Improved Superconducting Properties in Graphene-Doped MgB<Subscript>2</Subscript> Prepared by Coating Method

The effects of graphene doping on the phase formation and superconductivity of MgB₂ bulks synthesized with different process have been studied systemically. Considering the scattering structure of graphene, coating method was applied to enhance the uniformity of graphene doping. The graphene coated B addition was expected to improve the critical current density of MgB₂ bulks. In our study, several experiments were performed to find out the suitable way for graphene doping. The coating method could enhance the critical current density of MgB₂ from 1.9 × 10⁵ to 2.5 × 10⁵ A/cm² at 20 K and 0 T, compared with that of the undoped sample. And the superconductivity of MgB₂ prepared by coating method got obvious improvement at high field compared with that of pure graphene doping bulk. It can be concluded that the coating method could ensure the uniformity of graphene doping in MgB₂ and refined the grain crystalline effectively.     

Superconducting Properties and Microstructure of Nanocrystalline MgB2 Bulk Prepared by Sintering of Ball-Milled Powders

Ultrafine nanostructured MgB₂ bulks with an average grain size less than 10 nm have been fabricated by high-energy ball milling and subsequent high pressure sintering. Microstructural evolution in MgB₂ subjected to high-energy ball milling has been investigated by means of X-ray diffraction (XRD). The finer grain size of MgB₂ powders of about 7 nm has been estimated from Rietveld refinement analysis of XRD data, which is confirmed by a transmission electron microscope (TEM) observation. There is almost no grain growth in the subsequent sintering at low temperature of 600?°C under pressure of 3?C5 GPa for 10?C30 min. The nanocrystalline MgB₂ bulks exhibit the lower onset critical transition temperatures (T _{c onset}) of 32?C33?K. The relative wider width of the magnetic hysteresis loops at high external magnetic field and the higher critical current density (J _c ) are obtained in nanocrystalline bulks. J _c is as high as 10⁵?A/cm² in 8?T at 10?K and 2.7×10³?A/cm² in 4?T at 20?K.     

Improving the Characteristics of Powder-In-Tube MgB2 Superconductor Fabricated Using the Extrusion Technique

High-density cylindrical MgB₂ superconductors were manufactured using an ex situ powder in tube extrusion technique. The superconducting properties of the steel-sheathed MgB₂ samples were examined with respect to their magnetisation responses, critical temperature and current density. The critical current density of the superconductor was determined by means of magnetisation measurements using Bean’s critical state model. J _c reached a maximum of 4×10⁵ A/cm² at 5 K.     

Effects of MgO on the Electronic and Superconducting Properties in Succinic Acid (C4H6O4) Doped MgB2 Bulks

In this paper, we report the doping effects of succinic acid, C₄H₆O₄ (from 0 to 30 wt%) on the lattice parameter, critical temperature (T _c), critical current density (J _c), upper critical field (H _c2), and irreversibility field (H _irr) in MgB₂ superconductor. It was found that MgB₂ doped with 10 wt% C₄H₆O₄ and sintered at 900 °C exhibited excellent J _c above 10⁴ A?cm^?2 at 5 K and 8 T. Impurity scattering due to C substitution, improved crystallinity and the least amount of MgO in 10 wt% doped sample improves J _c very significantly. The MgO amount is rapidly increased in 20 and 30 wt% doped samples which causes a strong depression of J _c, H _c2, H _irr due to poor inter and intra-grain connectivity.     

Enhancement of Critical Current Density of MgB<Subscript>2</Subscript> by Glutaric Acid Doping: a Simultaneous Improvement on the Intrinsic and Extrinsic Properties

In this study, we report an enhancement of critical current density of bulk MgB₂ superconductors by glutaric acid (C₅H₈O₄) doping. The effects of glutaric acid doping on MgB₂ lattice resulted in a record self-field J _c of the order of 10⁶ A/cm². A simultaneous improvement in the connectivity, pinning force, and H _c2 is the major factor that determined excellent J _c performance. X-ray diffraction analysis showed that samples were single-phase MgB₂ with a minor trace of impurities. A dramatic change in grain morphology and homogeneity in grain distribution was found in the SEM images of doped samples. We observed that homogeneity in grain distribution played a crucial role in the connectivity and the upper critical field (H _c2) of the doped samples. We were able to introduce a new dopant through a two-step mixing approach which is suitable to overcome the degradation of low field and self-field J _c reported for carbon-doped MgB₂ superconductor samples.     

The Effect of Cu Addition on the Phase Formation and Critical Current Density in the Sugar Doped MgB2 Superconductor

With the aim of improving the critical current density (J _c ) in the MgB₂ superconductor, minor Cu (3?at%) was doped to the MgB₂ samples in-situ sintered with Mg powder and sugar-coated amorphous B powder. Combined with thermal analysis, phase identification, microstructure observation and J _c measurement, the effect of minor Cu addition on the sintering mechanism, microstructure and critical current density of sugar-doped MgB₂ superconductors were investigated. It is found that the minor Cu addition could obviously accelerated the MgB₂ phase formation and improve the growth of MgB₂ grains during the sintering process of sugar-doped MgB₂ due to the appearance of Mg?CCu liquid at low sintering temperature. On the other hand, the Mg?CCu liquid hindered the reactive C released from sugar entering in the MgB₂ crystal lattice. Hence, the connectivity between MgB₂ grains was improved accompanying with the C substitution for B is decreased. At 20?K, the J _c of co-doped samples at low fields was further increased whereas it is decreased at high fields, compared with the only sugar-doped samples.     

Properties of MgB2 Thin Films Deposited on Different Substrates Prepared by Ex-Situ Annealing Process

MgB₂ thin films were deposited on MgO (100) substrate and r-plane Al₂O₃ $(1\bar{1}02)$ substrate by ex-situ annealing of boron film in magnesium vapor. The thickness of ex-situ annealed MgB₂ films is approximately 600 nm according to data observation by ellipsometer. The magnetic properties of samples were determined using a vibrating sample magnetometer. The magnetic field dependence of the critical current density J _c was calculated from M–H loops and also the magnetic field dependence of F _p was compared for the different temperature ranges from 5 to 25 K. The critical current density J _c was found to be around 1.0×10⁶ A/cm² and 1.7×10⁶ A/cm² in zero field at 5 K for MgB₂ films deposited on MgO and r-plane Al₂O₃ substrates, respectively. It was found that the critical current density of the film deposited on MgO became stronger than that of r-plane Al₂O₃ in the magnetic field. The superconducting transition temperature was determined by ac susceptibility measurement using physical properties measurement system. ac susceptibility measurements for MgB₂ films deposited on MgO and r-plane Al₂O₃ substrates were performed as a function of temperatures at constant frequency and ac field amplitude in the absence of dc bias field. The critical current densities as a function of temperature were estimated from the ac susceptibility data.     

Fabrication of 6-filament MgB2 wires enhanced by high strength 91-filament Cu–Nb composite

We chose high strength and high conductive Cu–Nb composite as strengthening core to improve the mechanical properties of 6-filament MgB₂ wires. The Cu–Nb core become partially dispersion strengthened during the fabrications of the MgB₂ wires. It has been found that this Cu–Nb composite offers good promise of increased strength while maintaining the superconducting properties of the MgB₂ wire. The Young’s modulus of the best wire samples increased significantly to about 130 GPa, which is comparable to those of high strength ferromagnetic materials sheathed wires but without negative ferromagnetic effects. Those mechanical properties were enough to satisfy the low field application needs. The critical current I _c also achieves 200 A (engineering critical current density, J _ce above 1.30 × 10⁴ A/cm²) at 20 K 1 T field. The 91-filament Cu–Nb composite core reinforced wires were fabricated by in situ Powder In Tube method.     

High Critical Current Densities in MgB2 Films Grown on Hastelloy Tape by Hybrid Physical-Chemical Vapor Deposition

We report on the high critical current densities in MgB₂ films directly grown on Hastelloy tapes without any buffer layer by using the hybrid physical-chemical vapor deposition method. MgB₂ films were formed by reaction of Mg metal vapor with the incoming B₂H₆ gas on the heated substrates. In MgB₂ films grown for 10 min at 500 °C in total working pressure 100 Torr with gas mixing ratio H₂:B₂H₆=70:30, we observed the transport critical current density (J _c) was approximately 10⁶ A/cm² at 4 T and 20 K in magnetic fields applied parallel to the substrate plane. This value is higher than those observed in epitaxial MgB₂ films on sapphire substrates grown by using the same method. Magnetic field dependence of J _c of this sample was well explained by the grain-boundary pinning model. Our result opens up a possibility that the coated conductors made of MgB₂ films have a strong potential for high current applications.     

Superconducting properties and growth mechanism of layered structure in MgB2 bulks with Cu/Y2O3 co-doping

Bulk MgB₂ samples containing Cu and Y₂O₃ have been prepared by conventional solid state reaction at 850 °C, and the structure and superconducting properties have been investigated. Differing from the structure in previous studies, a type of novel, layered structure was obtained in Cu/Y₂O₃-doped MgB₂ sample. Furthermore, the critical current density (J _c) at high field (>4 T) was improved compared to undoped, and Cu-doped MgB₂ samples. After analyzing the phase composition, microstructure, and sintering process, it was found that Y₂O₃ and Cu are independent in providing effective pinning centers, and YB₄ impurity should be responsible for the enhancement of J _c as well as the increased irreversible magnetic field. However, J _c at low field was slightly worsened, but still maintaining 10⁵ A cm^?2 at 0 T, since the intercrystalline connectivity was not seriously deteriorated. Finally, a possible growth model was put forward to describe the formation sequences of the layered structure. It was supposed that the formation of steps at low temperature originated from the coherent relationship between Mg and MgB₂, while the steps formed at high temperature were related to the pinning effect of secondary phase during the migration of grain boundary.     

Degradation of Superconducting Properties in MgB2 by Formation of the MgB4 Phase

Superconducting MgB₂ polycrystalline samples have been fabricated under two different conditions in order to determine the effect of MgB₄ phase. A series of samples was placed in an α-alumina container closed with a cup and fired under high purity argon gas. The other series of samples was placed in an α-alumina boot without any lid and fired under similar conditions. For the first series of samples, we have found pure MgB₂ phase formation and a narrow transition width at 0.4 K. For the second series of samples, significant amount of MgB₄ phase were formed and the T _zero was decreased to 27 K. For both the group of samples magnetization hysteresis loops obtained at various temperature range and applied field up to 2 T. The best J _cmag for the first series of samples was 1.9 × 10⁵ A/cm² at 10 K and 0 T, and for the second series of samples was 0.7 × 10⁴ A/cm² at 10 K and 0 T.     

Pinning enhancement in MgB2 superconducting thin films by magnetic nanoparticles of Fe2O3

MgB₂ thin films were fabricated on r-plane Al₂O₃ ( ${1} \overline{{1}} {0} {2})$ substrates. First, deposition of boron was performed by rf magnetron sputtering on Al₂O₃ substrates and followed by a post-deposition annealing at 850 °C in magnesium vapour. In order to investigate the effect of Fe₂O₃ nanoparticles on the structural and magnetic properties of films, MgB₂ films were coated with different concentrations of Fe₂O₃ nanoparticles by spin coating process. The magnetic field dependence of the critical current density J _c was calculated from the M–H loops and magnetic field dependence of the pinning force density, f _p(b), was investigated for the films containing different concentrations of Fe₂O₃ nanoparticles. The critical current densities, J _c, in 3T magnetic field at 5 K were found to be around 2·7 × 10⁴ A/cm², 4·3 × 10⁴ A/cm², 1·3 × 10⁵ A/cm² and 5·2 × 10⁴ A/cm² for films with concentrations of 0, 25, 50 and 100% Fe₂O₃, respectively. It was found that the films coated with Fe₂O₃ nanoparticles have significantly enhanced the critical current density. It can be noted that especially the films coated by Fe₂O₃ became stronger in the magnetic field and at higher temperatures. It was believed that coated films indicated the presence of artificial pinning centres created by Fe₂O₃ nanoparticles. The results of AFM indicate that surface roughness of the films significantly decreased with increase in concentration of coating material.     

Comparison of Critical Current Density in Undoped,Glycine-doped,and Cu-and-Glycine-Co-doped MgB2 Synthetized from nm-Boron and μm-Boron

Nano-boron (800 nm) and μm-boron (25 μm) precursor were used to synthetize glycine-doped, Cu-and-glycine-co-doped, and undoped MgB₂ samples at 800 ^°C. The C substitution level caused by glycine doping, the MgO content, and the full width at half maximum of the (101) peak for MgB₂ phase were compared to evaluate the critical current density (J _c) of the six samples. The undoped sample from the nm-boron powder showed enhanced J _c over the entire field in contrast with those from 25-um boron, since the excess MgO in nm-boron prepared sample serves as effective pinning centers. On the contrary, due to the reduced MgO pinning centers as well as the increase of the grain size, the glycine-doped nm-boron sample only enhanced the J _c performance in the high-field region (H>4.5 T), while the low-field J _c values showed a considerable decrease. For the Cu-and-glycine-co-doped sample, the J _c performance is nearly without regard to the size of the boron precursor as the high-field J _c of the nm-B sample decreased a little, while the low-field J _c remained at the same level as that of the μm-B sample.     

Relationship Between Annealing Time and Magnetic Properties in Bi-2212 Textured Composites

In this study, we report the physical and magnetic properties of Bi₂Sr₂CaCu₂O _x textured materials prepared by a LFZ melting technique and annealed for different times (60, 72, 96 and 120 h). SEM images of the annealed samples for 96 and 120 hours indicate very good alignment with the longitudinal rod axis. In all cases, X-ray diffraction patterns show that the Bi-2212 phase is the major one. The magnetization measurements have been carried out as a function of the magnetic field up to 9 kOe. J _c values of the samples were calculated by using the Bean model. The results indicate that the different annealing time has no significant effects on the T _c values but, significant change on the critical current values of samples, J _c, has been obtained for sample annealed at 96 hours. We also found that the maximum critical density of J _c is 5.5×10⁵ A/cm² at 10 K for the 96 hours annealed sample.     

Superconducting Properties of In Situ Mg1.05(B1−xCx)2 Doped with Melanin (C16H2O3N2) via Ultrasonication in Ethanol

In this paper, we have reported melanin (C₁₆H₂O₃N₂) as a dopant of MgB₂ for the first time. Here, the effects of melanin doping to the microstructures and superconducting properties of bulk MgB₂ are thoroughly studied from XRD, SEM, TEM, magnetization, and resistivity data. We have analyzed the critical current density (J _c), irreversibility field (H _irr), flux pinning, resistivity, lattice parameters, grain sizes, critical temperatures (T _c), and other microstructures of all the samples. We have varied the doping percentage according to the nominal atomic ratio of Mg_1.05(B_1?x C _x )₂, x=0,0.02,0.06,0.08,0.1. The J _c of all the melanin-doped samples are improved as compared to that of the undoped sample in high-field region (above 6 Tesla) at low temperature. The 8 and 10 % doped samples give the best results. The 8 % doped sample registers an enhancement of J _c by a factor of 3.6 at 7 T and 5 K as compared to that of the undoped one. But, in the low-field region, melanin doping reduces J _c. The H _irr shows remarkable enhancement at low temperatures below 20 K. The best value of H _irr was found for the 8 % doped sample. However, H _irr reduces at high temperatures above 20 K in all the melanin-doped samples. The volume pinning strength of all the doped samples is enhanced over the entire field range. Further improvement in superconducting properties can be achieved by further reducing the size of the melanin particles, increasing density, and improving the homogeneity of doping.     

MgB<Subscript>2</Subscript> with addition of Sb<Subscript>2</Subscript>O<Subscript>3</Subscript> obtained by spark plasma sintering technique

Superconducting bulks of MgB₂ with addition of Sb₂O₃ and Sb with different stoichiometric compositions ((MgB₂) + (Sb₂O₃) _x , x = 0.0025, 0.005, 0.015, and (MgB₂) + (Sb)_y, y = 0.01) were obtained by the Spark Plasma Sintering (SPS) technique. All added samples have high density, above 95% and critical temperature, T _c, of 38.1–38.6 K. This result and XRD data suggest that Sb does not enter the lattice of MgB₂. Impurity phases are Mg₃Sb₂, MgO, and MgB₄. The optimum addition is Sb₂O₃ for x = 0.005. This sample shows the critical current density, J _c(5 K, 0 T) = 4 × 10⁵ A/cm² and J _c(5 K, 7 T) = 6 × 10² A/cm², while the irreversibility field, H _irr (5 K, 100 A/cm²) = 8.23 T. Indicated values of J _c and H _irr are higher than for the pristine sample. The mechanism of J _c and H _irr increase in the Sb₂O₃ added samples is complex and composed of opposite effects most probably involving morphology elements, the presence of nano metric MgB₄ and the indirect influence of oxygen or oxygen and Sb. Crystallite size of MgB₂ is decreasing when Sb-based additions are introduced and the effect is stronger for the Sb-metal addition. The sample with Sb-metal addition does not improve J _c and H _irr when compared with pristine sample.     

Structural, electrical and optical properties of Si doped ZnO films grown by atomic layer deposition

Si doped ZnO (SZO) films with various Si concentrations were deposited by atomic layer deposition at 300 °C using triethyzinc, tris(dimethylamino)silane and H₂O₂ as the precursors. The influences of Si doping concentration on structural, electrical and optical properties of ZnO films have been investigated. All the films exhibited a highly preferential c-axis orientation. A minimum resistivity of 9.2 × 10^?4 Ω cm, with a carrier concentration of 4.3 × 10²⁰ cm^?3 and a Hall mobility of 15.8 cm²/Vs, was obtained for SZO film prepared with the Si concentration of 2.1 at%. The increase of conductivity with Si doping was attributed to the presence of Si in +3 valence state acting as donor in ZnO and the increases of oxygen vacancies with Si concentration as proven by XPS measurements. The optical bandgap of SZO films initially increased from 3.25 to 3.55 eV with increasing of Si concentration to 2.1 at%, then decreased with further increase of Si concentration. The blue shift of band gap of SZO films with increasing carrier concentration can be explained by the Burstein-Moss (B-M) effects.     

Effect of Cd Doping on Structure and Superconductivity in Mg0.5Cd0.5B2

The effect of Cd doping on structure and superconductivity in Mg_0.5Cd_0.5B₂ fabricated by a solid-state reaction at ambient pressure has been investigated. The resulting changes in crystal structure, superconducting transition temperature T _c and critical current density J _c are characterized by X-ray diffraction, dc magnetization, electrical resistance, and magnetic measurements. It reveals that Cd does not occupy the atomic Mg sites in the MgB₂ crystal structure, but merely reacts with Mg and forms a MgCd₃ phase. It is striking to note that although the nonsuperconducting phase MgCd₃ is as high as about 67 vol.% in Mg_0.5Cd_0.5B₂, the T _c of the doped sample drops only by about 1 K. Most important, a surprising improvement of J _c of 5.0 × 10⁵ A/cm² (5 K, 0 T) has been achieved in Mg_0.5Cd_0.5B₂. It is suggested that the improvement in J _c in Mg_0.5Cd_0.5B₂ is primarily due to pinning effects induced by MgCd₃. Also, it is thought that MgCd₃ may fill up gaps among grains in MgB₂ and produce better grain linkage, which may be another source of improvement in J _c in Mg_0.5Cd_0.5B₂.     

Effects of In-situ and Ex-situ Heat-Treatment Procedures on?the?Transport Properties of the MgB2 Superconducting Thin Films Fabricated by Ultrasonic Spray Pyrolysis (USP) System

Superconducting MgB₂ thin films have been prepared using Ultrasonic Spray Pyrolysis (USP) system. 2.4 MHz USP system and various solutions which contain different Mg, B and de-ionized water and LAPSA concentrations and gas atmospheres were used to obtain 500 nm to 1.0 ??m thick MgB₂ films. Some of the films produced were heat treated in-situ in the spraying chamber during deposition and some of them were annealed ex-situ in the tube furnace under Mg vapor. T _c and T _zero of the samples were obtained to be 39.5 K and 37.4, 39.5 and 37.0 for ex-situ and in-situ prepared films, respectively. The highest critical current density was obtained to be 4.12×10⁶ A?cm^?2 for ex-situ annealed films and 4.01×10⁶ A?cm^?2 for in-situ produced films. The result obtained indicated that the ex-situ preparation method provides improvement in the transport and magnetic properties.     

Improved critical current density in ex situ processed MgB2 tapes by the size reduction of grains and crystallites by high-energy ball milling

We have fabricated Fe-sheathed MgB₂ tapes through an ex situ process in a powder-in-tube (PIT) technique using powders ball milled under various conditions. Although the ex situ processed wires and tapes using the high-energy ball milled MgB₂ powders have been studied and the decrease of grain and crystallite sizes of MgB₂ and the critical current density (J_c) improvement of those conductors were reported so far, the use of filling powders milled at a higher rotation speed than previously reported further decreases the crystallite size and improves the J_c properties. The improved J_c values at 4.2 K and 10 T were nearly twice as large as those previously reported. Those milled powders and hence as-rolled tapes easily receive contamination in air. Thus, the transport J_c properties are easily deteriorated and scattered unless the samples are handled with care. The optimized heat treatment temperature (T_opt) of those tape samples at which best performance in the J_c property is obtained decreases by more than 100 °C, compared with that of tapes using the as-received MgB₂ powder.