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Substrate coupling may severely degrade the electrical performances of high-speed and RF integrated circuits. An isolation technique study of parasitic effects due to substrate coupling between two blocks of integrated circuits in an RF CMOS 90 nm technology is presented. Isolation performances are compared for both bulk silicon (Si) and silicon-on-insulator (SOI) substrate. For every substrate, a compact electrical model matching well with measurement results is proposed for test structures composed of 50times50 mum cells surrounded with an appropriate guard ring. An isolation improvement of 10 dB is reached by an additional P-type guard ring placed around one cell and an isolation level of 45 dB is achieved at 1 GHz for bulk Si substrate 相似文献
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6‐GHz‐to‐18‐GHz AlGaN/GaN Cascaded Nonuniform Distributed Power Amplifier MMIC Using Load Modulation of Increased Series Gate Capacitance
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A 6‐GHz‐to‐18‐GHz monolithic nonuniform distributed power amplifier has been designed using the load modulation of increased series gate capacitance. This amplifier was implemented using a 0.25‐μm AlGaN/GaN HEMT process on a SiC substrate. With the proposed load modulation, we enhanced the amplifier's simulated performance by 4.8 dB in output power, and by 13.1% in power‐added efficiency (PAE) at the upper limit of the bandwidth, compared with an amplifier with uniform gate coupling capacitors. Under the pulse‐mode condition of a 100‐μs pulse period and a 10% duty cycle, the fabricated power amplifier showed a saturated output power of 39.5 dBm (9 W) to 40.4 dBm (11 W) with an associated PAE of 17% to 22%, and input/output return losses of more than 10 dB within 6 GHz to 18 GHz. 相似文献
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Byoung Gun Choi Seok‐Bong Hyun Geum‐Young Tak Hee‐Tae Lee Seong‐Su Park Chul Soon Park 《ETRI Journal》2005,27(5):579-584
A CMOS direct‐conversion mixer with a single transistor‐level topology is proposed in this paper. Since the single transistor‐level topology needs smaller supply voltage than the conventional Gilbert‐cell topology, the proposed mixer structure is suitable for a low power and highly integrated RF system‐on‐a‐chip (SoC). The proposed direct‐conversion mixer is designed for the multi‐band ultra‐wideband (UWB) system covering from 3 to 7 GHz. The conversion gain and input P1dB of the mixer are about 3 dB and ?10 dBm, respectively, with multi‐band RF signals. The mixer consumes 4.3 mA under a 1.8 V supply voltage. 相似文献
5.
Jong‐Min Lee Woo‐Jin Chang Dong Min Kang Byoung‐Gue Min Hyung Sup Yoon Sung‐Jae Chang Hyun‐Wook Jung Wansik Kim Jooyong Jung Jongpil Kim Mihui Seo Sosu Kim 《ETRI Journal》2020,42(4):549-561
We developed a 0.1‐μm metamorphic high electron mobility transistor and fabricated a W‐band monolithic microwave integrated circuit chipset with our in‐house technology to verify the performance and usability of the developed technology. The DC characteristics were a drain current density of 747 mA/mm and a maximum transconductance of 1.354 S/mm; the RF characteristics were a cutoff frequency of 210 GHz and a maximum oscillation frequency of 252 GHz. A frequency multiplier was developed to increase the frequency of the input signal. The fabricated multiplier showed high output values (more than 0 dBm) in the 94 GHz–108 GHz band and achieved excellent spurious suppression. A low‐noise amplifier (LNA) with a four‐stage single‐ended architecture using a common‐source stage was also developed. This LNA achieved a gain of 20 dB in a band between 83 GHz and 110 GHz and a noise figure lower than 3.8 dB with a frequency of 94 GHz. A W‐band image‐rejection mixer (IRM) with an external off‐chip coupler was also designed. The IRM provided a conversion gain of 13 dB–17 dB for RF frequencies of 80 GHz–110 GHz and image‐rejection ratios of 17 dB–19 dB for RF frequencies of 93 GHz–100 GHz. 相似文献
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This paper presents a fully integrated 0.13 μm CMOS MB‐OFDM UWB transmitter chain (mode 1). The proposed transmitter consists of a low‐pass filter, a variable gain amplifier, a voltage‐to‐current converter, an I/Q up‐mixer, a differential‐to‐single‐ended converter, a driver amplifier, and a transmit/receive (T/R) switch. The proposed T/R switch shows an insertion loss of less than 1.5 dB and a Tx/Rx port isolation of more than 27 dB over a 3 GHz to 5 GHz frequency range. All RF/analog circuits have been designed to achieve high linearity and wide bandwidth. The proposed transmitter is implemented using IBM 0.13 μm CMOS technology. The fabricated transmitter shows a ?3 dB bandwidth of 550 MHz at each sub‐band center frequency with gain flatness less than 1.5 dB. It also shows a power gain of 0.5 dB, a maximum output power level of 0 dBm, and output IP3 of +9.3 dBm. It consumes a total of 54 mA from a 1.5 V supply. 相似文献
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Seongdo Kim Janghong Choi Joohyun Lee Bontae Koo Cheonsoo Kim Nakwoong Eum Hyunkyu Yu Heebum Jung 《ETRI Journal》2011,33(6):969-972
This letter presents a CMOS RF front‐end operating in a subthreshold region for low‐power Band‐III mobile TV applications. The performance and feasibility of the RF front‐end are verified by integrating with a low‐IF RF tuner fabricated in a 0.13‐μm CMOS technology. The RF front‐end achieves the measured noise figure of 4.4 dB and a wide gain control range of 68.7 dB with a maximum gain of 54.7 dB. The power consumption of the RF front‐end is 13.8 mW from a 1.2 V supply. 相似文献
8.
Ping-Chun Yeh Hwann-Kaeo Chiou Chwan-Ying Lee Yeh J. Tang D. Chern J. 《Electron Device Letters, IEEE》2008,29(3):255-258
In this letter, four substrate noise isolation structures in standard 0.18-mum SiGe bipolar CMOS technology were investigated using S-parameter measurements. The experimental and simulated results on different isolation structures, such as triple-well p-n junction isolated walls, deep trench isolation, and double P+ guard-ring structures, are presented. Each element in the equivalent circuits has been calculated or fitted based on the parasitic resistance, capacitance, and physical dimensions using the device simulator MEDICI and the measured results of the test patterns. The proposed structure B significantly reduced substrate noise below -70 dB up to 20 GHz. The proposed structure C with an extra triple-well junction achieved the best isolation at the lower frequency range, in which |S21| was less than -71 dB from 50 MHz to 10.05 GHz, and -56 dB from 10.05 to 20.05 GHz. The measured results showed an excellent agreement with the calculations. Structure B is good enough and is recommended for a general-purpose RF circuit design, whereas structure C can be used in a highly sensitive RF circuit block below 10 GHz. 相似文献
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This letter presents a power amplifier (PA) with an on‐chip power detector for 2.4‐GHz wireless local area network application. The power detector consists of a clamp circuit, a diode detector, and a coupled line directional coupler. A series inductor for an output matching network in the PA is combined with a through line of the coupler, which reduces the coupling level. Therefore, the coupler employs a metamaterial‐based transformer configuration to increase coupling. The amount of coupling is increased by 2.5 dB in the 1:1 symmetric transformer structure and by 4.5 dB from two metamaterial units along the coupled line. 相似文献
10.
A small‐sized (15 mm×30 mm) planar monopole MIMO antenna that offers high‐isolation performance is presented in this letter. The antenna is miniaturized using inductive coupling within a meander‐line radiator and capacitive coupling between a radiator and an isolator. High isolation is achieved by a T‐shaped stub attached to the ground plane between two radiators, which also contributes to the small size using a folded structure and the capacitive coupling with radiators. The proposed antenna operates for the WLAN band within 2.4 GHz to 2.483 GHz. The measured isolation (S21) is about –30 dB, and the envelope correlation coefficient is less than 0.1. 相似文献
11.
Pun A.L.L. Yeung T. Lau J. Clement J.R. Su D.K. 《Solid-State Circuits, IEEE Journal of》1998,33(6):877-884
While precious studies on substrate coupling focused mostly on noise induced through drain-bulk capacitance, substrate coupling from planar spiral inductors at radiofrequency (RF) via the oxide capacitance has not been reported. This paper presents the experimental and simulation results of substrate noise induced through planar inductors. Experimental and simulation results reveal that isolation between inductor and noise source is less than -30 dB at 1 GHz. Separation by distance reduces coupling by less than 2 dB in most practical cases. Practical examples reveal an obstacle in integrating RF tuned-gain amplifier with sensitive RF receiver circuits on the same die. Simulation results indicate that hollow inductors have advantages not only in having a higher self-resonant frequency, but also in reducing substrate noise as compared to conventional inductors. The effectiveness of using a broken guard ring in reducing inductor induced substrate noise is also examined 相似文献
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《Solid-State Circuits, IEEE Journal of》2006,41(9):2040-2051
Substrate noise generated by the digital circuits on a mixed-signal IC can severely disturb the analog and RF circuits sharing the same substrate. Simulations at the circuit level of the substrate noise coupling in large systems-on-chip (SoCs) do not provide the necessary understanding in the problem. Analysis at a higher level of abstraction gives much more insight in the coupling mechanisms. This paper presents a physical model to estimate and understand the substrate noise generation by a digital modem, the propagation of this noise and the resulting performance degradation of LC tank VCOs. The proposed linearized model is fast to derive and to evaluate, while remaining accurate. It is validated with measurements on two test structures: a reference design and a design with a$hboxp^+ $ /n-well (digital) guard ring. Both structures contain a functional 40k gate digital modem and a 0.18$muhbox m$ 3.5 GHz CMOS LC-VCO on a lightly-doped substrate. In both cases, the model accurately predicts the level of the spurious components appearing at the VCO output due to the digital switching activity. The error remains smaller than 3 dB. Finally, we demonstrate how the proposed model enables a systematic and controlled isolation strategy to suppress substrate noise coupling problems. As an example, the model is used to determine suitable dimensions for a digital guard ring. 相似文献
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A D‐band subharmonically‐pumped resistive mixer has been designed, processed, and experimentally tested. The circuit is based on a 180° power divider structure consisting of a Lange coupler followed by a λ/4 transmission line (at local oscillator (LO) frequency). This monolithic microwave integrated circuit (MMIC) has been realized in coplanar waveguide technology by using an InAlAs/InGaAs‐based metamorphic high electron mobility transistor process with 100‐nm gate length. The MMIC achieves a measured conversion loss between 12.5 dB and 16 dB in the radio frequency bandwidth from 120 GHz to 150 GHz with 4‐dBm LO drive and an intermediate frequency of 100 MHz. The input 1‐dB compression point and IIP3 were simulated to be 2 dBm and 13 dBm, respectively. 相似文献
14.
《Microwave and Wireless Components Letters, IEEE》2006,16(8):467-469
In this letter, we present a high performance 94-GHz millimeter-wave monolithic integrated circuit resistive mixer using a 70-nm metamorphic high electron mobility transistor (MHEMT) and micromachined ring coupler. A novel three-dimensional structure of a resistive mixer was proposed in this work, and the ring coupler with the surface micromachined dielectric-supported air-gap microstrip line structure was used for high local oscillator/radio frequency (LO–RF) isolation. Also, the LO–RF isolation was optimized through the simulation. The fabricated mixer has excellent LO–RF isolation, greater than 29 dB, in 2-GHz bandwidth of 93–95GHz. The good conversion loss of 8.9dB was measured at 94GHz. To our knowledge, compared to previously reported W-band mixers, the proposed MHEMT-based resistive mixer using a micromachined ring coupler has shown superior LO–RF isolation and conversion loss. 相似文献
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《Microwave and Wireless Components Letters, IEEE》2009,19(9):557-559
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Geon Jeong Donghoon Kim Junseok Choi Donghwan Lee Mahn‐Yong Park Jin‐Bong Kim Hyung Jong Lee Hyun‐Yong Lee 《ETRI Journal》2005,27(1):89-94
This paper describes a low‐loss, compact, 40‐channel arrayed waveguide grating (AWG) which utilizes a monolithically integrated spot‐size converter (SSC) for lowering the coupling loss between silica waveguides and standard single‐mode fibers. The SSC is a simple waveguide structure that is tapered in both the vertical and horizontal directions. The vertically tapered structure was realized using a shadow‐mask etching technique. By employing this technique, the fabricated, 40‐channel, 100 GHz‐spaced AWG with silica waveguides of 1.5% relative index‐contrast showed an insertion‐loss figure of 2.8 dB without degrading other optical performance. 相似文献
17.
Thick metal 0.8 µm CMOS technology on high resistivity substrate (RF CMOS technology) is demonstrated for the L-band RF IC applications, and we successfully implemented it to the monolithic 900 MHz and 1.9 GHz CMOS LNAs for the first time. To enhance the performance of the RF circuits, MOSFET layout was optimized for high frequency operation and inductor quality was improved by modifying the technology. The fabricated 1.9 GHz LNA shows a gain of 15.2 dB and a NF of 2.8 dB at DC consumption current of 15 mA that is an excellent noise performance compared with the off-chip matched 1.9 GHz CMOS LNAs. The 900 MHz LNA shows a high gain of 19 dB and NF of 3.2 dB despite of the performance degradation due to the integration of a 26 nH inductor for input match. The proposed RF CMOS technology is a compatible process for analog CMOS ICs, and the monolithic LNAs employing the technology show a good and uniform RF performance in a five inch wafer. 相似文献
18.
A novel application of a dual‐transmission line is proposed to design a lowpass filter (LPF). The proposed structure uses only transmission line elements to produce an equiripple LPF response with sharp roll‐off. Design equations are derived using a lossless transmission line model. Controlling the electrical lengths, three transmission‐zeros are realized in the stopband to obtain a sharp roll‐off rate and wide stopband bandwidth. A single unit microstrip LPF with a 3‐dB cut‐off frequency at 1.0 GHz having a roll‐off of 135 dB/GHz along with a stopband bandwidth of 69.5% is designed for validation. 相似文献
19.
Jae Yeob Shim Hyung‐Sup Yoon Dong Min Kang Ju Yeon Hong Kyung Ho Lee 《ETRI Journal》2005,27(6):685-690
DC and RF characteristics of 0.15 °m GaAs power metamorphic high electron mobility transistors (MHEMT) have been investigated. The 0.15 °m ° 100 °m MHEMT device shows a drain saturation current of 480 mA/mm, an extrinsic transconductance of 830 mS/mm, and a threshold voltage of ‐0.65 V. Uniformities of the threshold voltage and the maximum extrinsic transconductance across a 4‐inch wafer were 8.3% and 5.1%, respectively. The obtained cut‐off frequency and maximum frequency of oscillation are 141 GHz and 243 GHz, respectively. The 8 ° 50 °m MHEMT device shows 33.2% power‐added efficiency, an 18.1 dB power gain, and a 28.2 mW output power. A very low minimum noise figure of 0.79 dB and an associated gain of 10.56 dB at 26 GHz are obtained for the power MHEMT with an indium content of 53% in the InGaAs channel. This excellent noise characteristic is attributed to the drastic reduction of gate resistance by the T‐shaped gate with a wide head and improved device performance. This power MHEMT technology can be used toward 77 GHz band applications. 相似文献
20.
Dong‐Wook Kim 《ETRI Journal》2006,28(1):84-86
This letter presents a small‐sized, high‐power single‐pole double‐throw (SPDT) switch with defected ground structure (DGS) for wireless broadband Internet application. To reduce the circuit size by using a slow‐wave characteristic, the DGS is used for the quarter‐wave (°/4) transmission line of the switch. To secure a high degree of isolation, the switch with DGS is composed of shunt‐connected PIN diodes. It shows an insertion loss of 0.8 dB, an isolation of 50 dB or more, and power capability of at least 50 W at 2.3 GHz. The switch shows very similar performance to the conventional shunt‐type switch, but the circuit size is reduced by about 50% simply with the use of DGS patterns. 相似文献