Electrical properties of Pb(Mg1/3Nb2/3)O3-PbTiO3 ceramics modified with WO3

Ferroelectrics 0.67Pb (Mg_1/3Nb_2/3)O₃-0.33PbTiO₃ (PMN-PT) + x mol% WO₃ (x=0.1, 0.5, 1, 2) were prepared by columbite precursor method. Electrical properties of WO₃-modified ferroelectrics were investigated. X-ray diffraction (XRD) was used to identify crystal structure, and pyrochlore phase were observed in 0.67Pb (Mg_1/3Nb_2/3)O₃-0.33PbTiO₃+2 mol% WO₃. Dielectric peak temperature decreased with WO₃ doping, indicating that W⁶⁺ incorporated into PMN-PT lattice. Lattice constant, pyrochlore phase and grain size contribute to the variation of K_max. Both piezoelectric constant (d₃₃) and electromechanical coupling factors (k_p) were enhanced by doping 0.1 mol% WO₃, which results from the introduction of “soft” characteristics into PMN-PT, while further WO₃ addition was detrimental. We consider that the two factors, introduction of “soft” characteristics and the formation of pyrochlore phase, appear to act together to cause the variation of piezoelectric properties of 0.67PMN-0.33PT ceramics doping with WO₃.     

Electrical and luminescence properties of Er-doped Bi0.5Na0.5TiO3 ceramics

The influences of Er content on the dielectric and photoluminescence performances of Bi_0.5Na_0.5TiO₃-xEr (x = 0, 0.005, 0.01, 0.015, 0.02, 0.03) ceramics have been investigated. The results show that Bi_0.5Na_0.5TiO₃-xEr ceramics with x = 0.01 Er have maximum values of photoluminescence and piezoelectric properties. A bright green emission at 550 nm and enhanced piezoelectric response are achieved in the ceramic Bi_0.5Na_0.5TiO₃-0.01Er at room temperature. Furthermore, the photoluminescence performance of the ceramics is significantly enhanced by electric poling.     

The synthesis of lead-free ferroelectric Bi0.5Na0.5TiO3-Bi0.5K0.5TiO3 thin films by sol-gel method

(1 − x)Bi_0.5Na_0.5TiO₃-xBi_0.5K_0.5TiO₃ [BNT-BKT-100x] thin films have been successfully deposited on Pt/Ti/SiO₂/Si substrates by a sol-gel process together with rapid thermal annealing. A morphotropic phase boundary (MPB) between Bi_0.5Na_0.5TiO₃ and Bi_0.5K_0.5TiO₃ was determined around x ∼ 0.15. Near the MPB, the film exhibits the largest grain size, the highest ε value (360) and the largest P_r value (13.8 μC/cm²). The BNT-BKT thin film system is expected to be a new and promising candidate for lead-free piezoelectric applications.     

Influence of sintering temperature on piezoelectric properties of (K0.5Na0.5)NbO3-LiNbO3 lead-free piezoelectric ceramics

Lead-free piezoelectric ceramics (1 − x)(K_0.5Na_0.5)NbO₃-xLiNbO₃ have been synthesized by traditional ceramics process without cold-isostatic pressing. The effect of the content of LiNbO₃ and the sintering temperature on the phase structure, the microstructure and piezoelectric properties of (1 − x)(K_0.5Na_0.5)NbO₃-xLiNbO₃ ceramics were investigated. The result shows that the phase structure transforms from the orthorhombic phase to tetragonal phase with the increase of the content of LiNbO₃, and the orthorhombic and tetragonal phase co-exist in (K_0.5Na_0.5)NbO₃-LiNbO₃ ceramics when the content of LiNbO₃ is about 0.06 mol. The sintering temperature of (1 − x)(K_0.5Na_0.5)NbO₃-xLiNbO₃ decreases with the increase of the content of LiNbO₃. The optimum composition for (1 − x)(K_0.5Na_0.5)NbO₃-xLiNbO₃ ceramics is 0.94(K_0.5Na_0.5)NbO₃-0.06LiNbO₃. The optimum sintering temperature of 0.94(K_0.5Na_0.5)NbO₃-0.06LiNbO₃ ceramics is 1080 °C. Piezoelectric properties of 0.94 (K_0.5Na_0.5)NbO₃-0.06LiNbO₃ ceramics under the optimum sintering temperature are piezoelectric constant d₃₃ of 215 pC/N, planar electromechanical coupling factor k_p of 0.41, thickness electromechanical coupling factor k_t of 0.48, the mechanical quality factor Q_m of 80, the dielectric constant of 530 and the Curie temperature T_c = 450 °C, respectively. The results indicate that 0.94(K_0.5Na_0.5)NbO₃-0.06LiNbO₃ piezoelectric ceramics is a promising candidate for lead-free piezoelectric ceramics.     

Structure and electrical properties of (1 − x)Bi0.5Na0.5TiO3-xBi0.5K0.5TiO3 ceramics near morphotropic phase boundary

The binary lead-free piezoelectric ceramics with the composition of (1 − x)Bi_0.5Na_0.5TiO₃-xBi_0.5K_0.5TiO₃ were synthesized by conventional mixed-oxide method. The phase structure transformed from rhombohedral to tetragonal phase in the range of 0.16 ≤ x ≤ 0.20. The grain sizes varied with increasing the Bi_0.5K_0.5TiO₃ content. Electrical properties of ceramics are significantly influenced by the Bi_0.5K_0.5TiO₃ content. Two phase transitions at T_t (the temperature at which the phase transition from rhombohedral to tetragonal occurs) and T_c (the Curie temperature) were observed in all the ceramics. Adding Bi_0.5K_0.5TiO₃ content caused the variations of T_t and T_c. A diffuse character was proved by the linear fitting of the modified Curie-Weiss law. Besides, the ceramics with homogeneous microstructure and excellent electrical properties were obtained at x = 0.18 and sintered at 1170 °C. The piezoelectric constant d₃₃, the electromechanical coupling factor K_p and the dielectric constant ?_r reached 144 pC/N, 0.29 and 893, respectively. The dissipation factor tan δ was 0.037.     

Substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of perovskite-structured Ba(In0.5Ta0.5−xBix)O3 semiconductors

We have investigated the substitution effect of pentavalent bismuth ions on the electronic structure and physicochemical properties of barium indium tantalate. X-ray diffraction, X-ray absorption spectroscopic, and energy dispersive spectroscopic microprobe analyses reveal that, under oxygen atmosphere of 1 atm, pentavalent Bi ions are successfully stabilized in the octahedral site of the perovskite tantalate lattice. According to diffuse reflectance UV-vis spectroscopic analysis, the Bi substitution gives rise to the significant narrowing of band gap of barium indium tantalate even at a low Bi content of ∼5%, underscoring a high efficiency of Bi substitution in the band gap engineering. Such an effective narrowing of the band gap upon the Bi substitution would be attributable to the lowering of conduction band position due to the high electronegativity of Bi^V substituent. As a result of band gap engineering, the Ba(In_0.5Ta_0.5−xBi_x)O₃ compounds with x ≥ 0.03 can generate photocurrents under visible light irradiation (λ > 420 nm). Based on the present experimental findings, it becomes clear that the substitution of highly electronegative p-block element like Bi^V ion can provide a very powerful tool for tailoring the electronic structure and physicochemical properties of wide band gap semiconductors.     

Electrical conduction, dielectric behavior and magnetoelectric effect in (x)BaTiO3 + (1 − x)Ni0.94Co0.01Mn0.05Fe2O4 ME composites

Electrical and magnetoelectric properties of magnetoelectric (ME) composites containing barium titanate as electrical component and a mixed Ni-Co-Mn ferrite as the magnetic component are reported. The ME composites with a general formula (x)BaTiO₃ + (1 − x)Ni_0.94Co_0.01Mn_0.05Fe₂O₄ where x varies as 0, 0.55, 0.70, 0.85 and 1 were prepared by standard double sintering ceramic method. The presence of both the phases was confirmed by X-ray diffraction technique. The dc resistivity was measured as a function of temperature. The variation of dielectric constant (?) and loss tangent (tan δ) with frequency (100 Hz-1 MHz) and with temperature was studied. The conduction is explained on the basis of small polaron model based on ac conductivity measurements. The static value of ME conversion factor i.e. dc (ME)_H was studied as function of intensity of magnetic field. The changes were observed in dielectric properties as well as ME effect as the molar ratio of the components was varied. A maximum value of ME conversion factor of 610 μV/cm Oe was observed in the case of a composite containing 15 mol% ferrite phase.     

Synthesis of (1 − x)Ca2/5Sm2/5TiO3-xLi1/2Nd1/2TiO3 ceramic powder via ethylenediaminetetraacetic acid precursor

(1 − x)Ca_2/5Sm_2/5TiO₃-xLi_1/2Nd_1/2TiO₃ (CSLNT) ceramic powder was prepared by a liquid mixing method using ethylenediaminetetraacetic acid (EDTA) as the chelating agent. TG, DTA, XRD and TEM characterized the precursors and derived oxide powders. When x = 0.3, perovskite CSLNT was synthesized at 1000 °C for 3 h in air. The CSLNT (x = 0.3) ceramics sintered at 1200 °C for 3 h show excellent microwave dielectric properties of ?_r = 99, Q_f = 6200 GHz and τ_f = 9 × 10⁻⁶ °C⁻¹.     

Effects of CuO doping on the electrical properties of 0.98K0.5Na0.5NbO3-0.02BiScO3 lead-free piezoelectric ceramics

CuO-doped 0.98K_0.5Na_0.5NbO₃-0.02BiScO₃ (0.98KNN-0.02BS-xCu) lead-free piezoelectric ceramics have been fabricated by ordinary sintering technique. The effects of CuO doping on the dielectric, piezoelectric, and ferroelectric properties of the ceramics were mainly investigated. X-ray diffraction reveals that the samples at doping levels of x ≤ 0.01 possess a pure tetragonal perovskite structure. The specimen doped with 1 mol% CuO exhibits enhanced electrical properties (d₃₃ ~ 207 pC/N, k_p ~ 0.421, and k_t = 0.424) and relatively high mechanical quality factor (Q_m = 288). These results indicate that the 0.98KNN-0.02BS-0.01Cu ceramic is a promising candidate for lead-free piezoelectric ceramics for applications such as piezoelectric actuators, harmonic oscillator and so on.     

Effect of Pb(Fe1/2Nb1/2)O3 modification on dielectric and piezoelectric properties of Pb(Mg1/3Nb2/3)O3-PbZr0.52Ti0.48O3 ceramics

10 mol% Pb(Fe_1/2Nb_1/2)O₃ (PFN) modified Pb(Mg_1/3Nb_2/3)O₃-PbZr_0.52Ti_0.48O₃ (PMN-PZT) relaxor ferroelectric ceramics with compositions of (0.9 − x)PMN-0.1PFN-xPZT (x = 0.1, 0.2, 0.3, 0.4, 0.5, 0.6, 0.7, 0.8 and 0.9) were prepared. X-ray diffraction investigations indicated that as-prepared ceramics were of pure perovskite phase and the sample with composition of x = 0.8 was close to morphotropic phase boundary (MPB) between rhombohedral and tetragonal phase. Dielectric properties of the as-prepared ceramics were measured, and the Curie temperature (T_c) increased sharply with increasing PZT content and could be higher than 300 °C around morphotropic phase boundary (MPB) area. At 1 kHz, the sample with composition of x = 0.1 had the largest room temperature dielectric constant ?_r = 3519 and maximum dielectric constant ?_m = 20,475 at T_m, while the sample with composition of x = 0.3 possessed the maximum dielectric relaxor factor of γ = 1.94. The largest d₃₃ = 318 pC/N could be obtained from as-prepared ceramics at x = 0.9. The maximum remnant polarization (P_r = 28.3 μC/cm²) was obtained from as-prepared ceramics at x = 0.4.     

Structure and ferroelectric properties in (K0.5Bi0.5)TiO3-BiScO3-PbTiO3 piezoelectric ceramic system

(K_0.5Bi_0.5)TiO₃-BiScO₃-PbTiO₃ ceramics were synthesized by conventional solid-state method. A morphotropic phase boundary (MPB) was confirmed with the aid of structural analysis. Two dielectric anomalous peaks were observed, the one around dielectric maximum temperature (T_m) due to phase transformation from ferroelectric to paraelectric while the second one could be ascribed to space charges. Furthermore, the existence of space charges also resulted in the independence of T_m with frequency at low lead composition. A new high temperature piezoelectric ceramic, 0.30(K_0.5Bi_0.5)TiO₃-0.30BiScO₃-0.40PbTiO₃ close to MPB exhibited excellent electrical properties with T_m of 384 °C, d₃₃ of 247 pC/N, k_p of 38.9%, P_r of 19.41 μC/cm², and E_c of 2.25 kV/mm, indicative of a candidate for high temperature application.     

Investigation of BiFeO3 modified PbTiO3-Bi(MgZr)O3-based complex perovskite ceramics

Bismuth containing crystalline solutions of (1 − x)Bi(MgZr)_0.5O₃-xPbTiO₃ (BMZ-PT) and [(BiFeO₃)_y − (BiMg_0.5Zr_0.5)_1−y]_x − [PbTiO₃]_1−x (BMZ-BF-PT) have been developed using conventional ceramic technology. X-ray diffraction analysis reveals that both the systems possess a perovskite structure, in which tetragonal to rhombohedral phase transformation appears for x = 0.55 in BMZ-PT and y = 0.20 in BMZ-BF-PT systems. SEM photographs reveal a uniform grain size distribution in the solid solution matrix with the presence of ferroelectric domains in few of the compositions. Ferroelectric hysteresis (polarization-electric field, P-E) loops reveal that increase in BiFeO₃ in BMZ-PT systems results in a decrease in residual polarization of the system with change and distortion in the shape of the (P-E) loops.     

Synthesis and high-pressure sintering of (W0.5Al0.5)C

A new solid solution of Al in WC, which can be expressed by the chemical formula (W_0.5Al_0.5)C, has been synthesized directly by reaction milling (RM) of a W_0.5Al_0.5 alloy and the proper amount of carbon. The total reaction time is about 50 h. The ESEM photograph shows that the prepared (W_0.5Al_0.5)C powders are spherical, and the average particle size is about 40 nm. (W_0.5Al_0.5)C has been identified to crystallize in the hexagonal space group P-6m2 (No.187) and belongs to the WC structure type. The lattice parameter of (W_0.5Al_0.5)C is calculated to be a = 2.908(1) Å, c = 2.836(1) Å. This nanocrystalline powder can be well sintered at the high temperature (1600 °C) under the high pressure (4.5 GPa), and the relative density reaches 99.1%. The hardness of the sintered (W_0.5Al_0.5)C is tested to be 1500 ± 50 kg mm⁻², while the density is about 9.417 ± 0.003 g cm⁻³, which is far lower than that of WC.     

Effects of BiAlO3 on structure and electrical properties of K0.5Na0.5NbO3-LiSbO3 lead-free piezoceramics

(1−x)(0.948 K_0.5Na_0.5NbO₃-0.052LiSbO₃)-xBiAlO₃ (KNNLS-xBA) lead-free piezoceramics were synthesized by conventional solid state reaction method. The compositional dependence of phase structure and electrical properties of the ceramics was systemically studied. XRD patterns revealed that all the ceramic samples possessed pure perovskite structure. In addition, polymorphic phase transition (PPT) for the ceramics with BA doping could not be observed in the measuring range from room temperature to 500 °C. Within the studied range of BA addition, the ceramics with x = 0.002 represented a relatively desirable balance between the degradation of the piezoelectric properties, improvement in temperature stability and mechanical quality factor. It was found that the KNNLS-0.002BA ceramics exhibited optimum overall properties (d₃₃ = 233 pC/N, k_p = 35%, tanδ = 0.047, P_r = 27.3 μC/cm², Q_m = 56 and T_c = 349 °C), suggesting that this material should be a promising lead-free piezoelectric candidate for piezoelectric applications.     

Influences of poling condition and sintering temperature on piezoelectric properties of (Na0.5Bi0.5)1 − xBaxTiO3 ceramics

The structure, ferroelectric characteristics and piezoelectric properties of (Na_0.5Bi_0.5)_1 − xBa_xTiO₃ (x = 0.04, 0.06, 0.10) ceramics prepared by conventional solid state method were investigated. The influences of poling condition and sintering temperature on the piezoelectric properties of the ceramics were examined. The piezoelectric properties of the ceramics highly depend on poling field and temperature, while no remarkable effect of poling time on the piezoelectric properties was found in the range of 5-25 min. Compared with (Na_0.5Bi_0.5)_0.96Ba_0.04TiO₃ and (Na_0.5Bi_0.5)_0.90Ba_0.10TiO₃, the piezoelectric properties of (Na_0.5Bi_0.5)_0.94Ba_0.06TiO₃ are more sensitive to poling temperature due to the relatively low depolarization temperature. Moderate increase of sintering temperature improved the poling process and piezoelectric properties due to the development of microstructural densification and crystal structure. With respect to sintering behavior and piezoelectric properties, a sintering temperature range of 1130-1160 °C was ascertained for (Na_0.5Bi_0.5)_0.90Ba_0.10TiO₃.     

Microstructure and microwave dielectric characteristics of (1 − x)Ba(Zn1/3Ta2/3)O3-xBaTi4O9 ceramics

(1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ (0.1 ≤ x ≤ 0.85) composites are prepared by mixing 1150 °C-calcined BaTi₄O₉ with 1150 °C-calcined Ba(Zn_1/3Ta_2/3)O₃ powders. The crystal structure, microwave dielectric properties and sinterabilites of the (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics have been investigated. X-ray diffraction patterns reveal that BaTi₄O₉, ordered and disordered Ba(Zn_1/3Ta_2/3)O₃ phases exist independently over the whole compositional range. The sintering temperatures of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics are about 1240 - 1320 °C and obviously lower than those of Ba(Zn_1/3Ta_2/3)O₃ ceramics. The dielectric constants (?_r) and the temperature coefficient of resonant frequency (τ_f) of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics increase with the increase of BaTi₄O₉ content. Nevertheless, the bulk densities and the quality values (Q × f) of (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramics increase with the increase of Ba(Zn_1/3Ta_2/3)O₃ content. The results are attributed to the higher density and quality value of Ba(Zn_1/3Ta_2/3)O₃ ceramics, the better grain growth, and the densification of sintered specimens added a small BaTi₄O₉ content. The (1 − x)Ba(Zn_1/3Ta_2/3)O₃-xBaTi₄O₉ ceramic with x = 0.1 sintered at 1320 °C exhibits a ?_r value of 31.5, a maximum Q × f value of 68500 GHz and a minimum τ_f value of 4.1 ppm/°C.     

SmAlO3-modified (K0.5Na0.5)0.95Li0.05Sb0.05Nb0.95O3 lead-free ceramics with a wide sintering temperature range

Lead-free ceramics (1 − x)(K_0.5Na_0.5)_0.95Li_0.05Sb_0.05Nb_0.95O₃-xSmAlO₃ (KNLNS-xSA) were prepared by conventional sintering technique. The phase structure, dielectric and piezoelectric properties of the ceramics were investigated. All compositions show a main perovskite structure, exhibiting room-temperature symmetries of tetragonal at x ≤ 0.0075, of pseudo-cubic at x = 0.0100. The Curie temperature of KNLNS-xSA ceramics decreases with increasing SmAlO₃ content. Moreover, the addition of SmAlO₃ can effectively broaden the sintering temperature range of the ceramics. The KNLNS-xSA ceramic with x = 0.0050 has an excellent electrical behavior of piezoelectric coefficient d₃₃ = 226 pC/N, planar mode electromechanical coupling coefficient k_p = 38%, dielectric loss tan δ = 3.0%, mechanical quality factor Q_m = 60, and Curie temperature T_C = 327 °C, suggesting that this material could be a promising lead-free piezoelectric candidate for piezoelectric applications.     

Effect of MgWO4 content on properties of Ba0.5Sr0.5TiO3 composite ceramics for tunable microwave applications

xMgWO₄-(1 − x) Ba_0.5Sr_0.5TiO₃ (x = 0.0, 5.0, 15.0, 25.0 and 35.0 wt%) composite ceramics were prepared via solid state reaction processing. Their structural and dielectric properties were systematically characterized. A significant increase in grain size was observed with increasing MgWO₄ content, which was accompanied by obvious variations in dielectric properties of the composite ceramics. It is found that the permittivity peaks of the samples gradually shifted to low temperatures with increasing MgWO₄ content. At the same time, tunabilities of the composite ceramics decreased, but their Q values increased. The sample with 35 wt% MgWO₄ possesses a high tunability of 16.8% (∼10 kHz), a low permittivity of 65 and an appropriate Q value of 309 (∼4.303 GHz), which meet the requirements of high power and impedance matching, thus making it a promising candidate for applications as electrically tunable microwave devices.     

Synthesis and microwave dielectric properties of CaO-MgO-SiO2 submicron powders doped with Li2O-Bi2O3 by sol-gel method

Using Ca(NO₃)₂·4H₂O, Mg(NO₃)₂·6H₂O, Si(OC₂H₅)₄, LiNO₃ and Bi(NO₃)₃·5H₂O as raw materials, CaO-MgO-SiO₂ submicron powders were prepared at low temperature by sol-gel method. The crystallization temperature was decreased enormously by the introduction of Li-Bi liquid phase sintering aids into Ca-Mg-Si sol, and the powders with average particle sizes of 80-100 nm and 200-400 nm were obtained at the calcining temperature of 750 °C and 800 °C, respectively. The sintering characteristic and dielectric properties of powders calcined at 750 °C with different content of powders calcined at 800 °C were studied. When the content of powders calcined at 800 °C was 10 wt%, the dielectric ceramic sintered at 890 °C had compact structure, and possessed excellent microwave dielectric properties: ?_r = 7.16, Q × f = 25630 GHz, τ_f = −69.26 ppm/°C.     

Enhanced multiferroic properties and tunable magnetic behavior in multiferroic BiFeO3-Bi0.5Na0.5TiO3 solid solutions

A series of multiferroic (1−x)BiFeO₃−x(Bi_0.5Na_0.5)TiO₃ (BF-BNT) (x = 0 − 0.6) solid solution ceramics were prepared by a sol-gel method. The XRD results show that increasing BNT content induce a gradual phase transformation from rhombohedral to pseudocubic structure near x = 0.4. Compared with pure BiFeO₃, superior multiferroic properties are obtained for x = 0.3 with remnant polarization P_r = 1.49 μC/cm² and saturated magnetization M_s = 0.51 emu/g. Importantly, the paramagnetic (PM) to ferromagnetic (FM) transition is observed for the solutions, and the Curie temperature (T_C) can be tuned by varying the content of BNT. This observed FM ordering is discussed in terms of the possible existence of the long-range superexchange interaction of Fe³⁺-O-Ti-O-Fe³⁺ in the chemically ordered regions.