High power GaN‐HEMT SPDT switches for microwave applications

In this article, the design, fabrication, and on‐wafer test of X‐Band and 2–18 GHz wideband high‐power SPDT MMIC switches in AlGaN/GaN technology are presented. The switches have demonstrated state‐of‐the‐art performance and RF fabrication yield better than 65%. Linear and power measurements for different control voltages have been reported and an explanation of the dependence of the power performances on the control voltage is given. In particular, the X‐band switch exhibits a 0.4 dB compression level at 10 GHz when driven by a 38 dBm input signal. The wideband switch shows a compression level of 1 dB at an input drive higher than 38 dBm across the entire bandwidth. © 2009 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2009.     

Complete parasitic‐capacitance‐shell extraction of high‐frequency switch‐HEMT equivalent‐circuit model

This paper presents a new solution to a particular problem of high electron‐mobility transistor (HEMT) equivalent‐circuit modeling, that is, complete parasitic‐capacitance‐shell extraction of high‐frequency single‐gate and dual‐gate switch‐based HEMTs, which is very important to the accuracy of high‐frequency HEMT switch models, but not important in the conventional common‐source HEMT modeling for amplifier‐applications. A full‐wave electromagnetic (EM) analysis based method is proposed to analytically extract the complete parasitic‐capacitance‐shell of single‐gate and dual‐gate switch‐based HEMTs. All the 6 parasitic capacitances of the single‐gate switch‐based HEMT and all the 10 parasitic capacitances of the dual‐gate switch‐based HEMT are extracted by linear equations. No resistance parameter is needed to calculate the capacitance‐to‐ground and the interelectrode‐capacitance, and for the first time, all the 10 parasitic capacitances of the dual‐gate switch‐based HEMT are completely considered and analytically extracted. Then, a consistent and systematic modeling procedure of single‐gate and dual‐gate switch‐based HEMT is verified. With the complete parasitic‐capacitance‐shells extracted, the accurate intrinsic model of the single‐gate HEMT can be directly embedded into the parasitic‐shell of the dual‐gate HEMT. The predicted scattering parameters of the single‐gate and dual‐gate series switches fit well with the measurements up to 40 GHz, and accurate linear scalability are also found.     

A HEMT large‐signal model for use in the design of microwave switching circuits

The nonlinear sources of switch‐HEMTs have been well analyzed by using the measured data. The small signal intrinsic capacitances (under both positive and negative V _ds operation) have been extracted by an extended small signal model. one‐dimension capacitance model has been effectively applied to model the small signal incremental capacitances directly extracted from the key operation region, which has also automatically taken into account the surface trapping effects. A new capacitance model has been effectively proposed to well fit the key nonlinear source (the deep subthreshold capacitance) of switch‐HEMTs. Simple switching function and additional voltage dependence have been applied to model the wide linear‐region (from high‐ V _gs region to deep subthreshold region) of channel current. On/off state small signal insertion loss, small signal isolation, weak harmonics, and power carrying capabilities are accurately predicted by the large signal model. The model shows very good convergence of circuit simulation. Meanwhile, the simple equations and distinguishing among the capacitances accurately make the scaling rules simple and accurate.     

On the performance of GaN‐on‐Silicon,Silicon‐Carbide,and Diamond substrates

In this article, threading dislocations and its impact on the electrical and thermal performance of GaN‐on‐Diamond (Dia), ‐SiC, and ‐Si high electron mobility transistor (HEMT) has been investigated. TCAD simulation of GaN‐HEMT is performed with various buffer traps to mimic the lattice mismatch/dislocation density at GaN/Si, GaN/SiC, and GaN/Dia interface. It has been found that, the dislocations not only induce traps, but also degrade the thermal conductivity of the GaN‐buffer. This accordingly could deteriorate the thermal characteristic of GaN‐on‐Dia, which has higher lattice mismatch with respect to GaN‐on‐SiC. This investigation showed that the growth process of GaN‐on‐Dia should be optimized in order to reduce the threading dislocations. This accordingly could dramatically further improve its outstanding thermal characteristics with respect to GaN‐on‐SiC and GaN‐on‐Si devices.     

High isolation dual‐frequency patch antenna integrated with cascade defected microstrip structure

This article presents a high‐isolation dual‐frequency rectangular patch antenna utilizing microstrip feed line integrated with a cascade defected microstrip structure (CDMS). Two types of CDMS are added, T‐shaped CDMS and Dumbbell‐T‐shaped CDMS. Simulation results show using these structures improve isolation up to 70 dB and reduce harmonic signals from transmitter. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.     

2–6 GHz GaN distributed power amplifier MMIC with tapered gate‐series/drain‐shunt capacitors

In this article, using a 0.25 μm GaN HEMT process, we present a 2–6 GHz GaN two‐stage distributed power amplifier MMIC that utilizes tapered gate series capacitors and nonuniform drain transmission lines with tapered shunt capacitors to simultaneously obtain a linear gain enhancement and optimum load line for each transistor. By using well‐derived equations to provide each transistor with the optimum load impedance and to tune the phase delay between the input and output transmission lines, the nonuniform distributed power amplifier is designed for second‐stage amplification, and satisfactory performance is demonstrated. The phase balance and tapering of the gate series capacitors have a role in improving the linear gain of the two‐stage amplifier. The measured data show a linear gain of 22 ± 1 dB, an input/output return loss of more than 15 dB, saturated output power of 41.2–43.1 dBm under a continuous‐wave mode, and a power‐added efficiency of 18–22% from 2 to 6 GHz which are very competitive values compared with previous works. © 2016 Wiley Periodicals, Inc. Int J RF and Microwave CAE 26:456–465, 2016.     

Genetic algorithm‐based neural‐network modeling approach applied to AlGaN/GaN devices

An accurate equivalent circuit large‐signal model (ECLSM) for AlGaN‐GaN high electron mobility transistor (HEMT) is presented. The model is derived from a distributed small‐signal model that efficiently describes the physics of the device. A genetic neural‐network‐based model for the gate and drain currents and charges is presented along with its parameters extraction procedure. This model is embedded in the ECLSM, which is then implemented in CAD software and validated by pulsed and continuous large‐signal measurements of on‐wafer 8 × 125‐μm GaN on SiC substrate HEMT. Pulsed IV simulations show that the model can efficiently describe the bias dependency of trapping and self‐heating effects. Single‐ and two‐tone simulation results show that the model can accurately predict the output power and its harmonics and the associated intermodulation distortion (IMD) under different input‐power and bias conditions. © 2012 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2013.     

Multibias and temperature dependence of the current‐gain peak in GaN HEMT

Thermal and multibias behavior of the peak in the short‐circuit current‐gain (h₂₁) has been investigated for a GaN HEMT, aiming to contribute to an extensive knowledge on it. To obtain a simple and complete insight of this phenomenon and its influence in device performance over operating conditions, high‐frequency multibias scattering (S‐) parameter measurements have been analyzed from low to high temperature. It has been observed that the current‐gain peak might get to be more or less serious depending on the working circumstances. The peak affecting h₂₁ has been successfully reproduced by using an equivalent‐circuit model. Moreover, a novel procedure has been developed to interpret this kind of phenomenon by quantifying the area of the current‐gain peak (ACGP), which is denoted as the area corresponding to h₂₁ curves with and without the peak. It is found that the ACGP is strongly dependent on bias and less dependent on temperature. The relevance of a comprehensive evaluation of the peak in h₂₁ lies in its usefulness for empowering RF engineers to efficiently consider it for both device modeling and circuit design.     

GaN‐based high‐output‐power blue laser diodes for display applications

Abstract— We succeeded in fabricating high‐output‐power blue (445 nm) laser diodes (LDs) with an output power of 500 mW. The operating current, voltage, and wall‐plug efficiency of these LDs were 480 mA, 4.8 V, and 21.7%, respectively. The lifetime of these LDs was estimated to be 10,000 hours under continuous‐wave operation at 25°C. From examination of the degradation mode, we found that the operating current seriously affects the lifetime of LDs. In the next stage, we will focuse on the optimization and sophistication of the manufacturing processes to fabricate longer‐lifetime (>30,000 hours) blue LDs.     

An improved empirical large‐signal model for the GaAs‐ and GaN‐based HEMTs

A complete empirical large‐signal model for the GaAs‐ and GaN‐based HEMTs is presented. Three generalized drain current I–V models characterized by the multi‐bias Pulsed I–V measurements are presented along with their dependence on temperature and quiescent bias state. The new I–V equations dedicated for different modeling cases are kept accurate enough to the higher‐order derivatives of drain‐current. Besides, an improved charge‐conservative gate charge Q–V formulation is proposed to extract and model the nonlinear gate capacitances. The composite nonlinear model is shown to accurately predict the S‐parameters, large‐signal power performances as well as the two‐tone intermodulation distortion products for various types of GaAs and GaN HEMTs. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE , 2011.     

Efficiency enhancement by employing the transistor nonlinear capacitors effects in a 6W hybrid X‐band Class‐J power amplifier

This article presents the design and fabrication of a 6 W X‐band hybrid Class‐J power amplifier (PA) based on a bare die GaN on SiC HEMT by accurate implementing the transistor nonlinear capacitor effects. The transistor input capacitor is precisely modelled and its nonlinearity effects on Class‐J performance is studied for the first time. It is shown that the harmonic generation property of the nonlinear input capacitor, especially at the second harmonic, can be of benefit to shape the transistor gate voltage as a quasi‐half wave sinusoidal waveform and consequently, it can improve the power added efficiency (PAE). A complete 3D thermal model of the power transistor is developed using ANSYS software and it is calibrated based on the thermal measured data. The PA achieves 13 dB average power gain over the frequency range of 8.8‐9.6 GHz. The drain efficiency and PAE are about 67% and 58% at 9.2 GHz, respectively.     

Bayesian inference‐based small‐signal modeling technique for GaN HEMTs

A new modeling methodology for gallium nitride (GaN) high‐electron‐mobility transistors (HEMTs) based on Bayesian inference theory, a core method of machine learning, is presented in this article. Gaussian distribution kernel functions are utilized for the Bayesian‐based modeling technique. A new small‐signal model of a GaN HEMT device is proposed based on combining a machine learning technique with a conventional equivalent circuit model topology. This new modeling approach takes advantage of machine learning methods while retaining the physical interpretation inherent in the equivalent circuit topology. The new small‐signal model is tested and validated in this article, and excellent agreement is obtained between the extracted model and the experimental data in the form of dc I–V curves and S‐parameters. This verification is carried out on an 8 × 125 μm GaN HEMT with a 0.25 μm gate feature size, over a wide range of operating conditions. The dc I–V curves from an artificial neural network (ANN) model are also provided and compared with the proposed new model, with the latter displaying a more accurate prediction benefiting, in particular, from the absence of overfitting that may be observed in the ANN‐derived I–V curves.     

采用MOSFET的高速截流开关

用P -MOSFET构成快速截流电子开关 ,将其串联在负载与直流电源之间 ,在负载电流超过允许值时 ,迅速中断供电 ,从而组成具有“本质安全”输出特性的直流电源。该电源可在有爆炸性气体存在的环境中工作。     

High‐efficiency transmission‐line inverse Class F power amplifiers for 2‐GHz WCDMA systems

In this article, a novel load‐network solution to implement the transmission‐line inverse Class F power amplifiers for base station WCDMA applications is presented. The theoretical analysis is based on an analytical derivation of the optimum load‐network parameters to control the second and third harmonics at the device output, including the device output parasitic shunt capacitance and series inductance. The transmission‐line inverse Class F LDMOSFET and GaN HEMT power amplifiers using NXP BLF6G22LS‐75 and CREE CGH27060F devices, respectively, were designed and measured. The high‐performance results with the drain efficiency of 70.2% and power gain of 18.0 dB for a 60‐W LDMOSFET power amplifier and with the drain efficiency of 82.3% and power gain of 14.3 dB for a 50‐W GaN HEMT power amplifier were achieved at an operating frequency of 2.14 GHz. © 2011 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.     

Generalized high‐isolation n‐way Gysel power divider with arbitrary power ratio and different real terminated impedances

An exact closed‐form design approach for a generalized high‐power n‐way Gysel power divider is proposed. The power divider could be designed to achieve an arbitrary power ratio with the flexible multiway application, arbitrary real terminated impedance, excellent isolation, and easy fabrication through both planar and three‐dimensional structures. Moreover, this improved power divider could maintain high power processing capacity through the coaxial cavity transmission line and grounding resistances. The exact analytical solutions related to ideal port matching and high isolation are obtained based on the circuit and transmission‐line theory. To verify the proposed approach, a compact 3‐way coaxial power divider with a pre‐designed power ratio of 1:1.5:2 and four different real terminated impedances of 50, 55, 60, and 65 Ω is designed and fabricated. Excellent agreement is achieved between the simulated and measured results. Measurements from 4.7 to 5.7 GHz show that the return losses of all input and output ports are better than 15 dB. The maximum insertion loss is 0.5 dB, and the phase imbalance is approximately less than 6.1°. In addition, the isolation between any two output ports is better than 23 dB from 4.5 to 6 GHz. Meanwhile, the power handling capability can reach the maximum power of the commercial 50 Ω SMA connectors (2.098 kW).     

Large‐signal modeling methodology for GaN HEMTs for RF switching‐mode power amplifiers design

A large‐signal model for GaN HEMT transistor suitable for designing radio frequency power amplifiers (PAs) is presented along with its parameters extraction procedure. This model is relatively easy to construct and implement in CAD software since it requires only DC and S‐parameter measurements. The modeling procedure was applied to a 4‐W packaged GaN‐on‐Si HEMT, and the developed model is validated by comparing its small‐ and large‐signal simulation to measured data. The model has been employed for designing a switching‐mode inverse class‐F PA. Very good agreement between the amplifier simulation and measurement shows the validity of the model. © 2010 Wiley Periodicals, Inc. Int J RF and Microwave CAE, 2011.     

Bi-CMOS工艺的高精度单向模拟开关研究

分析了一种以Bi-CMOS工艺实现的高精度单向隔离模拟开关，这种开关用在高速A/D转换器中使电路结构大为简化，通过对开关特性的理论分析=电路模拟及工艺验证，证明了这种模拟开关所具有的高速可控性和传输信号的精度均优于双极工艺所实现的单向隔离模拟开关。     

High‐efficiency broadband GaN HEMT power amplifier based on harmonic‐tuned matching approach

A new type of broadband class‐F power amplifier is proposed with GaN HEMT device CGH40010F. And a new harmonic control network is designed by improving the traditional harmonic control network, with the second harmonic and third harmonic broadband matched, which effectively solves the problem of class‐F power amplifier in the design of the bandwidth. To improve the efficiency of power amplifier, all high‐order harmonics are controlled in a certain bandwidth. CGH40010F power transistor is utilized to build the power amplifier working from 1.5 to 2.6 GHz, with the measured saturated output power >10 W, drain efficiency 60%‐80%, and gain >10 dB. The second and the third harmonic suppression levels are maintained from ?19.13 to ?47.44 dBc and from ?16.18 to ?47.9 dBc, respectively. The simulation and measurement results of the proposed power amplifier show good consistency.     

大功率高频开关电源变压器设计与损耗分析

对高频开关电源的变压器建立了实际等效电路,建立了变压器功率损耗模型.重点对高频开关电源变压器的损耗进行了分析与计算并提出了解决办法,对25kW高频开关电源进行了设计与计算.对设计的开关电源进行数据测试,结果显示该开关电源大大提高了功率因数和效率.     

GaN‐based emissive microdisplays: A very promising technology for compact,ultra‐high brightness display systems

High‐brightness GaN‐based emissive microdisplays can be fabricated with different approaches that are listed and described. They consist either of hybridizing a GaN LED array on a CMOS circuit or building a monolithic component on a single substrate. Using the hybridization approach, two types of 10‐μm pixel pitch GaN microdisplay prototypes were developed: (1) directly driven, 300 × 252 pixels and (2) active‐matrix, 873 × 500 pixels. Brightness as high as 1 × 10⁶ and 1 × 10⁷ cd/m² for blue and green arrays, respectively, were reached. GaN‐based emissive microdisplays are suitable for augmented reality systems or head‐up displays, but some challenges remain before they can be put in production.