热壁 LPCVD 氮化硅薄膜的制备及其应用

论述了热壁低压化学汽相淀积（ＬＰＣＶＤ）制备氮化硅薄膜的工艺过程。对氮化硅薄膜进行测试分析，用它作介质膜、钝化膜，并作出了多种性能良好的光电器件。     

热壁LPCVD多晶硅薄膜的制备及其应用

论述了热壁低压化学汽相渡积（ＬＰＣＶＤ）制备多晶硅薄膜的淀积变量，是影响膜层质量的因素。其次简述了热壁ＬＰＣＶＤ薄膜在硅ＣＣＤ多路传输器和硅ＣＣＤ多路开关组件等红外信号处理器件研制中的应用。     

化学汽相淀积（CVD）设备的使用与维修

化学汽相淀积（ＣＶＤ）设备的使用与维修王焕杰，张克云，陈振昌（复旦大学．上海．２００４３３）自８０年代初开始，化学汽相淀积（简称ＣＶＤ）工艺及其专用设备，在我国半导体器件制造工业中逐渐推广使用。多种ＣＶＤ设备，包括ＬＰＣＶＤ氨化硅／多晶硅，ＬＰＣＶＤ...     

用SiH_4-N_2进行PECVD生长高质量SiN研究

用ＳｉＨ４┐Ｎ２进行ＰＥＣＶＤ生长高质量ＳｉＮ研究刘英坤李明月（电子工业部第十三研究所，石家庄，０５００５１）１引言众所周知，氮化硅薄膜，尤其是低温等离子体淀积的氮化硅薄膜ＰＥＣＶＤ—ＳｉｘＮｙ，因其良好的物理化学性质和优越的制备工艺，在现代半导体器...     

一种新型氮化硅氢离子敏器件及其特性

新型氮化硅氢离子敏器件采用ＰＥＣＶＤ法淀积ＳｉＮｘＨｙ膜同时作敏感膜与二次钝化保护膜。改善了器件的密封性能；敏感灵敏度β＝５６￣６０ｍＶ／ｐＨ，比用ＬＰＣＶＤ法淀积的Ｓｉ３Ｎ４膜提高１４％，β的线性度有明显改善；响应时间也缩短一倍。     

低应力PECVD氮化硅薄膜工艺探讨

介绍了一种掺氦的等离子增强化学气相淀积（ＰＥＣＶＤ）氮化硅薄膜工艺技术,可调控氮化硅薄膜的应力,从而在较低的射频功率下生长低应力的氮化硅薄膜。文中对其机理作了初步的探讨。所生长的氮化硅薄膜的折射率和腐蚀速率没有明显变化,对器件,尤其是对砷化镓异质结器件几乎没有应力损伤。     

多晶硅薄膜应力特性研究

本文报道了低压化学气相淀积（ＬＰＣＶＤ）制备的多晶硅薄膜内应力与制备条件、退火温度和时间及掺杂浓度关系的实验研究结果,用ＸＲＤ、ＲＥＤ等技术测量分析了多晶硅膜的微结构组成．结果表明,ＬＰＣＶＤ制备的多晶硅薄膜具有本征压应力,其内应力受淀积条件、微结构组成等因素的影响．采用快速退火（ＲＴＡ）可以使其压应力松弛,减小其内应力,并可使其转变成为本征张应力,以满足在微机电系统（ＭＥＭＳ）制备中的要求     

热壁低压化学汽相淀积多晶硅膜的氧沾污分析

主要介绍热壁低压化学汽相淀积（ＬＰＣＶＤ）多晶硅薄膜时，系统、温度和氧沾污对膜层质量的影响。     

超大规模集成电路的CVD薄膜淀积技术

介绍了在超大规模集成电路制造工艺中,用化学气相（ＣＶＤ）方法淀积各种薄膜的反应机理和特性,及这些薄膜在器件制造工艺中的应用。     

PECVD法制备纳米硅薄膜材料

采用等离子增强化学汽相淀积（ＰＥＣＶＤ） 法制备了纳米硅薄膜材料， 研究了工艺参数， 如衬底温度、衬底直流偏压、反应气体流量比等对薄膜性能的影响。采用椭圆偏振光谱和有效介质近似法分析了薄膜结构     

激光热处理对化学沉积Ni-P合金薄膜性能的影响

用扫描电镜(SEM)观察了化学沉积Ni-P合金薄膜/单晶硅基体的结构与颗粒度,利用X射线衍射(XRD)技术测试了其化学沉积后的残余应力,测量了激光热处理后残余应力的变化规律,分析了残余应力对磨损性能及界面结合强度的影响。实验结果表明,化学沉积Ni-P合金薄膜/硅基体的残余应力均表现为拉应力,经过激光热处理后残余应力发生了变化,由高值的拉应力变为低值的拉应力或压应力;薄膜残余应力对其磨损性能有明显的影响,其磨损量随着残余应力的减小而减小;薄膜与基体结合强度随着残余应力的增大而减小,合理地选择激光热处理参数可以精确地控制薄膜残余应力,提高其结合强度。     

调Q脉冲YAG三波长激光诱导液相沉积Si基Ni-Pd-P纳米膜

使用脉冲三波长Nd：YAG激光实现了室温下半导体硅上化学沉积Ni-Pd-P纳米膜。SEM结果表明,激光诱导化学沉积Ni-Pd－P纳米膜具有良好的选择性。经STM测试发现,由于激光作用,镀层不仅沿表面生长,而且在厚度方向上也不断增厚。极化曲线测试表明,短时间激光诱导沉积的Ni-Pd-P纳米膜具有优异的析氢催化性能。     

激光等离子体化学气相沉积掺氢非晶硅薄膜——一种新的LCVD方法

采用一种新方法,用脉冲CO_2激光器获得了掺氢非晶硅薄膜。描述了我们的实验。给出了生长速率与有关实验参数的关系和合适的工作条件;测量和分析了这种薄膜的某些性质。     

脉冲激光沉积Al膜的沉积模式及沉积速率研究

为了给脉冲激光沉积(PLD)法沉积大面积均匀薄膜的应用提供相关的理论依据,以纯铝块作为靶材,采用PLD法在同轴和旁轴两种模式下对比研究了Al薄膜的厚度均匀性。同时,在旁轴的沉积模式下分别研究了基片温度、激光功率和重复频率对A l薄膜沉积速率的影响规律。实验结果表明,采用PLD方法在旁轴的沉积模式下获得的Al薄膜的厚度更加均匀。随着基片温度的增加,薄膜的沉积速率反而降低。升高激光功率,薄膜的沉积速率也随之提高。而在激光重复频率的变化过程中,Al薄膜的沉积速率有一最大值。     

OLD诊断SiH_4的LPCVD动力学过程

用光声激光偏转(OLD)测量了强TEA CO_2脉冲激光辐照SiH_4-H_2系统产生等离子体淀积(LPCVD)硅薄膜过程中的激波效应,证明激光击穿SiH_4诱发的激波效应是LPCVD中基本的气体动力学过程,并讨论了激波对膜生长的影响。     

CO2激光化学气相沉积a-Si:H薄膜

用输出功率为50W的CW CO2激光照射纯硅烷(SiH4)气体得到了a-Si:H薄膜。沉积速率达到200/min。用电子衍射方法测定了所沉积的薄膜是非晶态的。测量了薄膜的光电导率和暗电导率,其比值达104量级。用紫外可见光谱分析了薄膜的光学性质,计算出光能隙为1.44～2.0eV。得到了沉积速率、光电导率、暗电导率、光学能隙随基片温度变化的关系曲线。阐述了CO2激光化学气相沉积a-Si:H薄膜的机理。     

岛状银膜上吡啶表面增强喇曼散射(SERS)

本文的工作是对吡啶吸附于由化学淀积法在岛状光刻胶基片上制得的规则粗糙银膜表面上产生的表面增强喇曼散射效应的研究。我们考察了银膜上岛密度对增强效应的影响,分析了不同光照时间下获得的吡啶表面增强喇曼光谱的1010cm~(-1)、1036cm~(-1)相对峰强变化、连续背景变化和两峰的相对频移。结果表明,岛状结构的银膜有利于产生增强效应;吡啶分子在光照的最初20分钟内在银表面上的吸附形式发生着变化。     

Two-step fabrication of thin film encapsulation using laser assisted chemical vapor deposition and laser assisted plasma enhanced chemical vapor deposition for long-lifetime organic light emitting diodes

A thin film encapsulation layer was fabricated through two-sequential chemical vapor deposition processes for organic light emitting diodes (OLEDs). The fabrication process consists of laser assisted chemical vapor deposition (LACVD) for the first silicon nitride layer and laser assisted plasma enhanced chemical vapor deposition (LAPECVD) for the second silicon nitride layer. While SiN_x thin films fabricated by LAPECVD exhibits remarkable encapsulation characteristics, OLEDs underneath the encapsulation layer risk being damaged during the plasma generation process. In order to prevent damage from the plasma, LACVD was completed prior to the LAPECVD as a buffer layer so that the laser during LACVD did not damage the devices because there was no direct irradiation to the surface. This two-step thin film encapsulation was performed sequentially in one chamber, which reduced the process steps and increased fabrication time. The encapsulation was demonstrated on green phosphorescent OLEDs with I–V-L measurements and a lifetime test. The two-step encapsulation process alleviated the damage on the devices by 19.5% in external quantum efficiency compared to the single layer fabricated by plasma enhanced chemical vapor deposition. The lifetime was increased 3.59 times compared to the device without encapsulation. The composition of the SiNx thin films was analyzed through Fourier-transform infrared spectroscopy (FTIR). While the atomic bond in the layer fabricated by LACVD was too weak to be used in encapsulation, the layer fabricated by the two-step encapsulation did not reveal a Si–O bonding peak but did show a Si–N peak with strong atomic bonding.     

高斯波束与光纤间的微透镜耦合分析

本文讨论了半导体激光器与带有微透镜的光纤之间的耦合的理论计算.适当增减反射膜,本文讨论的理想非对称微透镜可以收集激光器辐射功率的大部分.如果激光器的波束是圆对称的,则相应设计的理想对称微透镜理论上可以收集100%的激光辐射能量.理想非对称微透镜的关键特征是,在任一个沿轴向的纵截面上,它都有一个双曲线形状.微透镜直接与光纤相联.     

High-coupling tapered hyperbolic fiber microlens and taper asymmetry effect

This paper proposes a new scheme of a tapered hyperbolic-end fiber (THEF) microlens for efficient coupling between laser diode and single-mode fiber. The THEFs were fabricated by symmetrically tapering the fiber during the etching process and hyperbolically lensing the tip during the fusing process. The hyperbolic microlenses of the THEFs have demonstrated up to 82% coupling efficiency for a laser with an aspect ratio of 1:1.5. The influence of tapering asymmetry on the coupling has also been investigated experimentally and theoretically. The axially symmetrical tapered microlenses of the THEFs showed far-field profiles well approximated by a Gaussian profile, while the asymmetric taper deviated significantly from a Gaussian profile. The coupling efficiency for both symmetrical and asymmetrical microlenses were calculated based on the Fresnel diffraction theory and the results were in good agreement with the measurements. This study makes it possible to fabricate the hyperbolic microlenses using unique etching and fusion techniques that result in a more than 2 dB improvement in coupling efficiency when compared to the currently available hemispherical microlenses.