PCR生物芯片微反应腔的制作及其热分析

在PCR生物芯片的制作过程中，微反应腔制作是关键部分之一。本文利用硅基微机械加工工艺，分别采用湿法化学腐蚀、干法等离子体刻蚀及两者相结合的方法进行了微反应腔的制作。通过扫描电镜分析，证明干法和湿法腐蚀相结合的制作工艺能加工出较理想的微反应腔体。本文还利用ANSYS软件对微反应腔进行温度分布和热特性分析。     

PCR生物芯片微反应腔的制作及其热分析

在PCR生物芯片的制作过程中,微反应腔制作是关键部分之一.本文利用硅基微机械加工工艺,分别采用湿法化学腐蚀、干法等离子体刻蚀及两者相结合的方法进行了微反应腔的制作.通过扫描电镜分析,证明干法和湿法腐蚀相结合的制作工艺能加工出较理想的微反应腔体.本文还利用ANSYS软件对微反应腔进行温度分布和热特性分析.     

PCR生物芯片微反应腔的制作及其热分析

在PCR生物芯片的制作过程中 ,微反应腔制作是关键部分之一。本文利用硅基微机械加工工艺 ,分别采用湿法化学腐蚀、干法等离子体刻蚀及两者相结合的方法进行了微反应腔的制作。通过扫描电镜分析 ,证明干法和湿法腐蚀相结合的制作工艺能加工出较理想的微反应腔体。本文还利用ANSYS软件对微反应腔进行温度分布和热特性分析。     

阵列式场致发射结构的电特性

我们报道了湿法腐蚀的阵列式硅场致发射锥尖的实验结果。给出了Ⅰ-Ⅴ测试结果和角分辨的电子发射能谱。我们发现场致发射发生在具有极小曲率半径的有效表面积中的很小一部分。能谱仪测定的结果表明了硅中在低于费米能级以下几电子伏的地方产生发射,并给出了△E=0.28eV的半高宽(FWHM)。     

硅微机械加工技术

微机械的全称为微电子机械系统，是以微电子技术和微加工技术为基础的一项新技术。目前主要应用的是硅微加工方法。本书着重介绍了硅微加工技术中应用的各种方法，包括各向异性湿法化学腐蚀、硅片键合、表面微机械加工、硅的各向同性湿法化学腐蚀、微机械加工技术中干法等离子刻蚀技术、远程等离子腐蚀、高深宽比沟槽腐蚀、微型结构的铸模等内容。     

硅的等离子体深腐蚀

湿法化学腐蚀已被广泛地应用于敏感器件传感结构的微细加工中.近年来,在VLSI中等离子体干法腐蚀已成为获得细线条图形的可行技术.然而,干法腐蚀工艺无论是等离子体腐蚀或反应离子腐蚀,相对于湿法腐蚀来说都是比较慢的.在需要深腐蚀的应用中(如电子束光刻的对准符号刻蚀,电路隔离槽或敏感器件的微细结构腐蚀)当前都着力提高腐蚀速率.在传感器的开发中,主要问题之一是封装,为简化到处于测量环境的传感器的外部连接,希望通过传感器背面进行连接.在化学传感器中,背面连接最为有利.因为假如所有的引线都     

反应离子刻蚀InSb芯片引入的损伤研究

应用CH₄/H₂/Ar作为刻蚀气源对InSb微台面阵列进行了反应离子刻蚀,并对刻蚀后引入的损伤进行了分析。实验证实利用干法刻蚀与湿法腐蚀相结合的方法能有效地减少刻蚀引入的缺陷和损伤,获得较好的电学特性,达到低损伤刻蚀InSb材料的目的。     

大屏幕场致发射显示器薄膜型精细金属电极的研制

在洁净的玻璃基底溅射Cr-Cu-Cr复合薄膜,利用光刻和湿法刻蚀技术制备了大屏幕场致发射显示器薄膜型精细金属电极.讨论了不同腐蚀液对金属Cr刻蚀的影响,借助视频显微镜和台阶仪测试刻蚀后的电极形貌,结果表明,用质量比为6∶3∶100的KMnO4、NaOH和H2O的混合液腐蚀Cr膜的刻蚀速率平稳,刻蚀后的Cr电极边缘整齐,内向侵蚀少.此外,分析了FeCl3刻蚀液对Cu膜的刻蚀机理,讨论了刻蚀液在静置和循环条件下对制备FED薄膜型精细电极的影响,借助视频显微镜测试刻蚀后的电极形貌,结果表明,FeCl3刻蚀液在循环条件下刻蚀Cu膜速度均匀,刻蚀后电极边缘整齐.     

等离子刻蚀制造硅场发射阵列

本文介绍了一种全干法二步刻蚀制造高发射效率的场发射阵列（ＦｉｅｌｄＥｍｉｔｔｅｒＡｒｒａｒｙ－ＦＥＡ）的方法。首先利用等离子刻蚀（ＰｌａｓｍａＥｔｃｈｉｎｇ－ＰＥ）的各向同性在由ＳｉＯ２掩模的硅衬底上刻出平顶尖锥，然后再利用反应离子刻蚀（ＲｅａｃｔｉｖｅＩｏｎＥｔｃｈｉｎｇ－ＲＩＥ）的各向异性，在ＰＥ的基础上进一步刻蚀来拔高尖锥并减少尖锥顶部的面积，以得到理想形状的ＦＥＡ尖锥。这种方法比ＲＩＥ一步刻蚀法和湿法刻蚀加ＲＩＥ二步法简单可靠。     

应用于LCD的平栅型碳纳米管场致发射显示器背光源的研制

采用磁控溅射、光刻和湿法刻蚀技术制备平栅型场发射阴极阵列,利用电泳将碳纳米管(CNT)发射源沉积在阴极表面,将阴极板和阳极板封接后制成51cm单色平栅型CNT场致发射显示器(CNT-FED),作为背光源模板应用于49 cm液晶显示器(LCD)器件中.场发射测试表明,器件在阳极电压3 500V、栅极电压290 V时,阳极...     

Transferring of GaAs microtips using selective wet etching Al0.7Ga0.3As sacrificial layer

GaAs pyramidal microtips were successfully transferred from GaAs substrate to target wafer by a simple technique, i.e., selective wet etching off AlGaAs sacrificial layer. A GaAs/Al_0.7Ga_0.3As/GaAs sandwich structure is firstly formed on GaAs (0 0 1) substrate by metalorganic chemical vapor deposition, and then GaAs pyramidal microtips are grown on the sandwich structure using selective liquid-phase epitaxy. The GaAs microtips are removed from the sandwich structure by selective wet etching Al_0.7Ga_0.3As layer using concentrated HCl solution. Finally, the tips are glued onto the target wafer by a negative photoresist. During this transfer process the tips are completely encapsulated in a positive photoresist to protect against attack. Scanning electron microscopy images show that GaAs tips can be successfully transferred without any damage by this technique. The achievement reported here represents a significant step towards the application of scanning near-field optical microscopy.     

Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays

Ｌｏｗｄｉｍｅｎｓｉｏｎａｌｓｔｒｕｃｔｕｒｅｓ,ｓｕｃｈａｓｑｕａｎｔｕｍｗｅｌｌ（ＱＷ）,ｑｕａｎｔｕｍｗｉｒｅ（ＱＷＲ）ａｎｄｑｕａｎｔｕｍｄｏｔ（ＱＤ）ｈａｖｅａｔｔｒａｃｔｅｄｍｏｒｅａｎｄｍｏｒｅａｔｔｅｎｔｉ...     

硅场发射微尖阵列的制备工艺研究

主要阐述了用于场发射硅锥阵列的制备工艺,实验中在101.6mm(4in)的n型(100)晶向低阻硅片上氧化出一层厚度约为650nm的氧化层,再用投影曝光的方法光刻出边长2μm,间距4μm的方形掩膜。再分别使用反应离子刻蚀(RIE)技术和湿法刻蚀制备硅锥阵列,干法刻蚀并结合氧化削尖工艺得到了曲率半径为90nm左右且具有良好一致性的尖锥,湿法刻蚀同样得到较理想的结果。     

Simulation and design of field emitter array

Some simulation results about potential, field strength, and emitting current density of cone-shaped emitter arrays are presented. Several important design features about the field emitter array are discussed. The most striking feature is that if one wants to obtain more current from the field emitter array in a given device area, there is a limit to the density of the emitter array due to the emitter tip field strength lowering effect, which is a result of the interaction from nearby surrounding tips. If one reduces the tip radius to increase the field strength a higher current density is compensated by a reduced effective emitting area; therefore, to obtain the highest emitter current for a certain set of designed emitter array geometric parameters a corresponding optimal tip radius needs to be determined     

A novel method for etching trenches in silicon carbide

In this paper, a novel trench etching technique for silicon carbide is described. In this technique, ion implantation is used to first create an amorphous silicon carbide region. The amorphous layer is then etched away by wet chemical etching. Trenches of 0.3 to 0.8 μ have been obtained using a single implantaion/etching step. It has been demonstrated that deeper trenches can be obtained by repeating the implantation/etching step with platinum as a masking material. The etched surface was found to be smooth when compared with reactive ion etched surfaces reported for silicon carbide.     

InAs/GaSb台面结型器件制备工艺技术研究

随着红外探测技术的不断进步,第三代红外探测器的发展需求日渐明晰。由于带间跃迁工作原理、暗电流抑制效应以及成熟的材料制备技术基础等因素,InAs/GaSb超晶格材料已经成为了第三代红外焦平面探测器的首选制备材料。基于InAs/GaSb超晶格材料的台面结型焦平面器件制备方法主要包括湿法腐蚀技术、干法刻蚀技术以及干湿法结合技术。从文献调研结果来看,湿法腐蚀技术和干法刻蚀技术各有优缺点。湿法腐蚀技术适用于单元以及少像元面阵的制备,其中磷酸系腐蚀液的腐蚀效果最佳;干法刻蚀技术适用于大面阵、小尺寸焦平面阵列的制备,几种氯基刻蚀气体体系以及氯基与甲烷基组合的刻蚀气体体系都表现出了不错的刻蚀效果;干湿法结合技术在干法刻蚀后引入湿法腐蚀工艺以进一步消除刻蚀损伤,从而提高器件性能。对以上三种技术方案进行了介绍和分析。     

Application of Wet Chemical Etching in Fabrication Process of GaAs/AlGaAs Quantum Dot Arrays

Two types of GaAs/AlGaAs quantum dot arrays with different dot size are fabricated by dry etching and dry-wet etching. PL spectra of the quantum dot arrays at low temperature show the blue shifts due to the quantization confinement effects, and the blue-shift increases with the decrease of the dot size. It is also found that wet chemical etching can reduce the surface damage caused by high-energy ion etching and improve the optical characteristics of the quantum dot arrays.     

Demonstration of low voltage field emission

The authors describe field emission from a thin-film field emitter array. The process used to fabricate the field emitters is based on the mold technique described by H.F. Gray and R.F. Greene (US patent 4,307,507). Each emitter chip consists of a 10×10 square array of field emitter tips and associated lead bonding pads. There is a 10-μm spacing between emitter tips. The bare chips were packaged by mounting to an alumina substrate, four to eight chips per substrate. The chips were tested in a demountable vacuum system equipped with a movable anode. The testing apparatus makes it possible to accurately measure currents as low as 100 nA at low duty. Fowler-Nordhein-like current-voltage characteristics were measured for most of the chips tested, indicating field emission. Substantial emission currents were observed at less than 20 V. The emitted current was collected almost entirely at the anode: the measured gate current was 1 to 5% of the emitted current     

Inductively coupled plasma etching for large format HgCdTe focal plane array fabrication

Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large format 2048×2048, 20-μm unit-cell short wavelength infrared (SWIR) and 2560×512, 25-μm unit-cell midwavelength infrared (MWIR) double-layer heterojunction (DLHJ) p-on-n HgCdTe FPAs fabricated using ICP processing exhibit >99% pixel operability. The HgCdTe FPAs are grown by molecular beam epitaxy (MBE) on Si substrates with suitable buffer layers. Midwavelength infrared detectors fabricated from 4-in. MBE-grown HgCdTe/Si substrates using ICP for mesa delineation and CdTe passivation etching demonstrate measured spectral characteristics, RoA product, and quantum efficiency comparable to detectors fabricated using wet chemical processes. Mechanical samples prepared to examine physical characteristics of ICP reveal plasma with high energy and low ion angle distribution, which is necessary for fine definition, high-aspect ratio mesa etching with accurate replication of photolithographic mask dimensions.