Growth and Properties of V-Doped CdxHg1 – xTe Crystals

Cd _x Hg_{1 – x} TeV (x= 0.9–0.95) crystals were prepared by two versions of Bridgman growth, and their optical homogeneity and transport properties were studied. The electrical resistivity of the crystals was 10⁴to 10⁸ m. From the temperature dependences of the Hall coefficient, the activation energy of the vanadium level in Cd _x Hg_{1 – x} TeV was determined to be 0.73–0.82 eV.     

Growth and Properties of CuAlS2x Se2(1 – x) Single Crystals

CuAlS₂, CuAlSe₂, and CuAlS_2x Se_{2(1 – x)} (0 < x < 1) single crystals were grown by chemical vapor transport in a close-spaced geometry and characterized by x-ray diffraction and differential thermal analysis. The results were used to map out the CuAlSe₂–CuAlS₂ phase diagram. The density of the crystals was found to vary linearly with x, while microhardness shows a maximum. The transmission and reflection data obtained near the intrinsic edge were used to determine the band gap E _g of CuAlS₂, CuAlSe₂, and the solid solutions. E _g was found to vary nonlinearly with composition.     

Dielectric Properties of Melt-Grown Cd1 – xZnxTe Crystals

The real (") and imaginary (") parts of the complex dielectric permittivity of Cd_{1 – x} Zn _x Te (x= 0.1–0.2) crystals are measured as a function of temperature and frequency. The "-vs.-temperature data show a maximum, and " rises rapidly at about the same temperature. This behavior is interpreted in terms of compositional fluctuations, structural defects, and the associated internal electric fields.     

Vapor Growth of Pb1 – x In x Te Crystals

Vapor growth of In-doped PbTe crystals by the sublimation–condensation and vapor–liquid–solid (VLS) processes is examined. Well-faceted Pb_{1 – x} In _x Te crystals with x = 0.04–0.06 are prepared by the sublimation method. The effects of the charge composition on the facial development and growth rate in the range 0 x 0.02 are discussed. The growth process at x 0.02 is shown to follow the VLS mechanism. Bulk Pb_{1 – x} In _x Te crystals with x 0.05 are grown by a vertical VLS process. The crystal composition is shown to depend significantly on the rate of ampule translation through the temperature field of the furnace and the separation between the evaporation and condensation zones. The longitudinal indium profiles in the crystals are correlated with growth kinetics.     

Preparation and Properties of Pb1 – xSnxTe1 – ySeyEpilayers

Pb_{1 – x} Sn _x Te_{1 – y} Se _y layers lattice-matched with KCl and BaF₂are grown by liquid-phase epitaxy. Epilayer compositions and growth temperatures are determined at which p- and n-type materials can be obtained without doping. The composition dependences of the Hall coefficient and carrier mobility are analyzed.     

Crystal Growth and Properties of Cd1 – x Zn x As2 Solid Solutions

Cd_{1 – x} Zn _x As₂ (x = 0.03, 0.05, 0.06) single crystals are grown by the Bridgman method, and their optical absorption spectra are measured. The introduction of Zn is shown to increase the band gap of CdAs₂, by up to 14 meV at x = 0.06. The highest content of ZnAs₂ incorporated into CdAs₂ is 6 mol %.     

Temperature-Dependent Elastic Constants and Dielectric Properties of (Zn1 – x Cd x )3(P1 – y As y )2 Crystals

Crystals of constant-lattice-parameter (a const) and constant-thermal-expansion ( _a const) (Zn_{1 – x} Cd _x )₃(P_{1 – y} As _y )₂ solid solutions with 0.71 x 0.94 and 0.2 y 1 are prepared, and their elastic and dielectric properties are studied between 78 and 400 K. The elastic constants are found to decrease linearly with increasing temperature and to rise monotonically with increasing Cd and As content, up to x = 0.94 and y = 1. These findings are interpreted in terms of structural changes and bond rearrangement near the morphotropic structural transformation. Dielectric permittivity rises monotonically with temperature and solute concentration and shows a sharp upturn at x = 0.94 andy = 1. The extremely high dielectric permittivity is interpreted in terms of charge transfer between defect complexes responsible for deep levels in the band gap.     

Thermal Conductivity of Sr1 – xBaxF2 Single Crystals

Inorganic Materials - The thermal conductivity κ of single crystals of the Sr1–xBaxF2 fluorite solid solution series has been measured in the temperature range 50–300 K by an...     

Composition and Electrical Properties of Hg x Cd1 – x S Whiskers

Data are presented on the morphology, composition, and electrical and photoelectric properties of Hg _x Cd_{1 – x} S (x = 0.25–0.6) whiskers.     

Structural and Thermal Properties of Cu1 – xAgxInS2Chalcopyrite Solid Solutions

The anisotropic thermal expansion of Cu_{1 – x} Ag _x InS₂chalcopyrite solid solutions was studied by x-ray diffraction from 80 to 650 K. Over the entire temperature range studied, the thermal expansion of the solid solutions was found to be anisotropic: thec-axis thermal expansion is considerably smaller than thea-axis thermal expansion. The solid solutions with 0.55 <x< 1.0 exhibit negative c-axis thermal expansion. The composition dependences of the thermal expansion coefficients and anisotropy parameters are nonlinear. The anisotropy parameters rise monotonically with increasing x. The correlation between the thermal expansion anisotropy and tetragonal distortion = 2 – c/ais considered. Directions of zero thermal expansion are identified.     

Piezoelectric Properties of TlIn1−x Nd x Se2 Crystals

The piezoelectric properties of TlIn_1–x Nd _x Se₂ crystals (0 x 0.05) have been investigated. It has been found that these crystals possess high coefficients of tensosensitivity which change on partial substitution of the indium atoms by neodymiun atoms and strongly depend on the intensity of the spectral composition of optical illumination.     

Thermoelectric Properties of TlIn1 – x Yb x Te2 (0.01 ≤ x ≤ 0.09) Crystals

The thermoelectric properties of TlIn_{1 – x} Yb _x Te₂ (0.01 x 0.09) crystals are studied. The results indicate that the crystals possess high thermoelectric figures of merit in the range 500–700 K.     

Preparation and Properties of Silicate Glasses Containing CdSe x Te1 – x Nanoparticles

Data are presented on the formation of ultrafine CdSe _x Te_{1 – x} (0 x 1) particles in silicate glass. By introducing CdSe, CdTe, or CdSe _x Te_{1 – x} particles into glass batches, glasses are obtained which contain semiconductor nanoparticles formed during melt cooling. The absorption spectrum of the glasses thus prepared depends on the composition, concentration, and structure of the semiconductor nanoparticles.     

Synthesis and Photoelectrochemical Properties of Cd4 – x Hg x GeS6 Solid Solutions

Cd₄GeS₆, Hg₄GeS₆, and Cd_{4 – x} Hg _x GeS₆ crystals are grown from presynthesized charges. The electrochemical and photoelectrochemical properties of a Cd_1.2Hg_2.8GeS₆ electrode are studied. The energy positions of the conduction-band and valence-band edges are compared for two samples having identical cation compositions but differing in anion composition.     

Preparation and Properties of CuCr1 – x V x Se2 Solid Solutions

The phase relations in the CuSe–(1 – x)CrSe–xVSe system were studied. The system was found to contain CuCr_{1 – x} V _x Se₂ solid solutions isostructural with CuCrSe₂. The solid-solution range and oxidation states of Cr and V were determined.     

Magnetic Properties of High-Resistivity CdTe〈In〉 and CdTe〈Cl〉 Crystals

The magnetic susceptibility of high-resistivity CdTeIn and CdTeCl crystals was measured between 4.2 and 300 K. The susceptibility was found to vary anomalously with temperature. Below 50 K, all the samples were paramagnetic. The observed anomalies are interpreted in terms of donor–acceptor pairs formed by native defects and dopant or uncontrolled impurity atoms. The effect of doping on the 300-K is related to the Van Vleck paramagnetic contribution resulting from the local electric fields of X_i–V _Cdand In_i–V _Cddefect complexes. In CdTeCl, this contribution is insignificant.     

Hydrothermal Synthesis and Transport Properties of FeS1-xTex (0 ≤ x ≤ 0.15) Single Crystals

Journal of Superconductivity and Novel Magnetism - In this work, a series of FeS1-xTex (0 ≤ x ≤ 0.15) single crystals were successfully synthesized by a hydrothermal method for the...     

Electrochemical Growth,Optical Absorption Spectra,and Luminescence Properties of Films of Cd1 – xZnxS (0 < x ≤ 0.042) Solid Solutions

Inorganic Materials - Polycrystalline Cd1 – xZnxS (0 &lt; x ≤ 0.042) films with the wurtzite structure have been grown on tin dioxide by electrochemical deposition from an aqueous...     

Preparation and Magnetic Properties of CuCr1 – x Mn x S2 Solid Solutions

Phase relations in the CuS–CrS–MnS system (20 mol % MnS) were studied. The system was found to contain CuCr_{1 – x} Mn _x S₂ solid solutions isostructural with CuCrS₂. The solid-solution range and the oxidation states of Cr and Mn were determined.     

Growth and characterization of Zn1 – x Mg x S thin films for electroluminescent applications

:Mn thin films (x=0–0.30) were prepared by thermal co-evaporation of ZnS, Mg and Mn. The structural investigation shows the solid solution is formed in the Mg composition range x=0–0.25 and phase segregation occurs at higher Mg composition (x > 0.25). The optical band gap shows an increase with increase of Mg composition. The electroluminescent emission corresponding to the transition ion shows a blue shift with increase of Mg composition in the film. :Mn films could be used as an active layer in a.c. thin film electroluminescent (ACTFEL) devices for obtaining green emission color.