A Dual-Band Self-Oscillating Mixer for -Band and -Band Applications

A self-oscillating mixer that employs both the fundamental and harmonic signals generated by the oscillator subcircuit in the mixing process is experimentally demonstrated. The resulting circuit is a dual-band down-converting mixer that can operate in $C$ -band from 5.0 to 6.0 GHz, or in $X$-band from 9.8 to 11.8 GHz. The oscillator uses active superharmonic coupling to enforce the quadrature relationship of the fundamental outputs. Either the fundamental outputs of the oscillator or the second harmonic oscillator output signals that exists at the common-mode nodes are connected to the mixer via a set of complementary switches. The mixer achieves a conversion gain between 5–12 dB in both frequency bands. The output 1-dB compression points for both modes of the mixer are approximately $-{hbox{5 dBm}}$ and the output third-order intercept point for $C$ -band and $X$ -band operation are 12 and 13 dBm, respectively. The integrated circuit was fabricated in 0.13-$mu {hbox{m}}$ CMOS technology and measures ${hbox{0.525 mm}}^{2}$ including bonding pads.      

A Phase-Locked Loop With Injection-Locked Frequency Multiplier in 0.18-$mu{hbox{m}}$ CMOS for $V$ -Band Applications

In this paper, a novel CMOS phase-locked loop (PLL) integrated with an injection-locked frequency multiplier (ILFM) that generates the $V$-band output signal is proposed. Since the proposed ILFM can generate the fifth-order harmonic frequency of the voltage-controlled oscillator (VCO) output, the operational frequency of the VCO can be reduced to only one-fifth of the desired frequency. With the loop gain smaller than unity in the ILFM, the output frequency range of the proposed PLL is from 53.04 to 58.0 GHz. The PLL is designed and fabricated in 0.18-$mu{hbox{m}}$ CMOS technology. The measured phase noises at 1- and 10-MHz offset from the carrier are $-$ 85.2 and $-{hbox{90.9 dBc}}/{hbox{Hz}}$, respectively. The reference spur level of $-{hbox{40.16 dBc}}$ is measured. The dc power dissipation of the fabricated PLL is 35.7 mW under a 1.8-V supply. It can be seen that the advantages of lower power dissipation and similar phase noise can be achieved in the proposed PLL structure. It is suitable for low-power and high-performance $V$-band applications.      

$S$ - and $C$ -Band Ultra-Compact Phase Shifters Based on All-Pass Networks

Ultra-compact phase shifters are presented. The proposed phase-shifting circuits utilize the lumped element all-pass networks. The transition frequency of the all-pass network, which determines the size of the circuit, is set to be much higher than the operating frequency. This results in a significantly small chip size of the phase shifter. To verify this methodology, 5-bit phase shifters have been fabricated in the $S$ - and $C$ -band. The $S$ -band phase shifter, with a chip size of 1.87 mm $,times,$0.87 mm (1.63 mm $^{2}$), has achieved an insertion loss of ${hbox{6.1 dB}} pm {hbox{0.6 dB}}$ and rms phase-shift error of less than 2.8$^{circ}$ in 10% bandwidth. The $C$ -band phase shifter, with a chip size of 1.72 mm $,times,$0.81 mm (1.37 mm $^{2}$), has demonstrated an insertion loss of 5.7 dB $pm$ 0.8 dB and rms phase-shift error of less than 2.3 $^{circ}$ in 10% bandwidth.      

$L$ -Band Polarization-Independent Reflective SOA for WDM-PON Applications

An $L$-band polarization-independent reflective semiconductor optical amplifier (RSOA) is demonstrated for the first time. Optical gain of greater than 21 dB and gain flatness better than 4 dB is achieved over the $L$-band. The polarization-dependent gain estimated using a polarization resolved spectrum is less than 1 dB over the $L$-band. The measured output saturation power is $-$1.0 dBm and the noise figure (NF) is 10 dB for the packaged device. The 3-dB frequency bandwidth for the device is 1.3 GHz making it suitable for 1.25-Gb/s modulated wavelength-division-multiplexed passive optical network networks. Further, the saturation power and the NF of the RSOA were compared with an SOA of identical length.      

A Digital Intensive Fractional-N PLL and All-Digital Self-Calibration Schemes

A digital intensive PLL featuring a digital filter in parallel with an analog feed-forward path and a digital controlled oscillator (DCO) is presented. Digital loop filter replaces analog passive filter to reduce chip area and associated gate-leakage in advanced process. It also allows the PLL loop gain and DCO gain to be digitally calibrated to within 100 ppm within 50 $mu{hbox{s}}$. Such fine frequency resolution enables the PLL to accurately compensate for the loop parameter variation due to process, voltage and temperature (PVT). The analog feed-forward path is insensitive to quantization error of fractional-N divider and DCO nonlinearity. Direct modulating the DCO frequency and phase through the analog feed-forward path, and compensating the modulating signal digitally for the DCO gain variation are demonstrated. At 3.6 GHz all fractional spurs are under $-$ 75 dBc. The phase noise at 400 kHz and 3 MHz are $-$115.6 dBc/Hz and $-$134.9 dBc/Hz, respectively. The chip is fabricated in a 0.13 $mu$ m CMOS process, and occupies an active area of 0.85 ${hbox{mm}}^{2}$ and draws 40 mA from a 1.5 V supply including all auxiliary circuitry.      

Delta-Sigma Modulation for Direct Digital Frequency Synthesis

This paper compares different $DeltaSigma$ modulation techniques for direct digital frequency synthesis (DDS). $DeltaSigma$ modulators such as MASH, feedforward, feedback, and error feedback have been implemented in both the phase and frequency domains in a CMOS DDS prototype IC fabricated in a 0.35-$mu$m CMOS technology with core area of $1.7times 2.1 {hbox {mm}}^{2}$ and total current consumption of 75 mA. Measured DDS performance demonstrates that the frequency domain $DeltaSigma$ modulation technique achieves better output spectrum purity than the phase domain method. Moreover, a programmable feedforward $DeltaSigma$ modulator is proposed to achieve different in-band and out-band noise shaping effects for DDS applications.      

A 0.65-V 2.5-GHz Fractional-N Synthesizer With Two-Point 2-Mb/s GFSK Data Modulation

We present ultra-low-voltage circuit design techniques for a fractional-N RF synthesizer with two-point modulation which was realized in 90-nm CMOS using only regular ${rm V}_{rm T}$ devices.; the voltage controlled oscillator, phase-frequency detector and charge pump operate from a 0.5 $~$V supply while the divider uses a 0.65$~$V supply. The frequency synthesizer achieves a phase noise better than $-$120 dBc/Hz at 3 MHz, while consuming 6 mW. A calibration technique to equalize the gain between the two modulation ports is introduced and enables phase/frequency modulation beyond the loop bandwidth of the phase-locked loop. Measurement results for 2-Mb/s GFSK modulation are presented.      

RF Oscillator Based on a Passive RC Bandpass Filter

A passive RC bandpass filter (BPF) based voltage-controlled-oscillator (VCO) operating at 2.5 GHz is presented. In GHz frequency range, a preferred type of an oscillator is either an LC oscillator or a ring oscillator. An LC oscillator exhibits an excellent phase noise performance while its fabrication cost is expensive due to the inductors. On the other hand, a ring oscillator can be built with standard CMOS devices resulting in a cheap fabrication cost. However, it has a poor phase noise and jitter performance and is sensitive to power supply noise. This paper proposes a RC BPF-based oscillator. Its property is closer to a LC oscillator rather than a ring oscillator and, as a result, improves the jitter performance due to power supply noise. Also, it can be fabricated in a standard CMOS process since there is no inductor. To prove the proposed concept, a RC BPF-based oscillator was designed and fabricated in a standard 0.13-$mu{hbox {m}}$ CMOS technology. An operating frequency of 2.5 GHz and phase noise of $-$ 95.4 dBc/Hz at 1$~$MHz offset was measured. Power consumption was 2.86 mW from a 1.3$~$ V supply voltage.      

A 5-GHz CMOS Type-II PLL With Low $K_{rm VCO}$ and Extended Fine-Tuning Range

A 5-GHz dual-path integer-$N$ Type-II phase-locked loop (PLL) uses an LC voltage-controlled oscillator and softly switched varactors in an overlapped digitally controlled integral path to allow a large fine-tuning range of approximately 160 MHz while realizing a low susceptibility to noise and spurs by using a low $K_{rm VCO}$ of 3.2 MHz/V. The reference spur level is less than $-$70 dBc with a 1-MHz reference frequency and a total loop-filter capacitance of 26 pF. The measured phase noise is $-$75 and $-$115 dBc/Hz at 10-kHz and 1-MHz offsets, respectively, using a loop bandwidth of approximately 30 kHz. This 0.25-${hbox{mm}}^{2}$ PLL is fabricated in a 90-nm digital CMOS process and consumes 11 mW from a 1.2-V supply.      

Low-Power Supply-Regulation Techniques for Ring Oscillators in Phase-Locked Loops Using a Split-Tuned Architecture

A supply-regulated phase-locked loop (PLL) employs a split-tuned architecture to decouple the tradeoff between supply-noise rejection performance and power consumption. By placing the regulator in the low-bandwidth coarse loop, the proposed PLL architecture allows us to maximize its bandwidth to suppress the oscillator phase noise with neither the power supply-noise rejection nor the power dissipation of the regulator being affected. A replica-based regulator introduces a low-frequency pole in its supply-noise transfer function and avoids degradation of supply-noise rejection beyond the regulator-loop's dominant pole frequency. The prototype PLL fabricated in a 0.18 $mu$m digital CMOS process operates from 0.5 to 2.5$~$GHz. At 1.5$~$GHz, the proposed PLL achieves 1.9$~$ ps long-term rms jitter and a worst case supply-noise sensitivity of ${-}$28$~$dB (0.5$~$rad/V), an improvement of 20 dB over conventional solutions, while consuming 2.2 mA from a 1.8 V supply.      

A 47 GHz Cross-Coupled VCO Employing High- Island-Gate Varactor for Phase Noise Reduction

A 47 GHz $LC$ cross-coupled voltage controlled oscillator (VCO) employing the high-$Q$ island-gate varactor (IGV) based on a 0.13 $mu{rm m}$ RFCMOS technology is reported in this work. To verify the improvement in the phase noise, two otherwise identical VCOs, each with an IGV and a conventional multi-finger varactor, were fabricated and the phase noise performance was compared. With $V_{DD}$ of 1.2 V and core power consumption of 3.86 mW, the VCOs with the IGV and the multi-finger varactor have a phase noise of $-$95.4 dBc/Hz and $-$91.4 dBc/Hz respectively, at 1 MHz offset, verifying the phase noise reduction with the introduction of the high-$Q$ IGV. The VCO with IGV exhibited an output power of around $-$15 dBm, leading to a FoM of $-$182.9 dBc/Hz and a tuning range of 3.35% (45.69 to 47.22 GHz).      

A Low Phase-Noise QVCO With Integrated Back-Gate Coupling and Source Resistive Degeneration Technique

A 0.18 $mu$ m CMOS quadrature voltage-controlled oscillator with an extremely-low phase noise is presented. The excellent phase noise performance is accomplished by integration of the back-gate quadrature phase coupling and source resistive degeneration techniques into a complementary oscillator topology. The measured phase noise is as low as ${-}133$ dBc/Hz at 1 MHz offset from 3.01 GHz. The output phase imbalance is less than 1$^{circ}$ . The output power is $-1.25{pm} 0.5$ dBm and harmonic suppression is greater than 30.8 dBc. The oscillator core consumes 5.38 mA from a 1.5 V power supply. This QVCO achieves the highest figure-of-merit of ${-}193.5$ dBc/Hz.      

180$^{circ}$ and 90$^{circ}$ Phase Shifting Networks With an Octave Bandwidth and Small Phase Errors

A new phase shifting network for both 180 $^{circ}$ and 90 $^{circ}$ phase shift with small phase errors over an octave bandwidth is presented. The theoretical bandwidth is 67% for the 180$^{circ}$ phase bit and 86% for the 90$^{circ}$ phase bit when phase errors are $pm 2^{circ}$. The proposed topology consists of a bandpass filter (BPF) branch, consisting of a LC resonator and two shunt quarter-wavelength transmission lines (TLs), and a reference TL. A theoretical analysis is provided and scalable parameters are listed for both phase bits. To test the theory, phase shifting networks from 1 GHz to 3 GHz were designed. The measured phase errors of the 180$^{circ}$ and the 90$^{circ}$ phase bit are $pm 3.5^{circ}$ and $pm 2.5^{circ}$ over a bandwidth of 73% and 102% while the return losses are better than 18 dB and 12 dB, respectively.      

Analysis and Design of a CMOS UWB LNA With Dual- -Branch Wideband Input Matching Network

A wideband low-noise amplifier (LNA) based on the current-reused cascade configuration is proposed. The wideband input-impedance matching was achieved by taking advantage of the resistive shunt–shunt feedback in conjunction with a parallel LC load to make the input network equivalent to two parallel $RLC$-branches, i.e., a second-order wideband bandpass filter. Besides, both the inductive series- and shunt-peaking techniques are used for bandwidth extension. Theoretical analysis shows that both the frequency response of input matching and noise figure (NF) can be described by second-order functions with quality factors as parameters. The CMOS ultra-wideband LNA dissipates 10.34-mW power and achieves ${ S}_{11}$ below $-$8.6 dB, ${ S}_{22}$ below $-$10 dB, ${ S}_{12}$ below $-$26 dB, flat ${ S}_{21}$ of 12.26 $pm$ 0.63 dB, and flat NF of 4.24 $ pm$ 0.5 dB over the 3.1–10.6-GHz band of interest. Besides, good phase linearity property (group-delay variation is only $pm$22 ps across the whole band) is also achieved. The analytical, simulated, and measured results agree well with one another.      

A 5-GHz CMOS Frequency Synthesizer With an Injection-Locked Frequency Divider and Differential Switched Capacitors

A phase-locked loop (PLL)-based frequency synthesizer at 5 GHz is designed and fabricated in 0.18-${rm mu}hbox{m}$ CMOS technology. The power consumption of the synthesizer is significantly reduced by using an injection-locked frequency divider (ILFD) as the first frequency divider in the PLL feedback loop. The synthesizer chip consumes 18 mW of power, of which only 3.93 mW is consumed by the voltage-controlled oscillator (VCO) and the ILFD at 1.8-V supply voltage. The VCO has the phase noise of $-$ 104 dBc/Hz at 1-MHz offset and an output tuning range of 740 MHz. The chip size is 1.1 mm $times$ 0.95 mm.      

70 GHz Folded Loop Dual-Mode Bandpass Filter Fabricated Using 0.18 $mu$ m Standard CMOS Technology

This letter presents the design and implementation of a 70 GHz millimeter-wave compact folded loop dual-mode on-chip bandpass filter (BPF) using a 0.18 $mu$m standard CMOS process. A compact BPF, consisting of such a planar ring resonator structure having dual transmission zeros was fabricated and designed. The size of the designed filter is 650$,times,$ 670 $mu$ m$^{2}$ . Calculated circuit model, EM simulated and measured results of the proposed filter operating at 70 GHz are shown in a good agreement and have good performance. The filter has a 3-dB bandwidth of about 18 GHz at the center frequency of 70 GHz. The measured insertion loss of the passband is about 3.6 dB and the return loss is better than 10 dB within the passband.      

Elliptic-Function CPW Low-Pass Filters Implemented by Means of Open Complementary Split Ring Resonators (OCSRRs)

In this letter, an elliptic low-pass filter (LPF) implemented in coplanar waveguide (CPW) technology by etching open complementary split ring resonators (OCSRRs) in the central strip is presented for the first time. The OCSRRs behave as series connected parallel resonant tanks, whereas metallic patches etched in the back side of the substrate provide the required shunt capacitance to achieve the elliptic function response. An order-5 elliptic LPF has been designed and fabricated to illustrate the possibilities of this new approach. The measured frequency response is in good agreement with the ideal elliptic function up to twice the cutoff frequency $(f_{c}=1 {rm GHz})$. Since OCSRRs are electrically small resonators, filter dimensions are also small (device length is 2.5 cm, namely $0.13lambda$ , where $lambda$ is the guided wavelength at $f_{c}$). This work is illustrative of the possibilities of OCSRRs for the design of compact planar filters and other microwave components.      

A Sub-100 $mu{rm W}$ Ku-Band RTD VCO for Extremely Low Power Applications

This letter presents the microwave performance of a sub-100 $mu{rm W}$ Ku-band differential-mode resonant tunneling diode (RTD)-based voltage controlled oscillator (VCO) with an extremely low power consumption of 87 $mu{rm W}$ using an InP-based RTD/HBT MMIC technology. In order to achieve the extremely low-power Ku-band RTD VCO, the device size of RTD is scaled down to $0.6times 0.6 mu{rm m}^{2}$. The obtained dc power consumption of 87 $mu{rm W}$ is found to be only 1/18 of the conventional-type MMIC VCOs reported in the Ku-band. The fabricated RTD VCO has a phase noise of $-$100.3 dBc/Hz at 1 MHz offset frequency and a tuning range of 140 MHz with the figure-of-merit (FOM) of $-$194.3 dBc/Hz.      

Low Phase Noise G$ _{m}$-Boosted Differential Gate-to-Source Feedback Colpitts CMOS VCO

This paper presents a ${g} _{ m}$-boosted differential gate-to-source feedback Colpitts (GS-Colpitts) CMOS voltage-controlled oscillator (VCO) that consumes a lower oscillation start-up current. The proposed architecture allows a wider range of saturation mode operation for the switching transistors, which helps suppress AM-to-FM conversion by these transistors. In addition, the phase noise contribution of the flicker noise in the switching transistor is reduced through the capacitor feedback network of the Colpitts oscillator. As a result, the proposed topology can achieve better phase noise performance and a higher figure of merit (FOM) compared to a conventional NMOS-only cross-coupled VCO. The proposed VCO is implemented in a 0.18-$mu{hbox {m}}$ CMOS for 1.78 to 1.93 GHz operation. At 1.86 GHz, the measurements show phase noise of $-$105 and $-hbox{128~dBc/Hz}$ (corresponding to ${rm FOM}= 191.2$) at offsets of 100 kHz and 1 MHz, respectively, while dissipating 1.8 mA from a 0.9-V supply.      

Demonstration of Broadband Wavelength Conversion at 40 Gb/s in Silicon Waveguides

We present ultra-broadband wavelength conversion in silicon photonic waveguides at a data rate of 40 Gb/s. The dispersion-engineered device demonstrates a conversion bandwidth spanning the entire $S$-, $C$-, and $L$-bands of the ITU grid. Using a continuous-wave $C$-band pump, an input signal of wavelength 1513.7 nm is up-converted across nearly 50 nm at a data rate of 40 Gb/s, and bit-error-rate measurements are performed on the converted signal.