Measurements of the vapor-liquid coexistence curve and the critical parameters for 1,1,1,2-tetrafluoroethane

Measurements of the vapor-liquid coexistence curve in the critical region for 1,1,1,2-tetrafluoroethane (R134a; CH₂FCF₃), which is currently considered as a prospective substitute for conventional refrigerant R12, have been performed by visual observation of the disappearance of the meniscus at the vapor-liquid interface within an optical cell. Twenty-seven saturated densities along the vapor-liquid coexistence curve between 208 and 999 kg·m^–3 have been obtained in the temperature range 343 K to the critical temperature. The experimental uncertainties in temperature and density measurements have been estimated to be within ±10mK and ±0.55%, respectively. On the basis of these measurements near the critical point, the critical temperature and the critical density for 1,1,1,2-tetrafluoroethane were determined in consideration of the meniscus disappearing level as well as the intensity of the critical opalescence. In addition, the critical exponent ß along the vapor-liquid coexistence curve has been determined in accord with the difference between the density of the saturated liquid and that of the saturated vapor.Paper presented at the Tenth Symposium on Thermophysical Properties, June 20–23, 1988, Gaithersburg, Maryland, U.S.A.     

Determination of the vapor-liquid coexistence curve and the critical parameters for refrigerant 502

The vapor-liquid coexistence curve for refrigerant 502 (R 502) near the critical point has been determined by visual observation of the disappearance of the meniscus. Twenty-six saturated densities between 262 and 899 kg· m^–3 have been obtained within an experimental error in temperature and density of ± 10 mK and ± 0.5%, respectively. Using these results along the vapor-liquid coexistence curve, the critical parameters, i.e., the critical temperature T _c =355.37 ±0.01 K and the critical density _c =555±3kg · m^–3, have been determined based on the disappearance of the meniscus level as well as on the intensity of the critical opalescence. A critical pressure P _c =4.070±0.002 MPa has been calculated from the existing vapor-pressure correlation using the present T _c value. In addition, the critical exponent along the coexistence curve and the law of rectilinear diameter near the critical point are discussed.Paper presented at the Japan-United States Joint Seminar on Thermophysical Properties, October 24–26, 1983, Tokyo, Japan.     

Wind speed estimation uncertainties: effects of climatological and micrometeorological parameters

To achieve structures that are risk-consistent, structural reliability methods must be used that account for uncertainties with respect to the relevant parameters affecting the estimation of wind effects. In this paper, we obtain measures of uncertainties in the estimation of the wind speeds upwind of structures. These uncertainties are due to incomplete knowledge with respect to the relevant extreme climatological and micrometeorological parameters. Advances in wind engineering and improvements in computational capabilities now make it possible to improve upon earlier estimates available in the literature. The work presented in this paper is a phase of a broader NIST project aimed at developing user-friendly software for the estimation of probabilities of failure of low-rise structures subjected to wind loads.     

Understanding the kinetics and nanoscale morphology of electron-beam-induced deposition via a three-dimensional Monte Carlo simulation: the effects of the precursor molecule and the deposited material

The electron-beam-induced deposition of silicon oxide from tetraethyorthosilicate and tungsten from tungsten hexafluoride is simulated via a Monte Carlo simulation. Pseudo one-dimensional nanopillars are grown using comparable electron-beam parameters and a comparison of the vertical and lateral growth rate and the pillar morphology is correlated to the precursor and deposited material parameters. The primary and secondary electrons (type I) are found to dominate the vertical growth rate and the lateral growth rate is dominated by forward and secondary electrons (type II). The resolution and morphology of the nanopillars are affected by the effective electron interaction volume and the resultant surface coverage of the precursor species in the effective electron interaction region. Finally, the simulated results are compared to previously reported experimental results.     

Industrial application of RAM modeling: Development and implementation of a RAM simulation model for the Lexan plant at GE Industrial, Plastics

A RAM (reliability, availability and maintenance) model has been built for the GE Industrial, Plastics Lexan^® plant in Bergen op Zoom, The Netherlands. It was based on a Reliability Block Diagram with a Monte Carlo simulation engine. The model has been validated against actual plant data from two different sources, and against local expert opinions, resulting in a satisfactory simulation model. The model was used to assess two key decisions that were (to be) made by GE Industrial, Plastics concerning operation and shutdown policies of the plant. The model results showed that the operation and maintenance could be further improved, and that in doing so the annual production loss could be reduced further.     

Molecular simulation study of the structural properties in InxGa1−xAs alloys: Comparison between Valence Force Field and Tersoff potential models

The thermodynamic and structural properties of compound semiconductor alloys have been generally modelled using either the Valence Force Field model or the Tersoff potential model. This work compares the properties, such as lattice constant and bond length, of the In_xGa_1−xAs alloy as predicted by Monte Carlo simulations in the semigrand isothermal isobaric ensemble using both the potential models, with experimental data. The lattice constants are expected to follow the Vegard’s law at any given temperature. Valence Force Field model predicts bond length data which follows the experimentally determined values at 300 K; whereas the Tersoff model forecasts that the virtual crystal approximation will be followed. The VFF model, with its experimentally determined parameters, is found to be better for modelling the alloy at room temperature. The Tersoff model, with its fitted parameters, on the other hand predicts the effect of temperature on the microscopic structure of the alloy better. The parameters of the Tersoff potential characterizing the In–Ga interactions can be further improved to predict bond lengths more accurately.