抗辐射电子学研究综述

抗辐射电子学是一门交叉性、综合性的学科,其研究的辐射效应规律、损伤作用机制、加固设计方法、试验测试方法、建模仿真方法等对极端恶劣环境中的电子系统的可靠工作至关重要。对核爆炸中子、γ和X射线,空间和大气高能粒子产生的各种损伤效应(如瞬时剂量率效应、总剂量效应、单粒子效应、位移效应等)的研究现状进行了系统梳理。对辐射之间、辐射和环境应力之间的协同损伤效应(如长期原子迁移对瞬时剂量率感生光电流的影响,中子和γ射线同时辐照与序贯辐照、单因素辐照的损伤差异,质子和X射线、中子辐照的损伤差异,γ射线辐照与环境氢气的协同损伤效应等)的研究进展进行了详细介绍。阐述了国内外在核爆、空间和大气辐射加固研究方面的最新技术进展。总结了国内外在地面实验室对空间、大气或核爆辐射各种效应进行试验模拟和建模仿真的相关能力。最后对21世纪20年代以后抗辐射电子学研究领域潜在的挑战和关键技术进行了展望。     

Radiation effects on microelectronics in space

The basic mechanisms of space radiation effects on microelectronics are reviewed. Topics discussed include the effects of displacement damage and ionizing radiation on devices and circuits, single-event phenomena, dose enhancement, radiation effects on optoelectronic devices and passive components, hardening approaches, and simulation of the space radiation environment. A summary of damage mechanisms that can cause temporary or permanent failure of devices and circuits operating in space is presented     

GaAsMESFET和DHEMT的中子辐射效应研究

本文介绍了ＧａＡｓＭＥＳＦＥＴ和ＨＥＭＴ的中子辐射效应。依据中子辐射损伤机理，分析了器件参数与中子辐射剂量Φ的依从关系，其中，器件参数包括物理参数Ｎ＿Ｄ、Ｎ＿ｓ、Ｖ＿ｓ，μ和电参数Ｉ＿ＤＳ、ｇ＿ｍ、Ｖ＿ｐ、Ｇ等。     

Compensation-circuit to improve radiation-hardness in GaAsdigital-circuits, based on X-ray studies

Earlier results have shown that GaAs devices do not exhibit appreciable degradation up to a radiation dose of nearly 10⁸ rad (GaAs). The results of this work suggest that GaAs devices and circuits are sensitive to radiation exposure at dose levels below 10⁸ rad(GaAs). Degradation was observed in E-MESFET and D-MESFET parameters and in circuit performance for devices which were designed and fabricated in a 1.2 μm GaAs process, when exposed to varying doses of 1.49 keV X-rays in the range 40-65 Mrad (GaAs). The degradation is attributed to the change in the properties of the MESFET channel region, caused by the transport of the atomic hydrogen from the passivation layer to the channel. A compensation circuit, based on the observed behavior of radiation effects on GaAs devices, has been designed to improve the radiation insensitivity of GaAs (E/D) based circuits under SPICE (Simulation Program with IC Emphasis) simulated conditions. Its usefulness is demonstrated through a DCFL inverter circuit up to nearly 10⁸ rad (GaAs) dose level. The results of this work can be used in the design of complex-function radiation-insensitive DCFL based circuits     

Static and dynamic performance degradation of CMOS buffers due to ionizing radiation

It has been known for some time that ionizing radiation has profound effects on integrated circuits. These need to be considered when such devices may be subjected to radiation environments, such as in the space and nuclear industries. As even the space industry is making increased use of commercial off-the-shelf components for cost considerations, it is again becoming more important to characterize the degradation profiles of ICs which have not necessarily been radiation hardened. To that effect, the performance characteristics as functions of total dose have been analyzed for Motorola MC14050B CMOS Hex buffers in order to identify some relevant parameters. This paper presents the static (dc) and dynamic (ac) characteristics of these devices which have been subjected to increasing total doses under different bias conditions.     

星用微电子器件辐射效应及加固途径分析

在介绍卫星天然辐射环境和人工核爆辐射环境的基础上，着重分析应用于卫星电子系统中的微电子器件的辐射效应，包括电离辐射效应、瞬态辐射效应和中子辐射效应，并归纳出各种器件抗辐射加固的主要途径和具体方法。涉及的器件包括：ＣＭＯＳ／体硅电路，ＣＭＯＳ／ＳＯＳ电路，ＧａＡｓＭＥＳＦＥＴ及其电路，电荷耦合器件等。     

Considerations for the development of radiation resistant devices and VLSI circuits

The impact of radiation on Very Large Scale Integration (VLSI) silicon technology is discussed with a focus on Complimentary Metal-Oxide Semiconductor (CMOS). Effects of total dose, transient radiation, single event phenomena, and neutron fluence on devices and circuits are presented. General approaches to mitigating radiation effects are put forth. With proper considerations, VLSI CMOS can be enhanced to achieve several orders-of-magnitude increase in radiation tolerance.     

The design of radiation-hardened ICs for space: a compendium ofapproaches

Several technologies, including bulk and epi CMOS, CMOS/SOI-SOS (silicon-on-insulator-silicon-on-sapphire), CML (current-mode logic), ECL (emitter-coupled logic), analog bipolar (JI, single-poly DI, and SOI) and GaAs E/D (enhancement/depletion) heterojunction MESFET, are discussed. The discussion includes the direct effects of space radiation on microelectronic materials and devices, how these effects are evidenced in circuit and device design parameter variations, the particular effects of most significance to each functional class of circuit, specific techniques for hardening high-speed circuits, design examples for integrated systems, including operational amplifiers and A/D (analog/digital) converters, and the computer simulation of radiation effects on microelectronic ICs     

CMOS有源像素图像传感器的辐照损伤效应

互补金属氧化物半导体(CMOS)有源像素(APS)图像传感器作为光电成像系统的核心器件,被广泛应用在空间辐射或核辐射环境中,辐照损伤是导致其性能退化,甚至功能失效的主要原因之一。阐述了不同辐射粒子或射线辐照损伤诱发CMOS APS图像传感器产生位移效应、总剂量效应和单粒子效应的损伤物理机制。综述和分析了辐照损伤诱发CMOS APS图像传感器暗信号增大、量子效率减小、饱和输出电压减小、噪声增大以及暗信号尖峰和随机电码信号(RTS)产生的实验规律和损伤机理。归纳并提出了CMOS APS图像传感器辐照损伤效应研究亟待解决的问题。     

GaAs 10 bit DAC的抗辐射设计和实验

通过分析砷化镓(GaAs)器件的电离辐射剂量率辐照机理和效应,结合电路结构,描述了砷化镓10 bit数模转换器(DAC)的电离辐射剂量率辐射效应、抗辐射设计和辐照实验。在电路设计上,10 bit DAC由两个5 bit DAC组成,通过芯片内部合成10 bit DAC,有效降低了芯片面积和制造工艺难度;通过分析电路的电离辐射剂量率辐射效应,针对敏感电路进行局部电路的抗辐射设计,提高电路抗辐射能力;结合实验条件和器件引线分布,设计合理的辐照实验方案,开发辐照实验电路板,进行辐照实验,获得科学的实验结果,验证电路的抗辐射能力。实验结果表明该数模转换器能够抗3×1011rad(Si)/s剂量率的瞬时辐照。     

Second-layer polysilicon structures for gate end-around leakage-current compensation in bulk CMOS ICs

CMOS integrated circuits (ICs) operating in space or other radiation environments can suffer from three different reliability problems due to the radiation: total dose effects, dose rate effects, and single event effects. The two most significant total-dose reliability problems are subthreshold, gate, end-around leakage current and threshold voltage shift. This article documents the theory, design, implementation, and testing of new, second-layer polysilicon structures that can compensate for radiation-induced, subthreshold, gate, end-around, leakage current. Second-layer polysilicon is available in many commercial, bulk CMOS processes and is normally used for floating-gate devices, such as EEPROMs and FPLAs, and charge-coupled devices such as CCD focal plan arrays. The use of the described structures in CMOS ICs would allow radiation tolerant ICs to be fabricated with commercial, bulk CMOS processes, greatly reducing manufacturing costs when compared to the cost of fabricating ICs on dedicated, radiation-hardened process lines.     

现代工艺集成电路的总剂量效应及加固技术

随着核技术和空间技术的发展，越来越多的电子设备不可避免地应用于各种辐射环境中。介绍两类重要的辐射环境及现代工艺集成电路总剂量效应的产生机理，详细描述电子空穴对的产生、氧化层陷阱电荷和界面陷阱的特点及对器件或电路的影响，并对现代先进工艺的抗辐射特点及应用前景进行了探讨。指出随着CMOS工艺不断按比例缩小，作为栅介质；HfO2最具应用前景，而Smart—Cut材料则是非常有发展前景的SOI材料，很可能成为今后SOI材料的主流。     

GaN HEMT器件中子辐照效应实验研究

建立了GaN HEMT器件(氮化镓高电子迁移率晶体管)中子原位测试技术和辐照效应实验方法,开展了GaN HEMT器件脉冲反应堆中子辐照效应实验研究,重点研究了电离辐射和位移损伤对器件性能退化的影响,获取了GaN HEMT中子位移损伤效应敏感参数和效应规律.结果表明,阈值电压、栅极泄漏电流以及漏极电流是中子辐照损伤的敏感...     

Making GaAs integrated circuits

Digital gallium arsenide (GaAs) integrated circuits offer prospects for high-performance electronics, particularly for increased speed and radiation hardness. Prototype GaAs devices fabricated in technologies ranging from ion-implanted metal semiconductor field-effect transistors (MESFETs) and junction field-effect transistors (JFETs) to epitaxial heterostructures, such as high-electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs), have demonstrated these advantages. While these GaAs technologies share many common fabrication features, the unique characteristics of each and GaAs materials present significant manufacturing challenges. It is argues that to produce real integrated circuits (ICs) for system applications, the disciplines and rigors of a production environment as well as the innovations of research and development are required     

氮化镓HEMT器件辐射效应综述

在高频、大功率、高温、高压等领域,氮化镓高电子迁移率晶体管(HEMT)器件因其优异的耐辐射性能而被广泛地应用于卫星、太空探测、核反应堆等领域。尽管从理论和一些试验研究中可以得知,氮化镓材料具有良好的耐辐射特性,但在实际应用中,因其制作工艺及结构等因素的影响,氮化镓HEMT器件的耐辐射特性受到了很大的影响和挑战。本文介绍了氮化镓HEMT器件几种辐射效应,并对氮化镓HEMT器件辐射的研究进行了综述。     

Effects of Doping Profile on GaAs, Double-Drift IMPATT Diodes at 33 and 44 GHz Using the Energy-Momentum Transport Model

Experimentally determined doping profiles for double-read GaAs IMPATT diodes operating at 33 and 44 GHz are used as starting points for a computer optimization. A computer simulation including energy and momentum relaxation effects was used to simulate these devices as the lengths of the drift regions and the integrated charge in the doping spikes were varied. The effects of these doping profile variations on diode performance are presented.     

电荷耦合器件辐射效应理论分析与模拟试验方法研究

分析了CCD电离效应和位移损伤机理,建立了一种国产埋沟CCD器件物理模型,实现了CCD信号电荷动态转移过程的数值模拟,计算了1MeV、14MeV中子引起的CCD电荷转移效率的变化规律.建立了线阵CCD辐照效应离线测量系统,实现了CCD辐射敏感参数测试.利用Co-60γ源和反应堆脉冲中子,开展了商用器件总剂量和中子位移损伤效应模拟试验,在不同辐照条件下,给出了暗电流信号、饱和电压信号、电荷转移效率以及像元不均匀性的变化情况.     

Ⅲ/Ⅴ族化合物半导体器件的空间应用可靠性

论述了Ⅲ/Ⅴ半导体器件在空间系统应用中的可靠性和质量鉴定方法。讨论了空间应用中该类器件常见的失效机制、辐射效应以及其它与高可靠性空间应用中相关的可靠性鉴定技术方法。     

微电子器件的抗辐射加固技术

对各类微电子材料的抗辐射特性进行了分析 ,对 Si双极器件和 Si CMOS器件、 Ga As微波功率器件、新兴光电器件—— VCSEL、 LED以及 MEMS的抗辐射加固技术进行了探讨 ,对几种空间单粒子效应 (SEE)进行了研究     

IGBT特性的辐照效应

本文简述了中子辐照对IGBT特性的影响，给出了器件在中子辐射注量高达10（13）n／cm2时的实验结果。实现发现，随着中子注量的增加，开关时间缩短，阀值电压漂移。对于所研究的注量范围，所观察的效应是由于IGBT少子寿命减少造成的，而不是由于有效掺杂浓度变化所致。