Effect of V2O5 and CuO additives on sintering behavior and microwave dielectric properties of BiNbO4 ceramics

The influences of V₂O₅ and CuO additives on the sintering behavior and microwave dielectric properties of BiNbO₄ ceramics were investigated. The V₂O₅ and CuO additives lowered the sintering temperature of BiNbO₄ ceramics to the range 875 °C–935 °C. All BiNbO₄ compounds with additives had the orthorhombic structure. The dielectric constant _r was not significantly changed, while the unloaded Q value was affected with additives. The Qf value was found to be a function of the sintering temperatures and the amount of additives. It varied from 4500 to 15800 (GHz) and 1000 to 8000 (GHz) with additives V₂O₅ and CuO, respectively. The _f values were increased in positive values with V₂O₅ doped, while decreased in negative values with CuO addition. V₂O₅ and CuO additives effectively improved the densification and dielectric properties of BiNbO₄ ceramics. The correlation between the microstructure and the Qf value was observed with different additives.     

Effects of CaF2 addition on sintering behavior and microwave dielectric properties of ZnTa2O6 ceramics

Microwave dielectric ceramics ZnTa₂O₆ were prepared by conventional mixed oxide route. The effects of CaF₂ addition on the microstructures and microwave dielectric properties of ZnTa₂O₆ ceramics were investigated. Formation of second phase can be detected at the high addition of CaF₂ (0.5–1.0 wt.%). Variation of grain shapes were observed with CaF₂ content increasing. The sintering temperature of CaF₂-doped ZnTa₂O₆ ceramics can be effectively lowered from 1400 °C to 1225 °C due to liquid phase effect. The microwave dielectric properties were affected by the amount of CaF₂ addition. At 1225 °C for 4 h, ZnTa₂O₆ ceramics with 0.25 wt.% CaF₂ possesses excellent microwave dielectric properties: ε_r = 31.32, Q × ? = 73600 GHz(6.8 GHz) and τ_? = ? 6.97 ppm/°C.     

Effects of Kaolinite additions on sintering behavior and dielectric properties of CaCu3Ti4O12 ceramics

Commercial Kaolinite was employed as sintering aid to reduce the sintering temperature of CaCu₃Ti₄O₁₂ (CCTO) ceramics. The effects of Kaolinite content and sintering temperature on the densification, microstructure and dielectric properties of CCTO ceramics have been investigated. The density characterization results show that the addition of Kaolinite significantly enhanced the relative density of CCTO ceramics to about 92 %. X-ray diffraction results show CCTO ceramics with a low amount of Kaolinite exhibited perovskite-like structure, but 1.0 wt% Kaolinite additions resulted in the formation of a secondary phase, CaO–TiO₂–Al₂O₃–SiO₂ glass phase was formed and improved the dielectric constant of ceramics, which was supported by scanning electron microscopy–energy dispersive X-ray results. CCTO ceramic with 1.0 wt% Kaolinite addition possessed well temperature and frequency stability of dielectric constant. It was found that Kaolinite lowered the dielectric loss of the samples.     

Preparation and microwave dielectric properties of Bi2Ti4O11 ceramics

Single phase of Bi₂Ti₄O₁₁ ceramics, which belong to meta-stable phase compounds, were synthesized by controlling the reaction time through conventional solid-state method. The effects of annealing time on phase composition of Bi₂Ti₄O₁₁ ceramic powders and sintered ceramics were studied by XRD analysis. Second phase Bi₂Ti₂O₇ appeared when the annealing time shorter than 4 h. However, pure phase of Bi₂Ti₄O₁₁ powders can be formed by prolonging the annealing time to 6 h at 1,000 °C. The sintering temperatures on microstructure and microwave dielectric properties of Bi₂Ti₄O₁₁ ceramics were investigated. The results show that ceramics sintered at 1,075–1,175 °C are single phase of Bi₂Ti₄O₁₁ and present two different sizes of prismatic shape grains. Smaller size crystals grow into larger ones with increasing sintering temperature. The ceramics sintered at 1,125 °C reach a maximum density and have a microwave dielectric properties of ε_r = 51.2, Q × f = 3,050 GHz and τ_f = ?297 ppm/°C.     

Low temperature sintering and microwave dielectric properties of Ba4Sm9.33Ti18O54 ceramics

The effect of BaCu(B₂O₅) (BCB) on the sinterability, microstructure and microwave dielectric properties of Ba₄Sm_9.33Ti₁₈O₅₄ (BST) has been investigated. Dilatometric measurements reveal that the sintering temperature of BST can be reduced by the addition of BCB. Microstructural analysis shows abnormal grain growth with large amount of BCB. A ceramic composite with Q × f = 4000 GHz, ?_r = 52 and τ_f = ?29 ppm/°C which can be sintered at 950 °C is obtained when 10 wt% BCB is added to BST. EDS analysis shows that the composite is chemically compatible with silver.     

Tailoring the microwave dielectric properties of BaRE2Ti4O12 and BaRE2Ti5O14 ceramics by compositional variations

Ceramic dielectric resonators in the BaO-RE₂O₃-TiO₂ (RE=rare earth) system have been prepared by the conventional solid state ceramic route. The dielectric properties have been tailored by substitution of different rare earth oxides and by bismuth oxide addition. The dielectric constants increased with Bi addition whereas the Q decreased. The temperature coefficient of the resonant frequency improved with bismuth addition.     

ZnO掺杂对CLST微波介质陶瓷烧结及介电性能的影响

研究了烧结助剂ZnO对CaO-Li2O-Sm2O3-TiO2(简写为CLST)系微波介质陶瓷的烧结特性及介电性能的影响.结果表明:ZnO的添加能有效地降低CLST陶瓷的烧结温度至1150℃.掺杂2wt%ZnO的CLST陶瓷取得了较好的介电性能:εr=84,tanδ=0.009,τf=-15ppm/℃.     

Influence of sintering temperature on secondary phases formation and microwave dielectric properties of Ca2Ce2Ti5O16 ceramics

Ca₂Ce₂Ti₅O₁₆ dielectric ceramics prepared by conventional solid-state ceramic route was investigated. Phase composition and microwave dielectric properties were measured using XRD and Vector network analyzer, respectively. XRD analysis of the calcined and sintered samples revealed the formation of CeO₂ and another unidentified phase (that vanished at ? 1400 °C) as secondary phases along with the parent Ca₂Ce₂Ti₅O₁₆ phase. The amount of the parent Ca₂Ce₂Ti₅O₁₆ phase increased with increasing sintering temperature from 1350 °C to 1450 °C accompanied by a decrease in the apparent density. The density decreased but ? _r and Q _u f _o increased with sintering temperature. An ? _r ～ 81.5, Q _u f _o ～ 5915 GHz and τ _f ～ 219 GHz were achieved for the sample sintered at 1450 °C.     

Low-temperature sintering and microwave dielectric properties of Ba3Ti4Nb4O21 with MnCO3–CuO

Effects of MnCO₃–CuO (for short MC) additives on densification and dielectric properties of Ba₃Ti₄Nb₄O₂₁ ceramics have been investigated. The densification temperature of Ba₃Ti₄Nb₄O₂₁ is greatly reduced from 1280 °C for pure Ba₃Ti₄Nb₄O₂₁ to 950 °C with the presence of MC. This is caused by the liquid phase sintering taking place between MC and Ba₃Ti₄Nb₄O₂₁ during sintering. The dielectric constant and the quality factor decrease with increasing MC additives. At a given amount of sintering additive, the dielectric constant and the quality factor decrease with increasing Mn content in the MC mixture. The Ba₃Ti₄Nb₄O₂₁ ceramics with 1 wt% 0.2MnCO₃–0.8CuO sintered at 950 °C for 2 h shows dielectric properties: ε _r  = 66, Q  ×  f = 13,400 GHz and τ _f  = 60 ppm/°C. Also, the material is compatible with Ag electrodes and, therefore, is suitable for LTCC application.     

Mg4(Ta1-xVx)2O9陶瓷的烧结特性和微波介电性能

用固相法制备了一系列Mg4(Ta1-xVx)2O9(MTV)陶瓷,研究了V5 取代Ta5 、MTV陶瓷的烧结特性和微波介电性能.用XRD和SEM研究其晶体结构和微观形貌.结果表明:在组分x≤0.3范围内形成了Mg4(Ta1-xVx)2O9连续固溶体.少量V5 取代Ta5 能够使MTV陶瓷的烧结温度从1450℃降至1150℃,但同时品质因数降低.x=0.1,1150℃烧结的Mg4(Ta1-0.1V0.1)2O9陶瓷具有较好的微波介电性能:ε约为11,Q·f值达41000GHz(8GHz).     

Synthesis and microwave dielectric properties of Ba4Ti3P2O15 ceramics

Present work introduces a new kind of microwave dielectric ceramic, Ba₄Ti₃P₂O₁₅. Ba₄Ti₃P₂O₁₅ ceramic can be prepared by solid state reaction method and be well densified after being sintered at above 1175 °C for 4 h in air. All the XRD patterns can be fully indexed as single-phase structure. The best microwave dielectric properties can be obtained in ceramic sintered at 1200 °C for 4 h with permittivity about 20.7, Q × f about 42,210 GHz and TCF about 37 ppm °C^?1. Measurements of the microwave dielectric properties of Ba₄Ti₃P₂O₁₅ ceramic revealed the existence of a maximum in the temperature dependence of the dielectric loss because of the defect dipoles relaxation.     

Low temperature sintering and microwave dielectric properties of MgNb2O6 ceramics

The effects of co-doped CuO and B₂O₃ addition on the sintering temperature, microstructure and microwave dielectric properties of MgNb₂O₆ ceramics prepared with conventional solid-state route were investigated. When both CuO and B₂O₃ were added, the MgNb₂O₆ ceramics were not only sintered at 1000 °C but also improved the Qf value. MgNb₂O₆ ceramics can be well sintered to approach to 98.1% theoretical density with 2.0 wt.% CuO–B₂O₃ additive due to its liquid phase effect. With 2.0 wt.% CuO–B₂O₃, a dielectric constant of 21.5, a Qf value of 108,000(GHz) and a τ _f value of −44 ppm/°C of MgNb₂O₆ ceramics doped with CuO–B₂O₃ sintered at 1050 °C for 2 h are obtained. The variation of ε _r, Qf and τ _f were also explained based on the difference in microstructures.     

Non-Ohmic and dielectric properties of Ba-doped CaCu3Ti4O12 ceramics

The microstructure, dielectric and electrical properties of Ca_1?x Ba _x Cu₃Ti₄O₁₂ (where x = 0, 0.025, and 0.05) ceramics were investigated. Our microstructural analyses revealed that Ba²⁺ doping ions preferentially form in a secondary phase, and are not introduced into the CaCu₃Ti₄O₁₂ lattice. Grain growth rate of CaCu₃Ti₄O₁₂ ceramics was significantly inhibited by the Ba-related secondary phase particles, resulting in a large decrease in their mean grain size. The dielectric permittivity of CaCu₃Ti₄O₁₂ ceramics decreased with increasing Ba content. Their loss tangent decreased after addition of CaCu₃Ti₄O₁₂ with 2.5 mol% of Ba²⁺, and increased with increasing Ba contents to 5.0 mol%. The nonlinear coefficient and breakdown field of the Ca_1?x Ba _x Cu₃Ti₄O₁₂ ceramics were significantly enhanced by adding 2.5 mol% of Ba²⁺, followed by a slight decrease as Ba²⁺ concentration was increased to 5.0 mol%. Using impedance spectroscopy analysis, it was revealed that variations in dielectric and non-Ohmic properties are associated with electrical response of grain boundaries. This supports the internal barrier layer capacitor model.     

Sandwiched BaNd2Ti4O12/Bi4Ti3O12/BaNd2Ti4O12 ceramics prepared by spark plasma sintering

Spark plasma sintering (SPS) combined with heat treatment was investigated to prepare laminated ceramics from compositions having quite different sintering temperatures. Although the optimal sintering temperature of BaNd₂Ti₄O₁₂ (BNT) ceramics was much higher than that of Bi₄Ti₃O₁₂ (BIT) ceramics, sandwiched BaNd₂Ti₄O₁₂/Bi₄Ti₃O₁₂/BaNd₂Ti₄O₁₂ (BNT/BIT/BNT) composite ceramics were successfully prepared with this new method. The results of scanning electron microscopy (SEM) and electron probe microanalysis (EPMA) showed that the BNT layers and the BIT layer were well bonded and no significant diffusion between them was observed. The temperature coefficient of dielectric constant of the laminated ceramic was found to be much smaller than that of BNT ceramic.     

Microstructures and microwave dielectric properties of low-temperature sintered Ca2Zn4Ti15O36 ceramics

Low-temperature sintered Ca₂Zn₄Ti₁₅O₃₆ microwave dielectric ceramic was prepared by conventional solid state reaction method. The influences from V₂O₅ addition on the sintering behavior, crystalline phases, microstructures and microwave dielectric properties were investigated. The crystalline phases and microstructures of Ca₂Zn₄Ti₁₅O₃₆ ceramic with V₂O₅ addition were investigated by X-ray diffraction, scanning electron microscopy (SEM) and energy dispersive X-ray spectroscopy (EDS). V₂O₅ addition lowered the sintering temperature of Ca₂Zn₄Ti₁₅O₃₆ ceramics from 1140 °C to 930 °C. Ca₂Zn₄Ti₁₅O₃₆ ceramic with 5wt% V₂O₅ addition could be densified well at 930 °C, and showed good microwave dielectric properties of ε_r ~ 46, Q × f ~ 13400 GHz, and temperature coefficient of resonant frequency (τ_f) ~ 164 ppm/°C.

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Effect of sintering temperature and time on microwave dielectric properties of CaNb2O6 ceramics

The microwave dielectric properties of CaNb₂O₆ ceramics were investigated with a view to their application in mobile communication. The CaNb₂O₆ ceramics were prepared by the conventional solid-state method with various sintering temperatures and sintering times. A maximum density of 4.67 g/cm³ was obtained for CaNb₂O₆ ceramic, sintered at 1,400 °C for 4 h. Dielectric constants (ε _r ) of 13.3–18.1 and quality factor (Q × f) of 12,200–50,000 GHz were obtained at sintering temperatures in the range 1,300–1,500 °C for 4 h. Dielectric constants (ε _r ) of 18.0–18.1 and quality factor (Q × f) of 44,300–50,000 GHz were obtained for sintering times in the range 2–6 h at a sintering temperature of 1,400 °C. A dielectric constant (ε _r ) of 18.1, a quality factor (Q × f) of 50,000 GHz, and a temperature coefficient of resonant frequency (τ _f ) of ?54 ppm/°C were obtained when CaNb₂O₆ ceramics were sintered at 1,400 °C for 4 h.     

Influence of V2O5 additions to Ba(Mg1/3Ta2/3)O3 ceramics on sintering behavior and microwave dielectric properties

The microstructures and the microwave dielectric properties of barium magnesium tantalate ceramics prepared by conventional mixed oxide route have been investigated. The prepared Ba(Mg_1/3Ta_2/3)O₃ exhibited a mixture of cubic perovskite and a hexagonal superstructure with Mg and Ta showing 1:2 order in the B-site. It is found that low level doping of V₂O₅ (up to 0.5 wt.%) can significantly improve densification of the specimens and their microwave dielectric properties. The density of doped Ba(Mg_1/3Ta_2/3)O₃ ceramics can be increased beyond 95% of its theoretical value by 1500 °C-sintering, which is caused by the liquid-phase effect of V₂O₅ addition. The detected second phase Ta₂O₅ was mainly the result of V⁵⁺ substitution in the ceramics. Dielectric constant (ε_r) and temperature coefficient of resonant frequency (τ_f) were not significantly affected, while the unloaded quality factors Q were effectively promoted by V₂O₅ addition due to the increase in B-site ordering. The ε_r value of 24.1, Q×f value of 149,000 (at 10 GHz) and τ_f value of 7.2 ppm/°C were obtained for Ba(Mg_1/3Ta_2/3)O₃ ceramics with 0.25 wt.% V₂O₅ addition sintered at 1500 °C for 3 h.