磁控溅射技术及其发展

磁控溅射技术可制备超硬膜、耐腐蚀摩擦薄膜、超导薄膜、磁性薄膜、光学薄膜,以及各种具有特殊功能的薄膜,在工业薄膜制备领域的应用非常广泛.本文着重介绍了磁控溅射技术原理、特点、磁控溅射技术的发展史及其发展趋势.     

闭磁场非平衡磁控溅射在光学薄膜中的应用

介绍了一种制备高质量光学薄膜的新型闭磁场磁控溅射技术.该技术具有高束流密度和低内应力,可以在高沉积速率条件下制备性能极佳的精密光学薄膜.采用精密的单轴圆鼓基板系统,可显著提高批量镀膜的能力.     

面向激光防护应用的金刚石/V2O5 膜系设计与制备

针对目前激光对红外光电传感器的威胁,为满足红外传感器在可见光与3~5 m波段高透射,低于3 m波段高反射的使用要求,采用光学金刚石作为红外窗口材料,采用具有热致相变特性的V2O5薄膜作为激光防护涂层,采用ZnS和YbF3作为高低折射率材料,依据膜系设计理论设计具有抗激光致盲能力的红外增透膜并采用TFCalc优化膜系。采用离子辅助法制备增透膜,采用磁控溅射法在实验制备增透膜上制备V2O5涂层。采用扫描探针显微镜对光学薄膜的表面三维形貌及粗糙度进行测试分析,对薄膜进行红外光谱测试分析,结果满足使用设计要求。     

Plasma Parameters in the Reactor with Simultaneous Magnetron Discharge and Inductive Radio-Frequency Discharge in the Presence of External Magnetic Field

A plasma reactor that contains vacuum–arc and magnetron sputtering sources and radio-frequency discharge that generates high-density plasma in the presence of external magnetic field is developed, constructed, and optimized. The reactor can be used for deposition of various functional coatings with ion stimulation. The parameters of the inductive radio-frequency discharge generated in the presence of external magnetic field that serves as a source of assisting ions are optimized. It is shown that the working interval of the induction of external magnetic field corresponds to the resonant excitation of the coupled helicon and Trivelpiece–Gold waves. The effect of magnitude and configuration of magnetic field on the parameters of gas-discharge plasma and ion current in the substrate region is studied in the presence of separately and simultaneously initiated magnetron and inductive discharges. The effect of ion flux that is incident on the films in the course of growth on the structure of functional coatings is analyzed.     

S枪磁控溅射淀积非晶硅光电导薄膜的制备工艺及特性研究

本文介绍用直流磁控S枪在H_2/Ar混合气体中反应溅射单晶硅靶淀积a-Si:H光电导薄膜的制备工艺。研究了用这种技术制备的a-Si:H薄膜的光学特性(透射率光谱、光学常数和光学带隙等)、晶相结构(用电子衍射图谱)、红外吸收光谱和光电导性能。并讨论了制备工艺条件与薄膜微结构和性能的关系。     

用扫描电镜研究CNx/TiN涂层的摩擦磨损

利用一台直流磁控溅射和多弧沉积设备在高速钢(HSS)衬底上沉积CNx／TiN多层复合膜，涂层的硬度超过50GPa。销-盘式摩擦试验研究了涂层的滑动摩擦性能，利用扫描电镜观察并分析了薄膜的磨损模式。结果显示涂层结构致密，附着牢固。涂层的主要磨损形式为粘着磨损、疲劳磨损和磨粒磨损。     

Pulsed DC magnetron sputtering deposition of crystalline photocatalytic titania coatings at elevated process pressures

The use of elevated process pressures is described in the magnetron sputter deposition of titanium dioxide photocatalytic coatings to enable the direct low-temperature formation of the most photoactive titania crystal phase; anatase. Most other works on this subject deal with relatively low ‘conventional’ pressures (0.1–0.5 Pa). However, the present work describes pulsed DC reactive magnetron sputtering deposition of titanium dioxide thin films at process pressures in the range 2–5 Pa in a purpose-built sputtering rig. The influence of the other deposition conditions, such as pulse frequency and duty cycle, is also discussed. Additionally, a series of N-doped titania coatings was produced by using air as the reactive gas. The morphological and compositional properties of the coatings were studied using energy dispersive X-ray spectroscopy (EDX), scanning electron microscopy (SEM), X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS) and atomic force microscopy (AFM). Wettability of the films was studied through measurement of water contact angles under UV light irradiation. Photocatalytic properties of the samples were assessed through the degradation of two model pollutants, methylene blue and stearic acid, under UV light irradiation. The results showed that elevated process pressures (4 Pa and above) allow the direct deposition of anatase titania films, without additional heat treatment, while amorphous titania tends to form at lower process pressures.     

ZnO和ZAO薄膜磁控溅射等离子体发射光谱

采用在线测试等离子体发射光谱的方法,研究了ZnO薄膜和ZAO薄膜磁控溅射生长等离子体的状态,分析了ZAO薄膜生长过程中的工作压强、溅射功率和衬底温度这几个重要参数对等离子体状态影响的规律。结果表明:主要是等离子体中粒子的密度随实验参数发生规律性变化,其变化规律与实验参数对薄膜生长质量影响的规律基本一致,可以定性地解释影响薄膜结晶质量的直接原因。最佳参数为:压强0.2Pa,功率80W和温度450℃。     

The effects of substrate bias,substrate temperature,and pulse frequency on the microstructures of chromium nitride coatings deposited by pulsed direct current reactive magnetron sputtering

Recently, great attention has been devoted to the pulsed direct current (DC) reactive magnetron sputtering technique, due to its ability to reduce arcing and target poisoning, and its capability of producing insulating thin films. In this study, chromium nitride (CrN) coatings were deposited by the bipolar symmetric pulsed DC magnetron reactive sputtering process at different pulse frequency, substrate bias voltage, and the substrate temperature. It was observed that the texture of CrN changed from (111) to (200) as substrate temperature increased to 300°C as deposited at 2 kHz without substrate bias. With increasing pulsing bias and pulse frequency of target, predominated (200) orientation of CrN film was shown due to the ion bombardment/channeling effect to preferentially sputter those unaligned planes. For the CrN coatings deposited with pulsed biasing, the grain size decreased with increasing pulse frequency and substrate bias, whereas the surface roughness showed a reverse trend. The deposition rate of the CrN films decreased with increasing pulse frequency. It was concluded that the pulse frequency, substrate bias, and substrate temperature played important role in the texture, microstructure, and surface roughness of the CrN coatings deposited by the pulsed DC magnetron sputtering process.     

Processing-texture relationships in dual-unbalanced magnetron deposition of TiN films

There has been sustained interest in using TiN and other sputter deposited thin film materials in electronics applications, such as barrier coatings. However, it is difficult to produce “pin-hole free” coatings using conventional magnetron sputtering, since the high bias potentials required to produce dense films often result in substrate damage. “Unbalanced” magnetron sputtering may offer a low energy alternative since the ion-to-deposited-atom ratio can be greatly increased, permitting the ion-bombardment energy to be reduced to <200 eV, without sacrificing film density, hardness, or adhesion. As has been demonstrated previously, ion energy can have a profound effect on film texture, but what affect the “substitution” of ion flux for ion energy will have on film texture has not been determined. In this work, TiN films were deposited onto M2 steel via “unbalanced” magnetron sputtering in an attempt to correlate changes in film texture and film stress, with ion energy and flux.     

High damage threshold HfO2/SiO2 multilayer mirrors deposited by novel remote plasma sputtering

Sputtering deposition coatings offer significant advantages on electron beam (EB) deposition, including high packing density, environmental stability and extremely low losses. But the inherent high compressive stress affects its application in high power laser system. This paper describes the technical feasibility of high damage threshold laser mirrors deposited by a novel remote plasma sputtering technique. This technique is based on generating intensive plasma remotely from the target and then magnetically steering the plasma to the target to realize the full uniform sputtering. The pseudo-independence between target voltage and target current provides us very flexible parameters tuning, especially for the films stress control. Deposition conditions are optimized to yield fully oxidized and low compressive stress single layer HfO2 and SiO2. The high damage threshold of 43.8 J/cm2 for HfO2/ SiO2 laser mirrors at 1064 nm is obtained. For the first time the remote plasma sputtering is successfully applied in depositing laser mirrors with high performance.     

磁控溅射二氧化硅薄膜的制备工艺

研究了在半绝缘ＧａＡｓ衬底上磁控溅射ＳｉＯ＿２薄膜的工艺技术。对影响生长薄膜的因素进行了实验分析，给出了生长速率、腐蚀速率及组分等参数与工艺条件的关系。实验证明，和其它镀膜技术相比，磁控溅射可以在更低的温度下制作致密、均匀、重复性好的ＳｉＯ＿２膜。     

生长功率对HgCdTe薄膜微观结构以及表面形貌影响

实验采用射频磁控溅射生长了HgCdTe薄膜,并利用台阶仪、XRD、原子力显微镜等现代分析手段对HgCdTe薄膜的生长速率、物相、表面形貌进行了研究。实验结果表明,随着溅射功率增大,其生长速率成线性增大,当溅射功率低于30w时,薄膜XRD衍射图谱上没有出现任何特征衍射峰,只是在2θ=23°附近出现衍射波包,材料具有明显的非晶态特征,当溅射功率高于30w时,XRD表现为多晶结构;AFM和SEM分析表明生长速率对HgCdTe薄膜表面粗糙度、形貌、形成机理等有直接影响,随着生长速率提高,薄膜表面粗糙度逐渐增大,且薄膜逐渐形成“迷津”结构。     

Effect of power variation on microstructure and surface morphology of HgCdTe films deposited by RF magnetron sputtering

Mercury cadmium telluride films were grown by the RF magnetron sputtering technique at different sputtering powers.In experiment,X-ray diffraction (XRD) and atomic force microscopy (AFM) have been used to characterize the microstructure of HgCdTe films.The experimental results showed that when the growth power increased,the growth rate of HgCdTe films increased; when the growth power was less than 30 W,the HgCdTe film deposited by RF magnetron sputtering was amorphous; when the growth power was more than 30 W,the films exhibited polycrystalline structure.Films deposited at different growth rates were found to have characteristically different formations and surface morphologies; as observed through AFM,the surface morphology is composed of longitudinal islands forming a maze-like pattern in the high deposition rate.AFM analysis also illustrated that a significant reduction in the areal density of large islands and characteristically smoother films was achieved using a low deposition rate.     

HgCdTe干法刻蚀的掩模技术研究

文章报道了HgCdTe微台面列阵ICP干法刻蚀掩模技术研究的初步结果。首先采用常规光刻胶作为HgCdTe材料的ICP干法刻蚀掩模。扫描电镜结果发现，由于刻蚀的选择比低，所以掩模图形退缩严重，刻蚀端面的平整度差，台面侧壁垂直度低。因此采用磁控溅射生长的SiO2掩模进行了相同的HgCdTe干法刻蚀。结果发现，SiO2掩模具有更高的选择比和更好的刻蚀端面。但是深入的测试表明，介质掩模的生长对HgCdTe表面造成了电学损伤。最后通过优化生长条件，获得了无损伤的磁控溅射生长SiO2掩模技术。     

Formation of structures with noncatalytic CdTe nanowires

The processes of the noncatalytic synthesis of structures with CdTe nanowires by magnetron sputtering deposition are studied. It is shown that the deposition of magnetron sputtered CdTe onto substrates covered by a porous SiO₂ layer can result in CdTe nanowires formation. The porosity of SiO₂ layers with thicknesses from 2 to 15 nm fabricated by magnetron sputtering deposition is estimated.     

锑化铟红外探测器的三维电极成型技术

锑化铟的电极因三维特性易产生侧壁断裂问题,互联的铟柱会侵入电极内部,影响锑化铟芯片的可靠性。使用离子束溅射沉积、热蒸发、磁控溅射等方法制备三维电极体系,并通过聚焦离子束(Focused Ion Beam, FIB)方法以及扫描电子显微镜(Scanning Electron Microscope, SEM)对其进行表征。结果表明,通过热蒸发、磁控溅射制备的电极三维覆盖情况较好,但存在电极脱落和剥离困难的问题;离子束溅射沉积方法可通过改变沉积角度、移除修正挡板来实现锑化铟三维电极的高质量制备。     

How to reduce the Al-texture in AlN films during film preparation

The preparation of aluminum nitrogen(AlN) film without Al texture is of great significance for the manufacture of highperformance surface acoustic wave(SAW) device.We research the process factors which bring Al into AlN film due to radio frequency(RF) magnetron sputtering system,and discuss how the process parameters influence the AlN thin film containing Al.In the research,it is found that the high sputtering power,the low deposition pressures and low partial pressure of Ar can lead to growing Al-texture during AlN thin film preparation,and the experiment also shows that filling the chamber with nitrogen gas can recrystallize a small amount of Al composition into AlN film during the annealing process in the high temperature environment.     

Technique for forming ITO films with a controlled refractive index

A new method for fabricating transparent conducting coatings based on indium-tin oxide (ITO) with a controlled refractive index is proposed. This method implies the successive deposition of material by electron-beam evaporation and magnetron sputtering. Sputtered coatings with different densities (and, correspondingly, different refractive indices) can be obtained by varying the ratio of the mass fractions of material deposited by different methods. As an example, films with effective refractive indices of 1.2, 1.4, and 1.7 in the wavelength range of 440–460 nm are fabricated. Two-layer ITO coatings with controlled refractive indices of the layers are also formed by the proposed method. Thus, multilayer transparent conducting coatings with desired optical parameters can be produced.     

Preparation and characterization of transparent conducting ZnO:W films by DC magnetron sputtering

Tungsten-doped zinc oxide（ZnO:W） films with low resistivity and high transmittance were successfully deposited on glass substrates by direct current magnetron sputtering at low temperature.The deposition pressure is varied from 12 to 21 Pa.The X-ray diffraction results show that all of the deposited films are polycrystalline and have a hexagonal structure with a preferred c-axis orientation.The crystallinity,morphologies and resistivity of ZnO:W films greatly depend on deposition pressure while the optical properties including optical transmittance, optical band gap as well as refractive index are not sensitive to deposition pressure.The deposited films with an electrical resistivity as low as 1.5×10^-4Ω·cm,sheet resistance of 6.8Ω/□and an average transmittance of 91.3% in the visible range were obtained at a deposition pressure of 21 Pa and sputtering power of 130 W.