Properties of Va metal-B films prepared by r.f.-sputtering

Ta_100-x B _x alloy films were prepared by r.f.-sputtering in the chemical composition range 45 x 77. Ta_100-x B _x (45 x 58) films consist of the amorphous phase, while the TaB₂ crystal phase was observed in Ta_100-x B _x (66 x 77) films. A remarkable preferred orientation with the (001) plane of TaB₂ parallel to the film surface was observed in Ta₃₄B₆₆. The d.c. electrical conductivity of Ta_100-x B _x (45 x 77) films decreases with increasing boron content in the range 6.7 × 10³ to 1.3 × 10^3–1 cm^–1. The micro-Vickers hardness of Ta_100-x B _x (45 x 77) films was in the range 2200 to 2600 kg mm^–2.     

Effects of Nb doping on microstructure and properties of Bi4Ti3?xNbxO12 thin films prepared by magnetron sputtering

Bi₄Ti_3−xNb_xO₁₂ ferroelectric thin films were fabricated on p-Si substrates by magnetron sputtering. The effects of Nb doping on microstructure and properties of Bi₄Ti_3−xNb_xO₁₂ films were investigated. Bi₄Ti_3−xNb_xO₁₂ films had the same structure as Bi₄Ti₃O₁₂ with smaller and more uniform grains. The dielectric and ferroelectric properties of Bi₄Ti_3−xNb_xO₁₂ films were improved by Nb doping. Bi₄Ti_3−xNb_xO₁₂ films have better dielectric and ferroelectric properties with P _r = 16.5 μC/cm², E _C < 100 kV/cm, ε _r > 290, low dielectric loss (<0.9%) and clockwise C–V curves with a memory window of 0.9 V when x = 0.03–0.045, while an excessive Nb doping would lead to bad dielectric and ferroelectric properties.     

Rubidium ion conducting Rb2 ? 2xAl2 ? xAxO4 (A = Nb, Ta) solid electrolytes

Rb_{2 − 2x} Al_{2 − x} A _x O₄ (A = Nb, Ta) solid solutions have been synthesized, and their conductivity has been measured as a function of temperature and composition. The highest rubidium ion conductivity in the Rb_{2 − 2x} Al_{2 − x} A _x O₄ solid solutions is 3.16 × 10⁻³ S/cm at 300°C and ∼ 2 × 10⁻² S/cm at 700°C. The high rubidium ion conductivity of the synthesized solid electrolytes is mainly due to the formation of rubidium vacancies when Nb⁵⁺ or Ta⁵⁺ substitutes for Al³⁺ and to the specific features of the crystal structure of RbAlO₂.     

Preparation of new inorganic–organic complexes by using Fe x Ti1?2 x Nb1+ x O 5? ( x =?0–0.5) nanosheets

Novel inorganic–organic complex nanocomposites have been prepared by using exfoliated Fe _x Ti_1−2x Nb_1+x O₅⁻ nanosheets and poly (N-octadecyl-2-ethynyl pyridinium bromide) (PNOEtPyBr) by the method of exfoliation–reflocculation. The X-ray diffraction data of the nanocomposites indicate the formation of Fe _x Ti_1−2x Nb_1+x O₅/PNOEtPyBr nanostructure with the length of basal spacing of 4.6 nm along the stacking direction of Fe _x Ti_1−2x Nb_1+x O₅⁻ nanosheet layers. The a. c. electrical conductivity of nanocomposites decreased with the value of x. This trend was correlated with the hydration behavior of the interlayer for HFe _x Ti_1−2x Nb_1+x O₅·nH₂O (x = 0–0.5) which were starting compounds of nanosheets.     

Chemical vapour deposition of epitaxial Ni-Zn ferrite films by thermal decomposition of acetylacetonato complexes

Epitaxial (Ni, Zn)Fe₂O₄ films were prepared on (100) MgO single crystal substrate by lowpressure chemical vapour deposition using a thermal decomposition of acetylacetonatocomplexes, Ni(acac)₂, Zn(acac)₂ and Fe(acac)₃. These complexes were evaporated at 157, 79 and 146° C, respectively, and transported with nitrogen carrier gas (flow rate 100 ml min⁻¹) to the deposition furnace. Polycrystalline and epitaxial films were grown at 500 to 600 and 600 to 650° C, respectively, under a pressure of 12 torr. The epitaxial film of Ni_1−xZn_xFe₂O₄ (x⋍0.4) treated at 600° C for 60 min, showed the saturation magnetization of 67 e.m.u. g⁻¹ and the coercive force of 20 to 30 Oe.     

Growth and characterization of laser-deposited Ag-doped YBa2Cu3O7−x thin films on bare sapphire

Microstructural and superconducting properties of YBa₂Cu₃O_7−x thin films grownin situ on bare sapphire by pulsed laser deposition using YBa₂Cu₃O_7−x targets doped with 7 and 10 wt% Ag have been studied. Ag-doped films grown at 730°C on sapphire have shown very significant improvement over the undoped YBa₂Cu₃O_7−x films grown under identical condition. A zero resistance temperature of 90 K and a critical current density of 1·2×10⁶ A/cm² at 77 K have been achieved on bare sapphire for the first time. Improved connectivity among grains and reduced reaction rate between the substrate and the film caused due to Ag in the film are suggested to be responsible for this greatly improved transport properties.     

Effect of composition on the crystallization and magnetic properties of Fe–Co–Si–B–Nb amorphous alloys

The crystallization behavior and magnetic properties of Fe₆₂Co₁₀Si_15−x B_18−y Nb_{(x + y)−5} amorphous alloys with x = 0–5 and y = 0–5 were examined. Primary crystallization temperature of Fe₆₂Co₁₀Si_15−x B₁₃Nb _x and Fe₆₂Co₁₀Si₁₀B_18−y Nb _y alloys increased with the addition of Nb. The primary and secondary crystallization temperatures were well separated when the Nb content is above 4 at%. The alloys with 15–18 at% B showed a distinct supercooled region. The Nb addition decreased the Curie temperature as well as room temperature saturation magnetization. The glassy-type Fe₆₂Co₁₀Si₁₀B₁₈ alloy exhibited good soft magnetic properties as well as a supercooled liquid region of 39 K. The finding of the glassy-type Fe-based alloy without Nb element exhibiting high Bs above 1.4 T is promising for future use as a soft magnetic glass material.     

Raman spectroscopic investigation of sodium borosilicate glass structure

Raman spectra of sodium borosilicate glasses with a wide range of Na₂O/B₂O₃ ratios were systematically measured. Variations of the spectra with glass composition were studied to interpret the implied distribution of Na⁺ ions between silicate and borate units. When Na₂O/B₂O₃ is less than 1, all Na⁺ ions are associated with borate units as indicated by the absence of the 1100 cm⁻¹ band of Si-O⁻ non-bridging bond stretching. For the (1−x)Na₂O · SiO₂ ·xB₂O₃ glass withx≦0.4 the peak-height ratio of the 950 cm⁻¹ band to the 1080 cm⁻¹ band was used to analyse semiquantitatively the distribution of the Na⁺ ions between silicate and borate units. Sodium ions are divided between silicate and borate units approximately in proportion to the amount of SiO₂ and B₂O₃ present in these glasses. Some of the high sodium content glasses were crystallized and their spectra were compared with the bulk glass spectra. The distribution of Na⁺ ions in the glass was quite different from their distribution after crystallization. Spectra of high silica glasses that had been heat-treated for phase separation indicated exclusion of borate units from the silica network and the formation of borate groups. For high boron content glasses, no change was observed on heat treatment. Raman bands due to borate groups seem to be little affected by their environments. Also affiliated with the Department of Geosciences.     

Electrical properties of V<Subscript>2</Subscript>O<Subscript>5</Subscript>-CaO-P<Subscript>2</Subscript>O<Subscript>5</Subscript> glasses exhibiting majority charge carrier reversal

The thermoelectric power and d.c electrical conductivity of x V₂O₅⋅40CaO⋅(60−x)P₂O₅ (10 ≤ x ≤ 30) glasses were measured. The Seebeck coefficient (Q) varied from +88 μ V K⁻¹ to −93 μV K⁻¹ as a function of V₂O₅ mol%. Glasses with 10 and 15 mol% V₂O₅ exhibited p-type conduction and glasses with 25 and 30 mol% V₂O₅ exhibited n-type conduction. The majority charge carrier reversal occurred at x = 20 mol% V₂O₅. The variation of Q was interpreted in terms of the variation in vanadium ion ratio (V^{5 +}/V^{4 +}). d.c electrical conduction in x V₂O₅⋅40CaO⋅(60−x)P₂O₅ (10 ≤ x ≤ 30) glasses was studied in the temperature range of 150 to 480 K. All the glass compositions exhibited a cross over from small polaron hopping (SPH) to variable range hopping (VRH) conduction mechanism. Mott parameter analysis of the low temperature data gave values for the density of states at Fermi level N (E_F) between 1.7 × 10²⁶ and 3.9 × 10²⁶ m⁻³ eV⁻¹ at 230 K and hopping distance for VRH (R_VRH) between 3.8 × 10⁻⁹m to 3.4 × 10⁻⁹ m. The disorder energy was found to vary between 0.02 and 0.03 eV. N (E_F) and R_VRH exhibit an interesting composition dependence.     

Structure and electrochemical hydrogen storage properties of Pd/Mg<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>Al<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>/Pd thin films prepared by pulsed laser deposition

Three-layered Pd/Mg_1−x Al _x /Pd (x = 0, 0.13, 0.21, 0.39) thin films were prepared by means of pulsed laser deposition. In the present Al concentration range, X-ray diffraction analyses showed that the Mg_1−x Al _x layer was constituted of a single phase Mg(Al) solid solution. The Mg(Al) grains are preferentially orientated along the c-axis and their size decreased (from 18.5 to 10.5 nm) as the Al content increased. Scanning electron microscopy and atomic force microscopy observations indicated that all the films exhibited a globular surface structure. However, the surface roughness of the films decreased as the Al concentration increased. Rutherford backscattering spectroscopy revealed that the Mg–Al layer density (porosity) was strongly dependent on the Al content. Successive hydriding charge/discharge cycles were performed on the different Pd/Mg_1−x Al_x/Pd films in alkaline media. The highest discharge capacity was obtained with the Pd/Mg_0.79Al_0.21/Pd film, namely ~85 μAh cm⁻² μm⁻¹ or 320 mAh g⁻¹, which corresponds to a H/M atomic ratio of ~0.48 in the Mg–Al layer.     

Effect of secondary heat treatment on the spectroscopic properties of Na<Subscript>2</Subscript>O-Nb<Subscript>2</Subscript>O<Subscript>5</Subscript>-P<Subscript>2</Subscript>O<Subscript>5</Subscript> glasses

We have studied the optical absorption and luminescence spectra of 45Na₂O · xNb₂O₅ · (55 − x)P₂O₅ glasses containing 5, 10, 20, 25, 30, and 35 mol % Nb₂O₅. The results indicate that the absorption band around 26000 cm⁻¹, responsible for the yellow color of the glasses, is due to the [Nb^(5+)--O⁻] center and disappears upon secondary heat treatment. Heat treatment of europium-doped glasses increases the concentration of Eu³⁺ centers in an asymmetric environment, which is accompanied by an increase in luminescence efficiency. The reason for this is that the Eu³⁺ ions are located outside the niobate subsystem of the glass matrix. The europium in the glasses studied acts as a protector ion.     

Structure and electrical conductivity relaxation studies of Nb2O5-doped B2O3–Bi2O3–LiF glasses

Glasses with composition (70 − x) B₂O₃·15Bi₂O₃·15LiF·xNb₂O₅ with x = 0–1.0 mol% were prepared by conventional glass-melting technique. The molar volume V _m values decrease and the glass transition temperatures T _g increase with increase of Nb₂O₅ content up to 0.2 mol%, which indicates that Nb⁵⁺ ions act as a glass former. Beyond 0.2 mol% Nb₂O₅ the V _m increases and the T _g decreases, which suggests that Nb⁵⁺ ions act as a glass modifier. The FTIR spectra suggest that Nb⁵⁺ ions are incorporated into the glass network as NbO₆ octahedra, substituting BO₄ groups. The temperature dependence of the dc conductivity follows the Greaves variable range hopping model below 454 K, and follows the small polaron hopping model at temperatures >454 K. σ _dc, σ _ac conductivity and dielectric constant (ε) decrease and activation energy for dc conduction ΔE _dc which increases with increasing Nb₂O₅ content up to 0.2 mol%, whereas σ _dc, σ _ac and (ε) increase and ΔE _dc decreases with increasing Nb₂O₅ content beyond 0.2 mol%. The impedance spectroscopy shows a single semicircle or arcs which indicate only the ionic conduction mechanism. The electric modulus formalism indicates that the conductivity relaxation is occurring at different frequencies exhibit temperature-independent dynamical process. The (FWHM) of the normalized modulus increases with increase in Nb₂O₅ content suggesting that the distribution of relaxation times is associated with the charge carriers Li⁺ or F⁻ ions in the glass network.     

Preparation and thermoelectric properties of BP films on SOI and sapphire substrates

The chemical vapor deposited (CVD) BP films on Si(100) (190 nm)/SiO _x (370 nm)/Si(100) (625 μm) (SOI) and sapphire (R-plane) (600 μm) substrates were prepared by the thermal decomposition of the B₂H₆–PH₃–H₂ system in the temperature range of 800–1050 °C for the deposition time of 1.5 h. The BP films were epitaxially grown on the SOI substrate, but a two-step growth method, i.e., a buffer layer at lower temperature and sequent CVD process at 1000 °C for 1.5 h was effective for obtaining a smooth film on the sapphire substrate. The electrical conduction types and electrical properties of these films depended on the growth temperature, gases flow rates and substrates. The thermal conductivity of the film could be replaced by the substrate, so that the calculated thermoelectric figure-of-merit (Z) for the BP films on the SOI substrate was 10⁻⁴–10⁻³/K at 700–1000 K. Those on the sapphire substrate were 10⁻⁶–10⁻⁵/K for the direct growth and 10⁻⁵–10⁻⁴/K for the two-step growth at 700–900 K, indicating that the film on a sapphire by two-step growth would reduce the defect concentrations and promote the electrical conductivity.     

Effect of Mg content on structure and properties of Mg<Subscript><Emphasis Type="Italic">x</Emphasis></Subscript>Zn<Subscript>1−<Emphasis Type="Italic">x</Emphasis></Subscript>O:Al UV transparent conducting films

Mg _x Zn_1−x O:Al (0 ≤ x ≤ 0.6) UV transparent conducting films were deposited on quartz glass by radio frequency magnetron sputtering. Effect of Mg content on structure, optical and electrical properties of Mg _x Zn_1−x O:Al films was investigated. There is a single phase of basic wurtzite structure of ZnO in Mg _x Zn_1−x O:Al films at x ≤ 0.4, and of a basic structure of cubic structure of MgO at x ≥ 0.6. The band gap can be varied from 3.27 to 5.90 eV by controlling Mg contents. The resistivity of Mg _x Zn_1−x O:Al films increase with increasing Mg content x due to the decrease of Al-doping efficiency. The electrical conduction of Mg _x Zn_1−x O:Al films can be markedly improved by increasing the Al-doping level appropriately and annealing in argon atmosphere at over 500 °C. The maximum band gap of Mg _x Zn_1−x O:Al films with wurtzite structure was found to be 5.35 eV when Mg content x is 0.4, and the minimum resistivity of 5.4 × 10⁻⁴ Ω cm was obtained when the Al/(Zn + Mg + Al) is 0.03 and the annealing temperature is over 500 °C. The average transmittance of Mg _x Zn_1−x O:Al films was higher than 86% in the wavelength region from 300 (x ≥ 0.4) to 800 nm.     

Comparison of microwave-induced combustion and solid-state reaction method for synthesis of LiMn2− x Co x O4 powders and their electrochemical properties

Spinel LiMn_{2 − x}Co_xO₄ (0.00 ≦ x ≦ 0.20) powders with small and uniform particle size were successfully synthesized by microwave-induced combustion using lithium nitrate, manganese nitrate, cobalt nitrate, and urea as the starting materials. The LiMn_{2 − x}Co_xO₄ powders synthesized by microwave-induced combustion were investigated by X-ray diffractometer (XRD), thermogravimeter analyzer (TG), and scanning electron microscopy (SEM). The LiMn_{2 − x}Co_xO₄ samples were used as cathode materials in lithium-ion batteries, whose discharge capacity and electrochemical characteristics such as the cycling performance were also investigated. The results revealed that the LiMn_{2 − x}Co_xO₄ cell synthesized by microwave-induced combustion provided a high initial capacity and excellent reversibility compared to the material prepared by solid-state reaction method.     

A systematic study on the growth of PZNT films by LPE method

Liquid phase epitaxy (LPE) was used to grow (1−x)Pb(Zn_1/3Nb_2/3)O₃−xPbTiO₃ (PZNT) films on different substrates. The morphology and epitaxial relationship of PZNT films with these substrates were investigated by optical microscopy and XRD. It was found that PZNT grains on planes of (001) MgO, (001) LaAlO₃ (LAO) and two specific planes of SrTiO₃ (STO), i.e. (110) or (111), distribute randomly and show no evident epitaxial relationship with these substrates. However PZNT films on (001) STO substrates exhibit very encouraging in-plane epitaxial relation: [100](001)_PZNT // [100](001)_STO, which was observed directly by OM, SEM and further confirmed by X-ray diffraction.     

Densification behavior, microstructure, and electrical properties of sol–gel-derived niobium-doped (Bi0.5Na0.5)0.94Ba0.06TiO3 ceramics

Superfine powders (~100 nm) with compositions of (1 − x)(Bi_0.5Na_0.5)_0.94Ba_0.06TiO₃ + xNb⁵⁺ (BNTBT6 + xNb) with x from 0 to 0.02 were synthesized by an improved citrate sol–gel method using Nb₂O₅ as Nb⁵⁺ source. The sintering behavior, microstructure, and various electrical properties of BNTBT6 + xNb ceramics were investigated. The results indicated that the addition of a small amount of Nb⁵⁺ has no remarkable effect on the crystal structure and grain morphology, but the electrical properties of the ceramics are obviously influenced. The BNTBT6 + 0.005Nb compositions exhibit enhanced densification behavior and improved electrical properties of a piezoelectric constant d ₃₃ ~ 205 pC/N and a planar electromechanical coupling factor k _p ~ 33%.     

Experimental determination of the spatial distribution of electron defects in La2 ? xSrxCuO4 and Nd2 ? xCexCuO4 crystal lattices

The data of M?ssbauer emission spectroscopy on ⁶⁷Cu(⁶⁷Zn) and ⁶⁷Ga(⁶⁷Zn) isotopes show that holes appearing as a result of the Sr²⁺ substitution for La³⁺ in the La_{2 − x} Sr _x CuO₄ crystal lattice are localized predominantly at oxygen atoms occurring in the same atomic plane as the copper atoms. In contrast, electrons appearing as a result of the Ce⁴⁺ substitution for Nd³⁺ in the Nd_{2 − x} Ce _x CuO₄ crystal lattice are localized in the copper sublattice. These results are consistent with the model assuming that a mechanism responsible for the high-temperature superconductivity in La_{2 − x} Sr _x CuO₄ and Nd_{2 − x} Ce _x CuO₄ crystal lattices is based on the interaction of electrons with two-site two-electron centers possessing negative correlation energies (negative-U centers).     

Dielectric properties and electrical conductivity of LixNa1?xTa0.1Nb0.9O3 ferroelectric solid solutions

We have studied the dielectric properties and electrical conductivity of Li _x Na_{1 − x} Ta_0.1Nb_0.9O₃ (x = 0.03−0.135) ferroelectric solid solutions at temperatures from 290 to 700 K and frequencies from 25 to 10⁶ Hz. The results demonstrate that charge transport in these materials is due to the Li⁺ ion and that their conductivity is dominated by volume ion transport. In the temperature range studied, the Li _x Na_{1 − x} Ta_0.1Nb_0.9O₃ solid solutions undergo a first-order ferroelectric phase transition close to second order. Increasing the lithium content enhances features characteristic of second-order transitions.     

Characterization of Cd1−x Zn x Se thin films deposited at low temperature by chemical route

Optoelectronic technologically important pseudo-binary Cd_1−x Zn _x Se thin films with a variable composition (0 < x < 1) has been developed by chemical bath deposition method. The objective to study growth kinetics, physical, microscopic, compositional, optical, electrical and structural changes. Cd_1−x Zn _x Se have been deposited on non-conducting glass substrate in tartarate bath containing Cd⁺² and Zn⁺² ions with sodium selenosulphate with an aqueous alkaline medium at 278 K. The quality and the thickness of the films are depends upon deposition temperature, deposition time and pH, etc. X-ray diffraction (XRD), atomic absorption spectroscopy, optical absorption, scanning electron microscopy and thermoelectric technique characterized the films. The XRD study indicates the polycrystalline nature in single cubic phase over whole range of composition. Analysis of absorption spectra gave direct type band gap, the magnitude of which increases non-linearly as zinc content in the film is increased and dc electrical conductivity at room temperature was found to decreases from 10⁻⁷ to 10⁻⁸ (Ω cm)⁻¹. All the films show n-type conductivity. The promising features observed are the formation of continuous solid solutions in a single cubic phase.