Compensated meter of magnetic induction

Measurement Techniques -     

新一代霍尔效应智能磁强计的研究

智能磁强计是在设计上采用单片机和数字电位器，替代传统的机械电位器的基础上，研发出的一种基于霍尔效应的新型智能化磁场强度测量仪器。从根本上解决机械电位器因接触不良而产生的噪声、漂移等问题。实践证明：该仪器具有测量范围宽，测量精度高，校准常数调节和零点调节实现智能化，换能器更换方便和使用简单等特点，且具有较好的线性度＇其测量误差均在0.5％以内。已取得了较好的经济效益，应用推广前景广阔。     

Improving the accuracy of nutational NMR magnetic induction meter

Translated from Izmeritel'naya Tekhnika, No. 6, pp. 42–43, June, 1988.     

High-precision magnetic field-strength meter

Conclusions The above meter can be used as a reference instrument for checking other magnetic field-strength meters, and can be used as required in metrological and physical investigations for precision measurements of the strength of uniform magnetic fields.The values of the constants for measuring probes given in this article can be recommended for use in computations in magnetic-field measurements by nuclear meters using the resonance of protons, lithium nuclei and deuterons.     

Hall's effect and its application in measurement techniques

Measurement Techniques -     

A magnetic field sensor based on the mechanoelectric effect in semiconductors

A highly sensitive magnetic field transducer based on the mechanoelectric effect in semiconductors is proposed.     

A microwave power meter based on a crystal diode

A thermally stable high-frequency power meter based on a crystal diode is considered. __________ Translated from Izmeritel’naya Tekhnika, No. 9, pp. 56–57, September, 2006.     

工艺因素对电度表用NiFe磁补偿合金性能影响的研究

从工艺因素的角度出发，分别为冷轧加工度与合金磁性能、热处理类型与磁性能、热处理温度与磁性能设计了实验方法，对各实验结果进行了分析和讨论，实验结果较好地指导了合金的研制和生产，为电度表行业的技术进步作出了一些应有的贡献。     

Hall effect magnetic sensors based on polysilicon TFTs

This paper deals with magnetic position sensors compatible with large-area electronics using polycrystalline silicon deposited by a low-pressure chemical reaction technique. The principle of this large-area position sensor is a matrix of thin-film field effect transistors (TFTs) with two additional Hall probes. The performances of the TFT-based cells are linked to the crystalline quality of the active polysilicon layer, which depends on the deposition conditions and on technological processes. Layers are made from two precursor gases, silane or disilane, and two processes. We have compared the sensitivity (absolute or relative) of devices and measured their power consumption. Sensors made from disilane have a sensitivity of 18 mV/T, and the ones made with a monolayer process a sensitivity of 28 mV/T. We propose a simple model, which describes the bias dependency of the sensitivity. The effect of geometry and layer morphology on the offset voltage is also studied.     

基于磁记忆弱漏磁效应的钢绞线腐蚀检测

为明确缺陷对试件表面磁场的影响,该文对30Cr合金钢进行了逐级加载拉伸试验,在试件表面提前人为预制了缺陷,利用TSC-1M-4型磁检测仪采集磁场信号,研究了试件表面磁记忆信号在缺陷处的特征表现。切向磁记忆信号对试件的局部屈服更敏感。对其进行分析的结果表明：试件表面的磁记忆信号在缺陷边界处有明显的变化,通过表面磁场分布可以对试件的应力集中状况进行评价。