The influence of neutron and gamma irradiation in bubble garnet films

The behaviour of garnet films, containing 3 micronsbubbles, exposed to neutron irradiation and gamma rays is reported. The implanted and non implanted (YSmLuCa)3(FeGe)5O12epitaxial garnet films were irradiated with fast neutrons (10¹⁵n/cm²) and 10⁸rad (Si) gamma rays with 1 MeV energy. In these harsh conditions, the variations of physical characteristic parameters were analysed. In ion implanted films, the coercive field increased from 0.3 to 0.4 oe after neutron irradiation. The gamma rays irradiation brought the strip width back to the value it had before the ion implant. The anisotropy field increased slightly (3%) under both irradiations. The decrease in operating margins of 64 K bit memory chips is presented and a good correlation is made with the previous results. These effects are explained by general phenomena describing the interaction between the irradiation and the material. These experiments show that bubble memories will only fail at a high level of neutron and gamma ray exposure.     

沉积时间对聚醚醚酮表面类金刚石薄膜的结构和性能的影响

采用直流磁控溅射技术在聚醚醚酮(PEEK)表面制备不同厚度的类金刚石(DLC)薄膜,研究了沉积时间对其表/界面结构、组分、疏水、力学和光透过性能的影响。结果表明,在平均沉积速率为5.71 nm/min的条件下,随着沉积时间的延长DLC薄膜的厚度线性增大、碳原子的致密性提高、界面互锁结构增强,而界面结合强度逐渐降低。沉积时间≤15 min时,基体结构的影响使拟合计算出的I_D/I_G值为0.23~0.25和sp²/sp³比值较小(0.58~0.74);沉积时间>15 min时基体的影响较小,I_D/I_G值突增大至0.81,sp²/sp³值也比较大(0.96~1.12)。沉积时间的延长使PEEK基体的温度逐渐升高,使膜内的sp²/sp³值逐渐增大。薄膜表面的氧含量先降低然后趋于平缓,部分C=O转化为C-O。随着沉积时间的延长,PEEK/DLC复合薄膜的硬度、弹性模量及防紫外线和阻隔红外线性能都逐渐提高,其表面粗糙度和疏水性的变化趋势是先提高后降低。沉积时间为32 min的薄膜,其表面粗糙度和水接触角达到最大值,分别为495 nm和108.29°。     

仿生构筑超薄MXene/CNC电磁屏蔽复合薄膜

高强电磁屏蔽薄膜材料在柔性器件、汽车电子和航空航天等领域具有广泛应用前景, 受珍珠母微纳米结构及其优异机械性能的启发, 利用简单的溶液共混及真空抽滤方法, 将纤维素纳米晶(CNC)和MXene混合, 经层层组装制备了高性能MXene基复合薄膜。结果表明: 薄膜的机械性能有了显著提高, 拉伸强度从18 MPa提高到57 MPa, 韧性从70 kJ/m ³提高到313 kJ/m ³, 同时保留了复合薄膜的高电导率(10 ⁴ S/m)和优异的电磁屏蔽性能, 厚度8 μm时可达40 dB以上。     

甘氨酸辅助合成BiOI及其模拟太阳光光催化性能研究

以甘氨酸分子作为模板, 硝酸铋作为铋源, 采用水热合成的方法一步制备了尺寸均一的具有片层花状微球形貌的四方晶相BiOI光催化材料。通过X射线粉末衍射(XRD)、扫描电子显微镜(SEM)、紫外-可见漫反射光谱(UV-Vis/DRS)、N₂吸附-脱附等手段考察了五水硝酸铋与甘氨酸的摩尔比、水热反应时间对BiOI材料形貌、晶相结构及光学吸收等物理化学性质的影响。进一步以罗丹明B和水杨酸为目标污染物对其模拟太阳光光催化性能进行了评价。实验结果显示, 当五水硝酸铋与甘氨酸的摩尔比为1: 2, 水热时间为12 h所合成的BiOI光催化降解活性最高。经40 min模拟太阳光照射后, 罗丹明B和水杨酸的反应速率常数分别达到0.0232和0.0223 min^-1, 与未添加甘氨酸同等条件下合成的BiOI的反应速率常数(0.0111和0.0143 min^-1)相比, 有显著提升。光催化活性提高的主要原因是甘氨酸辅助合成的BiOI材料具有更为规则的形貌和更大的比表面积。     

IN-REACTOR LOW-CYCLE FATIGUE OF TYPE 0Kh16N15M3B STAINLESS STEEL

An investigation has been carried out on austenitic stainless steel 0Kh16N15M3B under normal conditions and also to neutron irradiation of 6.8 × 10¹⁶nm^-2s^-1 ( E > 0.1 MeV) intensity. Thin-walled torsion cylindrical specimens were tested in strain-controlled fully reversed loading mode at 923 K. Various ranges of strain, pre-loading fluences and half-cycle hold times (1, 5 and 30min) were applied. Neutron irradiation was found to result in hardening of the steel, stimulating cyclic stress relaxation and a reduction in cyclic life. When acting together, neutron irradiation and static loads cause a more significant reduction in the number of cycles to failure than if summed up as independent factors. Application of a kinetic failure criterion based on a damage parameter enables an estimation to be made of the limiting state of the steel under high-temperature cyclic loading with hold periods.     

微米六方BN-KH550/聚丁二酸丁二醇酯耐热性复合膜的制备及性能

为进一步改善聚丁二酸丁二醇酯(PBS)的力学性能和耐热性能,采用硅烷偶联剂KH550改性微米六方氮化硼(h-BN),对PBS进行共混改性,通过熔融共混与开炼压延工艺制备了具有较高耐热性的h-BN-KH550/PBS复合膜。对h-BN-KH550粒子结构和复合膜的力学性能、聚集态结构、断面形貌、结晶性能及热稳定性进行了测试和表征。结果表明:与PBS相比,h-BN-KH550/PBS复合膜的力学性能得到改善,当KH550与h-BN质量比为2∶50、h-BN-KH550与PBS质量比为3∶50时,综合力学性能最优;h-BN-KH550粒子可在PBS中均匀分散;在PBS结晶过程中,h-BN-KH550作为成核剂,使PBS的结晶速率加快,结晶度增大;h-BN-KH550/PBS复合膜的热稳定性显著提高,当h-BN-KH550与PBS质量比为3∶50时,复合膜热分解过程中质量损失为5%、10%、50%时的温度(T5d、T10d、T50d)和热分解峰值温度(Tp)分别提高了30.0、22.6、9.5和10.0℃。     

Sc2W3O12薄膜制备及其负热膨胀性能

采用脉冲激光沉积法制备了斜方相Sc₂W₃O₁₂薄膜。利用X射线衍射仪(XRD)和场发射扫描电镜(FESEM)对Sc₂W₃O₁₂靶材和Sc₂W₃O₁₂薄膜组分、表面形貌和靶材断面形貌进行表征, 研究衬底温度与氧分压对薄膜制备的影响。采用变温XRD和热机械分析仪(TMA)分析了Sc₂W₃O₁₂陶瓷靶材和薄膜的负热膨胀特性。实验结果表明: 经1000℃烧结6 h得到结构致密的斜方相Sc₂W₃O₁₂陶瓷靶材, 其在室温到600℃的温度范围内平均热膨胀系数为-5.28×10^-6 K^-1。在室温到500℃衬底温度范围内脉冲激光沉积制备的Sc₂W₃O₁₂薄膜均为非晶态, 随着衬底温度的升高, 薄膜表面光滑程度提高; 随着沉积氧压强增大, 表面平整性变差。非晶膜经1000℃退火处理7 min后得到斜方相Sc₂W₃O₁₂多晶薄膜, 在室温到600℃温度区间内, Sc₂W₃O₁₂薄膜的平均热膨胀系数为-7.17×10^-6 K^-1。     

Development and characterization of a mucoadhesive sublingual formulation for pain control: extemporaneous oxycodone films in personalized therapy

Objective: The aim of this work was the development of mucoadhesive sublingual films, prepared using a casting method, for the administration of oxycodone.

Materials and methods: A solvent casting method was employed to prepare the mucoadhesive films. A calibrated pipette was used to deposit single aliquots of different polymeric solutions on a polystyrene plate lid. Among the various tested polymers, hydroxypropylcellulose at low and medium molecular weight (HPC) and pectin at two different degrees of esterification (PC) were chosen for preparing solutions with good casting properties, capable of producing films suitable for mucosal application.

Results and discussion: The obtained films showed excellent drug content uniformity and stability and rapid drug release, which, at 8?min, ranged from 60% to 80%. All films presented satisfactory mucoadhesive and mechanical properties, also confirmed by a test on healthy volunteers, who did not experience irritation or mucosa damages. Pectin films based on pectin at lower degrees of esterification have been further evaluated to study the influence of two different amounts of drug on the physicochemical properties of the formulation. A slight reduction in elasticity has been observed in films containing a higher drug dose; nevertheless, the formulation maintained satisfactory flexibility and resistance to elongation.

Conclusions: HPC and PC sublingual films, obtained by a simple casting method, could be proposed to realize personalized hospital pharmacy preparations on a small scale.     

Controllable formation of Er–Yb codoped Al2O3 films by the non-aqueous sol–gel method

1 mol%Er³⁺–10 mol%Yb³⁺ codoped Al₂O₃ thin films have been prepared on thermally oxidized SiO₂/Si(110) substrates by a dip-coating process in the non-aqueous sol–gel method from the hydrolysis of aluminum isopropoxide [Al(OC₃H₇)₃] under isopropanol environment. Addition of N,N-dimethylformamide (DMF) as a drying control chemical additive (DCCA) into the sol suppresses formation of the cracks in the Er³⁺–Yb³⁺ codoped Al₂O₃ thin films when the rare-earth ion is doped with a high doping concentration. Homogeneous, smooth and crack-free Er³⁺–Yb³⁺ codoped Al₂O₃ thin films form at the conditions by a molar ratio of 1:1 for DMF:Al(OC₃H₇)₃. A strong photoluminescence spectrum with a broadband extending from 1.400 to 1.700 µm centered at 1.533 µm is obtained for the Er³⁺–Yb³⁺ codoped Al₂O₃ thin films, which is unrelated to the addition of DMF. Controllable formation of the Er³⁺–Yb³⁺ codoped Al₂O₃ thin films may be explained by the fact that the DMF assisted the deprotonation process of Al–OH at the surfaces of gel particles, resulting in enhancement of the degree of polymerization of sols and improvement of the mechanical properties of gel thin films.     

A comparative study of low dielectric constant barrier layer, etch stop and hardmask films of hydrogenated amorphous Si-(C, O, N)

New barrier layer, etch stop and hardmask films, including hydrogenated amorphous a-SiC_x:H (SiC), a-SiC_xO_y:H (SiCO), and a-SiC_xN_y:H (SiCN) films with a dielectric constant (k) approximately 4.3, are produced using the plasma-enhanced chemical vapor deposition technique. The chemical and structural nature, and mechanical properties of these films are characterized using X-ray photoelectron spectroscopy, Fourier transform infrared spectroscopy, and nano-indentation. The leakage current density and breakdown electric field are investigated by a mercury probe on a metal-insulator-semiconductor structure. The properties of the studied films indicate that they are potential candidates as barrier layer, etch stop and hardmask films for the advanced interconnect technology. The SiC film shows a high leakage current density (1.3×10⁻⁷ A/cm² at 1.0 MV/cm) and low breakdown field (1.2 MV/cm at 1.0×10⁻⁶ A/cm²). Considering the mechanical and electrical properties requirements of the interconnect process, SiCN might be a good choice, but the N content may result in via poison problem. The low leakage current (1.2×10⁻⁹ A/cm² at 1.0 MV/cm), high breakdown field (3.1 MV/cm at 1.0×10⁻⁶ A/cm²), and relative high hardness (5.7 GPa) of the SiCO film indicates a good candidate as a barrier layer, etch stop, or hardmask.     

Dielectric properties of AlN films prepared by laser-induced chemical vapour deposition

The dielectric properties and electrical conductivity of AlN films deposited by laser-induced chemical vapour deposition (LCVD) are studied for a range of growth conditions. The static dielectric constant is 8.0 ± 0.2 over the frequency range 10²−10⁷ Hz and breakdown electric fields better than 10⁶ V cm⁻¹ are found for all films grown at temperatures above 130°C. The resistivity of the films grown under optimum conditions (substrate temperature above 170°C, NH₃/TMA flow rate ratio greater than 300 and a deposition pressure of 1–2 Torr) is about 10¹⁴ Ω cm and two conduction mechanisms can be identified. At low fields, F < 5 × 10⁵ V cm⁻¹ and conductivity is ohmic with a temperature dependence showing a thermal activation energy of 50–100 meV, compatible with the presumed shallow donor-like states. At high fields, F > 1 × 10⁶ V cm⁻¹, a Poole-Frenkel (field-induced emission) process dominates, with electrons activated from traps at about 0.7–1.2 eV below the conduction band edge. A trap in this depth region is well-known in AlN. At fields between 4 and 7 × 10⁵ V cm⁻¹ both conduction paths contribute significantly. The degradation of properties under non-ideal growth conditions of low temperature or low precursor V/III ratio is described.     

功能氧化石墨烯/热塑性聚氨酯复合材料薄膜的制备及阻隔性能

为了提高热塑性聚氨酯(TPU)的阻隔性能,首先,采用溶液成型的方法在涂膜机上制备了功能氧化石墨烯(IP-GO)/TPU复合材料薄膜。然后,利用FTIR、XPS、XRD、FE-SEM、原子力显微镜和氧气透过仪对IP-GO/TPU复合材料的形貌和性能进行了表征。结果表明:IP-GO层间距相对原始鳞片石墨的增加了0.696nm,片层的厚度为1.2nm左右。IP-GO以褶皱层状的形式均匀分散在TPU基体中,并且包覆在复合材料薄膜断口表面。当IP-GO含量为3wt%时,IP-GO/TPU复合材料薄膜的氧气透过率为84.325cm3/(m2·d·Pa),相比纯TPU薄膜的280.973cm3/(m2·d·Pa)下降了70%,阻隔性能明显提高。研究解决了TPU薄膜阻隔性能不佳的问题,为高阻隔聚合物的制备提供了一种思路和方法。     

PdSe2半导体薄膜的真空硒化法制备研究

PdSe2薄膜主要通过机械剥离法和气相沉积法制得,本研究采用一种简单有效的可在SiO2/Si衬底上制备PdSe2薄膜的方法.通过高真空磁控溅射技术在SiO2/Si衬底上沉积一层Pd金属薄膜,将Pd金属薄膜与Se粉封在高真空的石英管中并在一定的温度下进行硒化,获得PdSe2薄膜.根据截面高分辨透射电镜(HRTEM)照片可...     

Neutron irradiation of Nb3Sn and NbTi multifilamentary composites

NbTi and Nb3Sn multifilamentary composites have been irradiated with fast-neutrons at 60 ± 5°C to fluences of 1.2×10²⁰n/cm²(E > 1 MeV). The NbTi samples show only a moderate reduction of Icas a function of neutron fluence in an applied field of 40 kG. Reductions in Icwere observed for fluences greater than 3 × 10¹⁷n/cm²and saturate at 18% for fluences greater than 3-4 × 10¹⁹n/cm². The Nb3Sn composites showed large neutron radiation induced changes in Tc, Icand Hc2. Reductions in Tcwere observed for fluences greater than 7 × 10¹⁷n/cm². No measurable changes in Ic(40 kG) were observed below 10¹⁸n/cm². Between 2 and 3×10¹⁸n/cm², however, there is an apparent threshold where a very rapid reduction in Ic(40 kG) is initiated. At the threshold the decrease in Tcis 13%. Between the threshold and 1.1 × 10¹⁹n/cm², I2(40 kG) has been reduced to 4% of the unirradiated value. These changes in superconducting properties in NbTi and Nb3Sn are analyzed in terms of the radiation induced defects. The impact of the response to irradiation of both materials on their applications in fusion reactor magnets is discussed.     

An experimental study on the in situ strength of SiC fibre in unidirectional SiC/Al composites

In order to investigate the effect of strain rate and high temperature exposure on the mechanical properties of the fibre in the unidirectional fibre reinforced metal-matrix composite, in situ SiC fibre bundles are extracted from two kinds of SiC/Al composite wires, which are heat-treated at two different temperatures (exposed in the air at 400 and 600 °C for 40 min after composition). Tensile tests for these two fibre bundles are performed at different strain rates (quasi-static test: 0.001 s⁻¹, dynamic test: 200, 700, and 1200 s⁻¹) and the stress–strain curves are obtained. The experimental results show that their mechanical properties are rate-dependent, the modulus E, strength σ_b and unstable strain _b (the strain corresponding to σ_b) all increase with increasing strain rate. Compared with the mechanical properties of the original SiC fibre, those of the two in situ fibres degrade to some extent, the degradation of the in situ fibre extracted from the composite wire exposed at 600 °C (hereafter referred to as in situ fibre 2) is more serious than that of the in situ fibre extracted from the composite wire exposed at 400 °C (hereafter referred to as in situ fibre 1). The mechanism of the degradation is investigated. A bi-modal Weibull statistical constitutive equation is established to describe the stress–strain relationship of the two in situ fibre bundles. The simulated stress–strain curves agree well with the experimental results.     

Eu掺杂KNN陶瓷的制备及可调性发光研究

稀土离子掺杂铁电陶瓷是一类新型光致变色材料, 在光开关、光信息存储等领域具有潜在应用价值。本研究采用水热法制备了(K_0.5 Na_0.5)_1-xEu_xNbO₃(KNN:xEu)前驱体粉体, 随后利用高温烧结得到对应陶瓷样品。在465 nm激发下, 观察到615 nm处有强的红色发光, 对应于Eu ³⁺的 ⁵D₀→ ⁷F₂跃迁。通过紫外光照射, KNN:Eu陶瓷从乳白色变为深灰色。随后经过200 ℃加热10 min, 着色陶瓷又变回到初始颜色, 显示出良好的光致变色行为。紫外照射和反复加热循环可以有效调控该陶瓷的发光强度。且经过多次循环之后, 发光强度没有明显衰减。在紫外光照射下, KNN:0.06Eu陶瓷发光强度的可调比(ΔR_t)高达83.9%, 说明发光具有良好的可调性。进而结合发光中心和色心之间的能量转移, 对KNN:Eu陶瓷的光致变色和发光机理进行了解释。     

Room temperature indium tin oxide by XeCl excimer laser annealing for flexible display

A XeCl excimer laser (λ=308 nm) has been used to anneal Indium Tin Oxide (ITO) films deposited at 25 °C using DC magnetron sputtering. With increasing laser fluence, the film crystallinity was improved while retaining the as-deposited 111 texture. As a result of laser irradiation, the sheet resistance of 100 nm ITO films decreased from 191 Ω/□ (1.91×10⁻³ Ω cm) to 25 Ω/□ (2.5×10⁻⁴ Ω cm), while the optical transmittance in the visible range increased from 70% to more than 85%. Surface roughness and etching properties were also significantly improved following laser annealing.     

水化龄期及光源类型对TiO2水泥砂浆降解罗丹明B性能的影响研究

采用干混法制备了掺TiO₂水泥砂浆,测试了砂浆力学性能,研究了TiO₂掺量、水化龄期、光源类型及光强等因素对罗丹明B降解性能的影响。结果表明,随TiO₂掺量增加,砂浆对罗丹明B的降解率增加,而砂浆强度则呈先增加后降低规律。在相同TiO₂掺量条件下,砂浆对罗丹明B的降解率随水化龄期延长而降低。与水化3 d试件相比,水化28、180 d掺5%TiO₂水泥砂浆对罗丹明B的降解率分别降低7.84%、11.21%。砂浆对罗丹明B的总降解率随光源类型、光强的变化不明显,但其降解速率随紫外线光强的增大而显著提高。在波长(λ=365 nm)、光射时间(60 min)均相同的条件下,与20 W紫外灯相比,200 W紫外灯照射下的掺5%TiO₂水泥砂浆对罗丹明B的降解率提高约80%。与太阳光相比,200 W紫外灯照射60 min砂浆对罗丹明B的降解率为85.54%,仅降低约1.46%。     

TiN/VCN多层膜的力学性能及摩擦磨损性能研究

采用多靶磁控溅射技术, 制备了TiN、VCN单层膜及调制比为1:1的系列调制周期的TiN/VCN多层膜。利用X射线衍射仪、纳米压痕仪、高温摩擦磨损测试仪和扫描电子显微镜研究了各种薄膜的微结构、力学性能及室温和高温摩擦磨损性能。研究表明: TiN/VCN多层膜以δ-NaCl面心立方结构为主; TiN/VCN多层膜的最大硬度值为28.71 GPa, 约为按混合法则计算所得理论硬度值的1.23倍, 并据此分析了TiN/VCN多层膜的致硬机理; TiN/VCN多层膜在室温下摩擦系数与TiN单层膜摩擦系数相近, 但当环境温度为700℃时, 摩擦系数约0.4, 较TiN单层膜(0.52)低。TiN/VCN多层膜室温和高温下的磨损率相比TiN单层膜减小了约3×10^-14 m³/(N·m)。从晶体化学和热测量方法角度讨论了TiN/VCN多层膜的Magnéli相V₂O₅的润滑机制。     

裂解型聚合物的辐射改性机理及方法EI

着重从交联机理和应用的角度来阐述裂解型聚合物交联或保护的可能性。并且提出聚合物分子结构和反应中产生的自由基的相对稳定性对于裂解型聚合物改性的重要影响。通过应用聚合反应机理和统计学机理来论证改性的理论可行性 ,而且总结了近年来对裂解型聚合物裂解改性工作研究的进展状况。