奥林巴斯E-PL1s微单相机

奥林巴斯E-PL1s为M4/3系统的新型号,号称是世界上最轻量的可换镜头数码相机。新款的E-PEN系列相机E-PL1s在E-PL1基础上增加了红色配色,并推出了全新M.Zuiko Digital14-42mm II1:3.5-5.6新套头,最近对焦距离为25cm(14-19mm)、30cm(20-42mm),最大摄影倍率0.19倍,含有7枚     

三倍录像模式的数字式摄像机

日本佳能公司将于2001年3月中旬上市具有3倍录像功能的数字式摄像机`佳能数字式摄像机FV20'.该产品通过采用最新开发的图像压缩格式,可以3倍于原来的磁带拍摄时间进行图像拍摄.也就是说原来长80 min的磁带现在可以拍摄4 h.该产品的摄像模式共有四种,除标准拍摄模式(1倍)外,还有3倍拍摄模式ELP、2倍拍摄模式DSP和1．5倍的LP模式.FV20的摄像元件为总像素46万(有效像素29万)且配备色彩补偿过滤器的1／4英寸隔行扫描(Interlace)CCD.摄像机配备10倍光学变焦镜头(以35 mm胶片相机换算,相当于48～480 mm).与数字变焦镜头配合使用时可实现200…     

彩色有机薄膜电致发光器件及显示技术

对性能稳定的彩色薄膜有机EL器件进行了研究.其中绿色有机器件的半亮度寿命为14000小时(初始亮度100cd/m2),已达到实用化的要求.红色、蓝色和白色器件的半亮度寿命(初始亮度100cd/m2)分别达到了3750、1016和2850小时.在得到稳定的绿色有机薄膜电致发光器件基础上,对矩阵显示屏及动态显示技术进行了研究.得到了面积为48mm×30mm、分辨率为2线/mm的96×60象素矩阵显示器,其中单位象素的有效发光面积为0.4mm×0.4mm,单元间隙为0.1mm.并设计了有效的驱动和控制电路,实现了无"交叉效应"的、高清晰度的动态图形显示.显示器在1/64的驱动占空比下的显示亮度大于100 cd/m2,屏的功耗为0.6W.     

汽车万向节电镀锌螺栓断裂的原因分析

汽车万向节紧固螺栓（以后简称螺栓）在镀锌处理后机械性能下降，在试运行过程中就已断裂。为探讨镀锌螺栓断裂的原因，对断裂螺栓进行了测试分析。     

一种新型液晶透镜的光学成像特性研究

在前人的单圆孔电极液晶透镜的基础上进行了改进,使用聚酰亚胺取代玻璃作为绝缘层,得到了通光孔径为2mm、工作电压最低为1.1V_(rms)的新型液晶透镜.结合几何光学和液晶理论提出了不同于前人解释液晶透镜原理的模型,推导出该液晶透镜的焦距公式以及相位延迟公式.在1.1～20V_(rms)电压范围下测试,得到与公式计算值基本一致的该液晶透镜的焦距范围20～480mm.重点研究了该液晶透镜的调制传递函数(MTF),发现该液晶透镜的光学成像能力与控制电压成正比关系,随着电压的增大该液晶透镜的成像性能逐渐增强.     

TRIP800激光焊焊接接头组织与性能

本文通过改变激光焊的焊接功率、焊接速度以及离焦量的工艺参数对厚度为1.8mm的TRIP800钢板进行焊接,激光焊接时最佳工艺参数为焊接速度为7mm/s,最焊接功率为570W,离焦量为-1mm;在断口扫描照片分析得到为典型的韧性断裂,断口上有大量的韧窝存在,从断裂机理上来看属于典型的微孔聚集型断裂.     

降低成形费用为关键 相机镜头材料力图革新

2004年卡西欧(Casio)推出了极小的光学变焦相机"EXILIMEX-S100"(图1),320万有效像素光学、2.8倍变焦的机身,厚度却仅有1.67 cm而已,放到口袋里刚刚好.如此高度震撼的规格,比该公司的另一产品"EXILIM EX-S30"又薄了6.4mm.     

摆动工艺对钛合金窄间隙激光填丝焊缝成形及气孔率的影响

本文探索了光束摆动对TC4钛合金窄间隙激光填丝焊缝成形和气孔率的影响。研究结果表明,无摆动时,焊缝表面起伏不连续,横截面窄而深,增加光束摆动之后,表面成形连续均匀,横截面相对变得宽而浅。当采用垂直或圆形摆动方式,摆动幅度为1.5～2 mm,摆动频率在20～100 Hz之间时,获得了焊缝表面和横截面成形良好的焊接接头。当采用圆形摆动,摆幅为2 mm,摆动频率在100～200 Hz之间时,获得的焊缝无明显气孔。采用该工艺进行了20 mm厚TC4钛合金窄间隙激光填丝焊接,焊接接头呈银白色,焊缝均匀连续,接头拉伸性能测试表明,其最大抗拉强度达930 MPa,接头强度与母材等强,断裂方式为韧性断裂,拉伸试样断裂在母材。     

Icr13钢等温及回火碳化物特征及其对一次裂纹扩展的电镜观察

文献中曾报导1 Cr13钢中相界面沉淀对冲击二次裂纹扩展的阻碍作用。本文进一步对比等温及回火组织与力学性能关系及其对一次裂纹扩展的影响。试样热处理制度如下:1050℃保温1小时,部分样品直接于650℃,5小时;700℃,3小时等温处理;部分样品直接水淬,然后进行相同等温处理温度及时间的回火处理。拉伸试样(φ20×100mm)在FPX100万能试验机上进行;裂纹扩展试样(20××10×110mm)用三点弯曲预支长5mm裂纹,再置于PL 10高频疲劳试验机上,通过加压使裂纹扩展,然后磨成金相样,深腐蚀后在扫描镜下观     

小型DV摄像机新丁

佳能即将从5月下旬开始发售小型DV摄像机"IXYDV"系列中的新机型-"IXY DV 3".配备了6分之1英寸的CCD(68万像素)可以记录VGA(即640×480)模式的静态画面和XGA(1024×768)模式的静态画面,在信号处理上采用由该公司开发的摄像信号处理技术LSI,在记录动画时可以进行适合在电视机中播放的颜色信号处理,在记录静态画面时采用与数码相机有同等打印效果的信号处理方法,重现自然的颜色.该产品将采用开放式价格销售,市场价格估计在13万日元左右,约合人民币8125元.配件组件"AK-210"为另可选件,价格为2万8000日元,约合人民币1750元.     

m-consecutive-k-out-of-n:F systems

An m-consecutive-k-out-of-n:F system, consists of n components ordered on a line; the system fails if and only if there are at least m nonoverlapping runs of k consecutive failed components. Three theorems concerning such systems are stated and proved. Theorem one is a recursive formula to compute the failure probability of such a system. Theorem two is an exact formula for the failure probability. Theorem three is a limit theorem for the failure probability     

Reliability of a consecutivek-out-of-r-from-n:F system

The reliability of the consecutive k-out-of-r-from-n:F system is studied. For k=2 an explicit solution is given for n components in line or in cycle in the i.i.d. case. For k⩾3 sharp lower and upper bounds are given for the reliability of the system and demonstrated for different values of n, k, r, p. These bounds are exact for r=n, n-1, n-2, n-3, and for these values the exact analytic solution is also given     

AFM observation of OMVPE grown ErP on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates

ErP has been grown on InP (0 0 1), (1 1 1)A and (1 1 1)B substrates by low-pressure organometallic vapor-phase epitaxy. The morphological change with growth temperature has been explored by atomic force microscope. On all the substrates, ErP is grown in island structure. Height and area size of the ErP islands on (1 1 1)A substrate exhibit an obvious dependence on growth temperature. ErP islands grown at 540°C, that is the suitable temperature for ErP formation, gather to step edges to make wires.     

An O(kn) algorithm for a circularconsecutive-k-out-of-n:F system

An O(k×n) algorithm is described for evaluating the reliability of a circular consecutive-k-out- n:F system     

Bounds for reliability of consecutivek-within-m-out-of-n:F systems

Upper and lower bounds for the reliability of a (linear or circular) consecutive k-within-m-out-of-n:F system with unequal component-failure probabilities are provided. Numerical calculations indicate that, for systems with components of good enough reliability, these bounds quite adequately estimate system reliability. The estimate is easy to calculate, having computational complexity O(m²×n). For identically distributed components, a Weibull limit theorem for system time-to-failure is proved     

A technique for real-time measurement of Nth-orderderivativesdNV/dIN

A technique for the measurement of device derivatives d ^NV/dI^N of arbitrary order N described. Measurement is accomplished by injecting a test current composed of the sum of N square waves into the rest device, and then multiplying the corresponding voltage change by the product of those same square waves, followed by low-pass filtering. The algorithm is implemented in real time using a mixture of analog and digital circuitry, and its application to semiconductor laser control in high-speed optical communications is described     

解读1+1＞2

2004年6月,美国科利登公司完成了收购从事高端SoC测试设备的恩浦科技,此收购案从完成到现在已四个多月了,合并后的全新科利登公司营运情况如何,怎样将两家文化理念不同的公司整合成全新的公司,是所有关心科利登的人所关注的,因此,本刊记者就以上问题采访了科利登中国公司的总经理陈绪先生.     

PTCDA on Au(1 1 1), Ag(1 1 1) and Cu(1 1 1): Correlation of interface charge transfer to bonding distance

The electronic structure at the interfaces of 3,4,9,10-perylene tetracarboxylic dianhydride (PTCDA) and the metal surfaces Au(1 1 1), Ag(1 1 1) and Cu(1 1 1) was investigated using ultraviolet photoelectron spectroscopy (UPS). By combining these results with recent X-ray standing wave data from PTCDA on the same substrates clear correlation between the electronic properties and the interface geometry is found. The charge transfer between the molecule and the metal increases with decreasing average bonding distance along the sequence Au–Ag–Cu. Clear signatures of charge-transfer-induced occupied molecular states were found for PTCDA on Ag(1 1 1) and Cu(1 1 1). As reported previously by Zou et al. [Y. Zou et al., Surf. Sci. 600 (2006) 1240] a new hybrid state was found at the Fermi-level (E_F) for PTCDA/Ag(1 1 1), rendering the monolayer metallic. In contrast, the hybrid state for PTCDA/Cu(1 1 1) was observed well below E_F, indicating even stronger charge transfer and thus a semiconducting chemisorbed molecular monolayer. The hybridisation of molecular and Au electronic states could not be evidenced by UPS.     

Analysis of coplanar E-H planeT-junction using dissimilar rectangular waveguides

An analysis of a T-junction that differs from conventional H -plane T-junctions in that the T arm is rotated by 90° and coupling takes place through an inclined slot is presented. Since use of standard X-band waveguides results in such a T-junction operating above 11.7 GHz, nonstandard waveguide dimensions have been considered to bring down the operating frequency to 9.375 GHz. The effect of a change of the broad dimension of the primary feed waveguide on the resonant conductance is evaluated. The variations of resonant length with the angle of inclination of the slot, and coupling with frequency, are presented