A red tandem organic light-emitting diode based on organic photovoltaic-type charge generation layer

In this paper, a significant enhancement in current efficiency of a red tandem organic light-emitting diode (OLED), which is based on an organic photovoltaic-type charge generation layer (CGL) of fullerene carbon 60/copper (Ⅱ) phthalocyanine, is introduced. The CGL can absorb a part of photons, radiated from emission zone, then form excitons, which are dissociated into free charges. It induces in lower driven voltage and better efficiency of tandem OLED. Compared with single emitter-unit OLED and tandem OLED with bulk heterojunction CGL, the luminous efficiency boosts remarkably with increasing current density and shows rather slower roll-off. Our results demonstrate that the organic photovoltaic heterojunction, consists of two matched n- and p-type organic semiconductors, is a promising CGL for tandem OLEDs with high efficiency.     

Parallel Addressing Scheme for Voltage-Programmed Active-Matrix OLED Displays

This paper presents a novel parallel addressing scheme for voltage-programmed active-matrix organic light-emitting diode (OLED) displays which provides high precision recovery of the threshold voltage shift. As a result, the uniformity over the panel is significantly improved. In addition, a new pixel circuit is presented that is capable of providing a predictably higher current as the pixel ages, so as to compensate for the OLED luminance degradation     

二维亚波长结构对OLED光抽出特性的FDTD模拟研究

有机发光二极管(OLED)发光效率很大程度上受到器件中高折射率材料(ITO/有机物)对导波光能量的制约.通过使用时域有限差分(FDTD)方法,对在OLED中的氧化铟与氧化锡复合透明阳极ITO结构上覆盖二维正方以及三角排列SiNx圆柱光子晶体厚膜(PCS)的结构进行了数值模拟,并对这种全新结构对于提高束缚于高折射率材料中的光的抽取效率的效果进行了分析,并给出了最优化的几何参数.     

Enhancement of hole injection with an ultra-thin Ag2O modified anode in organic light-emitting diodes

The interface between the organic layer and the Indium Tin Oxide (ITO) layer of an organic light-emitting diode (OLED) is crucial to the performance of the device. An ultra-thin Ag₂O film, used as an anode modification layer, has been employed on ITO surface through the UV-ozone treatment of Ag films. The insertion of this thin film with higher work function enhances the hole injection in the organic light-emitting diode and improves the performance of the devices effectively. The maximum electroluminescence (EL) efficiency of the device with the Ag₂O film is 4.95 cd/A, it is about 60% higher than that of the device without it.     

Design of white tandem organic light-emitting diodes for full-color microdisplay with high current efficiency and high color gamut

Microdisplays based on organic light-emitting diodes (OLEDs) have a small form factor, and this can be a great advantage when applied to augmented reality and virtual reality devices. In addition, a high-resolution microdisplay of 3000 ppi or more can be achieved when applying a white OLED structure and a color filter. However, low luminance is the weakness of an OLED-based microdisplay as compared with other microdisplay technologies. By applying a tandem structure consisting of two separate emission layers, the efficiency of the OLED device is increased, and higher luminance can be achieved. The efficiency and white spectrum of the OLED device are affected by the position of the emitting layer in the tandem structure and calculated via optical simulation. Each white OLED device with optimized efficiency is fabricated according to the position of the emitting layer, and red, green, and blue spectrum and efficiency are confirmed after passing through color filters. The optimized white OLED device with color filters reaches 97.8% of the National Television Standards Committee standard.     

易于集成的有机薄膜场效应晶体管的制备

用有机半导体并五苯作为有源层,聚四氟乙烯作为绝缘层,采用全蒸镀方式在真空室一次性制备了正装结构的有机薄膜场效应晶体管(OTFT)。薄的有机绝缘层使得器件工作在低电压下,有机薄膜场效应晶体管易于与显示像素(有机发光二极管(OLED))集成在同一个透明的刚性或者柔性衬底上。研究了有机薄膜场效应晶体管的源漏接触电阻和沟道电阻对器件性能的影响,结果表明接触电阻是影响器件性能的主要因素。在透明的玻璃衬底上实现了有机薄膜场效应晶体管对同一衬底上100μm×200μm红色有机发光二极管的驱动。     

OLED面板的彩色显示驱动技术研究

OLED(有机发光二极管)彩色化最常用的工艺方法之一是RGB象素独立发光法。在详细分析了各种材料的亮度稳定性和使用寿命后,得出OLED的白光材料具有更高的功率效率和稳定性,由RGB三色合成白光OLED会造成功率的浪费。据此提出了一种四色法:即发光材料除了红、绿、蓝(RGB)三色发光材料外,还有白色发光材料,由白OLED材料直接产生白光。文章首先介绍了这种方法的工作原理,然后对这种彩色OLED实现方式的驱动电路进行了详细的探讨。在保证原RGB三色显示的色彩和寿命的前提下,通过对每个RGB的电流进行换算,用RGBW四色实现了OLED的彩色显示。结果表明这种显示法在降低总的驱动功率的同时,还可对高分辨率面板的色彩平衡变化加以控制。     

Hole-enhanced electron injection from ZnO in inverted polymer light-emitting diodes

Metal oxides as ZnO provide an interesting alternative for conventional low work function metals as electron injection layer in organic light-emitting diodes (OLEDs). However, for most state-of-the-art OLED materials the high work function of ZnO leads to a large injection barrier for electrons. As a result the electron current in the OLED is largely limited by the contact, leading to a strong reduction of the conversion efficiency. Here we demonstrate that by depositing an amorphous ZnO layer as cathode in an inverted polymer LED, the electron injection can be strongly enhanced by electrical conditioning. For suited polymers comparable conversion efficiencies of the conventional and inverted PLEDs can be achieved.     

Research on the impact of spin coating silver nano clusters on the performance of OLED devices

To achieve uniform distribution of silver nano clusters (SNCs) on substrate and reveal its effect on the performance of organic light-emitting diode (OLED), the SNCs incorporated OLED was fabricated and SNCs were coated by multi-step spin coating. Compared with the device without SNCs film, the brightness and current efficiency of the OLED devices with SNCs film were highly raised. The enhancement is attributed to SNCs induced local surface plasmon (LSP) oscillation, which can increase the radiative rate of excitons on Alq₃ molecules.     

超微OLED的制备及其光电特性的研究

为了实现高亮度有机电致发光器件(OLED)及其尺寸的微型化,采用接触式光刻技术,通过真空热蒸镀制备了具有不同掩膜版结构的OLED。器件的结构为玻璃衬底/ITO/LiF/空穴传输层(HTL,NPD)/发光层(EML,0.5-0.6vol%Rubrene:Alq3)/电子传输层(ETL,Alq3)/阴极,其中LiF作为绝缘层。分别制得发光面积为45μm×2mm的微细器件和直径为44μm的微小器件。实验研究了其光电特性,结果表明,4.5μm×2.0mm微细器件的最大电流密度为7A/cm2,为44μm微小器件的最大电流密度为40A/cm2。     

High efficiency organic light-emitting diodes using CuOx/ Cu dual buffer layers

A tunable dual-wavelength fiber Bragg grating(FBG)laser based on a distributed feedback(DFB)laser injection is proposed and experimentally demonstrated.The wavelength spacing can be tuned by adjusting the operation temperature of the DFB laser.When the DFB works at 25℃,a dual-wavelength simultaneous oscillation at 1 549.67 nm and1 553.44 nm with wavelength spacing of 3.77 nm is achieved.Our experimental results demonstrate the new concept of dual-wavelength lasing with a DFB laser injection and the technical feasibility.     

利用色彩转换膜实现白色有机电致发光研究

利用蓝色有机发光二极管(BOLED)激发色彩转换膜的方法,制备了一种新型的白色有机电致发光器件(WOLED)。BOLED的发光层采用CBP主体掺杂高效蓝色荧光染料N-BDAVBi来制备;色彩转换膜是将橙红色荧光颜料VQ-D24均匀分散到A、B环氧树脂中涂敷、固化而成。通过调整与分析转换膜的厚度和荧光颜料的掺杂比例来优化白光器件的发光光谱,获得了色稳定性较高的WOLED。当驱动电压由7V升至14V时,WOLED的色坐标(CIE)仅在(0.33,0.32)和(0.34,0.28)间变化,器件最高电流效率约为7.3cd/A(4.35mA/cm2),最高亮度为12000cd/m2(14V)。     

High-performance polycrystalline silicon thin-film transistor technology using low-temperature metal-induced unilateral crystallization

Low-temperature metal-induced unilaterally crystallized polycrystalline silicon thin-film transistors (TFTs) have been developed and characterized. These TFTs are better than their solid-phase crystallized counterparts in many process and device performance measures, such as shorter and simpler process flow, higher field-effect mobility, reduced leakage current, better immunity to early drain breakdown and much improved spatial uniformity of device parameters. They have been used to realize active matrices for liquid-crystal (LC) and organic light-emitting diode (OLED) flat-panel displays.     

A New Thin-Film Transistor Pixel Structure Suppressing the Leakage Current Effects on AMOLED

We propose a new pixel structure employing solid-phase crystallized silicon thin-film transistors which suppresses the leakage current effects on active-matrix organic light-emitting diode (AMOLED) displays. The pixel structure has been fabricated on a glass substrate employing the field-enhanced rapid thermal annealing technology. In the proposed pixel, the charge holding capability is considerably enhanced due to the capacitor located between two series-connected switch transistors. Our experimental results shows that the average variation range of the OLED current is suppressed less than 0.5% while the conventional one exceeded 4%.      

基于超薄发光层的有机发光二极管器件的研究

文章采用具有电子捕捉能力的橙红色磷光材料iridium(Ⅲ)bis(2-methyldibenzo-[f,h] quinoxaline) (acetylacetonate) (Ir(MDQ)2 (acac))作为超薄发光层应用于有机发光二极管中.通过对其厚度的优化,发现当发光层厚度为0.1 nm时,器件性能最好,最大电流效率达到了28.1 cd/A,明显优于采用掺杂发光层的器件.分析了发光材料的载流子捕捉作用对器件载流子平衡及器件电流效率的影响,发现超薄发光层结构几乎不改变器件的电学特性,不会进一步破坏器件载流子平衡,正因如此,大多数磷光材料都可以采用超薄发光层获得很高的效率.     

Enhanced light extraction efficiency using self-textured aluminum-doped zinc oxide in organic light-emitting diodes

We report enhanced light extraction efficiency in organic light-emitting diodes (OLEDs) fabricated on a self-textured aluminum-doped zinc oxide (AZO) anode layer. The self-textured AZO (ST-AZO) layer was fabricated by radio-frequency magnetron sputtering with a short period of thermal treatment without employing any additional etching processes. The green-emitting OLEDs exhibited a maximum power efficiency of 56.1 lm/W with 33.7% external quantum efficiency (EQE). We achieved a 3.24-fold enhancement in power efficiency and 2.55-fold increase in EQE for the OLED fabricated on the ST-AZO anode compared to that fabricated on the ITO anode. Furthermore, a low driving voltage and high current efficiency were obtained simultaneously for the OLED fabricated on the ST-AZO layer compared to that fabricated on the flat ITO anode layer. The ST-AZO layer acted as a random scattering layer that enabled the efficient extraction of generated light and served as the anode layer instead of the commonly used ITO. Our study showed that the ST-AZO layer fabricated by a simple sputtering process effectively improved the optical and electrical properties of the OLED.     

Luminance Uniformity of Large-Area OLEDs With an Auxiliary Metal Electrode

One of the key issues of a large-area organic light-emitting diode (OLED) for flat panel lighting applications is to enhance the uniformity of light emission. In this work, we have investigated the effect of an auxiliary metal (chrome) electrode in association with a device configuration on the luminance uniformity of a large-area (15$times$15 cm $^{2}$) white OLED. We demonstrate that the ratio between the effective horizontal resistance of anode (indium–tin–oxide (ITO) with the grid patterned metal electrode) and the vertical resistance of the OLED device is the critical factor to determine the luminance uniformity. Moreover, the luminance uniformity is shown to be a function of the current density and degraded with increasing current density. Namely, the OLED panel with the 200-$mu$ m-wide metal lines exhibits the luminance uniformity as high as 90% at 200 mA and 85% at 500 mA.      

Flexible AM OLED panel driven by bottom-contact OTFTs

Active matrix organic-light-emitting-diode (AM OLED) panels, driven by organic thin-film transistors (OTFT), have been successfully fabricated on a flexible plastic substrate. The pixel circuit consists of two bottom-contact pentacene OTFTs working as switching and driving transistors. The panel has 16 /spl times/ 16 pixels, each of which have an OLED using a phosphorescent material with an emission efficiency of 30 cd/A. A tantalum oxide (Ta/sub 2/O/sub 5/) film with a dielectric constant of 24, prepared by the anodization of Tantalum (Ta), was used as the gate insulator of the OTFTs. The passivation layer on the OTFTs was formed by a layer of silicon dioxide (SiO/sub 2/) and two layers of polyvinyl alcohol. Using OTFTs with a Ta/sub 2/O/sub 5/ gate insulator, the authors have realized a flexible active matrix OLED panel driven with a low voltage of -12 V.     

Pentacene TFT driven AM OLED displays

Pentacene organic thin-film transistors (TFTs)-driven active matrix organic light-emitting diode (OLED) displays has been investigated. This letter addresses several process issues unique to this type of display which are important in achieving bright and uniform displays. A bottom contact structure was used to fabricate the pentacene TFT backplane. Polyvinyl alcohol and parylene were used to isolate the pentacene active layer and passivate the backplane. The low processing temperature may allow the use of polymeric substrates and lower cost processing. Uniform TFT performance is achieved with reasonably good mobility and on/off ratio on the backplane. The initial OLED display performance is also presented.     

有机电致发光器件的磁电导效应研究进展

有机电致发光器件的磁电导效应,是指在恒定外加偏压下,对于不含有任何磁性材料功能层的有机电致发光器件,通过器件的电流发生变化的现象。由于器件对外磁场很敏感,通过给器件施加偏压,如果有外磁场的存在,器件的电流会有较显著地改变,通过与事先测定好的B-I 特性曲线对比,便能测定外加磁场的大小。因此利用这种效应可以制成磁场传感器等新型实用器件。有机电致发光器件中存在复杂的激发态及自旋弛豫过程,充分了解这些复杂的物理机制有助于开发更加高效的器件,而磁场会对以上物理过程产生作用,因此是一种很好的研究有机电致发光机制的工具。故这种研究具有较大的科学价值和社会应用前景。文中将从有机电致发光器件磁电导效应的研究背景、发展现状及存在问题等几个方面做详细的论述,并探讨磁电导效应产生的可能微观机制,并对未来的研究方向做进一步的展望。