一个10位、50MS/s CMOS折叠流水结构A/D转换器

在 0.6μmDPDM标准数字CMOS工艺条件下 ,实现 10位折叠流水结构A/D转换器 ,使用动态匹配技术 ,消除折叠预放电路的失调效应 ;提出基于单向隔离模拟开关的分步预处理 ,有效压缩了电路规模 ,降低了系统功耗 .在5V电源电压下 ,仿真结果为 :当采样频率为50MSPS时 ,功耗为 12 0mW ,输入模拟信号和二进制输出码之间延迟为2.5个时钟周期 ,芯片面积 1.44mm2 .     

一个10位、50MS/s CMOS折叠流水结构A/D转换器

在0.6μm DPDM标准数字CMOS工艺条件下,实现10位折叠流水结构A/D转换器,使用动态匹配技术,消除折叠预放电路的失调效应;提出基于单向隔离模拟开关的分步预处理,有效压缩了电路规模,降低了系统功耗.在5V电源电压下,仿真结果为:当采样频率为50MSPS时,功耗为120mW,输入模拟信号和二进制输出码之间延迟为2.5个时钟周期,芯片面积1.44mm2.     

A 10-bit 60-MS/s Low-Power CMOS Pipelined Analog-to-Digital Converter

A 10-bit 60-MS/s low-power CMOS pipelined analog-to-digital converter (ADC) is proposed. At the front-end, a timing-skew-insensitive double-sampled Miller-capacitance-based sample-and-hold circuit is employed to enhance the dynamic performance of the pipelined ADC. Bootstrapped switch achieves rail-to-rail signal swing at low-voltage power supply. Employing double sampling and bias current scaling techniques, very competitive power consumption can be achieved. The prototype chips have been fabricated and experimental results confirm the feasibility of this new technique.     

A 10-bit 50-MS/s Pipelined ADC With Opamp Current Reuse

Power and area saving concepts such as operational amplifier (opamp) bias current reuse and capacitive level shifting are used to lower the analog power of a 10-bit pipelined analog-to-digital converter (ADC) to 220 muW/MHz. Since a dual-input bias current reusing opamp performs as two opamps, the opamp summing nodes can be reset in every clock cycle. By using only N-channel MOS (NMOS) input stages, the capacitive level shifter simplifies the gain-boosting amplifier design and enables fast opamp settling with low power-consumption. The prototype achieves 9.2/8.8 effective number of bits (ENOB) for 1- and 20-MHz inputs at 50 MS/s. The ADC works within the temperature range of 0deg to 85 degC and the supply voltage from 1.62 to 1.96 V with little measured loss in the ENOB. The chip consumes 18 mW (11 mW for the analog portion of the ADC and 7 mW for the rest including buffers) at 1.8 V, and the active area occupies 1.1 times 1.3 mm² using a 0.18-mum complementary metal oxide semiconductor (CMOS) process     

A 14-bit 20-MS/s Pipelined ADC With Digital Distortion Calibration

A new digital distortion calibration technique is demonstrated in a 14-bit 20-MS/s pipelined analog-to-digital converter (ADC). Calibration parameters are obtained in a way similar to conventional digital gain calibration. The prototype ADC has been fabricated in a 0.18-mum CMOS process and consumes 33.7 mW at 2.8 V. Using the proposed calibration method, a 15-dB improvement of the third-order harmonic rejection is achieved. The measured SNDR and SFDR are 71.6 and 82.3 dB, respectively     

一种12位50MS/s CMOS流水线A/D转换器

采用TSMC 0.18μm 1P6M工艺设计了一个12位50 MS/s流水线A/D转换器（ADC）。为了减小失真和降低功耗,该ADC利用余量增益放大电路（MDAC）内建的采样保持功能,去掉了传统的前端采样保持电路;采用时间常数匹配技术,保证输入高频信号时,ADC依然能有较好的线性度;利用数字校正电路降低了ADC对比较器失调的敏感性。使用Cadence Spectre对电路进行仿真。结果表明,输入耐奎斯特频率的信号时,电路SNDR达到72.19 dB,SFDR达到88.23 dB。当输入频率为50 MHz的信号时,SFDR依然有80.51 dB。使用1.8 V电源电压供电,在50 MHz采样率下,ADC功耗为128 mW。     

A 15-bit Linear 20-MS/s Pipelined ADC Digitally Calibrated With Signal-Dependent Dithering

Pseudo-random dithers have been used to measure capacitor mismatch and opamp gain errors of the pipelined analog-to-digital converter (ADC) in background and to calibrate them digitally. However, this error measurement suffers from signal range reduction and long signal decorrelation time. A signal-dependent dithering scheme allows the injection of a large dither without sacrificing the signal range and shortens the signal decorrelation time. A 1.5-bit multiplying digital-to-analog converter (MDAC) stage is modified for signal-dependent dithering with two additional comparators, and its capacitor mismatch and gain errors are measured and calibrated as one error. When sampled at 20 MS/s, a 15-bit prototype ADC achieves a spurious-free dynamic range of 98 dB with 14.5-MHz input and a peak signal-to-noise plus distortion ratio of 73 dB with 1-MHz input. Integral nonlinearity is improved from 25 to 1.3 least significant bits (LSBs) after calibrating the first six stages. The chip is fabricated in 0.18-mu CMOS process, occupies an active area of 2.3 x 1.7 mm² , and consumes 285 mW at 1.8 V.     

一个用于12位40-MS/s低功耗流水线ADC的MDAC电路设计

文中设计了一个用于12位40MHz采样率低功耗流水线ADC的MDAC电路.通过对运放的分时复用,使得一个电路模块实现了两级MDAC功能,达到降低整个ADC功耗的目的.通过对MDAC结构的改进,使得该模块可以达到12bit精度的要求.通过优化辅助运放的带宽,使得高增益运放能够快速稳定.本设计在TSMC0.35μmmixsignal3.3V工艺下实现,在40MHz采样频率下,以奈奎斯特采样频率满幅(Vpp=2V)信号输入,其SINAD为73dB,ENOB为11.90bit,SFDR为89dB.整个电路消耗的动态功耗为9mW.     

12位400MS/s电流舵数模转换器

本文展示了一个12位400MS/s CMOS工艺的数模转换器。这款数模转换器采用6 2 4的分段结构和优化的开关方案来提升动态和静态性能。在400MS/s采样频率和10MHz输入信号频率的条件下,测试得到的无杂散动态范围达到77.18 dB。电路采用1.8V单电压供电,最大输出电流35mA。芯片采用标准1P-6M 0.18μm CMOS工艺制造,核心面积为0.6 mm2。     

A 1-V 100-MS/s 8-bit CMOS Switched-Opamp Pipelined ADC Using Loading-Free Architecture

A 1-V, 8-bit pipelined ADC is realized using multi-phase switched-opamp (SO) technique. A novel loading-free architecture is proposed to reduce the capacitive loading and to improve the speed in low-voltage SO circuits. Employing the proposed loading-free pipelined ADC architecture together with double-sampling technique and a fast-wake-up dual-input-dual-output switchable opamp, the ADC achieves 100-MS/s conversion rate, which to our knowledge is the fastest ADC ever reported at 1-V supply using SO technique, with performance comparable to that of many high-voltage switched-capacitor (SC) ADCs. Implemented in a 0.18-mum CMOS process, the ADC obtains a peak SNR of 45.2 dB, SNDR of 41.5 dB, and SFDR of 52.6 dB. Measured DNL and INL are 0.5 LSB and 1.1 LSB, respectively. The chip dissipates only 30 mW from a 1-V supply     

A 14b 100-MS/s Time-Interleaved A/D Converter

This article presents a 14-bit, 100-MS/s time-interleaved pipeline ADC, which samples input signal from 210-MHz IF-band. Digital self-calibration is employed to compensate gain mismatch and offset between time-interleaved channels as well as mismatches arise from a single ADC channel. A timing skew-insensitive parallel S/H circuit is utilized in order to avoid timing skew between parallel ADC channels. The ADC, fabricated in a 0.35-μm BiCMOS (SiGe) takes an area of 10.2 mm², reaches an ENOB of 11.4 bits with a 79.9-dB SFDR at 192.5-MHz input and draws 1.4 W from a 3.0-V supply.     

An 8-bit 20-MS/s ZCBC Time-Domain Analog-to-Digital Data Converter

An 8-bit 20-MS/s time-domain analog-to-digital data converter (ADC) using the zero-crossing-based circuit technique is presented. Compared with the conventional ADCs, signal processing is executed in both the voltage and time domains. Since no high-gain operational amplifier is needed, this time-domain ADC works well in a low supply voltage. The proposed ADC has been fabricated in a 0.18-mum CMOS process. Its power dissipation is 4.64 mW from a supply voltage of 1.8 V. This active area occupies 1.2 times 0.7 mm². The measured signal-to-noise-distortion ratio achieves 44.2 dB at an input frequency of 10 MHz. The integral nonlinearity is less than plusmn1.07 LSB, and the differential nonlinearity is less than plusmn0.72 LSB. This time-domain ADC achieves the effective bits of 7.1 for a Nyquist input frequency at 20 MS/s.     

一种10位100-MS/s CMOS流水折叠式A/D转换器

采用流水折叠结构设计了一种10位100-MSample/s A/D转换器。失调取消技术和电阻平均插值网络提高了转换器的线性度。级联结构放宽了折叠放大器的带宽要求,采用分布式级间跟踪保持放大器实现流水线技术来获得更高的转换精度。基于SMIC 0.18 μm CMOS工艺的测试结果如下：INL和DNL的峰值分别为0.48 LSB and 0.33 LSB。输入电压范围VP-P为1.0 V,芯片面积2.29 mm2。100 MHz采样,20 MHz输入信号下,ENOB为9.59位,SNDR为59.5 dB,SFDR为82.49 dB。1.8V电源电压下功耗仅为95 mW。     

A 10-bit 200-MS/s CMOS parallel pipeline A/D converter

This paper describes a 10-bit 200-MS/s CMOS parallel pipeline analog-to-digital (A/D) converter that can sample input frequencies above 200 MHz. The converter utilizes a front-end sample-and-hold (S/H) circuit and four parallel interleaved pipeline component A/D converters followed by a digital offset compensation. By optimizing for power in the architectural level, incorporating extensively parallelism and double-sampling both in the S/H circuit and the component ADCs, a power dissipation of only 280 mW from a 3.0-V supply is achieved. Implemented in a 0.5-μm CMOS process, the circuit occupies an area of 7.4 mm². The converter achieves a differential nonlinearity and integral nonlinearity of ±0.8 LSB and ±0.9 LSB, respectively, while the peak spurious-free-dynamic-range is 55 dB and the total harmonic distortion better than 46 dB at a sampling rate of 200 MS/s     

A 10-bit 100-MS/s CMOS pipelined folding A/D converter

This paper presents a 10-bit 100-MSample/s analog-to-digital（A/D） converter with pipelined folding architecture.The linearity is improved by using an offset cancellation technique and a resistive averaging interpolation network.Cascading alleviates the wide bandwidth requirement of the folding amplifier and distributed interstage track/hold amplifiers are used to realize the pipeline technique for obtaining high resolution.In SMIC 0.18μm CMOS,the A/D converter is measured as follows:the peak integral nonlinearity and differential nonlinearity are±0.48 LSB and±0.33 LSB,respectively.Input range is 1.0 V_P-P with a 2.29 mm² active area.At 20 MHz input @ 100 MHz sample clock,9.59 effective number of bits,59.5 dB of the signal-to-noise-and-distortion ratio and 82.49 dB of the spurious-free dynamic range are achieved.The dissipation power is only 95 mW with a 1.8 V power supply.     

10 bit 20 MS/s流水线模数转换器设计

设计了一个20MHz采样率,10bit精度流水线模数转换器。采用新颖的栅压自举开关,使电路在输入信号频率很高时仍具有良好的动态性能;用MATLAB仿真增益增强型运算放大器在不同反馈因子下闭环零、极点特性,提出了使大信号建立时间最短的主运放、辅助运放单位增益带宽和相位裕度范围。采用SMIC0.35μm2P4M工艺流片验证,20MHz采样率,2.1MHz输入信号下,SFDR=73dBc,ENOB=9.18bit。     

PIPELINED多值A/D转换器

通过对多值ADC数学表示的分析,指出了多值ADC具有更高的信息密度。本文结合数字电路的开关信号理论,设计了Pipelined三值ADC。该ADC在保证较高转换速度的同时具有相对简单的电路结构。     

A 1.8-V 22-mW 10-bit 30-MS/s Pipelined CMOS ADC for Low-Power Subsampling Applications

This paper describes a 10-bit 30-MS/s subsampling pipelined analog-to-digital converter (ADC) that is implemented in a 0.18 mum CMOS process. The ADC adopts a power efficient amplifier sharing architecture in which additional switches are introduced to reduce the crosstalk between the two opamp-sharing successive stages. A new configuration is used in the first stage of the ADC to avoid using a dedicated sample-and-hold amplifier (SHA) circuit at the input and to avoid the matching requirement between the first multiplying digital-to-analog converter (MDAC) and flash input signal paths. A symmetrical gate-bootstrapping switch is used as the bottom-sampling switch in the first stage to enhance the sampling linearity. The measured differential and integral nonlinearities of the prototype are less than 0.57 least significant bit (LSB) and 0.8 LSB, respectively, at full sampling rate. The ADC exhibits higher than 9.1 effective number of bits (ENOB) for input frequencies up to 30 MHz, which is the twofold Nyquist rate (fs/2), at 30 MS/s. The ADC consumes 21.6 mW from a 1.8-V power supply and occupies 0.7 mm², which also includes the bandgap and buffer amplifiers. The figure-of-merit (FOM) of this ADC is 0.26 pJ/step.     

A 10-bit 100 MSamples/s BiCMOS D/A Converter

This paper presents a 10-bit Digital-to-Analogue Converter (DAC) based on the current steering principle. The DAC is processed in a 0.8µm BiCMOS process and is designed to operate at a sampling rate of 100MSamples/s. The DAC is intended for applications using direct digital synthesis, and focus has been set on reducing dynamic nonlinearities to achieve a high spurious free dynamic range (SFDR) at high generated frequencies. The main part of the DAC consists of a matrix of current cells. Each current cell contains an emitter-coupled logic (ECL) flip-flop, clocked by a global ECL clock to ensure accurate clocking. A bipolar differential pair, with a cascode CMOS current sink, steered by the differential output of the ECL flip-flop, is used in each current cell to steer the current. The DAC operates at 5V, and has a power consumption of approximately 650mW. The area of the chip-core is 2.2mm × 2.2mm. The measured integral nonlinearity (INL) and differential nonlinearity (DNL) are both approximately 2 LSB. At a generated frequency of f _g0.1 f _s(f _s = 100MSamples/s) the measured SFDR is 50dB, and at f _g0.3 f _s the measured SFDR is as high as 43dB. The DAC is operating up to a sampling frequency of approximately 140MSamples/s. The DAC uses the hierarchical switching scheme and therefore the dynamic performance is not described well using the conventional glitch energy. A new energy measure that replaces the conventional glitch energy is therefore proposed. This energy measure is especially useful during the design phase.     

14位20 MS/s CMOS流水线A/D转换器

介绍了一种14位20 MS/s CMOS流水线结构A/D转换器的设计.采用以内建晶体管失配设置阈值电压的差分动态比较器,省去了1.5位流水线结构所需的±0.25 VR两个参考电平;采用折叠增益自举运算放大器,获得了98 dB的增益和900 MHz的单位增益带宽,基本消除了运放有限增益误差的影响;采用冗余编码和数字校正技术,降低了对比较器失调的敏感性,避免了余差电压超限引起的误差.电路采用0.18 μm CMOS工艺,3.3 V电源电压.仿真中,对频率1 MHz、峰值1 V的正弦输入信号的转换结果为:SNDR 85.6 dB,ENOB 13.92位,SFDR 96.3 dB.