一种1.2GHz～2.8GHz环形振荡器设计

压控振荡器(Voltage-Controlled Oscillator,VCO)是锁相环的关键模块之一,其性能极大地影响锁相环的性能。该文利用宏力(GSMC)0.18μm CMOS工艺设计了一种环形压控振荡器,该环形振荡器采样三级差分反相延时单元构成,频率范围为1.2GHz~2.8GHz。仿真结果表明,该环形振荡器的相位噪声为-94.6dBc/Hz@1MHz。     

一种宽带正交振荡器中子频带的精确设计方法

设计了一个应用于3.5 GHz频段锁相环的低电压宽带正交压控振荡器。通过对开关电容阵列进行功能划分和优化设计,从而精确地将锁相环的频道点逐一映射到了振荡器的子频带中,进而消除了频道切换时子频带的选择过程时间。该芯片采用0.18μm CMOS工艺实现,测试结果表明:振荡器的频率覆盖范围从3.04~3.58 GHz,并且所有的子频带均一一准确地覆盖了目标频道点;调谐增益从86 MHz/V变化至132 MHz/V,其平均值仅比设计值高6%;最高子频带的中心频率为3.538 GHz,其偏离载波1 MHz处的相位噪声为-121.6 dBc/Hz;在1.2 V电源电压下,振荡器核心的功耗约为14 mW。     

低功耗CMOS差分环形压控振荡器设计

提出了一个基于0.18μm标准CMOS工艺实现的四级差分环形压控振荡器.全差分环形压控振荡器采用带对称负载的差分延时单元.仿真结果表明,压控振荡器的频率范围在最坏情况为0.21～1.18GHz;偏离中心频率10MHz情况下,压控振荡器的相位噪声为-118.13dBc/Hz; 1.8V电源电压下,中心频率为600MHz时,压控振荡器的功耗仅有4.16mW;版图面积约为0.006mm2.可应用于锁相环和频率综合器设计中.     

CMOS低相位噪声压控振荡器的设计

基于65 nm CMOS标准工艺库,设计了一个工作频率在10 GHz的具有低相位噪声的CMOS电感电容型压控振荡器。该压控振荡器选用CMOS互补交叉耦合型电路结构,采用威尔逊型尾电流源负反馈技术来降低相位噪声。仿真结果表明,此压控振荡器工作频率覆盖范围为9.9~11.2 GHz,调谐范围为12.3%,中心频率为10.5 GHz,在频率偏移中心频率1 MHz下的相位噪声为-113.3 dBc/Hz,核心功耗为2.25 mW。     

一种用于锁相环的环形压控振荡器设计

本文基于SMIC 65nm标准CMOS工艺提出了一种用于锁相环的环形压控振荡器的电路设计。包括了环形振荡器和缓冲整形电路。该环形压控振荡器有四级延时单元,并且延时单元采用了Maneatis对称负载。该电路在Cadence Spectre进行了仿真。结果表明,在电源电压1.8V时,频率调整范围为0.277GHz～1.33GHz,具有良好的线性度。频偏为1MHz时的相位噪声为-92.46dBc/Hz@1MHz,有良好的噪声性能。缓冲整形电路将压控振荡器的输出波形转换为轨到轨电压,使占空比等于50%,并提高了驱动能力。振荡器的稳定频率分别为400/500MHz。     

一种低抖动、宽调节范围的带宽自适应CMOS锁相环

提出了一种低抖动、宽调节范围的带宽自适应CMOS锁相环.由于环路带宽可根据输入频率进行自动调节,电路性能可在整个工作频率范围内得到优化.为了进一步提高电路的抖动特性,在电荷泵电路中采用匹配技术,并在压控振荡器中应用电压-电压转换电路以减小压控振荡器的增益.芯片采用SMIC 0.35μm CMOS工艺加工.测试结果表明该锁相环电路可在200MHz～1.1GHz的输出频率范围内保持良好的抖动性能.     

锁相环电路中压控振荡器的分析与设计

本文设计了一个应用于高频锁相环（PLL）系统的负阻LC压控振荡器,在传统LC压控振荡器基础上,通过采用二次谐波滤波技术降低了振荡器的相位噪声,并完成了电路的仿真。仿真结果表明,该压控振荡器的振荡频率在1．9—2．1GHz,其频率调节范围达到200MHz,并且在距中心频率1MHz处其相位噪声为-148．825dBc／Hz...     

一种低抖动、宽调节范围的带宽自适应CMOS锁相环

提出了一种低抖动、宽调节范围的带宽自适应CMOS锁相环.由于环路带宽可根据输入频率进行自动调节,电路性能可在整个工作频率范围内得到优化.为了进一步提高电路的抖动特性,在电荷泵电路中采用匹配技术,并在压控振荡器中应用电压-电压转换电路以减小压控振荡器的增益.芯片采用SMIC 0.35μm CMOS工艺加工.测试结果表明该锁相环电路可在200MHz～1.1GHz的输出频率范围内保持良好的抖动性能.     

一种适用于2 4GHz ISM射频波段的全集成CMOS压控振荡器

提出了一种频率可调范围约 2 30MHz的全集成LC压控振荡器 (VCO) .该压控振荡器是用 6层金属、0 18μm的标准CMOS工艺制造完成 .采用MOS晶体管和电容组合来实现等效变容管 ,为降低芯片面积仅使用一个片上螺旋电感 ,并实施了低电压、低功耗的措施 .测试结果表明 ,该压控振荡器在电源电压为 1 8V的情况下功耗约为10mW ,在振荡器中心频率为 2 46GHz时的单边带相位噪声为 - 10 5 89dBc/Hz @6 0 0kHz .该压控振荡器可以应用于锁相环电路或频率综合器中.     

一种适用于2.4GHz ISM射频波段的全集成CMOS压控振荡器

提出了一种频率可调范围约230MHz的全集成LC压控振荡器(VCO).该压控振荡器是用6层金属、0.18μm的标准CMOS工艺制造完成.采用MOS晶体管和电容组合来实现等效变容管,为降低芯片面积仅使用一个片上螺旋电感,并实施了低电压、低功耗的措施.测试结果表明,该压控振荡器在电源电压为1.8V的情况下功耗约为10mW,在振荡器中心频率为2.46GHz时的单边带相位噪声为-105.89dBc/Hz@600kHz.该压控振荡器可以应用于锁相环电路或频率综合器中.     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.