光学参数配置对ArF光刻性能影响研究

针对分辨力100nm的ArF光刻机,在环形照明和四极照明下,对4种曝光图形结构光刻性能进行了仿真研究。仿真结果表明,如果光刻物镜在加工装调后的光波像差为6nm,杂散光为2%,工件台运动标准偏差为8nm,曝光量控制在10%,CD≤±10%CD,利用四级照明,可以在较大的焦深范围内(DOF≥0.4～0.5μm)实现满足器件要求的100nm密集线条、半密集线条的光刻成像。当曝光剂量更精确控制到7%,可以在较大的焦深范围内(DOF≥0.4～0.5μm)实现满足器件要求的100nm孤立线条的光刻成像。     

分辨力增强技术在65 nm浸没式ArF光刻中的应用

首次利用自主研发的光刻辅助设计软件MicroCruiser结合Prolith8.0.2,研究了分辨力增强技术在65nm浸没式ArF光刻中的应用,研究表明,相移掩模结合传统照明可以获得较大的工艺窗口,但是,引起的曝光图形偏移较大。而传统掩模结合离轴照明可以获得较大的工艺窗口,但是,引起的曝光图形偏移较小。因而,通过对单个像差的控制和进行的不同Zernike系数组合,可以大大减少曝光图形的偏移。     

离轴照明强度不对称性对投影曝光光刻系统成像影响分析

本文对离轴照明强度不对称性对投影曝光光刻系统成像影响进行了分析。离轴照明相对传统照明来讲可以提高光刻系统成像的分辨率,是光刻系统常用的照明模式。但是离轴照明光源相对光轴的强度和位置不对称性,会对光刻成像产生较大影响。因此,本文一种利用自建的一种光刻成像仿真模型,利用此模型分析了离轴二极照明下,照明光源强度不对称对193nm深紫外光刻机90nm线宽的成像影响。仿真结果表明,照明光源强度均匀对称时,离焦对成像的影响很小,照明强度不对称时,离焦对成像的影响非常大。因此,光刻时要确保掩膜照明强度均匀,减小离焦对成像线宽的影响。     

侧墙铬衰减型新结构移相掩模的应用

提出了一种全新的移相掩模--侧墙铬衰减型移相掩模(SCAPSM),相对于通常的衰减型移相掩模,其制造工艺仅多两步,却可以较大幅度提高光刻分辨率.采用PROLITH光学光刻模拟软件,参考ArF步进扫描投影光刻机TWINSCAN XT:1400E的曝光参数,对侧墙铬衰减型移相掩模的工艺进行了研究,证明SCAPSM 离轴照明的方案可以将干式193nm光学光刻的分辨率提高到50nm.     

准分子激光线宽对光刻性能的影响

描述了激光线宽对光刻过程的影响模型建立过程中所使用的方法.成像透镜产生的色差结合实际激光光谱可以把激光线宽的影响包括在光刻模拟的模型中,使用PROLITH软件模拟了线宽对空间像的临界尺寸、焦深、曝光宽容度的影响,孤立线和半孤立线条尺寸在240nm到140nm的范围内完成研究.实验结果表明,光刻过程中增加激光线宽使空间成像质量变差,较大的线宽也导致了曝光宽容度的损失.     

侧墙铬衰减型新结构移相掩模的应用

提出了一种全新的移相掩模--侧墙铬衰减型移相掩模(SCAPSM),相对于通常的衰减型移相掩模,其制造工艺仅多两步,却可以较大幅度提高光刻分辨率.采用PROLITH光学光刻模拟软件,参考ArF步进扫描投影光刻机TWINSCAN XT:1400E的曝光参数,对侧墙铬衰减型移相掩模的工艺进行了研究,证明SCAPSM+离轴照明的方案可以将干式193nm光学光刻的分辨率提高到50nm.     

光刻照明系统中新型均匀性补偿器的设计

在超大规模集成电路中,为了满足波长193 nm数值孔径为1.35的45 nm节点紫外光刻曝光光学系统对高分辨率的要求,设计了一种新型的均匀性补偿器件,用于提高照明系统的出射光均匀性从而实现光刻线条的高度均一性。该照明均匀性补偿器的主要功能是实现对照明视场的能量分布进行微调,从而减小系统的残余不均匀性,保证系统在掩膜面及硅片面上的能量分布均匀性达到更高指标的要求。此外,使用CODE V软件对该照明系统的均匀性进行仿真分析,研究发现采用新型均匀性补偿器可以在传统照明和离轴照明模式下同时的光刻照明系统对掩膜面的非均匀性均低于0.5%。与传统匀光单元相比,该新型均匀性补偿器在不增加光刻照明系统机械设计和控制难度的基础上可明显提高光刻照明系统的均匀性,故该器件具有更好的应用价值和实用意义。     

侧墙铬衰减型新结构移相掩模的应用

提出了一种全新的移相掩模--侧墙铬衰减型移相掩模（SCAPSM) ，相对于通常的衰减型移相掩模，其制造工艺仅多两步，却可以较大幅度提高光刻分辨率. 采用PROLITH光学光刻模拟软件，参考ArF步进扫描投影光刻机TWINSCAN XT:1400E的曝光参数，对侧墙铬衰减型移相掩模的工艺进行了研究，证明SCAPSM+离轴照明的方案可以将干式193nm光学光刻的分辨率提高到50nm.     

离轴照明空间成像的偏振光影响研究

在投影光刻中矢量衍射理论适用于研究照明光的偏振态对空间成像的影响。主要研究了在离轴照明方式下照明光的偏振态对线条图形的影响。发现在高数值孔径时光的偏振状态严重影响了离轴照明空间成像，结果表明可以通过控制照明光的偏振态来改善光学系统的分辨率。     

超精细图案光刻技术的研究与发展

根据国内外研究和发展现状，对有望突破100nm超精细图案光刻分辨率的一些关键技术进行了阐述，其中包括曝光技术、掩模技术、光学系统改进和以离轴照明、相位移掩模、多重滤光和图形演算为代表的分辨率增强技术等。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Development of the readout system for waveguide multilayer optical card

Waveguide multilayer optical card （WMOC） is a novel storage device of three-dimensional optical information. An advanced readout system fitting for the WMOC is introduced in this paper. The hardware mainly consists of the light source for reading, WMOC, motorized stages addressing unit, microscope imaging unit, CCD detecting unit and PC controlling ＆ processing unit. The movement of the precision motorized stage is controlled by the computer through Visual Basic （VB） language in software. A control panel is also designed to get the layer address and the page address through which the position of the motorized stages can be changed. The WMOC readout system is easy to manage and the readout result is directly displayed on computer monitor.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Collinear phase-matching study of terahertz-wave generation via difference frequency mixed in GaAs and Inp

The collinearly phase-matching condition of terahertz-wave generation via difference frequency mixed in GaAs and InP is theoretically studied. In collinear phase-matching, the optimum phase-matching wave hands of these two crystals are calculated. The optimum phase-matching wave bands in GaAs and lnP are 0.95-1.38μm and 0.7-0.96μm respectively. The influence of the wavelength choice of the pump wave on the coherent length in THz-wave tuning is also discussed. The influence of the temperature alteration on the phase-matching and the temperature tuning properties in GaAs crystal are calculated and analyzed. It can serve for the following experiments as a theoretical evidence and a reference as well.     

Effects of the alloy compositions on the phonon-polaritons in ternary mixed crystals

Composition dependence of bulk and surface phonon-polaritons in ternary mixed crystals are studied in the framework of the modified random-element-isodisplacement model and the Bom-Huang approximation. The numerical results for Several Ⅱ - Ⅵ and Ⅲ- Ⅴ compound systems are performed, and the polariton frequencies as functions of the compositions for ternary mixed crystals AlxGa1-xAs, GaPxAS1-x, ZnSxSe1-x, GaAsxSb1-x, GaxIn1-xP, and ZnxCd1-xS as examples are given and discussed. The results show that the dependence of the energies of two branches of bulk phonon-polaritons which have phonon-like characteristics, and surface phonon-polaritons on the compositions of ternary mixed crystals are nonlinear and different from those of the corresponding binary systems.     

New insert layer structure OLEDs

An insert layer structure organic electroluminescent device（OLED） based on a new luminescent material （Zn（salen）） is fabricated. The configuration of the device is ITO/CuPc/NPD/Zn（salen）/Liq/LiF/A1/CuPc/NPD/Zn（salen）/Liq/LiF/A1. Effective insert electrode layers comprising LiF（1nm）/Al（5 nm） are used as a single semitransparent mirror, and bilayer cathode LiF（1 nm）/A1（100 nm） is used as a reflecting mirror. The two mirrors form a Fabry-Perot microcavity and two emissive units. The maximum brightness and luminous efficiency reach 674 cd/m^2 and 2.652 cd/A, respectively, which are 2.1 and 3.7 times higher than the conventional device, respectively. The superior brightness and luminous efficiency over conventional single-unit devices are attributed to microcavity effect.