基于端到端信令的大数据分析系统在VoLTE网络运维中的应用

VoLTE相比于传统的语音业务,具有接续时间短、语音清晰、终端能耗低、平滑回落切换等众多优点,是LTE网络时代语音业务的发展趋势。内蒙移动自Vo LTE商用以来,活跃用户已经超过400万,为了解决新业务的发展和运维分析手段欠缺之间的矛盾,内蒙移动在全区部署了基于端到端信令的大数据分析系统,本文阐述了内蒙移动依托其对VoLTE端到端信令的大数据聚合分析,实现了VoLTE用户网络指标管理、投诉管理、专题分析、VIP用户管理等功能,该系统有效的对Vo LTE业务进行了集中管控、实时保障,实现了对投诉处理的快速定界和全流程端到端业务质量分析。该工具在内蒙移动部署使用后,运维人员的KPI/KQI指标分析能力显著提升,各项指标均达到了集团考核要求,部分指标名列全国前列,内蒙移动的VoLTE网络运维效率得到了很好的提高,通过该系统对终端、用户数、用户画像的精准分析,为市场制定政策提供了强有力的依据,有效支撑了市场发展。     

IPTV系统端到端存在的问题研究

目前全国各地的运营商网络已基本趋向于全光网, 根据FTTH用户发展现状及IPTV/互联网电视业务发展情况, 随着IPTV用户的增多, 用户投诉开始增加,IPTV系统的端到端用户感知方案的系统性研究已势在必行.为了支撑网络建设、运维管理和营销策略,保证网络质量,实现智能化运营,急需研究出一整套的应对方案. 在此背景下,提出了课题研究.     

IPTV业务端到端质量保障的探讨

IPTV是电信运营商从传统电信网络运营商向综合信息服务提供商转型的一项战略性业务,它充分体现了"Triple-Play"的优势,是三网融合的典型代表.由于IP网络是一个尽力而为(BE)的普遍服务型网络,而IPTV是一个对实时性,音视频质量要求较高的业务,因此,深入分析影响IPTV业务质量的因素并有针对性地加以解决,将有效提高IPTV业务质量,提高IPTV业务的社会认同感,有利于IPTV业务广泛开展.本文从IPTV平台、承载网络、终端等层面分析,提出了IPTV业务端到端的质量保障方案.     

互联网电视端到端业务质量提升研究

与传统电视不同之处在于,互联网电视增加了电视观众与电视服务提供商直接的互动,极大地提高了节目的个性化和即时性。对于运营商的管理人员、技术人员和装维人员而言,互联网电视业务的维护与管理,特别是故障定位与排障,一直是日常运维中的难点。结合早期互联网电视业务的运维经验,本为尝试对互联网电视的端到端业务进行研究,旨在提高端到端的质量,提升互联网电视的业务分析、告警监控、故障定位等方面的能力。     

业界成立开放论坛，制定IPTV端到端技术规范

爱立信、AT＆T、法国电信、松下、飞利浦、三星、西门子、索尼及意大利电信日前宣布成立IPTV开放论坛（Open IPTV Forum）。该论坛作为一个行业联合会，负责为IPTV制定互联互通的端到端技术规范。     

爱立信将为沃达丰冰岛提供商用端到端IPTV解决方案

沃达丰冰岛近日选择了爱立信为冰岛的消费者提供端到端IPTV解决方案。爱立信将为沃达丰冰岛提供全套的IPTV解决方案和端到端系统集成服务，该集成解决方案的部署将是向基于爱立信IMS的融合多媒体业务演进的第一步。     

爱迪德与华为联手提供安全的端到端IPTV安全解决方案

爱迪德公司近日宣布．与华为技术有限公司达成合作伙伴关系．联手提供端到端IPTV安全解决方案。     

基于分布式的IPTV端到端传输质量拨测系统设计与实现

本文针对IPTV传输环节隐患排查、故障定位、责任落实等问题,提出一种基于分布式的IPTV端到端传输质量拨测方案。此方案将IPTV拨测仪部署于IPTV传输过程中的关键节点,进行主动和被动拨测,同时结合码流数据的汇总处理,实现对IPTV传输系统端到端传输质量的测量与评估。     

打造融合客服支撑 实现全面业务保障

随着移动宽带的盛行,现有的客服和运维支撑系统在应对客户咨询及投诉时显得力不从心,这就需要建立一个相互协作、有效打通的端到端客服支撑体系,以大幅提高综合运维水平,推动全面业务保障的实现。     

IPTV端到端组播推送网络的关键配置技术

IPTV作为一种高带宽、高质量的新型互联网多媒体业务,对电信运营商的IP城域网提出了更高要求。组播技术与传统单播技术相比,在传输效率相当的基础上具有网络带宽不随用户数量线性增长的优点,可以有效地节约视频服务器和承载网络的负载。因此,电信运营商要高效且经济地部署和实现IPTV业务,建议采用端到端组播推送,且IP组播网络的配置是关键。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.