Process study and optimization for fabrication of poly‐Si thin‐film transistors on plastic substrates

Abstract— A complete poly‐Si thin‐film transistor (TFT) on plastic process has been optimized to produce TFT arrays for active‐matrix displays. We present a detailed study of the poly‐Si crystallization process, a mechanism for protecting the plastic substrate from the pulsed laser used to crystallize the silicon, and a high‐performance low‐temperature gate dielectric film. Poly‐Si grain sizes and the corresponding TFT performance have been measured for a range of excimer‐laser crystallization fluences near the full‐melt threshold, allowing optimization of the laser‐crystallization process. A Bragg reflector stack has been embedded in the plastic coating layers; its effectiveness in protecting the plastic from the excimer‐laser pulse is described. Finally, we describe a plasma pre‐oxidation step, which has been added to a low‐temperature (<100°C) gate dielectric film deposition process to dramatically improve the electrical properties of the gate dielectric. These processes have been integrated into a complete poly‐Si TFT on plastic fabrication process, which produces PMOS TFTs with mobilities of 66 cm² /V‐sec, threshold voltages of ?3.5 V, and off currents of approximately 1 pA per micron of gate width.     

100‐MHz CMOS circuits directly fabricated on plastic using sequential laterally solidified silicon

Abstract— CMOS TFT circuits were fabricated on plastic using sequential laterally solidified silicon combined with a low‐temperature CMOS process. The unity‐gain frequencies of the best of NMOS TFTs are greater than 250 MHz, and the CMOS ring oscillators operate at 100 MHz. To the best of the authors' knowledge, these are the highest‐frequency circuits ever fabricated directly on plastic. This high‐performance CMOS‐on‐plastic process can be applied to the fabrication of AMLCD integrated drivers and AMOLED pixels on plastic substrates.     

Low‐temperature amorphous‐silicon backplane technology development for flexible displays in a manufacturing pilot‐line environment

Abstract— A low‐temperature amorphous‐silicon (a‐Si:H) thin‐film‐transistor (TFT) backplane technology for high‐information‐content flexible displays has been developed. Backplanes were integrated with frontplane technologies to produce high‐performance active‐matrix reflective electrophoretic ink, reflective cholesteric liquid crystal and emissive OLED flexible‐display technology demonstrators (TDs). Backplanes up to 4 in. on the diagonal have been fabricated on a 6‐in. wafer‐scale pilot line. The critical steps in the evolution of backplane technology, from qualification of baseline low‐temperature (180°C) a‐Si:H process on the 6‐in. line with rigid substrates, to transferring the process to flexible plastic and flexible stainless‐steel substrates, to form factor scale‐up of the TFT arrays, and finally manufacturing scale‐up to a Gen 2 (370 × 470 mm) display‐scale pilot line, will be reviewed.     

Development of 8‐in. oxide‐TFT‐driven flexible AMOLED display using high‐performance red phosphorescent OLED

An 8‐in. flexible active‐matrix organic light‐emitting diode (AMOLED) display driven by oxide thin‐film transistors (TFTs) has been developed. In‐Ga‐Zn‐O (IGZO)‐TFTs used as driving devices were fabricated directly on a plastic film at a low temperature below 200 °C. To form a SiO_x layer for use as the gate insulator of the TFTs, direct current pulse sputtering was used for the deposition at a low temperature. The fabricated TFT shows a good transfer characteristic and enough carrier mobility to drive OLED displays with Video Graphic Array pixels. A solution‐processable photo‐sensitive polymer was also used as a passivation layer of the TFTs. Furthermore, a high‐performance phosphorescent OLED was developed as a red‐light‐emitting device. Both lower power consumption and longer lifetime were achieved in the OLED, which used an efficient energy transfer from the host material to the guest material in the emission layer. By assembling these technologies, a flexible AMOLED display was fabricated on the plastic film. We obtained a clear and uniform moving color image on the display.     

In‐pixel temperature sensor for high‐luminance active matrix micro‐light‐emitting diode display using low‐temperature polycrystalline silicon and oxide thin‐film‐transistors

We propose an in‐pixel temperature sensor using low‐temperature polycrystalline silicon and oxide (LTPO) thin‐film transistor (TFTs) for high‐luminance active matrix (AM) micro‐light‐emitting diode (LED) displays. By taking advantage of the different off‐current characteristics of p‐type LTPS TFTs and n‐type a‐IGZO TFTs under temperature change, we designed and fabricated a temperature sensor consists of only LTPO TFTs without additional sensing component or material. The fabricated sensor exhibits excellent temperature sensitivity of up to 71.8 mV/°C. In addition, a 64 × 64 temperature sensor array with 3T sensing pixel and integrated gate driver has also been fabricated, which demonstrates potential approach for maxing out the performance of high‐luminance AM micro‐LED display with real‐time in‐pixel temperature monitoring.     

Liquid‐crystal displays using printed plastic TFT backplanes

Abstract— In this paper, we present results from a new liquid crystal over plastic printed thin‐film‐transistor (TFT) display. The display demonstrator shows that the processing incompatibilities between the plastic TFT backplane and the liquid‐crystal materials can be addressed to make a stable twisted‐nematic structure. New fabrication processes such as the photo‐alignment of liquid crystals have made it possible to create a new generation of displays, which pave the way towards fully integrated plastic liquid‐crystal‐display technologies.     

Sphere‐supported thin‐film electroluminescence: A new platform technology for displays and lighting

Abstract— Currently, powder electroluminescence is used for low‐brightness flexible lamps offering durable plastic‐based lighting solutions principally for low‐ambient light conditions where lighting or backlighting is required. Sphere‐supported thin‐film electroluminescence (SSTFEL) promises dramatic new capability in both flexible lamps and displays owing to its high brightness and long‐life capability. SSTFEL is based on robust thin‐film phosphors deposited on spherical ceramic dielectric particles which are embedded in a thin plastic sheet. A printing approach permits versatile, low‐cost manufacturing of patterned SSTFEL devices and eliminates the need for high‐temperature substrates.     

AMOLED displays with transfer‐printed integrated circuits

Abstract— Small integrated circuits of crystalline silicon (chiplets) transfer‐printed onto a flat‐panel‐display substrate provide greatly improved electrical performance and uniformity in active‐matrix organic light‐emitting‐diode (OLED) displays. The integrated circuits are formed in high‐performance crystalline silicon using conventional photolithographic processes and then transfer‐printed onto a substrate using a stamp that transfers hundreds or thousands of chiplets at once. The chiplets are connected to an external controller and to pixel elements using conventional photolithographic substrate processing methods. Active‐matrix OLED (AMOLED) displays using transfer‐printed chiplets have good yields, excellent uniformity, and electrical performance and are thermally robust.     

Wafer‐scale monolithic hybrid integration of Si‐based IC and III–V epi‐layers—A mass manufacturable approach for active matrix micro‐LED micro‐displays

Hybridization of silicon integrated circuits (ICs) with compound semiconductor device arrays are crucial for making functional hybrid chips, which are found to have enormous applications in many areas. Although widely used in manufacturing hybrid chips, the flip‐chip technology suffers from several limitations that are difficult to overcome, especially when the demand is raised to make functional hybrid chips with higher device array density without sacrificing the chip footprint. To address those issues, Beida Jade Bird Display Limited has developed its unique wafer‐level monolithic hybrid integration technology and demonstrated its advantages in making large‐scale hybrid integration of functional device arrays on Si IC wafers. Active matrix micro‐light‐emitting diode micro‐displays with a resolution of 5000+ pixel per inch were successfully fabricated using Beida Jade Bird Display Limited's monolithic hybrid integration technology. The general fabrication method is described, and the result is presented in this paper. The fabricated monochromatic micro‐light‐emitting diode micro‐displays exhibit improved device performance than do other micro‐display technologies and have great potentials in applications such as portable projectors and near‐to‐eye projection for augmented reality. More importantly, the wafer‐scale monolithic hybrid integration technology offers a clear path for low‐cost mass production of hybrid optoelectronic IC chips.     

Flexible microelectronics: New application for thin‐film transistors in fingerprint sensors

Abstract— Thin‐film transistors (TFTs) are field‐effect transistors that can be used to create large‐scale‐integrated (LSI) circuits. The combination of high‐performance TFTs and transfer technology of the TFTs has the potential to foster the rise of a new flexible microelectronics industry. This paper discusses the current status of flexible microelectronics, using a TFT fingerprint sensor (FPS) as an example. Technology used in active‐matrix displays can easily be applied to the TFT FPS. TFT technology should not be confined to the display industry; its use should be expanded into the semiconductor industry. With the result presented in this paper, we declare a new era of flexible microelectronics open.     

A4‐sized flexible ferroelectric liquid‐crystal displays with micro color filters

Abstract— We demonstrated an A4‐paper‐sized flexible ferroelectric liquid‐crystal (FLC) color displays fabricated by using a new plastic‐substrate‐based process which was developed for large‐sized devices. Finely patterned color filters and ITO electrodes were formed on a plastic substrate by a transfer method to avoid surface roughness and thermal distortion of the substrate, which induce disordering of the FLC molecular alignment. The thickness of an FLC/monomer solution sandwiched by two plastic‐film substrates was well controlled over a large area by using flexographic printing and lamination techniques. Molecular‐aligned polymer walls and fibers were formed in the FLC by a two‐step photopolymerization‐induced phase‐separation method using UV‐light irradiation. A fabricated A4‐sized flexible‐sheet display for color‐segment driving was able to exhibit color images even when it was bent.     

Development of a color‐tunable polychromatic organic‐light‐emitting‐diode device for roll‐to‐roll manufacturing

A flexible vertically stacked flexible polychromatic color‐tunable OLED has been developed by means of low resistive intermediate electrode technology. The polychromatic OLED has a capability to show 16 million colors with 105% National Television Committee Standard (NTSC) color reproduction. The device can produce arbitrary shape with arbitrary colors, suitable for artistic expressions, just as many as those used in information displays. Independently controlled red, green, and blue light‐emitting layers are stacked vertically. With conventional indium tin oxide technology, because of the temperature restriction, it was quite difficult to achieve low resistance on plastic substrate. The reported numbers were all more than 80 Ω/□. According to the surface mobility control using Fick's law analysis, low sheet resistance 7.34 Ω/□ on plastic film was developed. At first, flexible 7.17 cm² transparent OLED was fabricated for the performance confirmation of transparent electrode. And then polychromatic color‐tunable OLED with the same size were successfully fabricated on plastic. With optical length optimization for each color stack of polychromatic OLED, more than 100% color reproduction in National Television Committee Standard was achieved by stack design. The polychromatic device can be used for colored illumination, as well as for organic‐light‐emitting display pixels for three times emission than conventional pixel design. The device is fabricated on plastic substrate so that the polychromatic organic‐light‐emitting‐diode device is manufacturable with roll‐to‐roll production line.     

A small‐area and low‐power data driver IC using two‐stage DAC with a capacitor array for active matrix flat‐panel displays

A small‐area and low‐power data driver integrated circuit (IC) using a two‐stage digital‐to‐analog converter (DAC) with a capacitor array is proposed for active matrix flat‐panel displays. The proposed data driver IC employs a capacitor array in the two‐stage DAC so as to reduce the DAC area and eliminate the need for a resistor string, which has high‐power consumption. To verify the proposed two‐stage DAC, a 20‐channel data driver IC with the proposed 10‐bit two‐stage DAC was fabricated using a 0.18‐μm complementary metal–oxide–semiconductor process with 1.8 and 6 V complementary metal–oxide–semiconductor devices. The proposed 10‐bit two‐stage DAC occupies only 43.8% of the area of a conventional 10‐bit two‐stage DAC. The measurement results show that the differential nonlinearity and integral nonlinearity are +0.58/?0.52 least significant bit and +0.62/?0.59 least significant bit, respectively. The measured interchannel deviation of the voltage outputs is 8.8 mV, and the measured power consumption of the 20‐channel data driver IC is reduced to 7.1 mW, which is less than half of the power consumed by the conventional one.     

Review of operating principle and performance of polarizer‐free reflective liquid‐crystal displays

Abstract— In this paper the operational principle and performance of guest‐host, liquid‐crystal/polymer‐composite scattering, and cholesteric liquid‐crystal reflective displays are reviewed. These displays do not use polarizers and have the advantage of providing high reflectance and compatibility with flexible plastic substrates.     

Current and future technology of low‐temperature poly‐Si TFT‐LCDs

Abstract— The state of the art of large‐area low‐temperature TFT‐LCDs will be reported in this paper. High‐performance poly‐Si TFTs are expected to realize various applications such as system display where various signal‐processing functions are added to the display. In the past few years, low‐temperature poly‐Si thin‐film‐transistor (LTPS TFT) technology has made great progress, especially in the areas of excimer laser annealing (ELA) of high‐quality poly‐Si film, ion doping for large‐area doping, and high‐quality gate SiO₂ film formation by using the low‐temperature PE‐CVD method. Also, technology trends and possible applications, such as a system displays, will be discussed.     

Temporary bond—debond technology for high‐performance transistors on flexible substrates

Abstract— A processing technology based upon a temporary bond—debond approach has been developed that enables direct fabrication of high‐performance electronic devices on flexible substrates. This technique facilitates processing of flexible plastic and metal‐foil substrates through automated standard semiconductor and flat‐panel tool sets without tool modification. The key to processing with these tool sets is rigidifying the flexible substrates through temporary bonding to carriers that can be handled in a similar manner as silicon wafers or glass substrates in conventional electronics manufacturing. To demonstrate the power of this processing technology, amorphous‐silicon thin‐film‐transistor (a‐Si:H TFT) backplanes designed for electrophoretic displays (EPDs) were fabricated using a low‐temperature process (180°C) on bonded‐plastic and metal‐foil substrates. The electrical characteristics of the TFTs fabricated on flexible substrates are found to be consistent with those processed with identical conditions on rigid silicon wafers. These TFTs on plastic exhibit a field‐effect mobility of 0.77 cm²/V‐sec, on/off current ratio >10⁹ at Vds = 10 V, sub‐threshold swing of 365 mV/dec, threshold voltage of 0.49 V, and leakage current lower than 2 pA/μm gate width. After full TFT‐array fabrication on the bonded substrate and subsequent debonding, the flexible substrate retains its original flexibility; this enables bending of the EPD display without loss in performance.     

Color plastic bistable nematic display fabricated by imprint and ink‐jet technology

Abstract— Plastic displays require new manufacturing processes and techniques to achieve acceptable cost and performance. A novel additive, low‐temperature atmospheric‐pressure self‐aligned means of fabricating integrated plastic substrates for full‐color LCDs and a bistable LC mode based on microstructure alignment are presented. By using imprinting rather than photolithographic patterning, a scalable, low‐cost manufacturing route is possible. A 2‐in.‐diagonal 128 × 128‐pixel display was made to demonstrate the principles involved, which has retained an image for in excess of 2 years.     

Amorphous‐silicon thin‐film transistors made at 280°C on clear‐plastic substrates by interfacial stress engineering

Abstract— A process temperature of ～300°C produces amorphous‐silicon (a‐Si) thin‐film transistors (TFTs) with the best performance and long‐term stability. Clear organic polymers (plastics) are the most versatile substrate materials for flexible displays. However, clear plastics with a glass‐transition temperature (T_g) in excess of 300°C can have coefficients of thermal expansion (CTE) much larger than that of the silicon nitride (SiN^x) and a‐Si in TFTs deposited by plasma‐enhanced chemical vapor deposition (PECVD). The difference in the CTE that may lead to cracking of the device films can limit the process temperature to well below that of the T_g of the plastic. A model of the mechanical interaction of the TFT stack and the plastic substrate, which provides design guidelines for avoid cracking during TFT fabrication, is presented. The fracture point is determined by a critical interfacial stress. The model was used to successfully fabricate a‐Si TFTs on novel clear‐plastic substrates with a maximum process temperature of up to 280°C. The TFTs made at high temperatures have higher mobility, lower leakage current, and higher stability than TFTs made on conventional low‐T_g clear‐plastic substrates.     

PECVD‐based nanocrystalline‐silicon TFT backplanes for large‐sized AMOLED displays

Abstract— A 14.1‐in. AMOLED display using nanocrystalline silicon (nc‐Si) TFTs has been developed. Nanocrystalline silicon was deposited using conventional 13.56‐MHz plasma‐enhanced chemical vapor deposition (PECVD). Detailed thin‐film characterization of nc‐Si films was followed by development of nc‐Si TFTs, which demonstrate a field‐effect mobility of about 0.6–1.0 cm²/V‐sec. The nc‐Si TFTs show no significant shift in threshold voltage when over 700 hours of constant current stress is applied, indicating a stable TFT backplane. The nc‐Si TFTs were successfully integrated into a 14.1‐in. AMOLED display. The display shows no significant current decrease in the driving TFT of the 2T‐1cap circuit because the TFTs are highly stable. In addition to the improved lifetime of AMOLED displays, the development of nc‐Si TFTs using a conventional 13.56‐MHz PECVD system offers considerable cost advantages over other laser and non‐laser polysilicon‐TFT technologies for large‐sized AMOLEDs.     

Contrast‐enhanced wide‐angle high‐speed polarization modulator for active‐retarder 3‐D displays

Abstract— A contrast‐enhanced wide‐angle high‐speed polarization modulator for active‐retarder 3‐D displays is proposed. By using a double liquid‐crystal‐cell structure together with a dedicated driving scheme and an external quarter‐wave retarder, a high‐performance modulator can be realized, resulting in minimized brightness loss and low cross‐talk levels in fast‐refresh time‐multiplexed 3‐D displays.