一种宽阻带窄带腔体滤波器的设计

该文介绍了一种窄带带通腔体滤波器的原理和设计方法,通过加载电容原理,使滤波器的寄生通带远离通频带,并设计了带哑铃型横杆的谐振器结构,在谐振器连接点形成电压驻波零点,从而进一步抑制滤波器的寄生通带,实现了具有宽阻带的带通腔体滤波器。最后,利用微波仿真软件CST设计了一款中心频率为2.45 GHz,相对带宽为4.08%的窄带带通腔体滤波器。仿真结果表明,滤波器带外抑制高,阻带范围宽,通带内驻波良好,满足设计指标要求。     

一种220 GHz滤波器的设计

基于电感膜片矩形波导滤波器设计方法和加工流程,设计了一个220 GHz带通滤波器。滤波器采用玻璃片—硅片—陶瓷片结构,由硅片形成电感膜片结构,玻璃片、陶瓷片键合在硅片上形成闭合的谐振腔,采用集成电路的制作工艺,在加工前分析了工艺特性,优化了滤波器尺寸,避免工艺对滤波器关键尺寸的影响。采用信号源、功率计进行测试,测试结果表明,滤波器在220 GHz具有通带特性,带内损耗约为7 dB。     

基于遗传算法的太赫兹腔体滤波器辅助设计

太赫兹滤波器是太赫兹系统的重要器件,然而它的快速准确设计是难点。基于遗传算法(GA)和有限元法的联合仿真,实现了太赫兹滤波器的快速准确设计。采用HFSS-MATLAB-API脚本库,利用HFSS对于场仿真的精确性,同时在MATLAB中基于遗传算法对结果进一步优化,降低了试探性优化的盲目性。采用该方法设计了210~230 GHz带通滤波器,测试结果表明,带内插损均小于0.6 dB,带外抑制度大于30 dB,验证了该方法的准确性。     

一种小型化腔体带阻滤波器的设计

腔体滤波器由于具有结构牢固,性能稳定可靠,散热性好,品质因数(Q)高,损耗小及功率容量高等特点,使其在各类微波系统中得到广泛运用.为了使某腔体带阻滤波器小型化,在保证阻带带宽大于200 MHz和阻带抑制大于30 dB的情况下,通过优化谐振腔的电容加载结构及优化谐振腔的排列方式,将滤波器的高度降低了50％,长度减小了17...     

110 GHz带通太赫兹滤波器设计

对滤波器的高精确度理论设计及小误差的工艺实现进行探讨与设计加工。总结了国内外的多种设计经验,讨论了多种类型的滤波器设计方案,选取适当的滤波器结构形式,设计加工了110 GHz的感性窗耦合波导滤波器,其中感性窗耦合结构采用传统机械加工技术实现,与法兰盘结构一并集成。基于高频结构仿真(HFSS)软件进行仿真,结果表明：设计并制作的110 GHz带通滤波器,其中心频率为110 GHz,相对带宽为5%,插入损耗小于1 dB,带内回波损耗大于 20 dB,距中心频率2倍带宽处,带外抑制大于40 dB。     

114.3~123 GHz六阶带通滤波器设计

基于经典的半波长滤波器理论,设计了一种用于太赫兹通信系统的半波长磁耦合矩形波导带通滤波器。仿真结果表明,该滤波器中心频率为118 GHz,通带为114.3~123 GHz,相对带宽为7.4%;在131.8 GHz处的抑制度大于30 dB,通带插入损耗小于0.8 dB,通带回波损耗大于20 dB。经过实物测试,测试结果与仿真结果基本一致。这种滤波器的结构简单,制作难度低。     

滤波器插入损耗的准确测量

对产品来说,准确测取各项技术参数是保证产品质量的前题之一,而正确的测量技术和测量方法是测量准确的必要条件。本文旨在通过对滤波器衰减的分析、讨论、求得正确测取滤波器插入损耗的方法和条件。并以期克服目前有些单位和厂家,其中也包括为数不少的日本厂商,所沿用的测量电路和测量方法中存在一些不足或不正确之处。文中通过对测量条件的分析,指出了导致滤波器出现增益或负损耗现象的原因,并给出了实例。同时提供了电抗变换网络的最佳匹配电路形式。滤波器插入损耗的准确测量,对级数多、带宽窄、插损要求小的产品尤为重要。在我们的测量中,因采用了电抗变换网络和正确的测量技术和方法,已使被测滤波器的插入损耗测量误差小于±0.2dB。     

140 GHz MEMS矩形波导滤波器

设计并实现了一种采用微机械制造(MEMS)技术加工的D波段矩形波导膜片滤波器.采用有限元仿真软件HFSS分析了滤波器内腔镀膜厚度、粗糙度以及感性膜片厚度对滤波器主要性能的影响.采用MEMS深刻蚀工艺(DRIE)成功加工出了滤波器主体结构.通过完成结构深刻蚀、金属电镀和键合等关键工艺,首次制造出了D波段MEMS波导滤波器.样品测试结果为插入损耗0.4～0.7 dB,中心频率(140±3)GHz,带外抑制为≥18 dB,样品主要技术指标与设计值符合.     

基于HFSS的微调谐腔体带通滤波器设计

针对微调谐腔体带通滤波器设计制造中存在的问题,介绍了腔体带通滤波器的总体设计;论述了需要解决的问题,如优化计算、提高仿真精度和简化调谐结构,并对二端口网络等效替换、整体仿真和微调谐关键技术进行了分析;最后阐述了仿真与性能测试结果分析,测试结果分析说明微调谐腔体带通滤波器设计精确且拥有很好的应用前景。     

2.45GHz宽阻带高抑制腔体滤波器的研究设计

针对手持式谐波雷达发射机自身产生的谐波信号严重干扰接收到的探测目标谐波信号问题,该文设计了一种谐振器开路端加圆盘的结构,该结构能有效缩小滤波器体积和抑制高次谐振频率产生的寄生通带,并研究了圆盘半径、谐振杆长度、调谐螺钉长度和半径对腔体滤波器谐振频率的影响.结果表明,圆盘半径和调谐螺钉半径增大,则等效电容增加,谐振频率降...     

Micromachined V-band CMOS bandpass filter with 2 dB insertion loss

A low-insertion-loss V-band CMOS bandpass filter is demonstrated. The proposed filter architecture has the following features: the low-frequency transmission-zero (vz1) and the high-frequency transmission-zero (vz2) can be tuned by the series-feedback capacitor Cs and the parallelfeedback capacitor Cp, respectively. To reduce the substrate loss, the CMOS process compatible backside inductively-coupled-plasma (ICP) deep trench technology is used to selectively remove the silicon underneath the filter. After the ICP etching, this filter achieved insertion loss (1/S21) lower than 3 dB over the frequency range 52.5?76.8 GHz. The minimum insertion loss was 2 dB at 63.5 GHz, the best results reported for a V-band CMOS bandpass filter in the literature.     

13.3 GHz YBCO microstrip bandpass filter

The design and development of a 13.3 GHz three-pole Chebyshev bandpass filter using a YBa/sub 2/Cu/sub 3/O/sub 7- delta / thin film on an MgO substrate is described. An insertion loss of 0.2 dB at the centre frequency and an unloaded Q of 2800 are obtained at 77 K. The measured characteristics are better than other high-temperature superconductor planar filters so far reported.<>     

Untuned low insertion loss surface leaky wave filter

The letter presents a broadband low insertion loss surface leaky wave filter using reflective multistrip couplers on an optimum cut and orientation of lithium niobate. The insertion loss has been reduced to 3?4 dB without any inductors for phase-shift networks or tuning, and the out-of-band rejection is about 23 dB. The fractional bandwidth is up to 2?5%. The out-of-band rejection can be reduced to 40 dB, when the IDTs are apodised.     

低损耗双谐振微带带通滤波器设计

为了既满足实现双谐振的零度馈电结构,又能实现阻抗匹配,采用双点双线馈电技术和具有开口环、阶跃阻抗谐振双重特性的结构设计双通带滤波器。版图仿真结果表明:两个谐振频率分别为2.7 GHz和5.05 GHz,符合射频电子标签所需的两路信号,其对应的回波损耗分别为-38 dB和-49 dB,插入损耗为-0.2 dB和-0.4 dB,从而实现了低损耗特性和尖锐的选择性。     

Improved and compact 0.7 GHz tune-all bandpass filter

A compact tune-all bandpass filter is presented. This electronically tuned filter is based on series-coupled slow-wave resonators. It allows wide simultaneous and continuous tunings of centre frequency (+/-15% around 0.7 GHz) and bandwidth (from 50 to 100 MHz) with insertion loss IL<5.4 dB and return loss RL>11 dB. This two-pole bandpass filter exhibits also a very small surface of only 7.3times10^-3 lambda₀ ² and a -20 dB stop-band that extends up to 10 GHz     

采用新型介质集成波导腔的小型双频滤波器

提出了一种新式的横电磁波-基片集成波导(TEM-SIW)谐振腔。这种TEM-SIW谐振腔由经典的基片集成波导(SIW)腔发展而来。通过在SIW腔的中心位置加入短路销钉,将SIW腔体的上金属平面与腔四周导体壁开路构成TEM-SIW腔。相同谐振频率下,单个TEM-SIW腔的面积可以减小到传统的SIW谐振腔面积的9.5%。分析了主模式工作情况下TEM-SIW谐振腔和传统的SIW谐振腔的结构以及腔内的磁场分布。由于其磁场分布与工作在TEM模式的电容加载同轴腔相似,因此,基于这种谐振腔的滤波器可以很方便的借鉴经典的电容加载同轴腔滤波器的耦合结构和综合设计技术。最后,设计了一个基于TEM-SIW腔的三级双频滤波器,其性能已经通过了数值仿真和实验验证。     

40 GHz compact TFMS meander-line bandpass filter on silicon substrate

Presented is a compact millimetre-wave bandpass filter using a thin-film microstrip meander line on standard 0.18 mum CMOS silicon substrate without any post-processing step yet still reducing the substrate loss and crosstalk to a large extent. To miniaturize overall circuit size, a half-wavelength resonator is constructed in meander-line configuration and its resonant frequency is designed to be 40 GHz. The prototype single-resonator bandpass filter occupies a circuit area of 210 times 210 mum on silicon. Measured insertion loss is 2.5 dB, which agrees well with the design value in the simulations.     

Real-time programmable low power SC bandpass filter

A real-time programmable switched capacitor (SC) second-order bandpass filter is presented. It is based on the voltage inverter switch (VIS) principle using inverse recharging devices. These devices are realized with dynamic amplifiers in order to achieve low power dissipation. The filter contains only grounded or virtually grounded network capacitances and, therefore, it is insensitive to the parasitic capacitances between the bottom plate of the implemented MOS capacitors and the substrate. The circuit offers digital programming capability (two Q factors and three center frequencies) and low power dissipation (185 /spl mu/W at a sampling frequency of 8 kHz and with a power supply voltage of 10 V). The filter has been integrated in CMOS metal-gate technology.     

低损耗贴片式独块状介质滤波器的设计与制作

设计制作了一种低损耗、贴片式(SMD)独块状的八级介质滤波器。该滤波器采用切比雪夫响应的方法设计,利用εr为45的高Q值独块状微波陶瓷制作,谐振器之间使用电容和电容加载耦合。制备出了中心频率为897.5MHz、插入损耗小于2.5 dB的介质滤波器。测试结果表明,该滤波器满足800~1 500 MHz频率范围通讯基站要求。     

2.0-2.7 GHz programmable bandpass filter with RF-MEMS capacitance matrices

A programmable bandpass filter for 2.0?2.7 GHz centre frequencies and 450?500 MHz 3 dB bandwidth is presented. The filter is based on packaged RF-MEMS capacitor matrices as the tunable elements. The coupled-resonator filter topology was chosen with added transfer zeros. The results show excellent match between simulation and measurements. The measured insertion loss is 4.5?5.5 dB over the tuning range, and the linearity measurements show an OIP3 of 55? 64 dBm.