Effect of synthesized BaTiO3 doping on the dielectric properties of ultra temperature-stable ceramics

The high performance X9R ceramics could be sintered at as low as 1,120?°C by doping 3?mol% synthesized BaTiO₃ (SB) additives into the BaTiO₃-based ceramics, with a dielectric constant greater than 2,200 at 25?°C and dielectric loss lower than 1.7?%. The effects of SB additives on the microstructure and dielectric properties of BaTiO₃-based ceramics were investigated. The dielectric constant of BaTiO₃-based ceramics doped with 3?mol% SB was increased due to the promotion of the densification of ceramics. With SB content up to 4.5?mol%, Ti⁴⁺’s polarization was depressed, which resulted in the decrease of augmented dielectric constant at 25?°C. The partial solid solution was formed between Pb(Ti, Sn)O₃ and BaTiO₃, and the substitutions of Pb at A-sites and Sn at B-sites were existed. The strengthen of Ti–O bonds and higher Curie point of Pb(Ti_0.55Sn_0.45)O₃ was helpful to increased the Curie point of the ceramics effectively. Doped with SB additives, the volume of ferroelectric core was increased, and the sharp peak intensity at Curie point was increased accordingly. Capacitance temperature characteristics was improved attributed to the mutual effects of SB and Pb(Ti_0.55Sn_0.45)O₃. The formation of core–shell structure was sensitive to the sintering temperature, so the dielectric properties of ceramics were highly depended on the sintering temperature.     

Effect of BaTiO<Subscript>3</Subscript> heat treatment on the microstructure and dielectric properties of BaTiO<Subscript>3</Subscript>-based ceramics

We have studied the effect of heat treatment of the starting BaTiO₃ powder on the dielectric properties and microstructure of X7R-type BaTiO₃-based ceramics. The results demonstrate that annealing of BaTiO₃ stabilizes the degree of tetragonality in the crystal lattice of the ceramics. Microstructural analysis shows that the annealing temperature has no effect on the average grain size of the ceramics. Increasing the BaTiO₃ annealing temperature increases the dielectric permittivity of the core phase and reduces the temperature coefficient of capacitance (TCC). We obtained an X7R-type BaTiO₃-based ceramic material (BaTiO₃ annealing temperature, 1150°C; firing temperature, 1160°C) with the following properties: ɛ_25°C = 2230, TCC = ±12% (−55 to 125°C), and tanδ_25°C = 0.013.     

Study on the microstructure and dielectric properties of X9R ceramics based on BaTiO3

This paper investigated the microstructure and dielectric properties of BaTiO₃-Pb(Sn, Ti)O₃ system ceramics. The Curie point of BaTiO₃ is 130 °C. When the temperature is higher than 130 °C, the dielectric constant of BaTiO₃ drops severely according to Curie-Weiss law. Pb(Ti, Sn)O₃(PTS) was selected to compensate the dielectric constant doping of BaTiO₃ since it has high Curie temperature (Tc) point that is about 296 °C. The Curie temperature (Tc) point of BaTiO₃ was broadened and shifted to higher temperature because of the doping of PTS, so the temperature coefficient of capacitance (TCC) curves of the ceramics based on BaTiO₃ was flattened. When 2 wt% Pb(Ti_0.55Sn_0.45)O₃ was added, the sample showed super dielectric properties that the dielectric constant was >1750 at 25 °C, dielectric loss was lower than 2.0% and TCC was <±10% from −55 °C to 200 °C. Therefore the materials satisfied EIA X9R specifications.     

Effects of Nb<Subscript>2</Subscript>O<Subscript>5</Subscript> doping on the microstructure and the dielectric temperature characteristics of barium titanate ceramics

In this work, the effects of Nb₂O₅ addition on the dielectric properties and phase formation of BaTiO₃ were investigated. A core–shell structure was formed for Nb-doped BaTiO₃ resulted from a low diffusivity of Nb⁵⁺ ions into BaTiO₃ when grain growth was inhibited. In the case of 0.3–4.8 mol% Nb₂O₅ additions, two dielectric constant peaks were observed. The Curie dielectric peak was determined by the ferroelectric-paraelectric transition of grain core, whereas the secondary broad peak at lower temperature was due to strong chemical inhomogeneity in Nb-doped BaTiO₃ ceramics. The dielectric constant peak at Curie temperature was markedly depressed with the addition of Nb₂O₅. On the other hand, the secondary dielectric constant peak was enhanced when sintered above 1280 °C for higher Nb₂O₅ concentrations (≥1.2 mol%). The Curie temperature was shifted to higher temperatures, whereas the transition temperature corresponding to the secondary peak moved to lower temperatures as increasing the amount of Nb₂O₅ more than 1.2 mol%. The decrease of this lower transition temperature was assumed to be closely related with the secondary phase formation when Nb concentration greater than 1.2 mol%. From XRD analyses, a large amount of secondary phases was observed when Nb₂O₅ amount exceeded 1.2 mol%. The coefficients of thermal expansion of Nb-doped BaTiO₃ were increased with increasing Nb₂O₅ contents, resulting in large internal stress between cores and shells. Therefore, the shift of Curie temperature to higher temperatures was attributed to internal stress resulting from the formation of a core–shell structure and a large amount of secondary phase grains.     

Microwave dielectric properties and its compatibility with silver electrode of LiNb<Subscript>0.6</Subscript>Ti<Subscript>0.5</Subscript>O<Subscript>3</Subscript> with B<Subscript>2</Subscript>O<Subscript>3</Subscript> and CuO additions

The influences of B₂O₃ and CuO (BCu, B₂O₃: CuO = 1:1) additions on the sintering behavior and microwave dielectric properties of LiNb_0.6Ti_0.5O₃ (LNT) ceramics were investigated. LNT ceramics were prepared with conventional solid-state method and sintered at temperatures about 1,100 °C. The sintering temperature of LNT ceramics with BCu addition could be effectively reduced to 900 °C due to the liquid phase effects resulting from the additives. The addition of BCu does not induce much degradation in the microwave dielectric properties. Typically, the excellent microwave dielectric properties of ε_r = 66, Q × f = 6,210 GHz, and τ _f  = 25 ppm/^oC were obtained for the 2 wt% BCu-doped sample sintered at 900 °C. Chemical compatibility of silver electrodes and low-fired samples has also been investigated.     

Synthesis and characterization of BaTiO<Subscript>3</Subscript>-based X9R ceramics

The effects of (Na_0.5Bi_0.5)TiO₃ (NBT) and MgO addition on the dielectric properties and microstructures of BaTiO₃ (BT) ceramics were investigated. NBT was first added to Nb₂O₅-doped BT system. As NBT content increases from 0 to 0.2 mol, the Curie temperature of the systems shifts to high temperatures and dielectric constant peak at T _c is suppressed evidently. The variation of capacity (ΔC/C _20 °C (%)) of the system at 200 °C decreases with increasing NBT content from 0.1 to 0.2 mol, but that of −55 and 125 °C increases monotonously. The stable temperature characteristics of the dielectric properties improved by NBT doping would be connected with the distortion and deformation of the structure induced by substitution of Na⁺ and Bi³⁺ into Ba sites. MgO was employed to further flatten the ΔC/C _20 °C–T curve. It is very helpful for this ceramic system to satisfy the requirement of EIA-X9R specification on ΔC/C _20 °C and still keep a satisfied dielectric constant. The addition of MgO improved effectively the temperature stability of the dielectric properties. Changes of the crystalline structure and microstructure induced by MgO doping might contribute to these improvements.     

Low-firing Li<Subscript>2</Subscript>ZnTi<Subscript>3</Subscript>O<Subscript>8</Subscript> microwave dielectric ceramics with BaCu(B<Subscript>2</Subscript>O<Subscript>5</Subscript>) additive

Phase purity, microstructure, sinterability and microwave dielectric properties of BaCu(B₂O₅)-added Li₂ZnTi₃O₈ ceramics and their cofireability with Ag electrode were investigated. A small amount of BaCu (B₂O₅) can effectively reduce the sintering temperature from 1075°C to 925°C, and it does not induce much degradation of the microwave dielectric properties. Microwave dielectric properties of ε _r = 23·1, Q × f = 22,732 GHz and τ _f = − 17·6 ppm/°C were obtained for Li₂ZnTi₃O₈ ceramic with 1·5 wt% BaCu(B₂O₅) sintered at 925°C for 4 h. The Li₂ZnTi₃O₈ +BCB ceramics can be compatible with Ag electrode, which makes it a promising microwave dielectric material for low-temperature co-fired ceramic technology application.     

Effects of addition of BiFeO<Subscript>3</Subscript> on phase transition and dielectric properties of BaTiO<Subscript>3</Subscript> ceramics

Samples of xBiFeO₃–(1 − x)BaTiO₃ (x = 0, 0.02, 0.04, 0.06, 0.07 and 0.08) were synthesized by solid state reaction technique and sintered in air in the temperature range 1,220–1,280 °C for 4 h. X-ray diffraction data showed that 2–8 mol% BiFeO₃ can dissolve into the lattice of BaTiO₃ and form single perovskite phase. The crystal structure changes from tetragonal to cubic phase at room temperature when 8 mol% of BiFeO₃ was added into BaTiO₃. Scanning electron microscope images indicated that the ceramics have compact and uniform microstructures, and the grain size of the ceramics decreases with the increase of BiFeO₃ content. Dielectric constants were measured as functions of temperatures (25–200 °C). With rising addition of BiFeO₃, the Curie temperature decreases. For the sample with x = 0.08, the phase transition occurred below room temperature. The boundary between tetragonal and cubic phase of the BiFeO₃–BaTiO₃ system at room temperature locates at a composition between 7 and 8 mol% of BiFeO₃. The diffusivity parameter γ for compositions x = 0.02 and x = 0.07 is 1.21 and 1.29, respectively. The relaxor-like behaviour is enhanced by the BiFeO₃ addition.     

Dielectric properties of Pb(Zn<Subscript>1/3</Subscript>Ta<Subscript>2/3</Subscript>)O<Subscript>3</Subscript>-introduced (Ba,Pb)TiO<Subscript>3</Subscript> ceramic system

Ceramic powders of the Pb(Zn_1/3Ta_2/3)O₃-introduced BaTiO₃–PbTiO₃ system were prepared using a B-site precursor method. Perovskite formation tendencies of the system compositions were determined by X-ray diffraction. Weak-field low-frequency dielectric properties of the sintered ceramics were investigated. Dielectric constant spectra were further analyzed in terms of diffuseness. Internal microstructures of the ceramics were also examined.     

Low-temperature sintering and microwave dielectric properties of MgTiO<Subscript>3</Subscript> ceramics

The effects of CuO–Bi₂O₃–V₂O₅ additions on the sintering temperature and the microwave dielectric properties of MgTiO₃ ceramics were investigated systematically. The CuO–Bi₂O₃–V₂O₅ (CuBiV) addition significantly lowered the densification temperature of MgTiO₃ ceramics from 1400 °C to about 900 °C, which is due to the formation of the liquid-phase of BiVO₄ and Cu₃(VO₄)₂ during sintering. The saturated dielectric constant (ε_r) increased, the maximum quality factor (Qf) values decreased and the temperature coefficient of resonant frequency (τ_f) shifted to a negative value with the increasing CuBiV content, which is mainly attributed to the increase of the second phase BiVO₄. MgTiO₃ ceramics with 6 wt.% CuBiV addition sintered at 900 °C for 2 h have the excellent microwave dielectric properties: ε _r= 18.1, Qf = 20300 GHz and τ_f = −57 ppm/ °C.     

Preparation and phase formation of perovskite Pb(Ni<Subscript>1/3</Subscript>Nb<Subscript>2/3</Subscript>)O<Subscript>3</Subscript> by a reaction-sintering process

Pyrochlore-free Pb(Ni_1/3Nb_2/3)O₃ perovskite ceramics produced by a simple and effective reaction-sintering process were investigated. Without any calcination, the mixture of PbO, Ni(NO₃)₂ and Nb₂O₅ was pressed and sintered directly into PNN ceramics. Density of 98.5% of theoretical value was obtained after sintered at 1230 °C for 2 h in air. 99.3% of theoretical density was obtained after sintered at 1,200 °C for 2 h in PbO compensated atmosphere. PNN ceramic with dielectric constant 1,680 at 25 °C and 1 kHz has been obtained.     

Dielectric properties of B<Subscript>2</Subscript>O<Subscript>3</Subscript> doped Sm(Co<Subscript>1/2</Subscript>Ti<Subscript>1/2</Subscript>)O<Subscript>3</Subscript> ceramics at microwave frequency

The microwave dielectric properties and the microstructures of Sm(Co_1/2Ti_1/2)O₃ ceramics with B₂O₃ additions (0.25 and 0.5 wt%) prepared by conventional solid-state route have been investigated. The prepared Sm(Co_1/2Ti_1/2)O₃ exhibited a mixture of Co and Ti showing 1:1 order in the B-site. Doping with B₂O₃ (up to 0.5 wt%) can effectively promote the densification of Sm(Co_1/2Ti_1/2)O₃ ceramics with low sintering temperature. It is found that Sm(Co_1/2Ti_1/2)O₃ ceramics can be sintered at 1,260 °C due to the grain boundary phase effect of B₂O₃ addition. At 1,290 °C, Sm(Co_1/2Ti_1/2)O₃ ceramics with 0.5 wt% B₂O₃ addition possess a dielectric constant (ε _r) of 27.7, a Q × f value of 33,600 (at 9 GHz) and a temperature coefficient of resonant frequency (τ_f) of −11.4 ppm/ °C. The B₂O₃-doped Sm(Co_1/2Ti_1/2)O₃ ceramics can find applications in microwave devices requiring low sintering temperature.     

Effect of nanometer barium titanate powders on the dielectric properties of X7R ceramics

High dielectric constant X7R dielectric materials were prepared by doping with nanometer BaTiO₃ additives, with a dielectric constant as high as 5,400 and dielectric loss lower than 1.0% at 25 °C, when they were sintered at 1,240 °C for 4 h. The effects of nanometer BaTiO₃ additives on the microstructure and dielectric properties of X7R ceramics were investigated in this paper. The nanometer BaTiO₃ additives were prepared by sol–gel method with an average particle size of ~65 nm. It was favorable by nanometer BaTiO₃ additives to make the ceramics hold high dielectric constant and still satisfy the requirement of EIA X7R specification. Due to the special nano-effect of the nanometer BaTiO₃ additives, the densification of ceramics were promoted effectively, which resulted in the increase of dielectric constant. The temperature-capacitance characteristics which satisfied X7R specification were attributed to the formation of abundant “core–shell” structure, which gave rise to the abundant spontaneous polarization microarea and the decrease of the tetragonality (c/a ratio).     

Study of the structural and dielectric properties of Bi<Subscript>2</Subscript>O<Subscript>3</Subscript> and PbO addition on BiNbO<Subscript>4</Subscript> ceramic matrix for RF applications

In this paper, the structural and dielectric properties of BNO (BiNbO₄) was investigated as a function of the external RF frequency and temperature. The BNO Ceramics, prepared by the conventional mixed oxide method and doped with 3, 5 and 10 wt. % Bi₂O₃–PbO were sintered at 1,025 °C for 3 h. The X-ray diffraction patterns of the samples sintered, shown the presence of the triclinic phase (β-BNO). In the measurements obtained at room temperature (25 °C) was observed that the largest values of dielectric permittivity (ε′ _r ) at frequency 100 kHz, were for the samples: BNO5Bi (5 wt. % Bi₂O₃) and BNO5Pb (5 wt. % PbO) with values ε′ _r ~ 59.54 and ε′ _r ~ 78.44, respectively. The smaller values of loss tangent (tan δ) were for the samples: BNO5Bi and BNO3Pb (3 wt. % PbO) with values tan δ ~ 5.71 × 10⁻⁴ and tan δ ~ 2.19 × 10⁻⁴, respectively at frequency 33.69 MHz. The analysis as a function of temperature of the dielectric properties of the samples, obtained at frequency 100 kHz, showed that the larger value of the relative dielectric permittivity was about ε′ _r ~ 76.4 at temperature 200 °C for BNO5Pb sample, and the value smaller observed of dielectric loss was for BNO3Bi sample at temperature 80 °C, with about tan δ ~ 5.4 × 10⁻³. The Temperature Coefficient of Capacitance (TCC) values at 1 MHz frequency, present a change of the signal from BNO (−55.06 ppm/°C) to the sample doped of Bi: BNO3Bi (+86.74 ppm/°C) and to the sample doped of Pb: BNO3Pb (+208.87 ppm/°C). One can conclude that starting from the BNO one can increase the doping level of Bi or Pb and find a concentration where one have TCC = 0 ppm/°C, which is important for temperature stable materials applications like high frequency capacitors. The activation energy (H) obtained in the process is approximately 0.55 eV for BNO sample and increase with the doping level. These samples will be studied seeking the development ceramic capacitors for applications in radio frequency devices.     

Textured BaTi<Subscript>2</Subscript>O<Subscript>5</Subscript> ceramic synthesized by laser rapid solidification method and its dielectric properties

Textured poly crystalline barium dititanate BaTi₂O₅ (BT2) ceramics with a preferred 〈010〉 orientation were synthesized by laser rapid solidification method, with a CO₂ laser. The 〈010〉 orientation of the BT2 is along the laser incident direction, and the orientation factor (f) and relative density of the unannealed BT2 sample are 0.40 and 96.2%, respectively. The two quantities increase with increasing annealing time, and reach the maximum values of 0.42 (annealed at 1,000 °C for 12 h) and 97.5% (annealed at 1,000 °C for 24 h), respectively. The images of scanning electron microscopy reveal that the BT2 are composed of flake-like microstructures with the maximum thickness of 20 μm and dimension of 0.6 mm, which are parallel to the laser incident direction. The measured Curie temperature (T _c) and the maximum dielectric constant (ε_max) are 443 and 6,000 °C, respectively.     

Effect of spark plasma sintering temperature on the phase equilibria and dielectric properties of BaTi2O5 ceramics

The effect of sintering temperature (ranging from 1055 to 1200 °C) on the phase ingredient and dielectric property of the nominal BaTi₂O₅ ceramics (starting with the Ba/Ti of 1:2) fabricated by a spark plasma sintering method were systematically studied. At the first stage, BaTi₂O₅ component was enhanced in the sintering temperature range of 1055–1120 °C; it turned out to be the dominant phase. For these BaTi₂O₅ phase dominated ceramics, the Curie temperature T _c rised on increasing the sintering temperature and saturated around 440 °C with the maximum dielectric constant of 500. Further increasing the sintering temperature, the decomposition of the obtained BaTi₂O₅ into BaTiO₃ extensively happened; the ceramics turned to be the BaTi₂O₅ and BaTiO₃ coexisting state. These ceramics can be characterized by two dielectric anomalies. One at ~420 °C stood for the phase transition of BaTi₂O₅ while the other at ~150 °C stood for the transition of BaTiO₃, which is exceptionally high as the normal BaTiO₃ ceramics. Further increasing the sintering temperature (until 1200 °C) would dramatically enhance the BaTiO₃ phase; the ceramics showed T _c at 130 °C with the maximum dielectric constant of 1800.     

Influence of 3d-elements on dielectric properties of BaTiO<Subscript>3</Subscript> ceramics

The microstructure and dielectric properties of Yb-Mn- and Yb-Ni-substituted BaTiO₃ ceramics are investigated in this paper. Both Yb-Mn- and Yb-Ni-substituted BaTiO₃ ceramics satisfy the X8R specification (−55 ^∘C to 150 ^∘C, Δ C = ±15% or less) for automotive application when CaZrO₃ is incorporated in the formulations. It is found that both Mn and Ni ions can suppress the diffusion of Yb and CaZrO₃ into BaTiO₃ grains, resulting in formation of core-shell structures in the grains. It is found that Mn is more favorable to stabilize the core-shell structure in BaTiO₃ ceramics as compared with Ni.     

Temperature-stable and low loss Fe-containing dielectrics in BaO-Ln<Subscript>2</Subscript>O<Subscript>3</Subscript>-Fe<Subscript>2</Subscript>O<Subscript>3</Subscript>-Ta<Subscript>2</Subscript>O<Subscript>5</Subscript> system

Polycrystalline samples of Ba₄Ln₂Fe₂Ta₈O₃₀ (Ln = La and Nd) were prepared by a high temperature solid-state reaction technique. The formation, structure, dielectric and ferroelectric properties of the compounds were studied. Both compounds are found to be paraelectrics with filled tetragonal tungsten bronze (TB) structure at room temperature. Dielectric measurements revealed that the present ceramics have exceptional temperature stability, a relatively small temperature coefficient of dielectric constant (τ _ε ) of −25 and −58 ppm/°C, with a high dielectric constant of 118 and 96 together with a low dielectric loss of 1.2 × 10⁻³ and 2.8 × 10⁻³ (at 1 MHz) for Ba₄La₂Fe₂Ta₈O₃₀ and Ba₄Nd₂Fe₂Ta₈O₃₀, respectively. The measured dielectric properties indicate that both materials are possible candidates for the fabrication of discrete multilayer capacitors in microelectronic technology.     

Structure and properties of Ba(Zr<Subscript>0.2</Subscript>Ti<Subscript>0.8</Subscript>)O<Subscript>3</Subscript> ceramics prepared by spark plasma sintering

Ba(Zr_0.2Ti_0.8)O₃ (BZT) ceramics are prepared from spray-dried powder by spark plasma sintering (SPS) and by normal sintering. By the application of SPS, ceramics with >96% relative densities could be obtained by sintering at 1,100 °C for 5 min in air atmosphere. The pellet as sintered by SPS at 1,100 °C was black and conductive. Although SPS was carried out in air atmosphere, the samples were deoxidized by heating the carbon die. By post-annealing at 1,000 °C for 12 h in air, the pellet was oxidized and became white and insulating. Grain growth was suppressed in the ceramics prepared by SPS, and the average grain size was 0.52 μm. The starting powder contained 1.90% carbon, mainly as binder, and the SPS-prepared ceramics and ordinary prepared ceramics contained 0.15 and 0.024% carbon, respectively. The BZT ceramics obtained by SPS and the subsequent annealing at 1,000 °C for 12 h exhibited a mild temperature dependence of their dielectric constant. The field-induced displacement of the BZT ceramics was less hysteretic and smaller than that of the ceramics sintered by the conventional method.     

Microwave dielectric properties of Bi(Sc<Subscript>1/3</Subscript>Mo<Subscript>2/3</Subscript>)O<Subscript>4</Subscript> ceramics for LTCC applications

A novel microwave dielectric ceramics Bi(Sc_1/3Mo_2/3)O₄ with low firing temperature were prepared via the solid reaction method. The specimens have been characterized using scanning electron microscopy, X-ray diffraction, Raman spectroscopy and DC conductivity. The Bi(Sc_1/3Mo_2/3)O₄ ceramics showed B-site ordered Scheelite-type structure with space group C2/c. Raman analysis indicated that prominent bands were attributed to the normal modes of vibration of MoO₄ ^2? tetrahedra. The dielectric loss of Bi(Sc_1/3Mo_2/3)O₄ ceramics can be depended strongly the bulk conductivity by DC measurement. The superior microwave dielectric properties are achieved in the Bi(Sc_1/3Mo_2/3)O₄ ceramic sintered at 875 °C/4 h, with dielectric constant?~?25, Q?×?f ~?51,716 GHz at 6.4522 GHz and temperature coefficient of resonance frequency ~???70.4 ppm/°C. It is a promising microwave dielectric material for low-temperature co-fired ceramics technology.