纤维种类对C/C-SiC复合材料力学性能的影响

分别以PAN基预氧丝和炭纤维为原材料,采用准三维针刺工艺制备2种纤维预制体,然后采用化学气相渗积(CVI)工艺制备出密度相近的C/C复合材料坯体,最后对坯体进行熔融渗硅处理得到C/C-SiC复合材料,研究了纤维种类对C/C-SiC复合材料力学性能和断裂机理的影响。结果表明:纤维种类对C/C-SiC复合材料的力学性能和断裂机理有显著影响,炭纤维增强C/C-SiC复合材料的弯曲强度较高,达到140.3 MPa,断裂失效模式为"假塑性"断裂;预氧丝C/C-SiC复合材料的弯曲强度较低,为112.6 MPa,呈脆性断裂。产生以上结果的主要原因是增强纤维的力学性能不同,纤维表面形貌不同,进而导致所制备的C/C-SiC复合材料增强纤维与基体的结合强度不同。     

C/C多孔体对C/C-SiC复合材料微观结构和弯曲性能的影响

以4种纤维含量相同(32%,体积分数,下同),用化学气相渗透(chemical vapor infiltration,CVI)法制备了4种密度的碳纤维增强碳(carbon fiber reinforced carbon,C/C)多孔体,基体炭含量约20%～50%.利用液相渗硅法(liquid silicon infiltration,LSI)制备了C/C-SiC复合材料,研究了C/C多孔体对所制备的C/C-SiC复合材料微观结构和弯曲性能的影响.结果表明:不同密度的C/C多孔体反应渗硅后,复合材料的物相组成均为SiC,C及单质Si;随着C/C多孔体中基体炭含量的增加,C/C-SiC复合材料中SiC含量逐渐减少而热解炭含量逐渐增加.C/C-SiC复合材料弯曲强度随着材料中残留热解炭含量增加而逐渐增加,热解炭含量为约42%的C/C多孔体所制备的C/C-SiC复合材料的弯曲强度最大,达到320 MPa.     

TDE-85/AG-80环氧树脂基复合材料微观形貌与力学性能分析

选用两种耐高温多官能团环氧树脂TDE-5和AG-80为基体,T300碳纤维为增强体制备了复合材料单向板,纤维体积含量均为60％。实验测得TDE-85树脂基体复合材料单向板的弯曲模量为74．26GPa,弯曲强度为1061．4MPa,层间剪切强度（ILSS）为54．05MPa;AG-80树脂基体复合材料单向板弯曲模量为55．73GPa,弯曲强度为840．52MPa,层间剪切强度（ILSS）为44．84MPa。前者的弯曲强度、弯曲模量与剪切强度也分别高出后者26．3％、33．2％与20．5％。实验对弯曲试样断口微观形貌的受压部分和受拉部分进行了SEM和高倍数码显微镜观察。结果显示,AG-80树脂基与碳纤维的界面结合情况较差,纤维成束被拔出,纤维表面几乎没有树脂。TDE-85树脂基与碳纤维界面结合情况较好,纤维与树脂结合比较紧密,断面较为平整,只有少量纤维拔出,表面粘附大量树脂。     

多尺度碳/碳复合材料力学性能研究

碳/碳(C/C)复合材料在服役过程中基体热解碳(PyC)强度低、脆性大,导致基体开裂、界面层脱黏等结构失效现象频发,严重限制其在特种环境中的应用。提出利用化学气相渗透法构建碳纤维与基体间的低织构热解碳界面层,采用电泳共沉积法掺杂碳纳米管(CNTs)、碳化硅纳米线(SiCnws)于碳纤维表面,构建纳米纤维-碳纤维多尺度预制体,实现多尺度C/C复合材料的制备和改性。研究发现,CNTs&SiCnws掺杂能促进C/C复合材料的弯曲性能、层间剪切性能和面内压缩性能的改善。弯曲、层间剪切、面内压缩强度随CNTs&SiCnws含量的增加均表现为“先升高后降低”的规律,CNTs&SiCnws可诱导细化PyC结构,避免基体微观缺陷的产生,提高纤维与基体的界面结合力,达到协同增强多尺度C/C复合材料的效果。     

基体改性对碳纤维增韧碳化硅复合材料结构与性能的影响

采用化学气相浸渗法对2D C/SiC复合材料进行基体改性,制备了二维碳纤维增韧碳-碳化硅二元基复合材料(two dimensional carbon fiber reinforced C-SiC binary matrix composites,2D C/C-SiC).2D C/C-SiC复合材料的基体为热解碳和碳化硅交替叠层的多层基体.研究了2D C/C-SiC复合材料的微观结构,比较了2DC/SiC复合材料和2DC/C-SiC复合材料的力学性能及断口形貌.结果表明:2DC/C-SiC复合材料可在基本保持2DC/SiC复合材料抗弯强度的基础上,其断裂韧性得到显著提高.基体改性的效果明显.纤维的逐级拔出是断裂韧性提高的原因.     

碳纤维增强树脂复合材料界面效应的研究

在一立方厘米的碳纤维增强树脂复合材料(CFRP)中,碳纤维(CF)与树脂的接触界面高达4000平方厘米左右。两相界面间的粘结程度是决定层问剪切强度(ILSS)的主要因素。CF经表面处理后,可改善两相间的粘接,从而使ILSS得到显著提高。用扫描电镜研究剪切断面已证实了这点。     

C/C预制体密度和反应温度对RMI法制备C/C-SiC复合材料力学性能和微观结构的影响

研究C/C预制体密度和反应温度对RMI法制备C/C-SiC复合材料密度、弯曲强度和微观结构的影响。实验通过化学气相渗透法(CVI)制备密度分别为1.2g/cm~3、1.4g/cm~3和1.6g/cm~3的低密度C/C多孔预制体,采用反应熔渗法(RMI)制备密度分别为2.21g/cm~3、2.18g/cm~3和1.82g/cm~3的C/C-SiC复合材料;将CVI制备的低密度C/C多孔预制体,采用RMI法在1500℃、1650℃和1800℃的反应温度下制备密度分别为1.79g/cm~3、2.18g/cm~3和2.41g/cm~3的C/C-SiC复合材料。结果表明:随着C/C预制体密度增加,C/C-SiC复合材料密度不断降低,弯曲强度呈先上升后下降的趋势,在C/C预制体密度为1.4g/cm~3时,材料的性能达到最优状态,材料的密度为2.18g/cm~3,弯曲强度为196.7MPa;随着RMI反应温度增加,C/C-SiC复合材料密度不断升高,材料弯曲强度呈先上升后下降的趋势,在反应温度为1650℃时,材料性能达到最优状态,材料密度为2.18g/cm~3,弯曲强度为196.7MPa。     

C/C多孔体热处理温度对C/C-SiC复合材料微观结构和热学性能的影响

以针刺网胎无纬布为预制体,采用化学气相渗透(CVI)、压力浸渍树脂/炭化(PIC)及反应熔体浸渗法(RMI)等组合工艺快速制备C/C-SiC复合材料。研究了C/C多孔体的高温热处理温度对C/C-SiC复合材料微观结构和热学性能的影响,结果表明:多孔体经高温热处理后密度有所减小而孔隙率增大;相较于1800℃热处理,多孔体经2200℃热处理后制备的C/C-SiC复合材料密度更大(ρ=2.12g/cm3),孔隙率更低(η=2.7%),SiC基体含量更高(ω=41.11%);C/C-SiC复合材料的比热容和平均热膨胀系数随着温度的升高而增大,而热扩散系数和导热系数随着温度的升高不断减小;多孔体经2200℃热处理后制备的C/C-SiC复合材料X-Y向具有更大的导热系数和更小的热膨胀系数,其室温下的导热系数为83.120W/(m·K),室温~1000℃的平均热膨胀系数为1.608×10-6/℃。     

CF/纳米SiO_2改性树脂复合材料界面性能研究

本文以纳米SiO2改性树脂作为树脂基体,以连续碳纤维作为增强体制备复合材料,研究了纳米SiO2掺入树脂中百分含量对树脂基体与增强体之间的界面性能的影响。通过对树脂基体与增强体纤维浸润性、微脱粘、层间剪切强度和扫描电子显微镜,对复合材料界面性能测试和表征。结果表明,随着纳米SiO2含量的增加,常温下,基体树脂和增强体纤维浸润性能下降,单丝纤维与树脂微球的界面剪切强度和复合材料单向板层间剪切强度在某一含量范围均有所提高。     

芳纶纤维增强树脂基复合材料的界面粘结性能研究

为了改善芳纶纤维增强树脂基复合材料的界面粘结性能,从树脂基体入手,依据相似相容原理和芳纶的结构特点,合成出新型热固性树脂(AFR–T)用作芳纶复合材料的基体,以未经表面处理的芳纶作增强材料,采用热压成型法制备了AFR–T/芳纶纤维复合材料,并通过测定溶度参数、接触角、线膨胀系数、层间剪切强度(ILSS)和横向拉伸强度等方法研究了复合材料的界面粘结性能。结果表明,AFR–T树脂浇注体与芳纶的溶度参数相近,AFR–T树脂溶液在芳纶纸表面的接触角为36.9°,小于环氧树脂(EP)溶液与芳纶纸的接触角(53.2°),说明AFR–T树脂对芳纶的浸润性优于EP;AFR–T/芳纶纤维复合材料的ILSS和横向拉伸强度为73.0 MPa和25.3 MPa,分别比EP/芳纶纤维复合材料提高了25.9%和32.5%,这表明AFR–T树脂与芳纶纤维之间的浸润性和界面粘结性能较好。     

Combustion of silicon powders containing organic additives in nitrogen gas under pressure: 2. Composition of combustion products

Combustion of silicon powders containing organic dopants in nitrogen gas under pressure was found to yield a mixture of α-Si₃N₄, β-Si₃N₄, SiC, and Si₂N₂O. Relative amount of these compounds in combustion product was found to depend on the pressure of nitrogen gas, type and concentration of dopants, combustion geometry, and cooling rate. The formation of α-Si₃N₄ was found to occur in the presence of oxygen-containing dopants. The type of dopant was also found to affect the morphology of product particles.      

Some New Perspectives on Oxidation of Silicon Carbide and Silicon Nitride

This study provides new perspectives on why the oxidation rates of silicon carbide and silicon nitride are lower than those of silicon and on the conditions under which gas bubbles can form on them. The effects on oxidation of various rate-limiting steps are evaluated by considering the partial pressure gradients of various species, such as O₂, CO, and N₂. Also calculated are the parabolic rate constants for the situations when the rates are controlled by oxygen and/or carbon monoxide (or nitrogen) diffusion. These considerations indicate that the oxidation of silicon carbide and silicon nitride should be mixed controlled, influenced both by an interface reaction and diffusion.     

Nitridation behavior of silicon powder compacts of various thicknesses with Y2O3 and MgO as sintering additives

The effects of the nitriding temperature (1300 and 1350°C), holding time (0‐4 hours), and thickness of Si powder compacts on the nitridation behavior of silicon were investigated by examining the nitridation rates, analyzing phase compositions, and observing the microstructures of nitrided compacts. Si powder compacts doped with Y₂O₃ and MgO as sintering additives were prepared with thicknesses of 3, 6, and 9 mm. The phases of nitrided compacts were transformed from Si to α‐Si₃N₄ and β‐Si₃N₄ with an increase in the nitriding temperature and holding time. The degree of nitridation increased with the nitriding temperature and holding time. The β/(α+β) ratio increased with the nitriding temperature and holding time, and with a decrease in the thickness of the Si powder compacts. However, all compacts exhibited the same tendency for a higher β/(α+β) ratio at the compact surface than in the bulk of the compact. The variation in the β/(α+β) ratio for each compact decreased with an increase in the nitriding temperature and holding time.     

有机聚硅氧烷在医药中的应用进展

总结了硅橡胶、硅油、硅树脂在医药中的应用,并介绍了硅烷化技术在药物合成、蛋白质分析检测等生物工程方面的应用和一些新型抗肿瘤、抗癌的含硅药物及多孔硅膜的药物缓释体系的发展。     

Oxidation of Silicon and Silicon Carbide in Ozone-Containing Atmospheres at 973 K

The oxidation behavior of a silicon wafer, chemically vapor-deposited SiC, and single-crystal SiC was investigated in an oxygen—2%–7% ozone gas mixture at 973 K. The thickness of the oxide film that formed during oxidation was measured by ellipsometry. The oxidation rates in the ozone-containing atmosphere were much higher than those in a pure oxygen atmosphere. The parabolic oxidation kinetics were observed for both silicon and SiC. The parabolic rate constants varied linearly with the ozone-gas partial pressure. Inward diffusion of atomic oxygen formed by the dissociation of ozone gas through the SiO₂ film apparently was the rate-controlling process.     

硅整流改为可控硅整流技术总结

介绍了硅整流改为可控制硅整流的技术改造过程及应注意的问题，改造后的整流技术具有操作简单，提高经济效益的特点。     

Mössbauer Study of the Influence of Fe-Si-N Liquid in the Synthesis of β-Si3N4 from Silica

Mössbauer spectra of the products obtained by carbothermal reduction and distribution of silica in the presence of iron in the temperatures range 1200^o to 1540^o were studied. The preponderance of β- Si₃N₄ over the α form at a higher reaction temperature were assumed to be related to the formation of an Fe-Si-N liquid. The liquid did not alter its composition with the variation of reduction-temprature, Iron had no effect on the reaction mechanism below 1300^oC.     

硅粉技术的选优

介绍了目前有机硅单体合成领域用工业硅粉主要的3种制粉技术,基于生产实践经验对比了不同制粉方法的技术经济指标和产品性能.     

化妆品中用硅粉、硅悬浮液的最新技术(日)

硅是化妆品生产不可缺少的原料之一。介绍了硅粉、硅悬浮液用于化妆品生产的最新技术, 特别是毛发调理产品中的应用。硅粉作为固体原料有望成为化妆品中新产品的生产原料。     

Improved Resistance to Damage of Silicon Carbide-Whisker-Reinforced Silicon Nitride-Matrix Composites by Whisker-Oriented Alignment

The effects of whisker-oriented alignment on resistance to damage of SiC( w )/Si₃N₄ composites have been investigated by the Vickers indentation method and R -curve behavior. It is shown that increasing the degree of whisker-oriented alignment decreases the lengths of Vickers impressions and indentation cracks. The results exhibit rising R -curve behaviors for the SiC( w )/Si₃N₄ composites with different degree of whisker-oriented alignment. Moreover, the initial crack length c _i, the threshold of crack growth resistance K _i, and the upper bound of crack growth resistance K _∞ change regularly with increasing degree of whisker-oriented alignment. All results suggest that the whisker-oriented alignment improves the resistance to damage of the composites, resulting in a more reliable and usable composite.