the simulation or experimental costs. The results obtained by the theoretical formulas are in good agreement with the numerical simulation results obtained by our self-designed device–circuit joint simulator, which verifies the correction of the theoretical analyses and modeling. The available microwave pulse width range for the proposed theoretical formulas is from 10 ns to 10 μs. In consideration of the potential threat of microwave pulses, the system-level study results obtained in this paper will be helpful for the design of the radio frequency receivers.     

Electronic tuning of stable transferred electron oscillators

The problem of electronic tuning of microwave osciilator structures characterized by high energy storage and hence low noise is considered. The evolution of a wide-band varactor tuned J-band oscillator is described, and analytical criteria are presented which determine the position of the varactor diode and the theoretical maximum tuning range available including Varactor loss. Experimental results confirm the validity of the circuit model used for the proposed oscillator structures.     

Design of a W-band Frequency Tripler for Broadband Operation Based on a Modified Equivalent Circuit Model of GaAs Schottky Varistor Diode

This paper presents the design and experimental results of a W-band frequency tripler with commercially available planar Schottky varistor diodes DBES105a fabricated by UMS, Inc. The frequency tripler features the characteristics of tunerless, passive, low conversion loss, broadband and compact. Considering actual circuit structure, especially the effect of ambient channel around the diode at millimeter wavelength, a modified equivalent circuit model for the Schottky diode is developed. The accuracy of the magnitude and phase of S21 of the proposed equivalent circuit model is improved by this modification. Input and output embedding circuits are designed and optimized according to the corresponding embedding impedances of the modified circuit model of the diode. The circuit of the frequency tripler is fabricated on RT/Rogers 5880 substrate with thickness of 0.127 mm. Measured conversion loss of the frequency tripler is 14.5 dB with variation of ±1 dB across the 75?~?103 GHz band and 15.5?~?19 dB over the frequency range of 103?~?110 GHz when driven with an input power of 18 dBm. A recorded maximum output power of 6.8 dBm is achieved at 94 GHz at room temperature. The minimum harmonics suppression is greater than 12dBc over 75?~?110 GHz band.     

用多模半导体激光器实现动态定位的研究

提出了一种新的半导体激光定位技术。它利用多模半导体激光器的光谱分布引起的干涉条纹的强度分布来确定等光程差点。干涉仪体积小，信号处理简单，系统性能稳定，可以在大范围内捕捉零点。     

A simple diode model with reverse recovery

The basic diode charge-control model used in SPICE is extended to include reverse recovery. The model is derived from the semiconductor charge transport equations. The diode charge transport equations are simplified using the lumped charged concept of Linvill, and the model is demonstrated on the Saber simulator for simple inductive and resistive load circuits. The two model parameters, diode lifetime and diffusion transit time, can easily be determined from a switching waveform     

Theory of triangular-barrier bulk unipolar diodes including minority-carrier effects

The effect of the minority-carrier charge on the barrier height of the triangular-barrier (TB) majority-carrier diode is considered. The consequences of this effect on the device performance as a diode, transistor, photodetector, and a thyristor is briefly delineated. A two-carrier model of the TB diode is developed to account for this effect. Four other approximate models of the TB diode are compared with the two-carrier model, and the range of their validity established. A high-gain TB "transistor" is proposed based on the mechanism of barrier-height modulation via minority-carrier injection in the TB diode.     

Electromagnetic model of a radial-resonator waveguide diode mount

An electromagnetic model of a class of waveguide diode mounts that incorporates a radial resonator with the diode arbitrarily positioned is derived. The model is tested through comparison of numerical and experimental results for the input impedance of the mount. The tests show good agreement between theory and experiment and indicate that the model may be especially useful in investigating the effects of an off-centered positioning of the diode