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1.
M. Carmody A. Yulius D. Edwall D. Lee E. Piquette R. Jacobs D. Benson A. Stoltz J. Markunas A. Almeida J. Arias 《Journal of Electronic Materials》2012,41(10):2719-2724
Alternate substrates for molecular beam epitaxy growth of HgCdTe including Si, Ge, and GaAs have been under development for more than a decade. MBE growth of HgCdTe on GaAs substrates was pioneered by Teledyne Imaging Sensors (TIS) in the 1980s. However, recent improvements in the layer crystal quality including improvements in both the CdTe buffer layer and the HgCdTe layer growth have resulted in GaAs emerging as a strong candidate for replacement of bulk CdZnTe substrates for certain infrared imaging applications. In this paper the current state of the art in CdTe and HgCdTe MBE growth on (211)B GaAs and (211) Si at TIS is reviewed. Recent improvements in the CdTe buffer layer quality (double crystal rocking curve full-width at half-maximum?≈?30?arcsec) with HgCdTe dislocation densities of ≤106?cm?2 are discussed and comparisons are made with historical HgCdTe on bulk CdZnTe and alternate substrate data at TIS. Material properties including the HgCdTe majority carrier mobility and dislocation density are presented as a function of the CdTe buffer layer quality. 相似文献
2.
Heteroepitaxy of HgCdTe(112) infrared detector structures on Si(112) substrates by molecular-beam epitaxy 总被引:4,自引:0,他引:4
T. J. De Lyon R. D. Rajavel J. E. Jensen O. K. Wu S. M. Johnson C. A. Cockrum G. M. Venzor 《Journal of Electronic Materials》1996,25(8):1341-1346
High-quality, single-crystal epitaxial films of CdTe(112)B and HgCdTe(112)B have been grown directly on Si(112) substrates
without the need for GaAs interfacial layers. The CdTe and HgCdTe films have been characterized with optical microscopy, x-ray
diffraction, wet chemical defect etching, and secondary ion mass spectrometry. HgCdTe/Si infrared detectors have also been
fabricated and tested. The CdTe(112)B films are highly specular, twin-free, and have x-ray rocking curves as narrow as 72
arc-sec and near-surface etch pit density (EPD) of 2 × 106 cm−2 for 8 μm thick films. HgCdTe(112)B films deposited on Si substrates have x-ray rocking curve FWHM as low as 76 arc-sec and
EPD of 3-22 × 106 cm−2. These MBE-grown epitaxial structures have been used to fabricate the first high-performance HgCdTe IR detectors grown directly
on Si without use of an intermediate GaAs buffer layer. HgCdTe/Si infrared detectors have been fabricated with 40% quantum
efficiency and R0A = 1.64 × 104 Ωm2 (0 FOV) for devices with 7.8 μm cutoff wavelength at 78Kto demonstrate the capability of MBE for growth of large-area HgCdTe
arrays on Si. 相似文献
3.
Molecular beam epitaxy grown long wavelength infrared HgCdTe on Si detector performance 总被引:1,自引:0,他引:1
M. Carmody J. G. Pasko D. Edwall R. Bailey J. Arias S. Cabelli J. Bajaj L. A. Almeida J. H. Dinan M. Groenert A. J. Stoltz Y. Chen G. Brill N. K. Dhar 《Journal of Electronic Materials》2005,34(6):832-838
The use of silicon as a substrate alternative to bulk CdZnTe for epitaxial growth of HgCdTe for infrared (IR) detector applications
is attractive because of potential cost savings as a result of the large available sizes and the relatively low cost of silicon
substrates. However, the potential benefits of silicon as a substrate have been difficult to realize because of the technical
challenges of growing low defect density HgCdTe on silicon where the lattice mismatch is ∼19%. This is especially true for
LWIR HgCdTe detectors where the performance can be limited by the high (∼5×106 cm−2) dislocation density typically found in HgCdTe grown on silicon. We have fabricated a series of long wavelength infrared
(LWIR) HgCdTe diodes and several LWIR focal plane arrays (FPAs) with HgCdTe grown on silicon substrates using MBE grown CdTe
and CdSeTe buffer layers. The detector arrays were fabricated using Rockwell Scientific’s planar diode architecture. The diode
and FPA and results at 78 K will be discussed in terms of the high dislocation density (∼5×106 cm2) typically measured when HgCdTe is grown on silicon substrates. 相似文献
4.
Jae Jin Kim R. N. Jacobs L. A. Almeida M. Jaime-Vasquez C. Nozaki David J. Smith 《Journal of Electronic Materials》2013,42(11):3142-3147
A microstructural study of HgCdTe/CdTe/GaAs(211)B and CdTe/GaAs(211)B heterostructures grown using molecular beam epitaxy (MBE) was carried out using transmission electron microscopy and small-probe microanalysis. High-quality MBE-grown CdTe on GaAs(211)B substrates was demonstrated to be a viable composite substrate platform for HgCdTe growth. In addition, analysis of interfacial misfit dislocations and residual strain showed that the CdTe/GaAs interface was fully relaxed except in localized regions where GaAs surface polishing had caused small pits. In the case of HgCdTe/CdTe/GaAs(211)B, the use of thin HgTe buffer layers between HgCdTe and CdTe for improving the HgCdTe crystal quality was also investigated. 相似文献
5.
M. Carmody J. G. Pasko D. Edwall M. Daraselia L. A. Almeida J. Molstad J. H. Dinan J. K. Markunas Y. Chen G. Brill N. K. Dhar 《Journal of Electronic Materials》2004,33(6):531-537
In the past several years, we have made significant progress in the growth of CdTe buffer layers on Si wafers using molecular
beam epitaxy (MBE) as well as the growth of HgCdTe onto this substrate as an alternative to the growth of HgCdTe on bulk CdZnTe
wafers. These developments have focused primarily on mid-wavelength infrared (MWIR) HgCdTe and have led to successful demonstrations
of high-performance 1024×1024 focal plane arrays (FPAs) using Rockwell Scientific’s double-layer planar heterostructure (DLPH)
architecture. We are currently attempting to extend the HgCdTe-on-Si technology to the long wavelength infrared (LWIR) and
very long wavelength infrared (VLWIR) regimes. This is made difficult because the large lattice-parameter mismatch between
Si and CdTe/HgCdTe results in a high density of threading dislocations (typically, >5E6 cm−2), and these dislocations act as conductive pathways for tunneling currents that reduce the RoA and increase the dark current of the diodes. To assess the current state of the LWIR art, we fabricated a set of test diodes
from LWIR HgCdTe grown on Si. Silicon wafers with either CdTe or CdSeTe buffer layers were used. Test results at both 78 K
and 40 K are presented and discussed in terms of threading dislocation density. Diode characteristics are compared with LWIR
HgCdTe grown on bulk CdZnTe. 相似文献
6.
V. Natarajan N. R. Taskar I. B. Bhat S. K. Ghandhi 《Journal of Electronic Materials》1988,17(6):479-483
The organometallic vapor phase epitaxy of HgCdTe onto (100)2°-(110) GaAs substrates is described in this paper. A buffer layer
of CdTe has been grown prior to the growth of HgCdTe, to take up the large lattice mismatch with the GaAs. Considerations
for the thickness of this buffer layer are outlined, and it is shown by quantitative Secondary Ion Mass Spectroscopy that
there is negligible diffusion of gallium from the GaAs substrate for the growth conditions described. Hall effect measurements
give mobilities comparable to those reported for bulk grown crystals. An extrinsicn-type carrier concentration of 2 × 1016/cm3 is obtained, and is mainly due to residual impurities in the starting chemicals. The alloy composition has been determined
at 298 K by Fourier transform infrared transmission (FTIR) spectrometry; this is found to be extremely uniform over a 15 ×
7 mm area, as evidenced by an overlapping of FTIR plots taken over this area. HgCdTe layers have been grown on buffer layers
varying in thickness from 0.1 to 1.9μm. It is found that a buffer thickness of about 1.9μm or larger is required to obtain high quality HgCdTe, both in terms of the electrical characteristics (mobility and carrier
concentration) and the infrared transmission curves (peak transmission). 相似文献
7.
Direct growth of CdZnTe/Si substrates for large-area HgCdTe infrared focal plane arrays 总被引:1,自引:0,他引:1
S. M. Johnson T. J. de Lyon C. A. Cockrum W. J. Hamilton T. Tung F. I. Gesswein B. A. Baumgratz L. M. Ruzicka O. K. Wu J. A. Roth 《Journal of Electronic Materials》1995,24(5):467-473
Direct epitaxial growth of high-quality 100lCdZnTe on 3 inch diameter vicinal {100}Si substrates has been achieved using molecular
beam epitaxy (MBE); a ZnTe initial layer was used to maintain the {100} Si substrate orientation. The properties of these
substrates and associated HgCdTe layers grown by liquid phase epitaxy (LPE) and subsequently processed long wavelength infrared
(LWIR) detectors were compared directly with our related efforts using CdZnTe/ GaAs/Si substrates grown by metalorganic chemical
vapor deposition (MOCVD). The MBE-grown CdZnTe layers are highly specular and have both excellent thickness and compositional
uniformity. The x-ray full-width at half-maximum (FWHM) of the MBE-grown CdZnTe/Si increases with composition, which is a
characteristic of CdZnTe grown by vapor phase epitaxy, and is essentially equivalent to our results obtained on CdZnTe/GaAs/Si.
As we have previously observed, the x-ray FWHM of LPE-grown HgCdTe decreases, particularly for CdZnTe compositions near the
lattice matching condition to HgCdTe; so far the best value we have achieved is 54 arc-s. Using these MBE-grown substrates,
we have fabricated the first high-performance LWIR HgCdTe detectors and 256 x 256 arrays using substrates consisting of CdZnTe
grown directly on Si without the use of an intermediate GaAs buffer layer. We find first that there is no significant difference
between arrays fabricated on either CdZnTe/Si or CdZnTe/GaAs/Si and second that the results on these Si-based substrates are
comparable with results on bulk CdZnTe substrates at 78K. Further improvements in detector performance on Si-based substrates
require a decrease in the dislocation density. 相似文献
8.
分子束外延碲镉汞技术是制备第三代红外焦平面探测器的重要手段,基于异质衬底的碲镉汞材料具有尺寸大、成本低、与常规半导体设备兼容等优点,是目前低成本高性能红外探测器发展中的研究重点。对异质衬底上碲镉汞薄膜位错密度随厚度的变化规律进行了建模计算,结果显示ρ~1/h 模型与实验结果吻合度好,异质衬底上原生碲镉汞薄膜受位错反应半径制约,其位错密度无法降低至 5×106cm-2以下,难以满足长波、甚长波器件的应用需求。为了有效降低异质外延的碲镉汞材料位错密度,近年来出现了循环退火、位错阻挡和台面位错吸除等位错抑制技术,本文介绍了各技术的原理及进展,分析了后续发展趋势及重点。循环退火和位错阻挡技术突破难度大,发展潜力小,难以将碲镉汞位错密度控制在 5×105cm-2以内。台面位错吸除技术目前已经显示出了巨大的发展潜力和价值,后续与芯片工艺融合后,有望大幅促进低成本长波、中长波、甚长波器件的发展。 相似文献
9.
J. K. Markunas R. N. Jacobs P. J. Smith J. Pellegrino 《Journal of Electronic Materials》2011,40(8):1809-1814
Reduction of threading dislocation density is critical for improving the performance of HgCdTe detectors on lattice-mismatched
alternative substrates such as Si. CdTe buffer layers grown by molecular beam epitaxy (MBE), with thicknesses on the order
of 8 μm to 12 μm, have helped reduce dislocation densities in HgCdTe layers. In this study, the reduction of threading dislocation densities
in CdTe buffer layers grown on locally thinned Si substrates was examined. A novel Si back-thinning technique was developed
that maintained an epiready front surface and achieved Si thicknesses as low as 1.9 μm. Threading dislocation densities, acquired by defect decoration techniques, were reduced by as much as 60% for CdTe buffer
layers grown on these thinned regions when compared with unthinned regions. However, this reduction is inconsistent with prior
notions that threading dislocation propagation is dominated by image forces. Instead, the thickness gradient of thinned Si
may play a larger role. 相似文献
10.
E. P. G. Smith G. M. Venzor M. D. Newton M. V. Liguori J. K. Gleason R. E. Bornfreund S. M. Johnson J. D. Benson A. J. Stoltz J. B. Varesi J. H. Dinan W. A. Radford 《Journal of Electronic Materials》2005,34(6):746-753
Inductively coupled plasma (ICP) using hydrogen-based gas chemistry has been developed to meet requirements for deep HgCdTe
mesa etching and shallow CdTe passivation etching in large format HgCdTe infrared focal plane array (FPA) fabrication. Large
format 2048×2048, 20-μm unit-cell short wavelength infrared (SWIR) and 2560×512, 25-μm unit-cell midwavelength infrared (MWIR)
double-layer heterojunction (DLHJ) p-on-n HgCdTe FPAs fabricated using ICP processing exhibit >99% pixel operability. The
HgCdTe FPAs are grown by molecular beam epitaxy (MBE) on Si substrates with suitable buffer layers. Midwavelength infrared
detectors fabricated from 4-in. MBE-grown HgCdTe/Si substrates using ICP for mesa delineation and CdTe passivation etching
demonstrate measured spectral characteristics, RoA product, and quantum efficiency comparable to detectors fabricated using
wet chemical processes. Mechanical samples prepared to examine physical characteristics of ICP reveal plasma with high energy
and low ion angle distribution, which is necessary for fine definition, high-aspect ratio mesa etching with accurate replication
of photolithographic mask dimensions. 相似文献
11.
12.
R. Bommena T. Seldrum L. Samain R. Sporken S. Sivananthan S.R.J. Brueck 《Journal of Electronic Materials》2008,37(9):1255-1260
Silicon-based substrates for the epitaxy of HgCdTe are an attractive low-cost choice for monolithic integration of infrared detectors with mature Si technology and high yield. However, progress in heteroepitaxy of CdTe/Si (for subsequent growth of HgCdTe) is limited by the high lattice and thermal mismatch, which creates strain at the heterointerface that results in a high density of dislocations. Previously we have reported on theoretical modeling of strain partitioning between CdTe and Si on nanopatterned silicon on insulator (SOI) substrates. In this paper, we present an experimental study of CdTe epitaxy on nanopatterned (SOI). SOI (100) substrates were patterned with interferometric lithography and reactive ion etching to form a two-dimensional array of silicon pillars with ~250 nm diameter and 1 μm pitch. MBE was used to grow CdTe selectively on the silicon nanopillars. Selective growth of CdTe was confirmed by scanning electron microscopy (SEM), atomic force microscopy (AFM), and X-ray photoelectron spectroscopy (XPS). Coalescence of CdTe on the silicon nanoislands has been observed from the SEM characterization. Selective growth was achieved with a two-step growth process involving desorption of the nucleation layer followed by regrowth of CdTe at a rate of 0.2 Å s?1. Strain measurements by Raman spectroscopy show a comparable Raman shift (2.7 ± 2 cm?1 from the bulk value of 170 cm?1) in CdTe grown on nanopatterned SOI and planar silicon (Raman shift of 4.4 ± 2 cm?1), indicating similar strain on the nanopatterned substrates. 相似文献
13.
14.
15.
M. F. Vilela K. A. Anselm N. Sooriar J. L. Johnson C. H. Lin G. J. Brown K. Mahalingam A. Saxler F. Szmulowicz 《Journal of Electronic Materials》2001,30(7):798-801
The results of wafer fusion between GaAs and InP followed by transfer of an InGaAs film from the InP to GaAs substrate are
presented in this paper. This technique of film transfer allowed the subsequent growth of epitaxial materials with approximately
7% lattice mismatch. Type-II InAs/GaInSb superlattices photodetectors of different designs have been grown by molecular beam
epitaxy (MBE) on the alternative InGaAs/GaAs substrate and on standard GaSb substrates. Comparison between photodetectors
grown on the two different substrates with nearly identical superlattice periods showed a shift in the cut-off wavelength.
The superlattices grown on the alternative substrates were found to have uniform layers, with broader x-ray linewidths than
superlattices grown on GaSb substrates. 相似文献
16.
Heteroepitaxy of HgCdTe (211)B on Ge substrates by molecular beam epitaxy for infrared detectors 总被引:3,自引:0,他引:3
J. P. Zanatta P. Ferret G. Theret A. Million M. Wolny J. P. Chamonal G. Destefanis 《Journal of Electronic Materials》1998,27(6):542-545
Epitaxial growth of (211)B CdTe/HgCdTe has been achieved on two inch germanium (Ge) by molecular beam epitaxy (MBE). Germanium
was chosen as an alternative substrate to circumvent the weaknesses of CdZnTe wafers. The ease of surface preparation makes
Ge an attractive candidate among many other alternative substrates. Best MBE CdTe growth results were obtained on (211) Ge
surfaces which were exposed to arsenic and zinc fluxes prior to the MBE growth. This surface preparation enabled CdTe growth
with B-face crystallographic polarity necessary for the HgCdTe growth. This process was reproducible, and produced a smooth
and mirror-like surface morphology. The best value of the {422} x-ray double diffraction full width at half maximum measured
from the HgCdTe layer was 68 arc-s. We present the 486 point maps of FWHM statistical values obtained from CdTe/Ge and HgCdTe/CdTe/Ge.
High resolution microscopy electron transmission and secondary ion mass spectroscopy characterization results are also presented
in this paper. High-performance middle wavelength infrared HgCdTe 32-element photodiode linear arrays, using the standard
LETI/LIR planar n-on-p ion implanted technology, were fabricated on CdTe/Ge substrates. At 78K, photodiodes exhibited very
high R0A figure of merit higher than 106 Ωcm−2 for a cutoff wavelength of 4.8 μm. Excess low frequency noise was not observed below 150K. 相似文献
17.
MBE growth of HgCdTe on silicon substrates for large-area infrared focal plane arrays: A review of recent progress 总被引:3,自引:0,他引:3
T. J. de Lyon J. E. Jensen M. D. Gorwitz C. A. Cockrum S. M. Johnson G. M. Venzor 《Journal of Electronic Materials》1999,28(6):705-711
We review the rapid progress that has been made during the past three years in the heteroepitaxial growth of HgCdTe infrared
detector device structures on Si substrates by molecular-beam epitaxy. The evolution of this technology has enabled the fabrication
of high performance, large-area HgCdTe infrared focal-plane arrays on Si substrates. A key element of this heteroepitaxial
approach has been development of high quality CdTe buffer layers deposited on Si(112) substrates. We review the solutions
developed by several groups to address the difficulties associated with the CdTe/Si(112) heteroepitaxial system, including
control of crystallographic orientation and minimization of defects such as twins and threading dislocations. The material
quality of HgCdTe/Si and the performance of HgCdTe detector structures grown on CdTe/Si(112) composite substrates is reviewed.
Finally, we discuss some of the challenges related to composition uniformity and defect generation encountered with scaling
the MBE growth process for HgCdTe to large-area Si substrates. 相似文献
18.
The development of HgCdTe detectors requires high sensitivity, small pixel size, low defect density, long-term thermal-cycling reliability, and large-area substrates. CdTe bulk substrates were initially used for epitaxial growth of HgCdTe films. However, CdTe has a lattice mismatch with long-wavelength infrared (LWIR) and middle-wavelength infrared (MWIR) HgCdTe that results in detrimental dislocation densities above mid-106 cm?2. This work explores the use of CdTe/Si as a possible substrate for HgCdTe detectors. Although there is a 19% lattice mismatch between CdTe and Si, the nanoheteroepitaxy (NHE) technique makes it possible to grow CdTe on Si substrates with fewer defects at the CdTe/Si interface. In this work, Si(100) was patterned using photolithography and dry etching to create 500-nm to 1-μm pillars. CdTe was selectively deposited on the pillar surfaces using the close-spaced sublimation (CSS) technique. Scanning electron microscopy (SEM) was used to characterize the CdTe selective growth and grain morphology, and transmission electron microscopy (TEM) was used to analyze the structure and quality of the grains. CdTe selectivity was achieved for most of the substrate and source temperatures used in this study. The ability to selectively deposit CdTe on patterned Si(100) substrates without the use of a mask or seed layer has not been observed before using the CSS technique. The results from this study confirm that CSS has the potential to be an effective and low-cost technique for selective nanoheteroepitaxial growth of CdTe films on Si(100) substrates for infrared detector applications. 相似文献
19.
研究了利用GaAs作为衬底的HgCdTe MBE薄膜的表面缺陷,发现其中一类缺陷与Hg源中杂质有关。采用SEM对这类缺陷进行正面和横截面的观察,并采用EDX对其正面和横截面进行成分分析。并设计了两个实验:其一,在CdTe/GaAs衬底上,低温下用Hg源照射20min,再在其上继续高温生长CdTe;其二,在CdTe/GaAs衬底上,一直用Hg源照射下高温生长CdTe。两个实验后CdTe表面都出现与HgCdTe表面相比在形状和分布上类似的表面缺陷,采用光学显微镜和SEM对CdTe表面缺陷进行了观察,通过CdTe表面缺陷和HgCdTe表面缺陷的比较,我们证实了这类表面缺陷的成核起源于Hg源中杂质。 相似文献
20.
Li He Xiangliang Fu Qingzhu Wei Weiqiang Wang Lu Chen Yan Wu Xiaoning Hu Jianrong Yang Qinyao Zhang Ruijun Ding Xiaoshuang Chen Wei Lu 《Journal of Electronic Materials》2008,37(9):1189-1199
Results of first-principles calculations and experiments focusing on molecular beam epitaxy (MBE) growth of HgCdTe on the
alternative substrates of GaAs and Si are described. The As passivation on (2 × 1) reconstructed (211) Si and its effects
on the surface polarity of ZnTe or CdTe were clarified by examining the bonding configurations of As. The quality of HgCdTe
grown on Si was confirmed to be similar to that grown on GaAs. Typical surface defects in HgCdTe and CdTe were classified.
Good results for uniformities of full width at half maximum (FWHM) values of x-ray rocking curves, surface defects, and x values of Hg1−x
Cd
x
Te were obtained by refining the demanding parameters and possible tradeoffs. The sticking coefficient of As4 for MBE HgCdTe was determined. The effects of Hg-assisted annealing for As activation were investigated experimentally and
theoretically by examining the difference of the formation energy of AsHg and AsTe. Results of focal-plane arrays (FPAs) fabricated with HgCdTe grown on Si and on GaAs are discussed. 相似文献