Electrodeposition of P-type BixSb2−xTey thermoelectric film from dimethyl sulfoxide solution

The electrochemical behaviors of Bi(III), Te(IV), Sb(III) and their mixtures in DMSO solutions were investigated using cyclic voltammetry and linear sweep voltammetry measurements. On this basis, Bi_xSb_2−xTe_y film thermoelectric materials were prepared by potentiodynamic electrodeposition technique from mixed DMSO solution, and the compositions, structures, morphologies as well as the thermoelectric properties of the deposited films were also analyzed. The results show that Bi_xSb_2−xTe_y compound can be prepared in a very wide potential range by potentiodynamic electrodeposition technique in the mixed DMSO solutions. After anneal treatment, the deposited film prepared in the potential range of −200 to −400 mV shows the highest Seebeck coefficient (185 μV/K), the lowest resistivity (3.34 × 10⁻⁵ Ω m), the smoothest surface, the most compact structure and processes the stoichiometry (Bi_0.49Sb_1.53Te_2.98) approaching to the Bi_0.5Sb_1.5Te₃ ideal material most. This Bi_0.49Sb_1.53Te_2.98 film is a kind of nanocrystalline material and (0 1 5) crystal plane is its preferred orientation.     

One-step electrochemical preparation of the ternary (BixSb1−x)2Te3 thin films on Au(1 1 1): Composition-dependent growth and characterization studies

This study reports on the synthesis of ternary semiconductor (Bi_xSb_1−x)₂Te₃ thin films on Au(1 1 1) using a practical electrochemical method, based on the simultaneous underpotential deposition (UPD) of Bi, Sb and Te from the same solution containing Bi³⁺, SbO⁺, and HTeO₂⁺ at a constant potential. The thin films are characterized by X-ray diffraction (XRD), atomic force microscopy (AFM), energy dispersive spectroscopy (EDS) and reflection absorption-FTIR (RA-FTIR) to determine structural, morphological, compositional and optic properties. The ternary thin films of (Bi_xSb_1−x)₂Te₃ with various compositions (0.0 ≤ x ≤ 1.0) are highly crystalline and have a kinetically preferred orientation at (0 1 5) for hexagonal crystal structure. AFM images show uniform morphology with hexagonal-shaped crystals deposited over the entire gold substrate. The structure and composition analyses reveal that the thin films are pure phase with corresponding atomic ratios. The optical studies show that the band gap of (Bi_xSb_1−x)₂Te₃ thin films could be tuned from 0.17 eV to 0.29 eV as a function of composition.     

Ternary CdxZn1−xSe deposited on Ag (1 1 1) by ECALE: Electrochemical and EXAFS characterization

This paper reports the characterization of ternary II-VI semiconductor nanocrystals, deposited by the electrochemical atomic layer epitaxy (ECALE) technique.In particular, morphological and structural properties of the ternary compounds of formula Cd_xZn_1−xSe deposited on Ag (1 1 1) have been characterized as a function of composition. The number of the attainable x values is limited by the necessity of using well-defined ZnSe/CdSe deposition sequences. However, the quantitative analysis carried out on the basis of both electrochemical and extended X-ray absorption fine structure (EXAFS) experiments indicates that the ECALE method is a successful way of controlling the composition of Cd_xZn_1−xSe. In addition, the electrochemical measurements show that the amount of deposition is minimum in correspondence to the compound with x = 0.5, thus corroborating the hypothesis of a higher degree of disorder suggested both by morphological and structural investigation. The morphology was studied by atomic force microscopy (AFM). The structure of the films is estimated by EXAFS which is a powerful technique for the analysis of the local structure around chosen atoms.     

The underpotential deposition of Bi2Te3−ySey thin films by an electrochemical co-deposition method

Bi₂Te_3−ySe_y thin films were grown on Au(1 1 1) substrates using an electrochemical co-deposition method at 25 °C. The appropriate co-deposition potentials based on the underpotential deposition (upd) potentials of Bi, Te and Se have been determined by the cyclic voltammetric studies. The films were grown from an electrolyte of 2.5 mM Bi(NO₃)₃, 2 mM TeO₂, and 0.3 mM SeO₂ in 0.1 M HNO₃ at a potential of −0.02 V vs. Ag|AgCl (3 M NaCl). X-ray diffraction (XRD), scanning electron microscopy (SEM), and energy dispersive spectroscopy (EDS) were employed to characterize the thin films. XRD and EDS results revealed that the films are single phase with approximate composition of Bi₂Te_2.7Se_0.3. SEM studies showed that the films are homogeneous and have micronsized granular crystallites.     

Galvanic displacement of BixTey thin films from sacrificial iron group thin films

Bi_xTe_y thin films synthesized by galvanic displacement were systematically investigated by observing open circuit potential (OCP), surface morphology, microstructure and film composition. Surface morphologies and crystal structures of synthesized Bi_xTe_y thin films were strongly depended on the type of the sacrificial materials (i.e., nickel (Ni), cobalt (Co) and iron (Fe)). Galvanically deposited Bi_xTe_y thin films from the sacrificial Ni and Co thin films exhibited Bi₂Te₃ intermetallic compounds and hierarchical structures with backbones and sub-branches. A linear relationship of deposited Bi content in Bi_xTe_y thin films as a function of [Bi³⁺]/[HTeO₂⁺] ratio (within a range of less than 0.8) in the electrolyte was also observed. Surface morphologies of Bi_xTe_y thin films were altered with the film composition.     

Electrochemically deposited thermoelectric n-type Bi2Te3 thin films

Electrochemically deposited n-type BiTe alloy thin films were grown from nitric acid baths on sputtered Bi_xTe_y/SiO/Si substrates. The film compositions, which varied from 57 to 63 at.% Te were strongly dependent on the deposition conditions. Surface morphologies varied from needle-like to granular structures depending on deposited Te content. Electrical and thermoelectric properties of these electrodeposited Bi_xTe_y thin films were measured before and after annealing and compared to those of bulk Bi₂Te₃. Annealing at 250 °C in reducing H₂ atmosphere enhanced thermoelectric properties by reducing film defects. In-plane electrical resistivity was highly dependent on composition and microstructure. In-plane Hall mobility decreased with increasing carrier concentration, while the magnitude of the Seebeck coefficient increased with increasing electrical conductivity to a maximum of −188.5 μV/K. Overall, the thermoelectric properties of electrodeposited n-type BiTe thin films after annealing were comparable to those of bulk BiTe films.     

Structural and magnetic properties of NiFe2−xBixO4 (x = 0, 0.1, 0.15) nanoparticles prepared via sol-gel method

NiFe_2−xBi_xO₄ (x = 0, 0.1, 0.15) nanopowders were synthesized via sol-gel method. The precursor gels were calcined at 773 K in air for 1 h to obtain the pure nanostructured NiFe_2−xBi_xO₄ spinel phase. The crystal structure and magnetic properties of the substituted spinel series of NiFe_2−xBi_xO₄ have been investigated by means of ⁵⁷Fe Mössbauer spectroscopy, transmission electron microscopy and alternating gradient force magnetometry. Mössbauer spectroscopic measurements revealed that Bi³⁺ cations tend to occupy octahedral positions in the structure of the substituted ferrite, i.e., the crystal-chemical formula of the as-prepared nanoparticles may be written as: (Fe)[NiFe_1−xBi_x]O₄ (x = 0, 0.1, 0.15), where parentheses and square brackets enclose cations on sites of tetrahedral and octahedral coordination, respectively. Selective area electron diffraction studies provided evidence that the samples of the NiFe_2−xBi_xO₄ series, independently of x, exhibit the cubic spinel structure. The values of the saturation magnetization and the coercive field of NiFe_2−xBi_xO₄ nanoparticles were found to decrease with increasing degree of bismuth substitution.     

Structure,dielectric and optical properties of Bi1.5+xZnNb1.5O7+1.5x pyrochlores

Non-stoichiometric pyrochlore ceramics with formula Bi_1.5+xZnNb_1.5O_7+1.5x were systematically investigated. Crystal structures of the compounds were studied by X-ray diffraction (XRD) technique. The structures were identified as pure cubic pyrochlores when |x| < 0.1. Dielectric and optical properties of the compositions when x = −0.1, 0 and 0.1 were studied. All samples have high resistivities and low dielectric loss. With increasing x in Bi_1.5+xZnNb_1.5O_7+1.5x, the lattice constant, permittivity, temperature coefficient of permittivity and thermal expansion coefficient increased, while dielectric loss decreased. Raman spectra indicated that the intensity of Bi–O stretching become stronger with increasing x. A vibration mode emerging at 861 cm⁻¹ when x = −0.1 means that the B–O coordination environment is significantly more disordered. Absorption spectra suggested that the bandgap energy become lower from 2.86 to 2.70 eV as lattice constants increased. Strong absorption occurs at wavelengths from 433 to 459 nm, shows that samples have the ability to respond to wavelengths in the visible light region.     

Improved cycling performance of oxygen-stoichiometric spinel Li1+xAlyMn2−x−yO4+δ at elevated temperature

Li_1+xAl_yMn_2−x−yO_4±δ spinel cathode materials for lithium-ion batteries have been prepared by two methods, a specific two-step and the conventional one-step solid-state calcination methods. Compared with the conventional method, the new two-step method can guarantee the oxygen stoichiometry in spinel samples as well as reduced surface area. These characters lead to the improvement in cycling performance of spinel cathode even at elevated temperature. Moreover, the increase in doping amount of Al into Mn-spinel contributes to smearing the oxygen deficiency at high calcination temperature (1000 °C). The oxygen stoichiometric spinel samples exhibited greatly improved cycling performance. Further, Mn dissolution from spinel cathodes into the electrolyte was sufficiently suppressed even at elevated temperature of 60 °C. This beneficial influence would be reflected more remarkably in the cycles of lithium-ion full cells (spinel/C).     

Electrochemical properties of La1−xSrxFeO3 (x = 0.2, 0.4) as negative electrode of Ni-MH batteries

La_(1−x)Sr_xFeO₃ (x = 0.2,0.4) powders were prepared by a stearic acid combustion method, and their phase structure and electrochemical properties were investigated systematically. X-ray diffraction (XRD) analysis shows that La_(1−x)Sr_xFeO₃ perovskite-type oxides consist of single-phase orthorhombic structure (x = 0.2) and rhombohedral one (x = 0.4), respectively. The electrochemical test shows that the reaction at La_(1−x)Sr_xFeO₃ oxide electrodes are reversible. The discharge capacities of La_(1−x)Sr_xFeO₃ oxide electrodes increase as the temperature rises. With the increase of the temperature from 298 K to 333 K, their initial discharge capacity mounts up from 324.4 mA h g⁻¹ to 543.0 mA h g⁻¹ (when x = 0.2) and from 147.0 mA h g⁻¹ to 501.5 mA h g⁻¹ (when x = 0.4) at the current density of 31.25 mA g⁻¹, respectively. After 20 charge-discharge cycles, they still remain perovskite-type structure. Being similar to the relationship between the discharge capacity and the temperature, the electrochemical kinetic analysis indicates that the exchange current density and proton diffusion coefficient of La_(1−x)Sr_xFeO₃ oxide electrodes increase with the increase of the temperature. Compared with La_0.8Sr_0.2FeO₃, La_0.6Sr_0.4FeO₃ electrode is a more promising candidate for electrochemical hydrogen storage because of its higher cycle capacity at various temperatures.     

Microstructural and electrical behavior of Bi4V2−xCuxO11−δ (0 ≤ x ≤ 0.4)

Cation substituted bismuth vanadate possesses high oxygen ion conductivity at lower temperatures. The ionic conductivity of this material at 300 °C is 50–100 times more than any other solid electrolyte. Three phases (α, β, γ) are observed in the substituted compound; α and γ are low and high conducting phase, respectively. Samples of Bi₄V_2−xCu_xO_11−δ (x = 0–0.4) were prepared by solid-state reaction technique. Impedance spectroscopy measurements were carried out in the frequency range of 100 Hz to 100 kHz using gold sputtered cylindrical shaped pellets to obtain bulk ionic conductivities as a function of the substitution and temperature. The change of slopes observed in the Arrhenius plots is in agreement with the phase transitions for all the compositions. The highest ionic conductivity of the Cu-substituted compound was observed in Bi₄V_1.8Cu_0.2O_11−δ which is attributed to its lower activation energy. Microstructural studies indicated the stabilization of high temperature γ-phase at low temperature in those samples whose ionic conductivity observed was higher.     

Structural and electrochemical characterization of SnOx thin films for Li-ion microbattery

SnO_x thin films were prepared by reactive radio frequency magnetron sputtering with different sputtering powers. X-ray photoelectron spectroscopy suggested that all the films have similar chemical stoichiometry as SnO_1.5. X-ray diffraction and transmission electro microscopy results showed that crystal size of the SnO_x thin films gradually increases with increase of sputtering power from 50 to 150 W. Cyclic voltammetry and galvanostatic charge/discharge cycling measurements indicated that the electrochemical properties of SnO_x films strongly rely on their crystal sizes as well as surface morphologies. The SnO_x film deposited at sputtering power of 120 W exhibits the best electrochemical performances. It could deliver a reversible capacity of 670 μAh cm⁻² μm⁻¹ at 50 μA cm⁻² in the voltage range of 0.1-1.2 V up to 50 cycles.     

Electrical conductivity and redox stability of La2Mo2−xWxO9 materials

A series of compounds La₂Mo_2−xW_xO₉ (x = 0-2) were synthesized using a freeze-dried precursor method at relatively low temperatures (673-823 K). These materials were characterised by thermogravimetric and differential thermal analysis (TG/DTA), differential scanning calorimetric (DSC), X-ray diffraction (XRD), and transmission electron microscopy (TEM) and dilatometric measurements. Oxygen stoichiometry was evaluated by coulometric titration and thermogravimetric analysis at 873-1273 K. The ionic and electronic conductivities of these materials were analysed by impedance spectroscopy and a Hebb-Wagner ion-blocking method under moderately reducing conditions. The presence of W⁶⁺ leads to an increase of the stability range (about 10⁻¹⁶ Pa for La₂Mo_0.5W_1.5O₉ at 1073 K) and prevents oxygen loss and amorphisation. Within the stability range, the electronic conductivity increases gradually as the temperature increases and as the oxygen partial pressure reduces. This indicates that the electronic transport is mainly n-type as a result of the oxygen-content decreasing in the molybdate lattice. Further reduction of the oxygen partial pressure gave rise to the decomposition of La₂Mo_2−xW_xO₉, leading to the formation of new phases with molybdenum in lower oxidation states, which further enhances the electronic conductivity. The results of the coulometric titration and the thermogravimetric studies under a dry 5% H₂/Ar flow suggest that tungsten doped lanthanum molybdate materials can be used as electrolyte only at low temperature and under moderate reducing conditions.     

Parallel oxygen and chlorine evolution on Ru1−xNixO2−y nanostructured electrodes

Nanocrystalline materials with chemical composition corresponding to formula Ru_1−xNi_xO_2−y (0.02 < x < 0.30) were prepared by sol-gel approach. Substitution of Ru by Ni has a minor effect on the structural characteristics extractable from X-ray diffraction patterns. The electrocatalytic behavior of Ru_1−xNi_xO_2−y with respect to parallel oxygen (oxygen evolution reaction, OER) and chlorine (chlorine evolution reaction, CER) evolution in acidic media was studied by voltammetry combined with differential electrochemical mass spectrometry (DEMS). The DEMS data indicate a significant decrease of the over-voltage for chlorine evolution with respect to that of pure RuO₂. The oxygen evolution is slightly hindered. The increasing Ni content affects the electrode material activity and selectivity. The overall material's activity increases with increasing Ni content. The activity of the Ru-Ni-O oxides towards Cl₂ evolution shows a distinguished maximum for material containing 10% of Ni. Further increase of Ni content results in suppression of Cl₂ evolution in favor of O₂ evolution. A model reflecting the cation-cation interactions resulting from Ni-doping is proposed to explain the observed trends in electrocatalytic behavior.     

Structural and dielectric properties of Bi1−xSrxMnO3 (0.40≤x≤0.55)

In order to study the effect of Sr substitution on structural and dielectric properties of Bi_1−xSr_xMnO₃ (0.40≤x≤0.55) compounds were synthesized by the solid state reaction method. The as-prepared samples were characterized by X- ray diffraction (XRD) and dielectric measurements to correlate structural changes with dielectric properties. The XRD data were further analyzed by the Rietveld refinement. The highest dielectric constant was observed in Bi_0.55Sr_0.45MnO₃ and Bi_0.5Sr_0.5MnO₃ systems (∼10⁶) mainly because of orientation polarization. The charge ordering temperature decreases with increasing Sr concentration in Bi_1−xSr_xMnO₃ systems.     

Amorphous LiCoO2 thin films on Li1+x+yAlxTi2−xSiyP3−yO12 prepared by radio frequency magnetron sputtering for all-solid-state Li-ion batteries

Amorphous LiCoO₂ thin films were deposited on the NASICON-type glass ceramics, Li_1+x+yAl_xTi_2−xSi_yP_3−yO₁₂ (LATSP), by radio frequency (RF) magnetron sputtering below 180 °C. The as-deposited LiCoO₂ thin films were characterized by X-ray diffraction, scanning electron microscopy and atomic force microscope. All-solid-state Li/PEO₁₈-Li (CF₃SO₂)₂N/LATSP/LiCoO₂/Au cells were fabricated using the amorphous film. The electrochemical performance of the cells was investigated by galvanostatic cycling, cyclic voltammetry, potentiostatic intermittent titration technique and electrochemical impedance spectroscopy. It was found that the amorphous LiCoO₂ thin film shows a promising electrochemical performance, making it a potential application in microbatteries for microelectronic devices.     

Preparation and microstructural characterization of (Nd1−xGdx)2(Ce1−xZrx)2O7 solid solutions

(Nd_1−xGd_x)₂(Ce_1−xZr_x)₂O₇ (0 ≤ x ≤ 1.0) powders with an average particle size of 100 nm were synthesized with chemical-coprecipitation and calcination method, and were characterized by X-ray diffractometry and scanning electron microscopy. The sintering behaviour of (Nd_1−xGd_x)₂(Ce_1−xZr_x)₂O₇ powders was studied by pressureless sintering at 1600–1700 °C for 10 h in air. The relative densities of (Nd_1−xGd_x)₂(Ce_1−xZr_x)₂O₇ solid solutions increase with increasing the sintering temperature, and gradually decrease with increasing the content of neodymium and cerium at identical temperature levels. (Nd_1−xGd_x)₂(Ce_1−xZr_x)₂O₇ solid solutions have a single phase of defect fluorite-type structure among all the composition combinations studied. The lattice parameters of (Nd_1−xGd_x)₂(Ce_1−xZr_x)₂O₇ solid solutions agree well with the Vegard's rule.     

Effect of potential on bismuth telluride thin film growth by electrochemical atomic layer epitaxy

In the present study, bismuth telluride compound thin film was grown by means of electrochemical atomic layer epitaxy (ECALE) with an automated thin layer flow cell deposition system. The dependence of the Bi and Te deposition potentials on Pt electrode was studied. Because developing a contact potential between the substrate and the growing semiconductor, the deposition potential adjustment is necessary for the first 30 or more cycles of each component. The dependence of the deposit as a function of the deposition potential adjustment slope has been investigated. The results show that an excess elemental Bi existed at a slope of −2 mV/p (p indicates per cycle), indicating that this is a lack of deposition at the potential. Single-phase Bi₂Te₃ compound could be obtained between −4 and −6 mV/p. Bi₂Te₃ and Bi₄Te₃ coexistence is observed at a slope of −10 mV/p. The EDS data indicates that the stoichiometry of compound is consistent with XRD result. SEM studies show that the deposits are inhomogeneous and have an micron sized particles morphology.     

Electrodeposition of bismuth telluride films from a nonaqueous solvent

The author examines Bi₂Te₃ deposition from a DMSO solution containing TeCl₄ and Bi(NO₃)₃ × 5H₂O by means of cyclic voltammetry and electrochemical quartz crystal microbalance (EQCM). Accumulated charges and related mass changes for Bi₂Te₃ deposition on working electrodes are measured in situ. The deposit composition is more dependent on Te⁴⁺ concentrations in DMSO solution than on the potential. In a DMSO solution containing 0.01 M Te⁴⁺ and 0.0075 M Bi³⁺, Bi₂Te₃ deposits were obtained in the potential range between −0.2 and −0.8 V vs. Ag/AgCl. In a DMSO solution containing 0.05 M Te⁴⁺ and 0.0375 M Bi³⁺, Te-rich deposits were formed from −0.2 to −0.8 V vs. Ag/AgCl.