浮动催化CVD法CNTs膜及CNTs膜/环氧复合材料拉伸特性

针对浮动催化化学气相沉积(CVD)法制备的碳纳米管(CNTs)膜,首先采用红外光谱表征分析了包覆在CNTs表面的无定形物质的组成,然后分别采用热处理和酸洗处理方法,考察了CNTs膜中无定形物和残留Fe催化剂对CNTs膜拉伸取向行为的影响。结果表明:采用CVD法制备的CNTs膜中CNTs表面无定形物为含氧或烷烃、烯烃类低聚物,可通过350℃有氧热处理基本去除。该CNTs膜的牵伸取向重排行为受组成影响显著,CNTs表面的低聚物可增强CNTs的管间黏结作用,Fe催化剂颗粒成为CNTs网络结构的交联结点,两者均有利于提高CNTs的取向程度和聚并成束的尺寸,进而提高CNTs膜的拉伸稳定性和断裂韧性。牵伸取向后CNTs膜与环氧树脂溶液的浸润性提高,其CNTs膜/环氧复合材料的拉伸强度和模量达到1228MPa和94.5GPa,相比初始无规CNTs膜/环氧复合材料的分别提高了337%和729%。      

冷壁装置化学气相沉积制备纳米碳管

采用冷壁装置化学气相沉积(CVD)制备纳米碳管,以乙炔(C2H2)为碳源气体,研究了2种催化剂(镍、铁)、3种基底、3种稀释气体、3种稀释气体和碳源气体流量比以及温度对CVD法生长纳米碳管的影响,用SEM和TEM分析了产物的形貌.结果表明,镍催化活性高于铁的催化活性.与石墨和纯铁基底相比,以单晶硅基底生长的纳米碳管纯度更高,管壁更干净.3种稀释气体和碳源气体流量比(2/1、10/1、19/1)中,以流量比为10/1时生长纳米碳管效果最好.3种稀释气体(氨气、氢气、氮气)中,以氨气最好.随着生长温度的升高,催化剂的活性提高,有利于碳的有序排列,但生长的碳纳米管直径增大.当基底为单晶硅、催化剂镍膜厚度为20nm、氨气气氛、生长温度为850℃时,得到了近似定向生长的纳米碳管.     

Influence of reaction time on growth of GaN nanowires fabricated by CVD method

GaN nanowires have been fabricated successfully on Si (111) substrates coated with NiCl₂ thin films by chemical vapor deposition method using Ga₂O₃ as raw material. The growth of GaN nanowires was investigated as a function of reaction times so as to study the influence of different durations on the components, microstructure, morphologies and optical properties of GaN samples in particular by X-ray diffraction, FT-IR spectrophotometer, scanning electron microscope, and photoluminescence. The results show that the samples after reaction are single crystal GaN with hexagonal wurtzite structure and high-quality crystalline after reaction at 1,100 °C for 60 min, which have good optical properties as revealed by PL spectra. Reaction time greatly influences the growth of GaN nanowires, that is, with the increase in reaction time, the crystalline quality of GaN nanowires is improved accordingly. The growth of the GaN nanowires follows the vapor–liquid-solid mechanism and Ni plays an important role as catalyst, which forms nucleation point in the growth of GaN nanowires.     

Coplanar amorphous silicon thin film transistor fabricated by inductively-coupled plasma CVD

The electrical and optical properties of the a-Si:H films deposited by inductively-coupled plasma chemical vapour deposition (ICP-CVD) have been investigated. The ICP-CVD a-Si:H films deposited at 30 mTorr exhibited the deposition rate of 0.9 Å/s and the hydrogen content of 17 at.%. A novel coplanar self-aligned a-Si:H thin film transistor has been fabricated using Ni-silicide gate and source/drain contacts. The coplanar a-Si:H TFT exhibited a field effect mobility of 0.6 cm²/Vs, a threshold voltage of 2.3 V, a subthreshold slope of 0.5 V/dec.     

Effect of silane modification on CNTs/silica composites fabricated by a non-firing process to enhance interfacial property and dispersibility

Carbon nanotube/ceramic composites have been in the spotlight thanks to their excellent properties. Sintering is the vital part of ceramics fabrication in terms of reliability, however sintering the carbon nanotube (CNT) based ceramic composites is a challenging task. In this study, interfacial bonding of silane functionalized CNT with silica ceramic is investigated by a non-firing sintering process. CNTs are first treated by a mixed acid with the aid of a silane 3-aminopropyl triethoxysilane (APTES), which improves the chemical bonding and dispersibility of CNT in ceramic bodies. The extent of APTES chemical functionalization and mechanical property of CNT/silica ceramic composites are characterized using Raman spectrometer, FT-IR analysis, X-ray photoelectron spectroscopy (XPS), scanning electron microscopy (SEM) and three-point bending strength measurement. Results show that composites are successfully prepared without sintering with stable CNT-silica interface, superior dispersibility, and good mechanical properties.     

用化学气相沉积方法在石墨表面沉积钨涂层的研究

研究了在一定温度的石墨基体表面上用化学气相沉积钨涂层的方法.通过调节氢气、氯气的气流量,控制流量比,得到了具有一定厚度、晶粒均匀致密的钨涂层,并对试验中仍需解决的问题做了讨论.     

Systematic study on synthesis and purification of double-walled carbon nanotubes synthesized via CVD

Carbon nanotubes have unique properties, such as thermal and electrical conductance, which could be useful in the fields of aerospace, microelectronics and biotechnology. However, these properties may vary widely depending on the dimensions, uniformity and purity of the nanotube. Nanotube samples typically contain a significant percentage of more allotropes forms of carbon as well as metal particles left over from catalysts used in manufacturing. Purity characterization of double-walled carbon nanotubes (DWCNTs) is an increasingly popular topic in the field of carbon nanotechnology. In this study, DWCNTs were synthesized in a catalytic reaction, using Fe:MgO as catalyst and methane or methane/ethanol as carbon feedstock for chemical vapor deposition (CVD). The addition of ethanol as carbon feedstock allowed to investigate the influence of oxygen on the sample quality. The purification of the as-produced material from the metallic particles and the catalyst support was performed by sonication in an acid solution. The influence of the duration of the acid treatment using ultrasound on the sample purity was investigated, and the optimal value of this parameter was found. Transmission electron microscopy (TEM) images confirmed the removal of impurities and served to elucidate the morphology of the samples. The purity of carbon nanotubes was analyzed using thermal gravimetric analysis (TGA). The Raman spectra of the samples, as a measure of the concentration of defects, were also reported.     

离子注入制备GaAs:Mn薄膜的性质研究

采用高能离子注入的方式,在半绝缘性的GaAs衬底中掺杂引入Mn离子制备了磁性半导体.借助于X-射线衍射仪(XRD)进行了结构分析,没有发现新的衍射峰,并运用高分辨率X射线衍射仪(HR-XRD)分析了Mn离子注入后衬底(004)峰的微小变化.根据原子力显微镜的结果发现,注入后的样品表面没有发生明显的变化.通过使用超导量子干涉仪SQUID进行变温分析,在所分析范围内M-T曲线存在拐点,但其所对应的铁磁性转变温度低于室温.     

气相沉积法分子筛封装SnO2纳米半导体材料的研究

以Ｙ型分子筛为主体,采用气相沉积法制备了分子筛封装ＳｎＯ２纳米半导体材料,并通过Ｘ射线衍射,ＩＲ吸收光谱,紫外漫反射光谱ＴＥＭ等手段对不同条件下制备的样品进行了表征。对于纳型的Ｙ型分子筛来说,几乎无法实现有效沉积,而以交换处理后的Ｙ型分子筛为主体,则可以在合适的条件下,能够获得高分散的ＳｎＯ２物中,并成功地了对主体分子筛的破坏程度。     

燃焰法沉积金刚石薄膜的实验研究

研究分析了燃焰法沉积金刚石薄膜时基片表面处理状态，燃烧气体流量比基片温度对薄膜成核密度、质量和晶体形态的影响。结果表明，在不同粒度的研磨粉研磨的基片表面上金刚石薄膜成核密度不同；燃烧气体流量配比对金刚石薄膜的质量影响很大；基片温度是影响金刚石薄膜晶体形态的一个重要因素。     

CVD金刚石成核的最新研究

研究了化学气相条件下金刚石在非均匀研磨硅基底表面及镜面基底和均匀研磨基底边缘及角域处的成核行为。发现ＣＶＤ金刚石成核不仅依赖于沉积区缺陷，更主要由缺陷的锐度决定，即缺陷加强ＣＶＤ金刚石成核的锐度效应。在对无序碳上ＣＶＤ金刚石成核研究的基础上，讨论了ＣＶＤ金刚石成核的机理，并由此阐明了各种表面预处理及负偏压等增强ＣＶＤ金刚石成核的微观过程。     

化学气相沉积碳／碳复合材料摩擦学行为研究

研究了化学气相沉积碳／碳（Ｃ／Ｃ）复合材料的摩擦磨损性能。全尺寸Ｃ／Ｃ复合材料刹车盘在不同的比压、能载、环境条件下试验结果表明：Ｃ／Ｃ复合材料的摩擦系数随着比压、能载的增大以及环境湿度的提高而减小。Ｃ／Ｃ复合材料具有良好的自润滑性能，磨损率仅为９．５×１０－４ｍｍ／面·次。其磨损是由机械磨损和氧化磨损共同作用的结果，氧化磨损为根本原因。     

磁控溅射法制备NiZnCo铁氧体磁性薄膜的工艺研究

采用磁控溅射在硅晶基体上制备NiZnCo铁氧体磁性薄膜,研究了溅射功率对溅射(沉积)速率和微观形貌的影响规律:随着溅射功率由80W增大到150W,薄膜的沉积速率增大;薄膜却由整齐均匀分布的小颗粒状向片状结构变化,分布也不均匀,晶粒明显长大.由此确定最佳溅射功率为120 W,薄膜的微观形貌最理想,溅射(沉积)速率也很快.     

碳纳米管/马来酸酐接枝聚丙烯复合材料制备及性能研究

本文采用溶液混合的方法制备了碳纳米管/马来酸酐接枝聚丙烯复合材料.光学显微镜照片显示,碳纳米管的加入使聚丙烯晶粒细化,同时晶粒大小比较均一.材料SEM和TEM像表明,当碳纳米管含量为5wt%时,碳纳米管在聚丙烯基体中仍分散较好,没有明显的团聚现象.拉伸实验结果显示当碳纳米管含量为3%时,拉伸强度可提高50%.     

CVD法制备ZnS的生长率均匀性研究

采用化学气相沉积（ＣＶＤ）法制备ＺｎＳ块状多晶红外窗口材料，试验通过发迹炉内压力、增加Ａｒ气稀释量以及改变Ｈ２Ｓ进气位置来研究沉积速率的均匀性。试验结果表明，炉内压力降低和增大Ａｒ气稀释量，可提高晶体在衬底上的沉积速率均匀性，但沉积速率下降。改Ｈ２Ｓ进气位置，有效地改善了Ｈ２Ｓ气体的均匀分布，可提高沉积速率的均匀性，同时也提高沉积速率，交对显微组织和红外光谱性能进行了观察测试。     

直流等离子体CVD金刚石膜的阴极发光性质的研究

本文研究了直流等离子体ＣＶＤ金刚石膜在常温和液氮温度下的阴极发光光谱，探讨了阴极发光谱中各峰的起因，并分析了光谱随测量温度和沉积条件的变化情况，讨论了造成这种变化的原因。研究表明，金刚石膜中缺陷和杂质以及金刚石膜的晶体结构对它的阴极发光光谱有重要的影响。     

PLD方法制备CaCu3Ti4O12薄膜结构研究

采用脉冲激光沉积法(PLD)分别在LaAlO3(100)以及MgO(100)基片上,在不同的沉积温度下,制备具有体心立方类钙钛矿结构的CaCu3Ti4O12(CCTO)薄膜.在LAO基片上生长的CCTO薄膜,X射线衍射(XRD)分析表明沉积温度在680℃以上可以实现 (400)取向生长,740℃薄膜可以实现cubic-on-cubic的方式外延生长.原子力显微镜(AFM)和扫描电子显微镜(SEM)分析分别显示CCTO薄膜的表面平整,界面清晰.后位的反射高能电子衍射(RHEED)观察到CCTO薄膜的电子衍射图谱,为点状.在MgO基片上,由于薄膜与基片较大的晶格失配,通过生长具有(100)和(110)取向的LaNiO3(LNO)缓冲层,诱导后续生长的CCTO薄膜随着温度的提高,由(220)取向生长转变成(220),(400)取向生长.     

Synthesis and purification of bimetallic catalysed carbon nanotubes in a horizontal CVD reactor

Carbon nanotubes (CNTs) were synthesised by a conventional chemical vapour deposition (CVD) method using acetylene as carbon source and a bimetallic catalyst of Fe–Co supported on a CaCO₃ support. The CNTs were characterised by transmission electron microscopy (TEM), X-ray diffraction (XRD), Raman spectroscopy (RS), energy dispersive X-ray spectroscopy (EDS) and thermogravimetric analysis (TGA). The TEM images show clustered CNTs and reveal the outer and inner diameters of these nanomaterials. The XRD analysis shows the characteristic broad peak of graphitised carbon; the RS indicates that these materials have a high degree of crystallinity while the TGA shows the high thermal stability of the materials. EDS analysis also indicates that the purification method employed was able to remove the impurities in the CNT samples.     

MW-ECR制备的氢化非晶硅光电特性研究

通过对热丝辅助微波电子回旋共振(HW-MW-ECRCVD)法制备的氢化非晶硅(a-SiH)薄膜进行暗电导与温度关系的测试,可得到暗电导激活能(Ea),并研究了Ea与a-SiH薄膜光敏性(σph/σ d)的关系;发现随着Ea的增大,费米能级位置下移,缺陷态密度减少,薄膜的光敏性变好.     

CVD金刚石膜/硅为基板的微条气体室性能研究

提出了一种新型的CVD金刚石膜/硅(ρ～1010Ω·cm)为基板的微条气体室,阳极宽度7μm阴极100μm,间距200μm。室温下,充以1.01×10-5PaAr+CH4混合气体时,采用5.9keV55FeX射线测量了探测器在不同高压和气体比例时的脉冲高度分布,详细讨论了高压和气体比例对能量分辨率的影响,结果表明该探测器具有较高的信噪比和能量分辨率。在Ar+10%CH4混合气体、-1100V漂移电压和-650V阴极电压工作条件下,微条气体室能量分辨率可达12.2%。