有序双钙钛矿Ba2NiMoO6结构和磁性研究

用固相烧结工艺制备Ba2NiMoO6陶瓷样品,采用多晶X射线衍射仪和扫描电子显微镜技术对样品的物相成分、晶体结构和晶体表面形貌进行表征与分析.X射线的实验结果表明:Ba2NiMoO6晶体原胞(a=b=c8.045 nm)属于立方晶系,空间群为Pm3m(No.221),布拉格衍射峰(111)和(311)为样品中Ni离子和Mo离子有序占据B位超晶格有序峰.振动样品磁强计(VSM)测量室温样品磁化强度与磁场强度关系,表明样品在室温下呈现顺磁行为.由电子顺磁共振(ESR)测量样品的室温吸收曲线,可以计算出朗德因子(g=1.3).     

不同制备工艺对多晶双钙钛矿Sr2FeMoO6室温磁电阻效应的影响

研究了固相反应法和溶胶-凝胶自燃法制备多晶Sr2FeMoO6块体样品的室温磁电阻效应,发现溶胶-凝胶自燃法制备的样品与固相反应法相比,室温磁电阻效应由2.9%上升到13.8%,增幅达3.76倍。溶胶-凝胶自燃法制备的前驱粉末为超微粉体,在烧结时能形成优异的晶界质量,需要的烧结温度低,结晶粒度小,晶界数目增多,使磁电阻增强;低的烧结温度易生成SrMoO4,加强绝缘势垒,因此具有好的磁电阻效应。     

稀土氧化物改性的SrTiO_3陶瓷的介电性质

本文主要报道稀土氧化物改性SrTiO_3陶瓷的介电性质。用稀土氧化物掺杂改性SrTiO_3陶瓷,可以提高其介电常数和降低介质损耗,对其介电温度特性和介电频率特性也有明显的改善。     

Ag掺杂对La0.8Ca0.2MnO3电输运性质及磁电阻的影响

用固相反应法制备La1-x(Ca1-yAgy)xMnO3(y=0.0,0.2,0.4,0.6,0.8)系列样品,通过X射线衍射(xRD)谱,电阻率-温度(p-T)曲线,磁电阻-温度(MR-T)曲线,研究了在A位同时掺入一价、二价元素而保持Mn3+/Mn4+比值(摩尔比n(A)/n(B))不变的La1-x(Ca1-yAgy)xMnO3体系A位离子半径＜rA＞及A位离子的无序度σ2对电输运性质及磁电阻的影响.结果表明:所有样品的绝缘体,金属相变温度基本不变,用A位离子半径＜rA＞及A位离子的无序度对电输运性质影响的竞争给予解释;在0.8T磁场下,y=0.0样品在133～26K温区MR基本保持23％以上,y=0.6样品在209 ～ 131 K温跨区MR都在23％以上,在如此宽温区产生如此大的MR有利于MR的实际应用;MR的温度稳定性的机制是本征磁电阻与隧穿磁电阻竞争的结果.     

Y_2O_3改性的SrTiO_3陶瓷的介电性质

SrTiO_3系陶瓷是一种具有多功能特性的介质材料,用Y_2O_3改性SrTiO_3陶瓷,可以提高其介电常数和降低介质损耗,对其介电温度特性和介电频率特性也有明显的改善,本文主要报告Y_2O_3对SrTiO_3陶瓷介电性质的影响。     

双钙钛矿化合物Sr2Mn1-xGaxMoO6（x=0,0.1,0.2,0.3）的晶体结构与磁性

用非磁性Ga3+部分替代Sr2MnMoO6中的Mn2+,获得Sr2Mn1-xGaxMoO6(x=0,0.1,0.2,0.3)多晶样品,通过X射线衍射(XRD)分析和磁性能测量研究Ga3+对晶体结构和磁性的影响。XRD谱Rietveld结构精修分析表明,Sr2Ga1-xMnxMoO6具有四方对称晶体结构(空间群I4/m)。随着Ga含量增加,B/B-原子占位有序度降低,平均键长减小,而平均键长增大,平均键角保持180o不变,平均键角逐渐扩张。5 K及300 K温度下,样品均为反铁磁体,但低掺杂样品在低温(5 K)下表现出微弱的铁磁性。上述结果表明,Ga3+对Mn2+的电子掺杂引起部分Mo离子价态由+6价转变为+5价。     

稀土双掺杂锰氧化物La0.5Dy0.2Sr0.3MnO3的磁性质

采用固相反应法制备了La0.5Dy0.2sr0.3MnO3样品,通过M-T曲线、M-H曲线、ESR曲线研究了样品的磁性质.结果表明:在rc处样品经历了顺磁到铁磁的转变;当r相似文献   

Gd2-xEuxWO6红色荧光粉的溶胶-凝胶合成及其荧光性能分析

利用溶胶-凝胶法制备系列Gd2-xEuxWO6红色荧光粉,XRD测试表明Gd2-xEuxWO6具有单斜晶系结构;在298 nm或395 nm激发下,荧光粉主要发射出对应于Eu3+5的D0→7 F2能级跃迁的612 nm红光;当Gd2-xEuxWO6中Eu3+的掺杂量为50％时,荧光粉612nm红光强度最强;在合成过程中适当添加聚乙二醇(PEG)和柠檬酸能改善荧光粉的红光发射强度.     

Structural and electrical transport properties of a rare earth double perovskite oxide：Ba2ErNbO6

The double perovskite oxide barium erbium niobate,Ba2ErNbO6(BEN) was synthesized by solid state reaction technique.Rietveld refinement of the X-ray diffraction pattern of the sample showed cubic(Fm3m) phase at room temperature.Fourier transform infrared spectrum showed two primary phonon modes of the sample at around 387 and 600 cm–1.Raman spectrum of the sample taken at 488 nm excitation wavelength showed four primary strong peaks at 106,382,747 and 814 cm–1.Lorentzian lines with 10 bands were used to fit the Raman spectrum.A group theoretical study was performed to assign all the Raman modes.Impedance spectroscopy was applied to investigate the ac electrical conductivity of BEN in a temperature range from 303 to 673 K and in a frequency range from 100 Hz – 1 MHz.The dielectric relaxation mechanism was discussed in the frame work of permittivity,conductivity,modulus and impedance formalisms.The complex plane plot of the impedance data was modeled by an equivalent circuit consisting of two serially connected R-CPE units,(one for the grain and the other for the grain boundary),each containing a resistor(R) and a constant phase element(CPE).The R-CPE units were used to incorporate the non-ideal character of the polarization phenomenon instead of an ideal capacitive behaviour.The relaxation time corresponding to dielectric loss was found to obey the Arrhenius law with activation energy of 0.85 eV.The frequency dependent conductivity spectra followed the Jonscher power law.The Cole-Cole model was used to investigate the dielectric relaxation mechanism in the sample.     

纳米Sb2Se3掺杂PZT铁电陶瓷材料的热电性能

采用固相烧结法将Sb2Se3掺杂入PZT铁电陶瓷,以期提升PZT铁电陶瓷的热电性能.对掺杂后的样品材料进行了XRD分析,发现Sb2Se3掺杂融入PZT的效果良好,之后对样品材料的热电性能进行了重点分析.结果表明:随着温度的升高,样品材料的赛贝克系数的绝对值均逐渐增大,且均为负值,掺杂样品的赛贝克系数的绝对值较未掺杂样品...     

Preparation and Electrical Transport Properties of Perovskite Oxide Ln0.5Sr0.5CoO3

The superfine powders of Ln0.5 Sr0.5 CoO3 （Ln = La, Pr, Nd, Sm, Eu） were obtained by solid state reactions. The crystal structure and electrical transport properties of samples doped with different rare earth elements as well as the forming process of the Perovskite structure were studied. The result shows that when the temperature reaches 1200 ℃, the samples will become a steady and unitary Perovskite phase by solid state reactions. The conductive behavor at low temperature is consistent with small polaron mechanism （i. e., localized electronic carriers having a thermally activated mobility）. However, the maximum of conductivity appears at about 700 ℃, and the conductivity of La0.5Sr0.5CoO3 is the biggest in the intermediate-temperature （600 - 850 ℃ ）, so it is fit for cathode material of intermediate-temperature solid oxide fuel cells.     

钙钛矿氧化物La1-x MxCoO3-δ的电输运性能研究

采用固相反应法合成中温固体氧化物燃料电池阴极材料La1-xMxCoO3（M=Ca，Mg，Sr，x=0.2，0.4，0.6），用四探针法测试了样品在不同温度下的直流电导率和不同频率下的交流电导率。结果显示样品的直流电导率随温度的升高而增大，其电输运性能符合小极化子导电机制，具有较高的离子和电子电导率。而交流电导率的测试反映出电导是由晶界导电过程向晶粒导电过程变化的。热重分析测试表明随着温度和掺杂浓度的增加氧空位增加，氧含量减少。     

Al2O3界面钝化与热处理对Gd2O3-HfO2高κ薄膜电性能影响

采用磁控溅射技术在p-Si(100)衬底上生长了Gd2O3掺杂HfO2( GDH)高κ薄膜,制备了GDH/Si和GDH/Al2O3/Si两种堆栈层.结果表明Al2O3界面钝化使漏电流密度降低了两个数量级,并改善了回滞窗口和平带电压的偏移.高温N2退火对堆栈层电学性能影响明显:随着温度的增加,界面性能逐步改善,退火温度为900℃时,回滞窗口小于20 mV,积累区趋势平缓并且单位面积电容值增大,薄膜介电常数为20.     

Electrical characteristics of MOS capacitor using amorphous Gd2O3-doped HfO2 insulator

This work described the electrical characteristics of a kind of amorphous Gd2O3-doped HfO2 insulator for high-k metal-oxide-semiconductor(MOS) capacitors.Compared with pure HfO2,the doped HfO2 with an optimum concentration of Gd2O3 as MOS gate dielectric exhibited a lower leakage current,thinner effective oxide thickness and less fixed oxide charges density.The result indicated that Gd2O3 doping power of 60 W exhibited the best electrical characteristics,maximum capacitance,lowest leakage current of 9.35079...     

Separation of Neighboring REElementsfrom Sm_2O_3Eu_2O_3Gd_2O_3 System by a Stepwise ChlorinationChemical Vapor Transport Reaction

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Structure and Waveguide Properties of Sol-Gel Derived Gd2O3 Films

Pure and rare earth doped gadolinium oxide (Gd2O3) waveguide films were prepared by a simple sol-gel process and dip-coating method. Structure of Gd2O3 films annealed at different temperature was investigated by X-ray diffraction and transmission electron microscopy. Oriented growth of (400) face of Gd2O3 has been observed when the films were deposited on amorphous substrate. The refractive index and thickness of films were determined by m-lines spectroscopy. The laser beam (λ= 632.8 nm) was coupled into the film by a prism coupler and the propagation length is about 3.5 cm. Luminescence properties of europium ions doped films were measured by waveguide fluorescence spectroscopy, which shows disordered environment for Eu^3 at 400℃.     

氧化钆改性铈酸镧热障涂层材料设计 及涂层抗热震性能研究

La2Ce2O7(LC) 由于具有比 YSZ 更低的热导率、 更高的热膨胀系数和良好的高温相稳定性, 是一种极具前 景的热障涂层陶瓷材料。 但该材料热膨胀系数在 200~400℃温度区间存在异常下降现象, 从而引起涂层过早失效 的问题。 目前, 通过掺杂 Gd2O3 可有效解决 LC 低温段热膨胀系数下降的问题, 但是, Gd2O3 改性 La2Ce2O7 热障 涂层最优掺杂浓度及涂层性能还未见报道。 本文采用化学共沉淀法制备了三种不同浓度 Gd2O3 改性 La2Ce2O7 材 料 ((LaxGd1-x)2Ce2O7(x=0,0.1,0.2,0.3)), 研究了掺杂浓度对其热物理性能及相稳定性的影响, 采用等离子喷涂工艺 制备了(La0.8Gd0.2)2Ce2O7 (LGC)涂层, 研究了涂层的抗热震性能和涂层的失效机理。 研究结果表明： (La0.8Gd0.2)2Ce2O7 (LGC) 材料具有较低的热导率, 室温到 1400℃无相变, 并且经 1400℃长时间热处理无相变; 其制备的双陶瓷结 构 LGC/YSZ 热障涂层 1100℃热震次数可达到 109 次, 较未改性 LC/YSZ 热障涂层提升了大约 60%; 两种涂层的 失效模式相似, 均为陶瓷顶层烧结引起的片状剥落失效。     

Magneto-Caloric Effect of Gd5Si2Ge2Compounds under Different Processing Conditions

The magneto-caloric effect of Gd5 Si2Ge2 compounds produced by various techniques is investigated in terms of their magnetization behaviors in the magnetic field from 0 to 2.0 T.The studied materials include arc-melted, annealed and sintered alloys.The results demonstrate that the Gd5Si2Ge2 alloys obtained under different processing conditions possess distinct magneto-caloric effect due to their various microstructures.Proper annealing treatment can enhance the magneto-caloric effect of the alloy remarkably.While the sintered alloy bears relatively lower value of magnetic entropy change ( △ SM) than arc-melted one.The magnetic entropy change of the annealed Gd5 Si2Ge2 alloy arrives the arrives the maximum value of - △SM = 15.29 J· kg-1· K-1 for magnetic field change under 2.0 T in the present work.