以新型先驱体浸渍裂解制备SiC/SiC复合材料弯曲性能研究

以一种新型先驱体LPVCS为原料、KD-1型SiC纤维作为增强相,采用先驱体浸渍裂解工艺(PIP)制备了SiC/SiC复合材料,并对其性能及微观形貌进行表征。实验结果表明,以LPVCS为先驱体、经过热模压辅助成型工艺处理的材料密度为2.11g/cm3,孔隙率为6.25%,而且材料制备周期大大缩短。采用CVD工艺在SiC纤维表面制备裂解碳涂层可有效降低裂解过程中高温对纤维造成的损伤,而且可改善纤维与基体界面的结合,使材料抗弯强度达619.4MPa,断裂韧性达29.1MPa·m1/2,较无涂层的纤维增强复合材料更高。     

纤维涂层处理SiCf/SiC复合材料

分别采用酚醛和沥青为先驱体,在连续SiC纤维表面进行涂层制备,采用SEM、表面能谱等分析手段系统研究了涂层组成、结构及其对SiC纤维力学性能的影响.以含碳涂层的SiC纤维和聚碳硅烷(PCS)为原料通过先驱体转化法(PIP)制备SiCf/SiC复合材料,对其微观结构及性能进行了表征.结果表明,经过涂层处理后,在连续SiC纤维表面涂敷了一层无定形碳,纤维表面缺陷得到改善,抗拉强度有所提高.采用碳涂层SiC纤维制备SiCk/SiC复合材料后,断裂韧性明显提高.通过涂层处理有效地改善了SiCf/SiC复合材料的韧性.     

Cf/SiC复合材料力学性能对比研究

以聚碳硅烷(PCS)为先驱体,T300碳纤维和光威(GW)碳纤维为增强纤维,采用先驱体浸渍-裂解工艺(PIP)分别制备了Cf/SiC复合材料.在相同工艺条件下,所制备GW碳纤维复合材料的力学性能达到了T300纤维复合材料的性能水平,两种纤维增强SiC基复合材料抗弯强度分别为364 MPa和437 MPa.采用扫描电镜观察试样断口形貌及纤维拔出情况,并分析了复合材料的结构和性能差异.     

C芯SiC纤维制备技术研究

在自行设计制造的直流电阻加热CVD装置上制备出C芯SiC纤维,C芯SiC比W芯具有更高的力学性能,更好的界面相容性,更低的密度,成为制备SiC/Ti基复合材料的最佳增强体。研究CH3SiHCl2-CH3SiCl3-H2-Ar体系中在C芯表面化学气相沉积SiC涂层工艺,考察沉积温度,[H2]/[silane],气流量,Ar气流量对化学气相沉积SiC涂层的结构、性能的影响。并对涂层表面形貌及结构成分进行SEM,XRD,raman,AES分析。结果表明:在温度1200℃,[H2]/[silane]=1.4,气体流量4.89L/min,稀释气体0.2L/min时,纤维拉伸强度最好为3392MPa。其中纤维的性能对沉积温度,[H2]/[silane]最敏感。     

SiC/Si-Mo-Cr涂层SiCf/SiC复合材料辐照行为

通过浆料涂刷法(Slurry painting,SP)结合化学气相沉积(Chemical vapor deposition,CVD)，在SiC_f/SiC复合材料表面制备了致密的SiC/Si-Mo-Cr复合涂层。采用拉曼光谱、XRD和SEM研究了Si²⁺离子辐照前后涂层的相组成、结构和形貌，并通过三点弯曲试验评估了辐照前后涂层样品的力学性能。结果表明：SiC_f/SiC复合材料在Si²⁺离子辐照后发生结构损伤，如SiC纤维变得更粗糙，PyC界面膨胀以及SiC基体非晶化；而制备好的涂层可以极大地保护SiC_f/SiC复合材料；因此，内部的纤维、界面和SiC基体在Si²⁺离子辐照中都没有出现损伤。辐照后，SiC_f/SiC复合材料在辐照损伤区的界面脱黏和纤维拔出减少，弯曲断口变平，力学性能下降，弯曲强度保持率为80.49%；与之相比，涂层样品在辐照后的弯曲强度保持率更高，达到84.15%。     

工艺对C/SiC复合材料结构与性能的影响

介绍一种化学气相渗透与先驱体浸渍裂解联用(CVI-PIP)的工艺制备碳毡增强SiC复合材料,采用SEM分析复合材料的显微结构,采用三点弯曲法测试复合材料的力学性能,结果显示在复合材料致密化过程早期,CVI工艺致密化效率明显高于PIP工艺;与完全采用PIP工艺制备C/SiC复合材料相比,采用CVI-PIP工艺可提高复合材料的致密化效率和致密化程度,复合材料残留孔隙率从18.86%下降到5.45%;相应的,C/SiC复合材料的抗弯强度与弹性模量分别从66.43 MPa和38.43 GPa增加到112.16 MPa和68.49 GPa;采用CVI-PIP联用工艺同时能够增加复合材料与其表面CVD涂层的结合性能.     

SiC微粉含量对2D-SiC_f/SiC复合材料力学性能影响

对PIP法制备2D-SiC_f/SiC复合材料成形浆料中惰性填料SiC含量对2D-SiC_f/SiC复合材料孔隙率、纤维体积分数以及力学性能影响进行研究.研究表明,SiC微粉含量较低时,浆料粘度过低,导致层间存在较大气孔,纤维体积分数不高,致使复合材料力学性能不佳,当SiC微粉含量过高时,浆料粘度过大,层间基体厚度增加,纤维体积分数下降,并且浸渍效率降低,孔隙率增大,复合材料力学性能下降.当SiC微粉含量为33.3%时,复合材料具有较低的孔隙率和较高的纤维体积分数,复合材料具有较好的力学性能,弯曲强度和断裂韧性分别达到211.7 MPa和8.56 MPa·m~(1/2).     

Cf／SiC复合材料力学性能对比研究

以聚碳硅烷（PCS）为先驱体，T300碳纤维和光威（GW）碳纤维为增强纤维，采用先驱体浸渍一裂解工艺（PIP）分别制备了Cf／SiC复合材料。在相同工艺条件下，所制备GW碳纤维复合材料的力学性能达到了T300纤维复合材料的性能水平，两种纤维增强SiC基复合材料抗弯强度分别为364MPa和437MPa。采用扫描电镜观察试样断口形貌及纤维拔出情况，并分析了复合材料的结构和性能差异。     

先驱体转化制备2D Cf/SiC复合材料力学性能

以国产3k JC1#纤维布为增强体,以聚碳硅烷和SiC微粉为先驱体和填料,分别采用热压辅助先驱体转化和先驱体浸渍裂解工艺制备了2D Cf/SiC复合材料.结果表明,热压辅助先驱体转化工艺制备的2D C/SiC复合材料纤维损伤严重,基体较为疏松,材料力学性能很低,弯曲强度和断裂韧性仅为84.3 MPa和6.5 MPa·m1/2.而先驱体浸渍裂解工艺制备的2D C-SiC复合材料纤维损伤较小,具有较好的界面结合,内部孔隙较为均匀,力学性能较好,弯曲强度和断裂韧性分别达到321.6 MPa和17.8 MPa·m1/2.材料具有较好的高温力学性能,1300℃时力学性能有较大幅度的提高,1600℃和1800℃时复合材料力学性能还可以较好地保持.     

Joining of C/C Composites and GH3128 Ni-based Superalloy with Ni-Ti Mixed Powder as an Interlayer

通过包埋工艺在C/C复合材料表面制备了改性SiC涂层.采用Ni-Ti粉末作中间层连结材料,利用真空热压扩散工艺成功制备了SiC涂层改性C/C复合材料与GH3128镍基高温合金的连接样件.借助X射线衍射仪、扫描电子显微镜、能谱分析仪和材料万能试验机,研究了SiC涂层改性C/C复合材料与GH3128镍基高温合金连接接头及其界面的元素分布、微观结构及力学性能.结果表明,在C/C复合材料表面制备SiC涂层,不仅充分改善了C/C复合材料对Ni-Ti中间层连结材料的润湿性,而且还有效缓解C/C复合材料与GH3128连接界面因热膨胀不匹配而造成的热应力.经过SiC涂层改性处理的连接接头,其室温剪切强度可达22.49 MPa;而没有经过SiC涂层改性处理的连接接头,其室温剪切强度几乎为零.     

High-Temperature Nanoindentation of SiC/SiC Composites

JOM - The results of high-temperature nanoindentation testing on both a control and a neutron-irradiated silicon carbide matrix silicon carbide fiber composite sample are presented. The mechanical...     

Elevated-temperature effects of oxygen on SiC/SiC composites

High-temperature exposures of SiC/SiC composites to oxidizing environments can lead to substantial changes in mechanical behavior. In the work reported here, results from flexure and crack growth experiments are used to demonstrate such effects. Flexure tests of graphite-coated Nicalon-reinforced SiC previously oxidized in air at 950°C revealed that degradation of fracture resistance began after very short exposure times (less than 1 h) and could be described in terms of distinct oxidation effects on strength and fiber pullout. Crack velocities were determined as a function of applied stress intensity and time for varying O₂ levels. It was observed that crack velocities increased at 1,100°C in the presence of oxygen, which also shifted the onset of stage III (power law) growth to lower values of applied stress intensity. The crack growth observations were described using a two-dimensional micro-mechanical model developed to simulate cracks bridged by continuous fibers. Fiber creep relaxation predicted the correct crack velocity and time-dependence in argon, but other mechanisms, such as interface removal, are required to explain the data in Ar + O₂     

Flexural strength distribution of 3D SiC/SiC composite

Flexural strength of a four-step, three-dimensional (3D) braiding SiC/SiC composite was tested at room temperature. The strength distribution was studied based on Weibull distribution and Normal distribution as well as examined by the Kolmogorov test. The results indicated that the flexural failure behavior of the composite was rather brittle with a small displacement. And the statistical strength distribution of the 3D SiC/SiC composite was in agreement with two-parameter Weibull distribution of the Weibull modulus,m=8.1545 and normal distribution. And the predicated mean flexural strength of the 3D SiC/SiC composite by the two-parameter Weibull distribution was consistent with the tested value.     

Interfacial characterization of a slurry-cast melt-infiltrated SiC/SiC ceramic-matrix composite

An SiC-particulate, silicon-metal melt-infiltration-matrix composite reinforced with SiC fibers is being developed for combustor applications under the High Speed Civil Transport (HSCT) Enabling Propulsion Material (EPM) Program. A major part of this effort has dealt with the characterization and optimization of the boron nitride (BN) based fiber/matrix interface. BN was chosen as the primary interfacial material due to its inherently weak structure and thus good crack-deflecting ability, ease of deposition by chemical vapor infiltration (CVI) into woven fiber preforms, and relatively good environmental stability. Topics discussed in this paper include an overview of the differences in composite microstructure between the EPM SiC/SiC material and a more conventional CVI SiC/SiC composite material, the microstructure/property relationships for the EPM SiC/SiC composite with two different types of SiC fiber (High-Nicalon and Sylramic^™), and the effect of moist, high-temperature environments on the stability of the BN interface.     

Active Oxidation of SiC

Silicon carbide (SiC) forms a protective condensed-phase oxide (SiO₂) in passive oxidation and a volatile sub-oxide (SiO(g)) in active oxidation. The transition between these two modes of oxidation and the rates of active oxidation are critical issues. A literature review indicates that impurity effects, the difference between active-to-passive and passive-to-active transitions, and the effect of total pressure on these transitions remain unexplored for SiC. Measurements were made in a thermogravimetric apparatus (TGA) by changing oxygen potentials either by blending O₂/Ar mixtures or changing total pressures in a pure oxygen gas stream to the point where a transition occurs. Specimens were examined with standard optical and electron-optical techniques. Active-to-passive and passive-to-active transitions were measured and found to be similar for SiC, which is in contrast to pure Si. The similarity in SiC is attributed to SiC/SiO₂ interfacial reactions producing the necessary conditions for passive scale formation (active-to-passive) or passive scale breakdown (passive-to-active). Comparable results were obtained in both the O₂/Ar and reduced total O₂ pressure cases for SiC.     

Preparation and oxidation protection of CVD SiC/a-BC/SiC coatings for 3D C/SiC composites

An amorphous boron carbide (a-BC) coating was prepared by LPCVD process from BCl₃-CH₄-H₂-Ar system. XPS result showed that the boron concentration was 15.0 at.%, and carbon was 82.0 at.%. One third of boron was distributed to a bonding with carbon and 37.0 at.% was dissolved in graphite lattice. A multiple-layered structure of CVD SiC/a-BC/SiC was coated on 3D C/SiC composites. Oxidation tests were conducted at 700, 1000, and 1200 °C in 14 vol.% H₂O/8 vol.% O₂/78 vol.% Ar atmosphere up to 100 h. The 3D C/SiC composites with the modified coating system had a good oxidation resistance. This resulted in the high strength retained ratio of the composites even after the oxidation.     

SiC颗粒增强Al-Fe-V-Si复合材料的SiC/Al界面形貌

采用喷射沉积工艺制备SiCp/Al-Fe-V-Si复合材料,并通过热压和热轧工艺对沉积坯进行致密化;通过高分辨电镜观察其SiC/Al界面形貌,并对比热暴露后的界面形貌。结果表明:复合材料主要存在两种SiC/Al界面,一种是厚度为3nm左右的晶态Si界面层,且在界面附近的基体中生成细小的Al4C3相;另一种是厚度为5nm的非晶态SiO2界面层,部分溶解的SiC颗粒向附近Al基体中注入游离态的Si,在界面附近形成Si的浓度梯度;两种界面都具有良好的润湿性,界面结合强度高;经640℃热暴露10h后,SiC/Al界面处生成的粗大Al4C3脆性相降低界面结合强度,从而降低复合材料的力学性能。     

SiC泡沫陶瓷/SiCp混杂增强Al基复合材料的性能

以SiC泡沫陶瓷和SiC颗粒(7、15、20 μm)为混合增强体,用挤压铸造法制备出SiC泡沫陶瓷/SiCp混杂增强Al基复合材料,研究了SiCp颗粒尺寸对复合材料压缩强度和弯曲性能的影响,以及金属基体的韧性对复合材料压缩行为的影响.结果表明,随着SiC颗粒尺寸的增大,复合材料的压缩强度和弯曲强度降低,最大挠度减小,这是因为随着SiC颗粒尺寸的增大,颗粒间距随之增大,SiC颗粒的强度降低,使SiC颗粒的增强效果减弱.随着基体韧性的提高,复合材料的塑性变形明显增大,但压缩强度和模量降低.     

Effect of SiC particle size on flexural strength of porous self-bonded SiC ceramics

Porous self-bonded silicon carbide (SBSC) ceramics were fabricated from SiC powders with various particle sizes (0.7 μm, 25 μm, 50 μm, 65 μm), plus Si, C and boron (as a sintering additive). The effects of submicron (0.7 μm) SiC particle incorporation into the SBSC and the SiC particle size (25 μm, 50 μm, 65 μm) on the flexural strength and porosity of the ceramics were investigated as a function of sintering temperature. Incorporating 0.7 μm SiC particles into the ceramic material containing 25 μm SiC particles increased the flexural strength by 3 times, from 11.7 MPa up to 35.5 MPa after sintering at 1800 °C. Simultaneously, the porosity was reduced by ∼5 %. Furthermore, the flexural strength of ceramic with 25 μm SiC particles was superior to that with 65 μm SiC particles. Generally, the flexural strength of the SBSC increased as, both, a function of submicron SiC particle incorporation along with relatively small micron-sized particles (25 μm) in the microstructure of the ceramic plus increased sintering temperature.