基于电流变液的宽带可调超材料吸波体设计

为将超材料吸波体更好地应用于生产生活中,文中设计了一种基于电流变液的宽带可调超材料吸波体。通过在超材料吸波体中加载电阻器和介电常数电可调的电流变液实现宽带吸收和吸收频带可调。仿真结果表明,吸波体在8.296~15.128 GHz之间的吸收率超过了80%,在11.5~15 GHz之间的吸收率超过了90%,实现了电磁波的宽带吸收。随着电流变液外加电场强度的增加,其吸收频带逐渐往低频发生移动,实现了吸收频带的调控。此外,仿真证实,由于吸波体结构单元具有旋转对称性,其吸收特性具有极化无关性。     

基于石墨烯超材料的宽频带可调太赫兹吸波体

基于二维材料石墨烯,设计了一款宽频带可调谐超材料太赫兹吸波体。该吸波体由三层结构组成,顶层为石墨烯超材料,中间层为二氧化硅,底层为金属薄膜。仿真结果表明,当石墨烯的费米能级为0.7 eV时,该吸波体在1.11~2.61 THz频率范围内吸收率超过90%,相对吸收带宽为80.6%。当石墨烯的费米能级从0 eV增大到0.7 eV时,该吸波体器件的峰值吸收率可以从20.32%增大到98.56%。此外,该吸波体器件还具有极化不敏感和广角吸收的特性。因此,它在太赫兹波段的热成像、热探测、隐身技术等领域具有潜在的应用价值。     

基于狄拉克半金属和二氧化钒的三频带双调谐吸波体

提出了基于狄拉克半金属(BDS)和二氧化钒(VO₂)的三频带(triple-band)双调谐吸波体,通过时域有限差分法和等效电路模型(ECM)分析了吸波体的电磁特性。研究表明：当VO₂呈现出纯金属态时,吸波体会出现三个明显的吸收峰,平均吸收率为98.64%。同时,通过改变BDS费米能量和VO₂电导率可以动态调谐吸波体吸收峰处的谐振频率和吸收率。最后,分别讨论了吸波体吸波特性随BDS层、VO₂层和中间介质层厚度的变化规律。这为多带双调谐滤波器、吸波体的设计提供了理论依据。     

基于金属多环的多频段超材料吸波器

本文设计了一种微波频段多频段超材料吸收器,该吸波器可工作在电磁波平行入射状态,可用于传输电路电磁波的吸收。利用cst软件仿真,模拟了图形层结构单元包含不同数目金属环时该超材料的吸收谱。结果表明,图形层的金属环数目越多,吸收谱上吸收峰数目越多。进一步研究表明每层金属环的引入,都会增加电感和电容,进而增加谐振频率,使谐振峰增加。以上结果表明,该吸波器结构在频谱分析和多谱成像等领域表现出较大潜能。     

一种基于二氧化钒材料的可调谐吸波器设计

为了在THz波段获得TE波下的可调谐吸收频谱, 采用全波仿真的方法, 设计了一款基于二氧化钒材料的可调谐THz吸波器, 对该吸波器的吸收频谱、电场图、表面电流图以及能量损耗图进行分析, 并讨论了结构参量h₄, k以及入射角度θ对吸收频域和吸收带宽的影响。结果表明, 通过外部温控的方式改变二氧化钒谐振单元的物理特性可以获得可调谐的吸收频谱并改善吸波器的吸收性能, 该吸波器在温度T≥68℃时, 可以实现在2.70THz~3.36THz频段的宽带吸收(吸收率在90%以上), 相对带宽达到21.8%;在T＜68℃时, 可以实现多个单频点的吸收; 改变结构参量h₄, k可以改变吸收频点的位置以及吸收带宽, 改变入射角度θ可以影响吸波器的吸收效果。该研究对可调谐太赫兹器件的进一步探究是有帮助的。     

一种新型可调谐宽带吸波器的设计

设计了一种新型可调谐且极化不敏感的宽带吸波器。采用了全波仿真方法对该吸波器的吸收率、电场图和表面电流图进行了计算, 并探讨了结构参数z、y 和入射角度啄对吸波器电磁波吸收特性的影响。研究结果表明, 该吸波器在12.17 ~14.19 GHz 频域的吸收率达到90% 以上, 通过激励不同的等离子体谐振区域不但可以改善其吸收特性, 实现吸波器的宽带吸收, 而且还能获得可调谐的吸收频谱。改变结构参数z 和y 可以在拓展吸收带宽的同时使吸收频域发生移动; 且该吸波器具有较好的角度稳定性。     

结构型多尺度超材料吸波体的设计与研究

文中提出了一种结构型多尺度超材料吸波体。微观层面,该吸波体的结构单元采用微米级羰基铁粉 (CIPs)和多壁碳纳米管(MWCNTs),二者可有效提升吸波体的介电损耗及磁损耗特性;宏观层面,吸波体结构单元 顶部为平台型结构,可提升吸波体对电磁波的阻抗匹配特性。仿真结果表明,该超材料吸波体的反射损耗最小值为 -18. 15 dB,吸收率峰值可达0. 98,吸收率超过0. 9 的频带宽度为5. 5 GHz。通过CIPs、MWCNTs 以及吸波体宏观结 构的协同作用,该吸波体可实现高效宽带吸收特性。     

双频段太赫兹超材料吸波体的设计及传感特性研究

提出了一种基于不同半径金属圆环加载于介质层的新型太赫兹超材料吸波体,实现了双频段的完美吸收和偏振不敏感性,且具备宽角度入射时可达到良好吸收的性能。仿真结果表明,该吸波体在f1 = 2.335 THz 和f2 = 4.215 THz 均可实现完美吸收,吸收率高达99. 99%;当入射角度达到70°时吸收率仍能保持80%以上。进一步分析可知,两个吸收峰分别由半径不同的金属圆环谐振产生,故而吸收峰的谐振频率可以通过调节圆环的半径进行单独调制。此外,还研究了该吸波体在介电传感和厚度传感两方面的应用。结果表明该吸波体对介电常数小于10的物质具有较好的传感性能,且吸收峰f2 的灵敏度较高;而应用于厚度传感时,吸收峰f1 的稳定性更适宜。研究结论对于设计新型超材料吸波体及其在传感中的应用具有重要意义。     

十字架型超材料吸波特性及机理研究

设计了一种十字架型电磁超材料吸波体,采用CST studio suite 2009 频域求解器提取S 参数进行仿真研究,并计算了其吸波率,在24.65 THz 和35.25 THz 得到两个吸收峰,吸收率分别为0.83 和0.997。改变材料结构尺寸,在7.3 THz 达到完美吸收,吸收率接近于1。将THz 波段的超材料吸波体结构尺寸放大1000 倍,在GHz 波段同样可以达到完美吸收,说明超材料吸波体可通过对结构尺寸调节改变吸收波段。另外研究了这种吸波体的吸收机理,发现吸收主要在第一层的十字架金属单元层,可用于Bolometer 探测器的设计。     

一种带宽展宽的等离子体超材料吸波体的设计

为了在TE波下获得带宽可展宽（11GHz~14GHz频带内）且可调谐的吸收曲线，提出了一种新型超材料吸波体，其周期性结构单元采用蜂窝状特有的六边形结构。对该吸波体的参量分析图进行了计算，研究了变量g和d的数值不同时，对吸波体吸收频带及吸收带宽的影响，并解释了蚀刻"十"字形结构吸波体带宽展宽的成因。结果表明，该吸波体在9.17GHz~9.5GHz低频频域的吸收率达到90%以上，当不同的等离子体谐振区域被激励时，可以实现吸波体的分时分频域吸收以及改善吸波体的吸收性能，改变变量g和d可以实现对吸收频带的动态调控；可以通过在方形结构中蚀刻"十"字形结构的方式拓宽高频频域的吸收带宽，其在12.08GHz~13.91GHz频域的吸收率高于90%，改变变量s可以明显展宽吸收频带，且该吸波体对入射电磁波的角度不敏感。该吸波体的设计思路为拓宽吸波体的吸收带宽提供了一种有效的方法。     

Resolution Enhancement Technology:Integrated Process Solutions using OPC

DUV lithography, using the 248 nm wavelength, is a viable manufacturing option for devices with features at 130 nm and less. Given the low kl value of the lithography, integrated process development is a necessary method for achieving acceptable process latitude. The application of assist features for rule based OPC requires the simultaneous optimization of the mask, illumination optics and the resist.Described in this paper are the details involved in optimizing each of these aspects for line and space imaging.A reference pitch is first chosen to determine how the optics will be set. The ideal sigma setting is determined by a simple geometrically derived expression. The inner and outer machine settings are determined, in turn,with the simulation of a figure of merit. The maximum value of the response surface of this FOM occurs at the optimal sigma settings. Experimental confirmation of this is shown in the paper.Assist features are used to modify the aerial image of the more isolated images on the mask. The effect that the diffraction of the scattering bars (SBs) has on the image intensity distribution is explained. Rules for determining the size and placement of SBs are also given.Resist is optimized for use with off-axis illumination and assist features. A general explanation of the material' s effect is discussed along with the affect on the through-pitch bias. The paper culminates with the showing of the lithographic results from the fully optimized system.     

Cost-effective test solutions for smart card and other integrated flash applications

From its emergence in the late 1980s as a lower cost alternative to early EEPROM technologies, flash memory has evolved to higher densities and speedsand rapidly growing acceptance in mobile applications.In the process, flash memory devices have placed increased test requirements on manufacturers. Today, as flash device test grows in importance in China, manufacturers face growing pressure for reduced cost-oftest, increased throughput and greater return on investment for test equipment. At the same time, the move to integrated flash packages for contactless smart card applications adds a significant further challenge to manufacturers seeking rapid, low-cost test.     

An improved parallel thinning algorithm with two subiterations

The parallel thinning algorithm with two subiterations is improved in this paper. By analyzing the notions of connected components and passes, a conclusion is drawn that the number of passes and the number of eight-connected components are equal. Then the expression of the number of eight-connected components is obtained which replaces the old one in the algorithm. And a reserving condition is proposed by experiments, which alleviates the excess deletion where a diagonal line and a beeline intersect. The experimental results demonstrate that the thinned curve is almost located in the middle of the original curve connectivelv with single pixel width and the processing speed is high.     

Theoretical analysis of the relationship between the Brillouin gain coefficient and the strain in the optical-fiber sensors

The relation between the power of the Brillouin signal and the strain is one of the bases of the distributed fiber sensors of temperature and strain. The coefficient of the Bfillouin gain can be changed by the temperature and the strain that will affect the power of the Brillouin scattering. The relation between the change of the Brillouin gain coefficient and the strain is thought to be linear by many researchers. However, it is not always linear based on the theoretical analysis and numerical simulation. Therefore, errors will be caused if the relation between the change of the Brillouin gain coefficient and the strain is regarded as to be linear approximately for measuring the temperature and the strain. For this reason, the influence of the parameters on the Brillouin gain coefficient is proposed through theoretical analysis and numerical simulation.     

Novel fiber-optical interferometer with miniaturized probe for in-hole measurements

Today, micro-system technology and the development of new MEMS （Micro-Electro-Mechanical Systems） are emerging rapidly. In order for this development to become a success in the long run, measurement systems have to ensure product quality. Most often, MEMS have to be tested by means of functionality or destructive tests. One reason for this is that there are no suitable systems or sensing probes available which can be used for the measurement of quasi inaccessible features like small holes or cavities. We present a measurement system that could be used for these kinds of measurements. The system combines a fiber optical, miniaturized sensing probe with low-coherence interferometry, so that absolute distance measurements with nanometer accuracy are possible.     

Study of waveguide coupling efficiency in hybrid silicon lasers

This paper presents a new method to increase the waveguide coupling efficiency in hybrid silicon lasers. We find that the propagation constant of the InGaAsP emitting layer can be equal to that of the Si resonant layer through improving the design size of the InP waveguide. The coupling power achieves 42% of the total power in the hybrid lasers when the thickness of the bonding layer is 100 nm. Our result is very close to 50% of the total power reported by Intel when the thickness of the thin bonding layer is less than 5 nm. Therefore, our invariable coupling power technique is simpler than Intel＇s.     

Teleportation of an arbitrary unknown N-qubit entangled state under the controlling of M controllers

A new quantum protocol to teleport an arbitrary unknown N-qubit entangled state from a sender to a fixed receiver under M controllers(M < N) is proposed. The quantum resources required are M non-maximally entangled Greenberger-Home-Zeilinger (GHZ) state and N-M non-maximally entangled Einstein-Podolsky-Rosen (EPR) pairs. The sender performs N generalized Bell-state measurements on the 2N particles. Controllers take M single-particle measurement along x-axis, and the receiver needs to introduce one auxiliary two-level particle to extract quantum information probabilistically with the fidelity unit if controllers cooperate with it.     

A rigorous proof of MIMO channel capacity’s increase with antenna number

It is well known that adding more antennas at the transmitter or at the receiver may offer larger channel capacity in the multiple-input multiple-output（MIMO） communication systems. In this letter, a simple proof is presented for the fact that the channel capacity increases with an increase in the number of receiving antennas. The proof is based on the famous capacity formula of Foschini and Gans with matrix theory.     

Diode-end-pumped Nd:YVO4/LBO lasers with 4.2W continuous-wave output at 457 nm

A continuous-wave (CW) 457 nm blue laser operating at the power of 4.2 W is demonstrated by using a fiber coupled laser diode module pumped Nd: YVO4 and using LBO as the intra-cavity SHG crystal With the optimization of laser cavity and crystal parameters, the laser operates at a very high efficiency. When the pumping power is about 31 W, the output at 457nm reaches 4.2 W, and the optical to optical conversion efficiency is about 13.5% accordingly. The stability of the out putpower is better than 1.2% for 8 h continuously working.     

Call for Papers

正Wireless Body-area Networks The last decade has witnessed the convergence of three giant worlds:electronics,computer science and telecommunications.The next decade should follow this convergence in most of our activities with the generalization of sensor networks.In particular with the progress in medicine,people live longer and the aging of population will push the development of wireless personal networks