Conformity and structure of titanium oxide films grown by atomic layer deposition on silicon substrates

Conformity and phase structure of atomic layer deposited TiO₂ thin films grown on silicon substrates were studied. The films were grown using TiCl₄ and Ti(OC₂H₅)₄ as titanium precursors in the temperature range from 125 to 500 °C. In all cases perfect conformal growth was achieved on patterned substrates with elliptical holes of 7.5 μm depth and aspect ratio of about 1:40. Conformal growth was achieved with process parameters similar to those optimized for the growth on planar wafers. The dominant crystalline phase in the as-grown films was anatase, with some contribution from rutile at relatively higher temperatures. Annealing in the oxygen ambient resulted in (re)crystallization whereas the effect of annealing depended markedly on the precursors used in the deposition process. Compared to films grown from TiCl₄, the films grown from Ti(OC₂H₅)₄ were transformed into rutile in somewhat greater extent, whereas in terms of step coverage the films grown from Ti(OC₂H₅)₄ remained somewhat inferior compared to the films grown from TiCl₄.     

铁电相BiFeO3对多铁复合薄膜CoFe2O4-BiFeO3铁磁性能的影响

为了研究铁电相BiFeO₃对复合薄膜磁性能的影响,在LaNiO₃ (LNO)缓冲层的Si (100)衬底上旋涂制备了含有0、6、9、10层等不同厚度BiFeO₃的层状CoFe₂O₄-BiFeO₃ (CFO-BFO) 多铁复合薄膜。采用XRD、SEM以及TEM对其结构和形貌进行了表征,采用振动样品磁强计测量磁性,研究了不同厚度BFO对复合薄膜磁性的影响。结果表明: CFO和BFO在异质结构薄膜中共存。缓冲层LNO和铁磁相CFO薄膜具有精细微观结构及明显界面。铁电相BFO的厚度对CFO-BFO复合薄膜的磁性能产生了很大影响。在含有不同层数铁电相BFO的复合薄膜中,含有9层BFO复合薄膜的饱和磁化强度最大,达到了230 emu·cm^-3,相比无铁电相BFO的薄膜,饱和磁化强度提高了18.6%。初步讨论认为: 随着铁电相BFO厚度的增加,CFO与BFO之间的应力传导引起了复合薄膜饱和磁化强度的提高。     

Hysteresis and baseline shift in permanent magnet stabilized MR/SALheads

Hysteresis and baseline shift in shielded permanent magnet stabilized MR/SAL playback heads are studied via a 3D micromagnetic simulation. The hysteretic behavior is examined by calculation of playback voltages and uniform field transfer curves. The overlap region between the MR/SAL layers and the permanent magnet is seen to have a strong effect on the stability of the device. The amount of hysteresis is studied versus the width of the overlap region and the off-track position of the head     

La0.7Ca0.3-xSrxMnO3薄膜的电输运特性研究

采用溶胶-凝胶法制备La_0.7Ca_0.3-xSr_xMnO₃(LCSMO)薄膜, 探讨掺杂对结构、磁性能与电输运特性的影响机制。从X射线衍射(XRD)结果来看, 所有薄膜均具有典型钙钛矿结构。LCSMO薄膜的居里温度(T_C)和金属绝缘体转变温度(T_MI)均随Sr掺杂浓度增加而单调增加。总体看来, 当x ≤0.05时, LCSMO薄膜磁阻率类似于窄带系LCMO 系材料, 在T_MI周围较宽的温度区间内存在相分离, 而相分离过程中多相共存的无序状态是该类材料庞磁阻效应的主要来源。对特定温度下的磁阻率随磁场的变化进行分析, 当温度低于T_MI时, 磁阻率随磁场变化出现双梯度, 低磁场时晶界隧穿效应起主导, 该部分效应对磁场特别敏感, 高磁场时磁阻率主要来源于磁场对自旋波动的压制; 当温度接近或高于T_MI时, 晶界隧穿效应逐渐消失, 磁阻率随磁场线性变化, 磁场对自旋波动的压制起主导作用。     

Effect of preparation conditions on properties of atomic layer deposited TiO2 films in Mo–TiO2–Al stacks

TiO₂ films were grown by atomic layer deposition on Mo electrodes in order to elucidate the dominating conductance mechanism and its dependence on the growth chemistry. TiCl₄ and Ti(OC₂H₅)₄ served as titanium precursors, and H₂O or H₂O₂ as oxygen precursors. The films grown at lower temperatures were amorphous. With increasing growth temperatures the crystallization first started in the TiCl₄–H₂O process. The films grown in this process were clearly leakier compared to the films grown from Ti(OC₂H₅)₄ and H₂O and from Ti(OC₂H₅)₄ and H₂O₂. In the Ti(OC₂H₅)₄-based processes, the application of H₂O₂ instead of H₂O resulted in the films with considerably lowered conductivity, although structural differences in these films were insignificant. Space–charge-limited currents were prevailing in all our amorphous Mo–TiO₂–Al packages. Measurements at different temperatures suggested quite high trap densities likely due to the presence of impurities and structural disorder, while the strong differences in conductivity seemed to be due to different densities of gap states.     

Co-based superstructured nitride alloy films: characteristics andapplications for high frequency heads

Co-based superstructured films composed of 25-nm-thick non-nitride and nitride layers were prepared by N₂ reactive RF sputtering. The films have high 4πM_s=13 kG, a high permeability μ=3000, and a high thermal stability of the magnetic properties. Magnetic heads composed of laminated superstructured films insulated with SiO₂ films were developed for high-frequency operations. The heads show excellent recording capability for narrow gap recording with metal tapes and high reproduction characteristics at frequencies over 10 MHz. They achieve an increase of more than 4 dB in normalized output when compared with conventional laminated-type amorphous film heads. The superstructured nitride film heads are expected to be used in next-generation VCRs, which operate with higher density recording and wider frequency bands     

PdSe2半导体薄膜的真空硒化法制备研究

PdSe2薄膜主要通过机械剥离法和气相沉积法制得,本研究采用一种简单有效的可在SiO2/Si衬底上制备PdSe2薄膜的方法.通过高真空磁控溅射技术在SiO2/Si衬底上沉积一层Pd金属薄膜,将Pd金属薄膜与Se粉封在高真空的石英管中并在一定的温度下进行硒化,获得PdSe2薄膜.根据截面高分辨透射电镜(HRTEM)照片可...     

Si3N4/FePd/Si3N4薄膜的晶体结构和磁性能研究

采用磁控溅射的方法制备了Si₃N₄/FePd/Si₃N₄三层膜, 研究了非磁性材料Si₃N₄作为插入层对磁记录FePd薄膜结构与磁性能的影响。结果表明, 热处理后Si₃N₄分布在FePd纳米颗粒之间, 抑制了FePd晶粒的生长, 与纯FePd薄膜相比, Si₃N₄/FePd/Si₃N₄薄膜的颗粒明显得到细化; 通过添加Si₃N₄层, FePd薄膜的晶体学参数c/a从0.960减小到0.946, 表明Si₃N₄可以有效促进FePd薄膜的有序化进程, 同时提升了矫顽力和剩磁比, 分别提高到249 kA/m、0.86; 随着600℃退火时间的进一步延长, 添加Si₃N₄的薄膜磁性没有迅速下降, 在较宽的热处理时间范围内磁性能保持在比较高的水平, 提高了抗热影响的能力。Si₃N₄作为插入层对FePd薄膜的磁性能具有较大的提升作用, 这对磁记录薄膜的发展具有重要意义。     

Comparative study of MR head designs with abutted vs. overlaidpermanent magnet bias

We have developed Soft-Adjacent-Layer (SAL)-biased MR head products with two types of permanent magnet (PM) domain stabilization schemes, namely, abutted and overlaid. Both types of MR heads are capable of achieving recording density of 500 Mb/in² with linear bit densities ranging from 100-118 kbpi. While transfer curves with a transverse sweeping field showed similar behavior for both PM schemes, the overlaid structure has a large hysteresis in its transfer curve under a longitudinal sweeping field while the abutted junction was hysteresis free. Micromagnetic modeling showed that the hysteresis for the overlaid scheme arises from the varying field response of the MR element in the active region, under the leads and under the PM. Magnetic test shows that the abutted MR head with a PM defined TW had a slower rise in sensitivity and had an effectively narrower magnetic track width. On the other hand, the overlaid MR head with an active region defined by the leads with MR under them has a steeper rise in sensitivity, a broadened magnetic read track and side readings     

Characterization of the surface of bio-ceramic thin films

The biocompatibility and corrosion resistance of orthopaedic and dental implants are determined by their material composition and surface microstructural properties such as surface roughness, grain size, etc. Thin films of bio-inert materials such as oxides of Ti, Al, Zr, and bio-active materials such as hydroxy-apatite (Ca₁₀(PO₄)₆(OH)₂), compounds of calcium and phosphorous oxides are more attractive as bio-ceramic films because of their biocompatibility being higher, and toxicity being lower than those of the other materials. In this study, we mainly focused on characterization of the surface of bio-ceramics using atomic force microscopy (AFM). These films having a thickness of about 500 nm, had been processed using ion-beam sputter deposition, and ion-beam-assisted sputter deposition methods. Investigation of the surface of the films by AFM shows that irradiation with oxygen ions in the energy range of 3 keV increases the surface roughness. A detailed study of the grain size and roughness of several experimental cases of TiO₂ thin films showed that the films contained columnar grains with mean size of about 100 × 100 nm² grown in the z direction with a height of a few nanometers.     

金属过渡层类型对非晶碳膜结构性能的影响

采用直流磁控溅射技术制备不同金属过渡层(Cr, Ti, W)的类石墨非晶碳膜(GLC), 研究过渡层类型对非晶碳膜微结构的影响, 并考察其在人工海水中摩擦性能的变化。研究结果表明: Cr/GLC薄膜sp²杂化键含量最高, 沿GLC表面到铬碳界面方向, sp²杂化键含量逐渐增大, Ti过渡层和W过渡层的sp²杂化键含量变化不明显。Cr/GLC薄膜较高的sp²杂化键含量有助于其在摩擦过程中产生可以充当润滑相的石墨化转化摩擦转移膜。在三种涂层中, Cr/GLC薄膜表现出最高的腐蚀电位-0.16 V和最低的腐蚀电流密度4.42×10^-9 A/cm²。因此相较于Ti, W作过渡层的GLC薄膜, Cr/GLC薄膜在海水环境下表现出优异的摩擦学特性。     

强磁靶共溅射法制备具有室温磁电阻特性的Co-TiO2纳米复合薄膜

Co-TiO₂纳米复合薄膜作为一种新型自旋电子材料, 由于具有良好的生物相容性, 近年来受到广泛关注。但在制备过程中, 磁性金属Co处于氧化气氛, 容易部分氧化, 从而影响薄膜的隧道磁电阻性能。为了抑制磁性金属的氧化, 提高金属态含量, 本研究通过强磁靶共溅射法制备了Co-TiO₂纳米复合薄膜。该方法采用的强磁靶头, 磁场强度高、分布均匀, 可以提高溅射粒子的能量和溅射速率, 降低因高能粒子碰撞而发生氧化的概率。因此强磁靶共溅射法能明显抑制金属Co的氧化, 提高纳米复合薄膜的自旋极化率。所制备的Co-TiO₂纳米复合薄膜主要由非晶态的TiO₂基体和分散其中的Co颗粒组成。通过调节金属Co颗粒尺寸和分布状态, 在电学上实现了金属态向绝缘态转变, 在磁学上实现了铁磁性向超顺磁性转变。Co含量为51.3at%时, Co-TiO₂纳米复合薄膜表现为高金属态和高电阻率, 并且实现了高达8.25%的室温隧道磁电阻。强磁靶共溅射法使Co-TiO₂纳米复合薄膜的室温磁电阻性能得到了进一步提高, 这对于磁性金属—氧化物纳米复合薄膜的研究有着重要的意义。     

Magnetic properties of sputtered Co-Ni-Fe-Pd films for thin-filmheads

Magnetic properties of Co-Ni-Fe-M (M=Rh, Ir, Pd, Pt) films prepared by sputtering are investigated. It is found that addition of Pd decreases the magnetostriction constant of the films from 1×10^-5 to around zero. On the other hand, addition of other elements, such as Rh, Ir, and Pt, increases it. However, coercive forces of Co-Ni-Fe-Pd films become more than 10 Oe when the magnetostriction is less than 2×10^-6. Multilayered films are investigated to obtain films with low coercive force. 43Co-27Ni-15Fe-15Pd films of 0.17 μm and Al₂O₃ films of 0.01 μm in thickness are layered time-sequentially. This multilayered film has saturation induction of 1.4 T, ≈0 magnetostriction, and a low coercive force of 1.5 Oe. Furthermore, Co-Ni-Fe-Pd films are ascertained to be as resistant to corrosion as Permalloy films. Recording heads with multilayered Co-Ni-Fe-Pd films with Al₂O₃ interlayers as magnetic cores have been fabricated. Recording characteristics were evaluated. These laminated Co-Ni-Fe-Pd/Al₂O₃ heads exhibit about 6 dB better overwrite than Permalloy heads     

Narrow track MR head technology

Narrow track technologies for shielded MR heads are discussed in terms of off-track performance and increased head output. Permanent magnet bias heads are increasingly superior to exchange coupling bias heads as tracks become narrower, because of the excellent off-track performance of the permanent magnet type. Increasing the sense current is one way to increase head output. However, the current increase raises the temperature of the MR element and degrades performance. An analysis of the thermal behavior of the shielded MR head shows that increasing the thermal conduction of the shield and gap layers, which are the main sources of heat radiation, and improving the crystalline properties of the Ni-Fe film effectively suppress the rise in temperature of the MR element     

RF sputtered PLZT thin film on Pt/Ti electrode

PLZT (7.5/65/35) thin films were deposited by rf magnetron sputtering on single crystal Si substrates using an oxide sintered target with excess PbO. The effects of postannealing and bottom Pt/Ti electrodes on the thin film crystal structures and ferroelectric properties were studied. Film deposited at 200°C or below crystallizes to a perovskite phase after annealing treatment at 550°C or above, and the crystal structure depends on the annealing treatment. The best crystal structures and electronic properties were obtained when the thin films were annealed at 600°C to 650°C for 1 h in O₂. For the Pt/Ti two-layer bottom electrode, the thickness of the Ti layer has a dominant effect. When the Ti layer was too thick or too thin, the PLZT thin film structures consist mainly of pyrochlore phases. However, using an appropriate Ti layer thickness, PLZT thin films having good crystal structures and ferroelectric properties can be obtained, with typical remanent polarization value of 220 mC/m² and coercive field strength of 6.5 MV/m     

Record characteristics of tape heads with CoZr and NiFe poles

Overwrite and recorded signal are compared for tape heads with Co ₉₁Zr₉ and Ni₈₁Fe₁₉ poles as a function of throat height. The effects of throat height variation on performance are discussed for constant current recording with and without pole saturation. The impact of pole saturation on throat height tolerance is also discussed. Co₉₁Zr₉ and Ni₈₁ Fe₁₉ tape heads have equivalent record performance as long as their poles are not saturated. When pole saturation does affect head performance, it has less impact on CoZr heads, and they record and overwrite better than NiFe heads. In a system that requires at least 25-dB 2f/1f overwrite at 2362 fc/mm (60 kFCI), for example, both CoZr and NiFe heads would perform well on oxide tape over a wide range of throat heights. On metal particle tape the overwrite falls below 25 dB at a throat height of 4.4 μm for the CoZr heads and 2.3 μm for the NiFe heads. These throat height limits could be extended with thicker poles or, in the case of NiFe, plated poles that maintain a uniform thickness on sloped areas of the underlying films. Nonetheless, for the conditions described here CoZr heads had nearly twice the throat height tolerance of otherwise identical NiFe heads     

MR head wafer fabrication technology: current and futureperspectives

Areal storage densities and yield requirements continuously drive process optimizations in volume manufacturing of magnetoresistive (MR) heads. Several topics related to the manufacturability of MR heads are discussed. A dependable supply of MR sputter targets with low magnetostriction λ_s is critical. By using an internally developed technique, λ_s can be predicted to within ±1.0×10^-7. MR film thickness uniformity can be improved by 60% by synchronizing the shutter activation with the substrate table. The profile of the photoresist for the read trackwidth definition is affected by initial exposure dose and post expose bake temperature. The use of mass-spectrometric and optical emission endpoint detection methods during ion beam etching of the MR layers allows a precise determination of the stopping point without overmilling into the layer underneath     

Electrical and optical properties of (Pb0.9La0.1)TiO3 films prepared by the sol–gel method with ultrasound application

(Pb_0.9La_0.1)TiO₃ thin films were deposited onto indium tin oxide-coated glass and Pt/Ti/SiO₂/Si substrates by spin coating. One set of the solutions was sonication-treated during the sol preparation, while the other remained untreated for comparison. The results were analyzed in terms of perovskite developments, dielectric constants and losses, polarization behavior, and optical properties. Perovskite formation temperatures became lower by application of the sonication process. Furthermore, dielectric/ferroelectric and optical transmittance properties were improved substantially.     

PLZST陶瓷衬底上La0.7Sr0.3MnO3薄膜生长及其磁性能和电输运特性研究

采用磁控溅射法在PLZST陶瓷衬底上制备了不同厚度的LSMO薄膜, 并对其微结构、磁性能及电输运特性进行了研究。结果表明, LSMO薄膜具有单一钙钛矿结构, 晶粒均匀, 表面平整, 其中20 nm厚LSMO薄膜粗糙度仅为2.93 nm。在10~300 K温度范围内, LSMO薄膜均具有大的磁电阻效应, 20 nm厚的LSMO薄膜磁电阻温度稳定性优异。随着薄膜厚度的增加, 薄膜的居里温度、金属绝缘体转变温度、磁化强度和导电性能降低。这可能是由于Pb、Sn、Zr等离子扩散进入LSMO薄膜中, 导致MnO₆八面体畸变造成的。     

磁性拓扑绝缘体MnBi2Te4（Bi2Te3）n的扫描开尔文探针显微术研究

本征磁性拓扑绝缘体MnBi₂Te₄(Bi₂Te₃)_n由于具有量子反常霍尔效应等新奇物理现象备受关注,该体系材料是由MnBi2Te4(MBT层)和Bi2Te3(BT层)堆叠而成的层状范德华异质结构,因其易于实验剥离,人们对它的研究兴趣由块体材料转向二维薄膜,发现其层厚奇偶性特征与磁性拓扑性质密切相关。目前未有研究表明如何分辨二维极限下材料表面的解理面类型,阻碍了此材料薄膜体系中新奇现象的深入研究。本文利用扫描开尔文探针显微术(SKPM),研究了MnBi₂Te₄(Bi₂Te₃)_n体系解理面的表面电学性质,利用其表面电学性质分辨解理面类型,并进一步探究解理面在大气环境下的稳定性以及材料表面电势对磁性的影响。研究表明,BT层的表面电势高于MBT层,通过SKPM图可分辨MnBi2Te4中解理面类型。MnBi6Te10和MnBi8Te13中不同的BT层表面电势相等,其类型可结合SKPM像和AFM像进行分辨。此外,研究发现此体系材料在大气环境中长时间放置会导致BT层与MBT层的表面电势升高,同时BT层与MBT层间电势差减小。SKPM作为一种分辨解理面类型的手段为深入研究此体系薄层材料的磁性拓扑性质提供了帮助,也为研究其他范德华异质结构的表面电学性质提供了新方法和思路。