烧成条件对长余辉蓄光玻璃光学性能的影响

以ＳｒＡｌ_２Ｏ_４：Ｅｕ,Ｄｙ长余辉发光粉体和低熔点硼硅酸盐玻璃为原料,在一定条件下合成了长余辉蓄光玻璃．研究结果表明,烧成温度和保温时间对该玻璃的发光效果影响较大．温度越高,保温时间越长,由于空气的氧化作用,蓄光玻璃的发光效果越差,本试验控制烧成温度在７５０～８００℃间,保温时间在 １０ｍｉｎ以内,能合成性能较好的蓄光玻璃．余辉衰减曲线表明蓄光玻璃的发光性能较之原始发光粉体有所下降．ＳＥＭ分析表明,低温合成的蓄光玻璃中,所含能继续保持发光性质的粉体料,明显比高温合成样要多．     

蓄光型发光材料

长余辉发光材料是一类吸收了激发光能并储存起来 ,光激发停止后再把储存的能量以光的形式慢慢释放出来 ,并可持续几小时甚至十几小时的发光材料。这种吸收光—发光—储存—再发光 ,并可无限重复 ,故称之为蓄光型发光材料。蓄光型发光材料的生产和应用始于 2 0世纪初 ,但此类材料均为具有放射性的硫化物系列 ,有危害人体、污染环境的弊端。 1 992年以肖志国教授为首的大连路明集团发明并研制出添加稀土元素为激活剂的、元放射性的、蓄光性能优于硫化物的铝酸盐体系发光材料 ,余辉时间可达 30多个小时 ,实现了夜间长时间发光的要求 ,使蓄光材…     

稀土发光玻璃的制备与性能研究

利用高温固相合成法在还原气氛中,合成了新型长余辉发光粉CaxSr1-xAl2O4:Eu 2 ,并以硼酸盐体系玻璃B2O3-(Na,K)2O-XO和硅硼酸盐体系玻璃SiO2-B2O3-(Na,K)2O-X2O-XO 的低熔点玻璃作为载体,掺杂该发光粉合成了稀土蓄光发光玻璃.实验改进了合成发光玻璃的热处理方法,提出二阶段的热处理方案,确定了发光玻璃的最佳合成温度分别为820℃和880℃.并根据SEM结果,对两种发光玻璃的表面质量及发光强度进行了对比分析,发现合成的硼硅酸盐发光玻璃的稳定性和发光效果要好于硼酸盐发光玻璃.     

蓄光型自发光材料及制品发展概况

论述了蓄光型自发光材料及制品的发展概况，对第一代和第二代蓄光型自发光材料的发展、典型代表材料及其特点、应用做了详细介绍，同时对蓄光型自发光材料的发展前景进行详细分析。     

发光纤维的研究进展

近年来由于不可再生资源的日益枯竭,以及环境危机等问题,发光材料的研究和利用受到人们的广泛关注.发光纤维作为发光材料的一种,更是有其独特的性能,具有无毒、无害、色泽光鲜亮丽、材质柔和、抗衰老性优良、可持续发光等诸多优点.发光纤维分为荧光纤维和夜光纤维,夜光纤维又分为自发光型和蓄光型.发光纤维实现了自动吸光-蓄光-发光这一...     

废玻璃再生利用制备长余辉蓄光釉面砖及其性能的研究

利用传统陶瓷制备方法合成了SrAl2O4:Eu,Dy长余辉发光粉体,该磷光体主发射波长位于520nm,余辉时间长达20h以上,将发光粉掺入适量的低熔点玻璃料,经780℃烧成30min合成了性能较好的低温发光釉料,以废玻璃,粘土为主要原料添加其它少量助剂,经过成型,预烧,将低发光釉料涂覆在其上,在一定温度下烧成,制得长余辉蓄光釉面砖。     

新型长寿命稀土发光材料及制备技术研制成功

日前,新型长寿命稀土蓄光发光材料及制备技术研制成功。新型高效蓄光型自发光材料及其制品是一种功能型发光新材料,具有高效、节能、环保、以及发光亮     

一维钒氧化物纳米材料的合成、结构及性能

采用流变相-自组装法合成了钒氧化物纳米管和纳米棒,采用XRD、SEM、TEM对产物进行结构表征,同时对其性能进行了测试,研究表明,纳米管具有蓝光发光性能和显著的光限幅性能,VO2(M)纳米棒有良好的电化学性能.     

第三代蓄光型自发光材料

开发新型能源和节约能源已成为当今世界人们的共同需求 ,随着光电技术的日趋成熟 ,许多国家都把研究的重点转向如何实现材料的光—光转换 ,即蓄光 ,然后发光。我国于 2 0世纪 90年代开发成功第三代蓄光型自发光材料。这种材料具有无放射性、无毒等显著优点。其发光机理是一种微观的物理过程 ,由于稀土元素的原子外层电子具有在光照情况下 ,从低能级跃迁到高能级 ,并落入结构电子陷阱 ,从而蓄光 ;而在黑暗中电子又可以从高能级恢复到低能级 ,从而发光。这些色彩缤纷、五颜六色的发光材料 ,白天吸收储存各种可见光 ,如日光、荧光、灯光、紫外…     

长余辉蓄光玻璃的制备及其性能研究

利用传统陶瓷制备方法合成了SrAl2O4:Eu,Dy长余辉发光粉体,该磷光体主发射波长位于520nm,余辉时间长达8h以上。并以硼硅酸盐低熔点玻璃为底材,掺杂该发光粉体,在一定温度下烧成,结果制得长余辉蓄光玻璃。研究还表明,烧成温度对该玻璃的发光性能影响较大,随着温度的升高,发光强度及余辉时间明显下降。     

BaFCl：Eu^2＋,Eu^3＋的光激励发光过程

本文首次报道了ＢａＦＣｌ：Ｅｕ＾２＋,Ｅｕ＾３＋的光激励发光。实验结果发现,在ＢａＦＣｌ：Ｅｕ中Ｅｕ＾３＋对Ｅｕ＾２＋的光激励发光有增强作用。在ＢａＦＣｌ：Ｅｕ的光致发射光谱中同时观察到对Ｅｕ＾２＋、Ｅｕ＾３＋及基质的本征发射,而光激励发射光谱中只观察到Ｅｕ＾２＋的发射,表明光致发光与光激励发光存在着很大的差异。这些结果表明,发光中心Ｅｕ＾２＋、Ｅｕ＾３＋及基质之间存在着相互作用和能量传递。本文提     

Optical properties of eu doped M-Ga2S4 (M: Zn, Ca, Sr) phosphors for white light emitting diodes

Eu2+ doped M-thiogallate (MGa2S4, M: Zn, Ca, Sr) phosphors were prepared by solid-state reaction. The dependence of luminescent properties, photoluminescence and cathodoluminescence, on M2+ ions was investigated. ZnGa2S4: Eu2+, CaGa2S4: Eu2+, and SrGa2S4: Eu2+ exhibited a green emission band at 540 nm, 560 nm, and 535 nm, respectively. The red-shift between CaGa2S4: Eu2+ and SrGa2S4: Eu2+ was originated from the radius difference of Ca2+ and Sr2+ ions. However, it did not apply to ZnGa2S4 : Eu2+ despite of smaller radius of Zn2+ ion. The particle size of ZnGa2S4 : Eu2+ was much smaller than those of the other thiogallates, leading to extremely low CL emission.     

Luminescence of Eu2+ in Barium Octoborat

The luminescences of Eu2+ in low- and high-temperature modified BaB8O13 are reported. The valance change from Eu3+ to Eu2+ is observed when the samples are prepared in air. Eu2+ shows f-d transition at room temperature under UV excitation. The temperature dependency of the emission of Eu2+ in the hosts is studied. Multiple crystallographic sites for Eu2+ in the lattice are observed.     

Thermoluminescence of MgSO4 doped with Eu and P impurities

CaSO4:Eu, MgSO4:Eu and MgSO4:Eu,P phosphors have been prepared and their thermoluminescence (TL) characteristics were studied. A main glow peak due to Eu2+ ions is seen at approximately 146 degrees C and 440 nm and glow peaks at approximately 145 degrees C, approximately 190 degrees C, approximately 260 degrees C and approximately 360 degrees C for 590 nm and 625 nm wavelengths are identified as Eu3+ ion emissions in MgSO4:Eu. Emission spectra in MgSO4:Eu and the MgSO4:Eu,P show that the MgSO4:Eu3+ glow peak at 260 degrees C for 590 nm and 625 nm shifts to 280 degrees C with enhanced intensity while the Eu2+ ion glow peak at 146 degrees C remains but with reduced intensity. The main glow peak at approximately 146 degrees C and 440 nm from Eu2+ ions shows significant difference from the characteristic glow peaks of Eu3+ ions. It is observed that the wavelength of the Eu2+ ion glow peak is inversely proportional to the radius of the cation of the host sulphate in alkaline-earth sulphate phosphors. By contrast the wavelengths of the Eu3+ ion glow peaks remain unchanged in different sulphates. Besides, the glow curve at approximately 146 degrees C obtained using a conventional blue sensitive reader shows simply the first order kinetics. It is concluded that the luminescence centres and distribution of traps related to Eu2+ ions are different from that of Eu3+ ions in MgSO4:Eu and MgSO4:Eu,P phosphors.     

Thermoluminescence in fluorapatite doped with Eu2O3 and PbO

Thermoluminescence (TL) of fluorapatite Ca5(PO4)3F doped with Eu2O3 has been investigated for UV and X ray irradiation. Two TL glow peaks for the Eu2O3 doped sample appeared in the temperature regions about (1) 353 to 380 K and (2) 508 to 510 K, when heated at rate of 20 K.min(-1) after UV or X ray irradiation at room temperature. It has been found that the peak 2 (508 to 510 K) intensity of the samples doubly doped with Eu2O3 and PbO became strong compared with that doped with only Eu or Pb ions. From the TL spectra for the Ca5(PO4)3F doped activators, it is concluded that the TL of Eu2+ ions is sensitised by the existence of Pb2+ ions. On the other hand, the TL of Eu3+ ions is not intensified by addition of PbO. The TL emission may be due to the recombination reaction: Eu3+ + e-->Eu2+*-->Eu2+ + hv. EU2+ + hole --> Eu3+* --> Eu3+ + hv. The 510 K TL peak may be also being suitable for use as a dosemeter.     

Luminescence properties of SnO2 nanoparticles dispersed in Eu3+ doped SiO2 matrix

SnO2 nanoparticles dispersed in Eu3+ doped silica (SnO2-SiO2:Eu3+) were prepared at a low temperature (185 degrees C) in ethylene glycol medium. Transmission electron microscopy studies on as-prepared samples have established that SnO2 nanoparticles having size of 4.6 nm are uniformly covered by the SiO2 matrix. Significant extent of exciton mediated energy transfer between SnO2 and Eu3+ ions in heat treated SnO2-SiO2:Eu3+ samples has been attributed to the diffusion of Eu3+ ions from the SiO2 matrix to the near vicinity of SnO2 nanoparticles and its incorporation in the SnO2 matrix. On the other hand, very weak energy transfer exists for SnO2:Eu3+ nanoparticles heated at different temperatures due to the phase segregation of Eu3+ ions from the matrix.     

Eu2+离子在Sr2Al6O11基磷光体中发光行为的研究

研究了不同Eu掺杂浓度对Sr2Al6O11基磷光体发光性能的影响。结果发现，当Eu掺杂浓度低于0.01mol时，在其发射光谱中存在403和493nm的主发射峰，对应着Sr2Al6O11基质中Sr的两种不同位置Sr1和Sr2位。随着Eu掺杂浓度增加，由于能量传递作用，导致403nm的发射峰消失，493nm的发射峰增强。余辉衰减曲线表明，未掺杂Dy的磷光体没有余辉性能，当Eu掺杂量在0.01mol时，余辉性能最好，进一步提高Eu的掺杂量，由于浓度猝灭作用，导致发光性能下降。     

Eu3+掺杂的硼酸锶系列荧光体的合成及其发光性能

采用溶胶-凝胶法和高温固相反应法合成了Eu^3 掺杂的SrB4O7、SrB2O4、Sr2B2O5、Sr3B2O6荧光体．荧光光谱测试结果表明在不同基质中Eu^3 的荧光发射是有区别的，Sr2B2O5：Eu^3 、Sr3B2O7：Eu^3 发射峰在610nm左右的红光区，SrB2O4：Eu^3 的发射峰在593nm的橙色区，而SrB4O7：Eu^3 则表现出了Eu^2 离子的特征峰，产生这种区别主要是由Eu^3 所处的配位环境不同造成的．荧光体SrB4O7：Eu^3 、SrB2O4：Eu^3 、Sr2B2O5：Eu^3 、Sr3B2O6：Eu^3 的最佳掺杂浓度为2％左右．     

煅烧温度对红色长余辉发光材料Sr_3Al_2O_6:Eu~(2+),Dy~(3+)性能的影响

采用溶胶凝胶法合成了Sr3Al2O6:Eu2+,Dy3+长余辉发光材料,利用X射线衍射仪(XRD)对材料的物相进行了分析,采用荧光分光光度计、照度计测定了样品的发光特性。XRD结果表明:随着煅烧温度的升高,SrCO3杂相的衍射峰越来越弱,Sr3Al2O6相的衍射峰越来越强,1200℃时发光基质为纯的Sr3Al2O6相,1250℃时出现新的SrAl2O4杂相。激发光谱和发射光谱结果表明:长余辉发光材料的激发峰位于473nm,发射峰位于612nm,归属于Eu2+的4f65d1→4f7特征发光。温度升至1250℃时,Eu2+的发射峰为612nm和520nm,后者归属于Eu2+在发光基质SrAl2O4中的发光。综合分析得制备Sr3Al2O6:Eu2+,Dy3+发光材料合适的煅烧温度为1200℃,在此温度下,材料具有较好的初始亮度和余辉时间。     

近紫外白光LED用红色荧光粉In2（MoO4）3:Eu3+,Bi3+的合成及发光性能

通过固相反应法在1000℃空气气氛中合成了In2(MoO4)3:Eu3+、Bi 3+红色荧光粉。粉体分别用X射线衍射(XRD)、荧光分度计测试。结果表明制备的荧光粉具有单相立方晶体结构,该荧光粉能够被近紫外光(395nm)有效激发,发射高强度的612nm红光。Eu3+浓度为40%(摩尔分数)时,In2(MoO4)3:Eu3+发光强度较高。In2(MoO4)3:0.4Eu3+、Bi 3+荧光粉,Bi 3+浓度为3%(摩尔分数)时,发光强度最大,高于没有掺Bi 3+的In2(MoO4)3:0.4Eu3+荧光粉。和CaMoO4:Eu3+相比,In2(MoO4)3:0.4Eu3+、0.03Bi 3+有较高的发光强度。因此,In2(MoO4)3:0.4Eu3+、0.03Bi 3+是一种可能应用于近紫外白光LED的新型红色荧光粉。