0.5‐V bulk‐driven differential amplifier

A new 0.5‐V fully differential amplifier is proposed in this article. The structure incorporates a differential bulk‐driven voltage follower with conventional gate‐driven amplification stages. The bulk‐driven voltage follower presents differential gain equal to unity while suppressing the input common‐mode voltage. The amplifier operates at a supply voltage of less than 0.5 V, performing input transconductance almost equal to a gate transconductance and relatively high voltage gain without the need for gain boosting. The circuit was designed and simulated using a standard 0.18‐µm CMOS n‐well process. The low‐frequency gain of the amplifier was 56 dB, the unity gain bandwidth was approximately 3.2 MHz, the spot noise was 100 nV/√Hz at 100 kHz and the current consumption was 90 μΑ. Copyright © 2012 John Wiley & Sons, Ltd.     

A 0.5 V bulk‐driven voltage follower/DC level shifter and its application in class AB output stage

A simple realization of a 0.5 V bulk‐driven voltage follower/direct current (DC) level shifter designed in a 0.18 µm CMOS technology is presented in the paper. The circuit is characterized by large input and output voltage swings and a DC voltage gain close to unity. The DC voltage shift between input and output terminals can be regulated in a certain interval around zero, by means of biasing current sinks. An application of the proposed voltage follower circuit for realization of a low‐voltage class AB output stage has also been described in the paper. Finally, the operational amplifier exploiting the proposed output stage has been presented and evaluated in detail. Copyright © 2014 John Wiley & Sons, Ltd.     

A 7.5‐μW 0.08‐mm2 single‐ended SC delta‐sigma ADC for acoustic sensor applications

This study presents an ultra‐low‐power, small‐size, 1‐bit, single‐ended, and switched‐capacitor (SC) delta‐sigma analog‐to‐digital converter (ADC) for wireless acoustic sensor nodes. This wireless sensor node has a delta‐sigma ADC that converts the sensed signal to a digital signal for convenient data processing and emphasizes the features of small size and low‐power consumption. The chip area of the delta‐sigma ADC is dominated by the capacitor; therefore, a novel common‐mode (CM) controlling technique with only transistors is proposed. This ADC achieves an extremely small size of 0.08 mm² in a 130‐nm CMOS process. The conventional operational transconductance amplifiers (OTAs) are replaced by inverters in the weak inversion region to achieve high power efficiency. At 4‐MHz sampling frequency and 0.7‐V power supply voltage, the delta‐sigma ADC achieves a 55.8‐dB signal‐to‐noise‐plus‐distortion ratio (SNDR) and a 298‐fJ/step figure‐of‐merit (FOM) in a signal bandwidth of 25 kHz, while consuming only 7.5 μW of power. Copyright © 2015 John Wiley & Sons, Ltd.     

0.3‐V bulk‐driven programmable gain amplifier in 0.18‐µm CMOS

A new solution for an ultra low voltage bulk‐driven programmable gain amplifier (PGA) is described in the paper. While implemented in a standard n‐well 0.18‐µm complementary metal–oxide–semiconductor (CMOS) process, the circuit operates from 0.3 V supply, and its voltage gain can be regulated from 0 to 18 dB with 6‐dB steps. At minimum gain, the PGA offers nearly rail‐to‐rail input/output swing and the input referred thermal noise of 2.37 μV/Hz^1/2, which results in a 63‐dB dynamic range (DR). Besides, the total power consumption is 96 nW, the signal bandwidth is 2.95 kHz at 5‐pF load capacitance and the third‐order input intercept point (IIP₃) is 1.62 V. The circuit performance was simulated with LTspice. Copyright © 2016 John Wiley & Sons, Ltd.     

A 0.8‐V supply bulk‐driven operational transconductance amplifier and Gm‐C filter in 0.18 µm CMOS process

A low voltage bulk‐driven operational transconductance amplifier (OTA) and its application to implement a tunable Gm‐C filter are presented. The linearity of the proposed OTA is achieved by nonlinear terms cancelation technique, using two paralleled differential topologies with opposite signs in the third‐order harmonic distortion term of the differential output current. The proposed OTA uses 0.8 V supply voltage and consumes 31.2 μW. The proposed OTA shows a total harmonic distortion of better than ?40 dB over the tuning range of the transconductance, by applying 800 mV_ppd sine wave input signal with 1 MHz frequency. The OTA has been used to implement a third‐order low‐pass Gm‐C filter, which can be used for wireless sensor network applications. The filter can operate as the channel select filter and variable gain amplifier, simultaneously. The gain of the filter can be tuned from ?1 to 23 dB, which results in power consumptions of 187.2 to 450.6 μW, respectively. The proposed OTA and filter have been simulated in a 0.18 µm CMOS technology. Simulations of process corners and temperature variations are also included in the paper. Copyright © 2014 John Wiley & Sons, Ltd.     

A low‐power four‐stage amplifier for driving large capacitive loads

A four‐stage amplifier with a new and efficient frequency compensation topology is presented in this paper. The new compensation scheme applies a Miller capacitor as the main negative feedback, a resistor and a capacitor in series as a load for one of the intermediate stages, and two feedforward paths. In order to design the amplifier and acquire circuit parameters, small signal analyses have been carried out to derive the signal transfer function and the pole‐zero locations. The proposed amplifier was designed and implemented in a standard 90 nm CMOS process with two heavy capacitive loads of 500 pF and 1 nF. The simulation results show that when driving a 500 pF load, the amplifier has a gain‐bandwidth product of 18 MHz consuming only 40.9 μW. With a 1 nF capacitive load, the proposed amplifier achieves 15.1 MHz gain‐bandwidth product and dissipates 55.2 μW from a single 0.9 V power supply. Copyright © 2013 John Wiley & Sons, Ltd.     

Design of a low‐power high open‐loop gain operational amplifier for capacitively‐coupled instrumentation amplifiers

We present the design of a low‐power high open‐loop gain opamp for use in chopper‐stabilized capacitively coupled instrumentation amplifiers (CCIAs). The opamp utilizes the current‐reuse folded‐cascode topology and a low‐power gain‐boosting technique to maximize its power efficiency and open‐loop gain. The proposed technique is applied to the designs of two CCIAs: the conservative CCIA with a moderate current scaling ratio and the stringent CCIA with a very high current scaling ratio. Utilizing the current scaling ratio of 4:1, the conservative CCIA, designed and fabricated in a 0.18 μ m CMOS process, consumes a total current of 1.69 μ A from a 0.8‐V supply voltage and achieves a thermal noise floor of 56.5 nV/ . Utilizing the current scaling ratio of 38:1, the stringent CCIA, designed and simulated in a 0.13 μ m CMOS process, consumes a total current of 1.4 μ A and achieves a thermal noise floor of 48 nV/ . The proposed design technique should benefit the designs of low‐power instrumentation amplifiers in advanced processes in which channel‐length modulation and the limited current consumption and supply voltage make the designs of high open‐loop gain opamps difficult. Copyright © 2017 John Wiley & Sons, Ltd.     

Positive feedback for gain enhancement in sub‐100 nm multi‐GHz CMOS amplifier design

The use of positive feedback as a solution to intrinsic gain degradation in scaled CMOS technologies, such as 65 nm and below, is discussed in detail. Criteria for increasing gain while keeping the system stable are derived using a positive feedback amplifier model. These criteria are shown to provide significant gain enhancement in silicon. This work extends the previously reported DC gain analysis to include evaluation of additional effects of positive feedback as well an investigation of the frequency behavior using S‐parameter measurements in silicon. These S‐parameter measurements of fully differential positive feedback amplifiers designed in TSMC's 65 nm technology show gain enhancements of up to 26.7 dB at frequencies up to 8.5 GHz. Copyright © 2013 John Wiley & Sons, Ltd.     

1‐V continuous‐time equalizers for multi‐gigabit short‐haul optical fiber communications

Two new CMOS analog continuous‐time equalizers for high‐speed short‐haul optical fiber communications are presented in this paper. The proposed structures compensate the limited bandwidth‐length product of 1‐mm step‐index polymer optical fiber channels (45 MHz, 100 m) and have been designed in a standard 0.18‐µm CMOS process. The equalizers are aimed for multi‐gigabit short‐range applications, targeting up to 2 Gb/s through a 50‐m step‐index polymer optical fiber. The prototypes operate with a single supply voltage of only 1 V and overcome the severe limitations suffered by the widely used degenerated differential pair caused by the low supply voltage. Copyright © 2012 John Wiley & Sons, Ltd.     

±0.18‐V supply voltage gate‐driven PGA with 0.7‐Hz to 2‐kHz constant bandwidth and 0.15‐μW power dissipation

A simple gate‐driven scheme to reduce the minimum supply voltage of AC coupled amplifiers by close to a factor of two is introduced. The inclusion of a floating battery in the feedback loop allows both input terminals of the op‐amp to operate very close to a supply rail. This reduces essentially supply requirements. The scheme is verified experimentally with the example of a PGA that operates with ±0.18‐V supply voltages in 0.18‐μm CMOS technology and a power dissipation of about 0.15 μW. It has a 4‐bit digitally programmable gain and 0.7‐Hz to 2‐kHz true constant bandwidth that is independent on gain with a 25‐pF load capacitor. In addition, simulations of the same circuit in 0.13‐μm CMOS technology show that the proposed scheme allows operation with ±0.08‐V supplies, 7.5‐Hz to 8‐kHz true constant bandwidth with a 25‐pF load capacitor, and a total power dissipation of 0.07 μW.     

Low‐power,low‐area preamplifier for ultra high‐speed multi‐channel optical communication system

A novel circuit technique was applied to the design of a preamplifier for ultra high‐speed short‐distance parallel optical communication system in standard 180‐nm CMOS technology. This circuit is featured by low power, low area as well as high gain bandwidth product, and suited for applications in low‐cost process. The restraint on voltage headroom as bottleneck in traditionally adopted regulated cascode configuration has been fundamentally analyzed and lifted by feed‐forward common gate stage to achieve high gain bandwidth product under limited f_T and strict power restriction. Complex poles were carefully assigned to further attain bandwidth extension without sacrifice on power, noise, and chip area. No additional peaking techniques and subsequent gain‐boosting stages are adopted, which makes the design simple and favorable in low‐cost high‐density multi‐channel optical communication system. The preamplifier provides a trans‐impedance gain of up to 52 dBΩ and a 3‐dB bandwidth of 8.4 GHz. Operating under a 1.8‐V supply, the power dissipation is 8 mW, and the chip area is only 0.075×0.08 mm. The measured average input‐referred noise–current spectral density is . Copyright © 2011 John Wiley & Sons, Ltd.     

0.5‐V bulk‐driven OTA and its applications

A new 0.5‐V bulk‐driven operational transconductance amplifier (OTA), designed in 50 nm CMOS technology, is presented in the paper. The circuit is characterized by improved linearity and dynamic range obtained for MOS devices operating in moderate inversion region. Some basic applications of the OTA such as a voltage integrator and a second‐order low‐pass filter have also been described. The filter is compared to other low‐voltage filters presented in the literature. Copyright © 2013 John Wiley & Sons, Ltd.     

Design approach for high‐bandwidth low‐power three‐stage operational amplifiers

A new design approach to optimize the frequency compensation network of three‐stage operational amplifiers (op‐amps) is presented. The proposed criterion is aimed at maximizing the bandwidth of well‐established three‐stage op‐amps using Nested‐Miller Compensation with feedforward tranconductance stage and nulling resistor (NMCFNR). As shown by design examples in a commercial 0.35‐µm CMOS technology, the proposed approach allows the amplifier bandwidth to be enhanced significantly with respect to that resulting from using existing design strategies for NMCFNR op‐amps. It is also demonstrated that NMCFNR op‐amps, designed according to the proposed method, even guarantee larger values of the gain‐bandwidth product than three‐stage amplifiers using more complicated frequency compensation techniques, such as AC boosting compensation or damping‐factor control frequency compensation. Copyright © 2010 John Wiley & Sons, Ltd.     

High-gain,high-CMRR class AB operational transconductance amplifier based on the flipped voltage follower

A novel class AB operational transconductance amplifier (OTA) topology is proposed, based on a class AB flipped voltage follower. The OTA has class AB behavior, with current boosting both for the load and the compensation capacitors. It has a high gain of (g_mr₀)⁴ , obtained using a two-stage structure with cascoded stages, and is a two-stage Miller-compensated amplifier employing multipath to remove the positive zero. It has close to rail-to-rail output swing (limited by cascoding) and very low common-mode gain thanks to a replica technique (allowing the use of low-power common-mode feedback [CMFB] loops). Ninety-two decibels of gain and 176 dB of common-mode rejection ratio (CMRR) without CMFB are achieved using a 40-nm complementary metal-oxide semiconductor (CMOS) process. The OTA is used to design a low-power sample-and-hold amplifier (SHA) operating at 5 MSps, a typical application for CMOS OTAs, which has been chosen to verify the proposed circuit's performance and to show that the OTA is robust in Monte Carlo simulations under process variations and mismatches in an actual application.     

A 120–420 MHz delay‐locked loop with multi‐band voltage‐controlled delay unit

A low‐jitter and low‐power dissipation delay‐locked loop (DLL) is presented. A proposed multi‐band voltage control delay unit (MVCDU) is employed to extend the operation frequency of the DLL by controlling the delay cell within the MVCDU. The jitter of DLL is reduced due to MVCDU's low sensitivity. The delay cell in the MVCDU employs a differential configuration to further reduce the noise impact from the fluctuation in the supply and ground voltage. The operating frequency of the proposed DLL ranges from 120 to 420 MHz. The proposed design has been fabricated in a TSMC 0.18µm CMOS process. The measured RMS and peak‐to‐peak jitters are 4.86 and 34.55 ps, respectively, at an operating frequency of 300 MHz. The power dissipation is below 14.85 mW at an operating frequency of 420 MHz. Copyright © 2010 John Wiley & Sons, Ltd.     

Low‐noise low‐power front‐end logarithmic amplifier for neural recording system

In this work, a low‐power, low‐noise logarithmic preamplifier for biopotential and neural recording application is presented. The amplifier is based on a linear limit logarithmic amplifier technique, and an active filter as a DC cancellation filter has been included to its input in order to eliminate DC offsets, which are produced at the electrode–tissue interface. This system has been simulated in a UMC standard 90‐nm 1P9M CMOS process. Five dual gain stages are used to produce the required linear limit logarithmic amplifier. The dynamic range of the amplifier is measured to be 48 dB which covers the signals with amplitude from 20 μV to 5 mV. The amplifier consumes 23.5 μW from a 1.2‐V power supply and has a maximum gain of 69.8 dB. The simulated input referred noise is 5.3 μV over 0.1 Hz to 20 kHz. Copyright © 2012 John Wiley & Sons, Ltd.     

Multiple output differential OTA with linearizing bulk‐driven active‐error feedback loop for continuous‐time filter applications

A CMOS circuit realization of a highly linear multiple‐output differential operational transconductance amplifier (OTA) has been proposed. The presented approach exploits a differential pair as an input stage with both the gate and the bulk terminals as signal ports. For the proposed OTA, improved linearity is obtained by means of the active‐error feedback loop operating at the bulk terminals of the input stage. SPICE simulations of the OTA show that, for 0.35 µm AMS process, total harmonic distortion at 1.36Vpp is less than 1% with dynamic range equal to 60.1 dB at power consumption of 276 μW from 3.3 V supply. As an example, both single output and dual differential OTAs are used to design third‐order elliptic low‐pass filters. The cut‐off frequency of the filters is 1 MHz. The power consumption of the OTA‐C filter utilizing the dual output differential OTA is reduced to 1.24 mW in comparison to 2.2 mW consumed by the single output differential OTA‐C filter counterpart. Copyright © 2014 John Wiley & Sons, Ltd.     

Design of a 75‐nW, 0.5‐V subthreshold complementary metal–oxide–semiconductor operational amplifier

This work focuses on the subthreshold design of ultra low‐voltage low‐power operational amplifiers. A well‐defined procedure for the systematic design of subthreshold operational amplifiers (op‐amps) is introduced. The design of a 0.5‐V two‐stage Miller‐compensated amplifier fabricated with a 0.18‐µm complementary metal–oxide–semiconductor process is presented. The op‐amp operates with all transistors in subthreshold region and achieves a DC gain of 70 dB and a gain–bandwidth product of 18 kHz, dissipating just 75 nW. The active area of the chip is ≈0.057 mm². Experimental results demonstrate that well‐designed subthreshold op‐amps are a very attractive solution to implement sub‐1‐V energy‐efficient applications for modern portable electronic systems. A comparative analysis with low‐voltage, low‐power op‐amp designs available in the literature highlights that subthreshold op‐amps designed according to the proposed design procedure achieve a better trade‐off among speed, power, and load capacitance. Copyright © 2013 John Wiley & Sons, Ltd.     

Low‐frequency noise analysis and minimization in Gilbert‐cell‐based mixers for direct‐conversion (zero‐IF) low‐power front‐ends

Low‐frequency (flicker) noise is one of the most important issues in the design of direct‐conversion zero‐IF front‐ends. Within the front‐end building blocks, the direct‐conversion mixer is critical in terms of flicker noise, since it performs the signal down‐conversion to baseband. This paper analyzes the main sources of low‐frequency noise in Gilbert‐cell‐based direct‐conversion mixers, and several issues for minimizing the flicker noise while keeping a good mixer performance in terms of gain, noise figure and power consumption are introduced in a quantitative manner. In order to verify these issues, a CMOS Gilbert‐cell‐based zero‐IF mixer has been fabricated and measured. A flicker noise as low as 10.4 dB is achieved (NF at 10 kHz) with a power consumption of only 2 mA from a 2.7 V power supply. More than 14.6 dB conversion gain and noise figure lower than 9 dB (DSB) are obtained from DC to 2.5 GHz with an LO power of ?10 dBm, which makes this mixer suitable for a multi‐standard low‐power zero‐IF front‐end. Copyright © 2008 John Wiley & Sons, Ltd.     

A 0.75‐V, 4‐μW, 15‐ppm/°C, 190 °C temperature range,voltage reference

A low‐voltage, low‐power, low‐area, wide‐temperature‐range CMOS voltage reference is presented. The proposed reference circuit achieves a measured temperature drift of 15 ppm/°C for an extremely wide temperature range of 190 °C (?60 to 130 °C) while consuming only 4 μW at 0.75 V. It performs a high‐order curvature correction of the reference voltage while consisting of only CMOS transistors operating in subthreshold and polysilicon resistors, without utilizing any diodes or external components such as compensating capacitors. A trade‐off of this circuit topology, in its current form, is the high line sensitivity. The design was fabricated using TowerJazz semiconductor's 0.18‐µm standard CMOS technology and occupies an area of 0.039 mm². The proposed reference circuit is suitable for high‐precision, low‐energy‐budget applications, such as mobile systems, wearable electronics, and energy harvesting systems. Copyright © 2015 John Wiley & Sons, Ltd.